JPH06502962A - Die fixing structure - Google Patents

Die fixing structure

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Publication number
JPH06502962A
JPH06502962A JP2515543A JP51554390A JPH06502962A JP H06502962 A JPH06502962 A JP H06502962A JP 2515543 A JP2515543 A JP 2515543A JP 51554390 A JP51554390 A JP 51554390A JP H06502962 A JPH06502962 A JP H06502962A
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Prior art keywords
die
base layer
fixing
semiconductor
central portion
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Pending
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JP2515543A
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Japanese (ja)
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ハンバーゲン　ウィリアム　リース
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ディジタル　イクイプメント　コーポレイション
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    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
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Abstract

(57)【要約】本公報は電子出願前の出願データであるため要約のデータは記録されません。 (57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【発明の詳細な説明】 発明の名称　ダイス固Ｍ構造及び方法 本発明は一般に半導体デバイスに関し、特に半導体ダイスを基層に固着する構造 及び方法に関する。[Detailed description of the invention] Title of the invention Dice solid M structure and method TECHNICAL FIELD The present invention relates generally to semiconductor devices, and more particularly to structures for securing semiconductor dice to a base layer. and methods.

大きな高電力半導体チップあるいはデバイスは、一般に金属あるいはセラミック 基層上に載置され、これら金属あるいはセラミックはヒートシンクとして働き、 チップあるいはデバイスから熱を放散させる。従来技術ではダイスを基層に固着 するため、一般的にはんだ、接着剤、あるいはフリットガラスのような単一の物 質を用いつつ、平面型のダイスを平面型の基層に対して接合していた。もしこれ が適切になされれば、均一な厚みの接合が達成される。Large, high-power semiconductor chips or devices are typically made of metal or ceramic. Placed on a substrate, these metals or ceramics act as heat sinks, Dissipate heat from a chip or device. Conventional technology fixes the die to the base layer typically a single object such as solder, adhesive, or fritted glass. A planar die was bonded to a planar base layer while using a high quality material. If this If done properly, a bond of uniform thickness will be achieved.

このような従来技術における問題の１つとして熱放散の問題、即ち、ダイスの中 央付近では熱く、そのエツジ付近では冷たくなる傾向があるという問題がある。One of the problems with such conventional technology is the problem of heat dissipation, that is, the problem of heat dissipation inside the die. The problem is that it tends to be hot near the center and cold near the edges.

このような熱はデバイス性能を制限し、時には半導体にダメージを与えてしまう こともあり得る。Such heat limits device performance and sometimes damages semiconductors. It is possible.

また、ダイスと基層間の熱勾配、及び膨張係数の非整合により、接合部には歪み が生じる。この歪みはダイスの中央付近において最小であり、そのエツジ付近に 向かうにつれて増加し、その結果その接合部を破壊してしまうこともある。Additionally, due to thermal gradients and expansion coefficient mismatches between the die and the substrate, the joint will be strained. occurs. This distortion is lowest near the center of the die, and near the edges. It may increase as the joint progresses towards the end, resulting in destruction of the joint.

ダイス及び基層間の熱伝達と接合部における歪みレベルは、共に接合部の厚みに 依存し、接合部の厚みが薄くなれはなる程熱伝達は向上するが、歪みの割合は高 くなる。従来のダイス固着において、接合部の厚みは、適切な熱伝達と許容可能 な歪みレベルとの妥協点を示すものである。取り分け、大きな高電力チップを用 いてこれを実現することは困難である。Heat transfer between the die and substrate and the strain level at the joint both depend on the thickness of the joint. The thinner the joint, the better the heat transfer, but the higher the strain rate. It becomes. In traditional die bonding, the joint thickness is acceptable with adequate heat transfer. This represents a compromise with a reasonable distortion level. Especially when using large, high-power chips. However, this is difficult to achieve.

本発明は改善されたダイス固着構造及び方法を提供する。本発明の構造及び方法 によれば、ダイスにおける温度分布をより均一なものとし、しかもこのダイスの エツジ付近の接合部における歪みを減少させるような方法でダイスと基層間の接 合が提供される。ある実施例では、基層はダイス固着領域において非平面型の表 面を用いて形成さね、更に、ダイスと基層間の接合部は、その中央部よりもダイ スのエツジに向かうにつれ厚みを増すようにされている。また他の実施例では、 その接合部が、ダイスの中央部に向かうにつれて硬く、そしｔエツジに向かうに つれて柔軟なものとなるよう、異なるダイス固着物質が使用される。更にある実 施例では、厚みが増加された接合部と異なるダイス固着物質とが併用される。The present invention provides an improved die securing structure and method. Structure and method of the present invention According to The connection between the die and the substrate in a manner that reduces strain at the joint near the edges. provided. In some embodiments, the base layer has a non-planar surface in the die attachment area. In addition, the joint between the die and the substrate is closer to the die than its center. The thickness increases toward the edge of the surface. In other embodiments, The joint becomes harder toward the center of the die, and harder toward the edges. Different die bonding materials are used to make them more flexible. More fruit In some embodiments, increased joint thickness and different die bonding materials are used.

第１図は、本発明によるダイス固着構造の一実施例による断面図をその一部を拡 大して示したものである。FIG. 1 is a partially enlarged cross-sectional view of one embodiment of the die fixing structure according to the present invention. This is a great indication.

第２〜第４図は、第１図と同様な図面であり、本発明によるダイス固着構造の他 の実施例を示すものである。2 to 4 are similar drawings to FIG. 1, except for the die fixing structure according to the present invention. This is an example of the following.

第１図は本発明を一般的な矩形半導体ダイス１１と一般的な平面型基層１２で示 している。ダイスは平面型低表面１３を有し、基層はこのダイスを受け入れるダ イス固着領域１４を有する。ダイス固着領域は、隆起された中央部分１６と窪。FIG. 1 illustrates the invention with a typical rectangular semiconductor die 11 and a typical planar base layer 12. are doing. The die has a planar lower surface 13 and the base layer has a die that receives the die. It has a chair fixing area 14. The die fixation area includes a raised central portion 16 and a depression.

みを有する外側部分１７を有し、このダイスの中央部分はダイス固着領域の隆起 ダイスの低表面と基層の表面との間の領域を満たすようなダイス固着物質１９に よって基層に接着される。こうして比較的薄い接合部２１がダイス中央部分下方 に形成され、より厚い接合部２２がエツジ部分下方に形成される。The central part of the die has a raised outer part 17 in the die fixation area. a die fixing material 19 filling the area between the lower surface of the die and the surface of the base layer; Therefore, it is adhered to the base layer. In this way, a relatively thin joint 21 is formed under the central part of the die. A thicker joint 22 is formed below the edge portion.

ダイス固着領域の隆起部分は平面型表面２３を有し、この領域の窪み部分は隆起 領域の表面よりも幾分下に位置づけられた平面型表面２４を有する。ダイスの低 表面はこれらの表面に平行である。The raised part of the die fixation area has a planar surface 23, and the recessed part of this area has a raised part. It has a planar surface 24 located somewhat below the surface of the region. dice low The surfaces are parallel to these surfaces.

ダイス中央部のより薄い接合部によって、その領域におけるダイスと基層間の熱 伝達はよりよく行われることとなり、この結果、ダイス全体でより均一な温度と なる。ダイスのエツジに向かうにつれて接合部を厚くすることにより、エツジ付 近の歪みは減少されるが、厚みをより増加させた接合部は、より薄い接合部を用 いた場合よりも、そのエツジにおいてダイスの温度がいくらか高いものとなるか もしれない。エツジ温度はより高いものであっても問題はないが、その中央部で は接合部がより薄いため、ダイス温度のピークは実際には減少される。A thinner joint in the center of the die reduces heat between the die and the substrate in that area. The transmission is better, resulting in a more uniform temperature across the die. Become. By making the joint thicker towards the edge of the die, Although the near distortion is reduced, the increased thickness of the joint allows for thinner joints to be used. Is the temperature of the die somewhat higher at that edge than it would have been if it were Maybe. There is no problem even if the edge temperature is higher, but in the center Because the junction is thinner, the peak die temperature is actually reduced.

第２図の実施例はほぼ第１図の実施例と同じであり、これら２つの実施例におい て対応する素子には同じ参照番号が示されている。しかしながら第２図の実施例 では、ダイス固着領域の隆起された中央部分のエツジ２６は除去すｆＬｂち丸み を帯びるようにされ、この領域の窪み部分は凹表面２７を用いて形成されている 。The embodiment of FIG. 2 is substantially the same as the embodiment of FIG. Corresponding elements are given the same reference numerals. However, the embodiment of FIG. Then, the raised center edge 26 of the die fixing area is removed. The recessed portion in this area is formed using a concave surface 27. .

このようにして表面の輪郭を形成することにより、ダイス全体における温度、及 び／又は、歪み分布を最適化することが可能となる。By contouring the surface in this way, the temperature and It becomes possible to optimize the strain distribution and/or strain distribution.

第３図の実施例において、ダイス固着領域の中央部分の上表面３１は凸状の湾曲 を有し、窪み部分は第２図の実施例と同様に凹状の湾曲を有する。このような表 面輪郭形成により、ダイスの全表面において温度、及び／また、歪み分布を最適 化することが可能となる。In the embodiment of FIG. 3, the upper surface 31 of the central portion of the die fixing area has a convex curve. , and the recessed portion has a concave curvature similar to the embodiment of FIG. A table like this Surface contouring optimizes temperature and/or strain distribution over the entire die surface It becomes possible to convert into

第４図の実施例はほぼ第３図の実施例と同じであり、これらの図において対応す る素子には同じ参照番号が付されている。しかしながら、この第４図の実施例で は、ダイスのエツジ部分は固着領域の窪み部分を越えて拡がっており、ダイスは この固着領域のフロア３３によって支持されている。これにより、組立ての間、 このダイスをあるレベル位置に保持するための固定や工具の必要性はなくなるが 、これによってダイスのエツジに歪みを集中させてしまうことになる。ダイスが 破壊されてしまうのを防ぐため、この実施例で使用される接着剤としては、この ダイスのエツジ部分が破壊する前に壊れるようなものが選択される。The embodiment in FIG. 4 is almost the same as the embodiment in FIG. The same reference numerals are given to the same elements. However, in this embodiment of FIG. In this case, the edge of the die extends beyond the concave part of the fixed area, and the die is It is supported by the floor 33 of this fastening area. This allows, during assembly, This eliminates the need for fixtures or tools to hold the die in a certain level position. , this causes distortion to be concentrated at the edges of the die. The dice To prevent damage, the adhesive used in this example was A die is selected that will break before the edge of the die breaks.

もし望むなら、基層のダイス固着領域内に輪郭形成された載置表面を形成せず、 ダイスの低表面を非平面型表面で形成することにより、より厚い接合部やより薄 い接合部を形成することが可能である。また、ダイスまたは基層は共に非平面型 あるいは輪郭形成された表面を用いて形成され得る。If desired, do not form a contoured resting surface in the die anchoring area of the base layer; By forming the lower surface of the die with a non-planar surface, thicker joints and thinner It is possible to form large joints. Additionally, both the die and the base layer are non-planar. Alternatively, it may be formed using a contoured surface.

ダイスを基層に接着するダイス固着物質は、この目的のために適切などのような 物質も使用することができる。このような物質として、はんだ、有機入り接着剤 、ガラス／金属フリットのようなものがある。The die bonding material that bonds the die to the base layer may be any suitable material for this purpose. Substances can also be used. Such substances include solder and organic adhesives. , glass/metal frit.

温度分布及び歪みレリーフの改善は、ダイスの異なる部分に対して異なるダイス 固着物質を使用することによっても達成され得る。例えば、比較的強く、堅い物 質を歪みが最小の中央領域に使用し、より弱く、より柔軟な物質を歪みがより大 きいエツジに向かって使用することによる。中央領域で使用される物質としてよ り好ましいものは、高い温度伝導性を有するものであり、エツジ部で使用される 物質はより低い温度伝導性を有し得るものである。適切な物質として、中央領域 に対しては、エポキシ入りの非常に堅い銀あるいはダイアモンド、外部領域には 熱可塑性物質が挙げられる。この技術分野に関係する者には明かなように、これ らの物質は、ダイス固着物質として使用する可能な多数の物質中のほんのわずか な例にすぎない。Improved temperature distribution and strain relief can be achieved by using different dies for different parts of the die. This can also be achieved by using adhesive substances. For example, relatively strong and hard objects use materials in the central region where the distortion is least, and use weaker, more flexible materials in the central region where the distortion is greater. By using it towards the edge. Good as a substance used in the central area. The preferred material is one that has high temperature conductivity and is used at the edge. The material may have a lower thermal conductivity. As a suitable substance, the central area for very hard silver or diamond with epoxy, for external areas Examples include thermoplastics. As is clear to those involved in this technical field, this These materials are just a few of the many possible materials that can be used as die bonding materials. This is just an example.

中央領域及び外部領域に対して異なる物質が使用される場合、２つの領域内で異 なる接合部の厚みを用いる必要はなく、ダイス及び基層これら両方の表面を平ら なものすることが可能である。しかしながら、これら２つの解決法を結びつけ、 比較的強く堅い物質を中央領域内のより薄い接合部に対して、より弱くより柔軟 な物質を外部領域内のより厚い接合部に対して、用いることも可能である。If different materials are used for the central and outer regions, the differences within the two regions There is no need to use a joint thickness that is It is possible to do something. However, combining these two solutions, Relatively strong and stiff materials versus thinner joints in the central region, which are weaker and more flexible It is also possible to use similar materials for thicker junctions in the external region.

本発明は多数の重要な特徴及び利点を有する。本発明はダイスと基層間の接合部 を改善し、接合部の両端の熱伝達を改善する一方、接合部の機械歪みの耐久度を 増加させる。ダイスのエツジ付近の接合部を中央付近よりもより厚くすることに より、その中央部における熱伝達はより大きなものとされ得る。より強く、より 熱伝導性のよいダイス物質を接合部の中央に、そしてより弱くより柔軟な物質を エツジに向かって用いることにより、中央に向かってより大きな熱伝達を行ない 、またエツジ付近の歪みの耐久度を増大させることも可能となる。接合部をより 小さくすることと、異なる領域に異なる接合物質を用いるとを組み合わせるこき により、温度及び歪み分布をより制御することが可能となる。The invention has a number of important features and advantages. The present invention provides a joint between the die and the base layer. This improves the heat transfer at both ends of the joint, while reducing the mechanical strain resistance of the joint. increase. The joints near the edges of the die are made thicker than those near the center. Therefore, the heat transfer in the central part can be made larger. stronger and more Place a die material with good thermal conductivity in the center of the joint and a weaker, more flexible material. By using it toward the edges, more heat is transferred toward the center. , it is also possible to increase the durability of distortion near the edges. The joint is more Combining miniaturization and using different bonding materials in different areas This makes it possible to better control temperature and strain distribution.

以上の記載から、新しく改善されたダイス固着構造及び方法が提供されることは 明かであろう。しかしながら、以上の記載はより好ましい実施例を詳細に述べた だけのものであり、当業者に明かなように、請求の範囲で定められた本発明の範 囲を逸脱することなく、さまざまな変形や変更を行なうことが可能である。From the above description, it is clear that a new and improved die fixing structure and method is provided. It should be obvious. However, the above description details more preferred embodiments. as is clear to those skilled in the art, the scope of the invention as defined in the claims. Various modifications and changes can be made without departing from the scope.

国際調査報告 国際調査報告 ＵＳ　９００５７３１ Ｓ＾　４１９２７international search report international search report US9005731 S^　41927

Claims (21)

【特許請求の範囲】[Claims] １．半導体デバイ父において、１つの載置表面を持つダイス固着領域を有する基 層と、前記載置表面に面した１つの表面を有する半導体ダイスを備え、前記表面 の１つはダイスの中央部分がエッジ部分よりも基層に近接するような方法で輪郭 形成されており、前記半導体デバイスは更に、ダイスの中央部分と基層との間の 領域を満たしその中央部分を基層に接着する第１のダイス固着物質と、ダイスの エッジ部分と基層との間の領域を満たしエッジ部分を基層に接着する第２のダイ ス固着物質とを備えることを特徴とする半導体デバイス。1. In semiconductor devices, a base having a die fixing area with one mounting surface is used. a semiconductor die having a layer and one surface facing said surface, said surface One is to contour in such a way that the central part of the die is closer to the substrate than the edge parts. formed, the semiconductor device further comprising: a central portion of the die and a base layer; a first die-fixing material filling the region and bonding its central portion to the base layer; a second die filling the area between the edge portion and the base layer and bonding the edge portion to the base layer; 1. A semiconductor device comprising: a substance that fixes soot; ２．請求頃記載のデバイスにおいて、前記ダイス固着領域は隆起された中央部分 と、前記載置表面を形成する表面を備えた窪んだ外側部分を備えるデバイス。2. The device according to the claims, wherein the die anchoring region comprises a raised central portion. and a recessed outer portion having a surface forming said mounting surface. ３．請求項１記載のデバイスにおいて、前記第１のダイス固着物質は前記第２の ダイス固着物質よりも堅いデバイス。3. 2. The device of claim 1, wherein the first die-fixing material is A device that is stiffer than the die-fixed material. ４．請求項１記載のデバイスにおいて、前記第１のダイス固着物質は前記第２の ダイス固着物質よりもより高い熱伝導性を有するデバイス。4. 2. The device of claim 1, wherein the first die-fixing material is A device with higher thermal conductivity than the die-bound material. ５．半導体デバイスにおいて、１つの載置表面を持つダイス固着領域を有する基 層と、前記載置表面に面した１つの表面を有する半導体ダイスを備え、前記表面 の１つはダイスの中央部分がエッジ部分よりも基層に近接するような方法で輪郭 形成されており、前記半導体デバイスは更に、ダイスと基層との間の領域を満た しダイスの中央部分に向かって比較的薄くなりエッジ部分に向かって比較的厚く なるような接合によってダイスを基層に接着するダイス固着物質を備えることを 特徴とする半導体デバイス。5. In a semiconductor device, a base having a die fixing area with one mounting surface is used. a semiconductor die having a layer and one surface facing said surface, said surface One is to contour in such a way that the central part of the die is closer to the substrate than the edge parts. formed, and the semiconductor device further fills the area between the die and the base layer. The die becomes relatively thin towards the center and relatively thick towards the edges. A die-fixing material is provided to bond the die to the base layer by bonding such that Characteristic semiconductor devices. ６．請求項５記載のデバイスにおいて、前記ダイス固着領域は隆起された中央部 分と、前記載置表面を形成する表面を備えた窪んだ外側部分を備えるデバイス。6. 6. The device of claim 5, wherein the die anchoring region includes a raised central portion. and a recessed outer portion with a surface forming said mounting surface. ７．請求項６記載のデバイスにおいて、前記ダイス固着領域の中央及び外側部分 の表面は共にほぼ平らであるデバイス。7. 7. The device of claim 6, wherein the central and outer portions of the die anchoring region Both surfaces of the device are approximately flat. ８．請求項６記載のデバイスにおいて、前記ダイス固着領域の外側部分の表面は 凹状であるデバイス。8. 7. The device of claim 6, wherein the surface of the outer portion of the die fixing region is A device that is concave. ９．請求項６記載のデバイスにおいて、前記ダイス固着領域の中央部分の表面は その中間に向かって平らであり、その周辺に向かって丸みを帯びているデバイス 。9. 7. The device of claim 6, wherein the surface of the central portion of the die fixing region is A device that is flat towards its middle and rounded towards its periphery . １０．請求項６記載のデバイスにおいて、前記ダイス固着領域の中央部分の表面 は凸状であるデバイス。10. 7. The device according to claim 6, wherein a surface of a central portion of the die fixing region. is a convex device. １１．半導体デバイスにおいて、ダイス固着領域を有する基層と、このダイス固 着領域内の半導体ダイスと、ダイスの中央部分を前記基層に接着する比較的堅い ダイス固着物質と、ダイスのエッジ部分を前記基層に接着するより柔軟なダイス 固着物質とを備えることを特徴とする半導体デバイス。11. In a semiconductor device, a base layer having a die fixing region and a base layer having a die fixing region, a semiconductor die in the bonding area and a relatively rigid bonding area to bond the central portion of the die to the base layer. A die-fixing material and a more flexible die bonding the edge portion of the die to said base layer. A semiconductor device comprising a fixed substance. １２．請求項１１記載のデバイスにおいて、前記比較的堅いダイス固着物質は前 記柔軟な物質よりもより高い熱伝導性を有するデバイス。12. 12. The device of claim 11, wherein the relatively hard die fixing material is Devices with higher thermal conductivity than flexible materials. １３．半導体ダイスを基層に固着する方法において、前記ダイス及び前記基層を 面する関係で位置うけたときに前記ダイスの中央部分が前記エッジ部分よりも基 層に近接するようにして前記ダイス及び前記基層の一方の上に非平面型表面を形 成する段階と、前記ダイスの中央部分と基層との間の第１のダイス固着物質と前 記ダイスのエッジ部分と基層との間の第２のダイス固着物質を用いて前記ダイス を前記基層に面する関係で接着する段階とを備えることを特徴とする方法。13. In a method of fixing a semiconductor die to a base layer, the die and the base layer are bonded together. The center portion of said die is more base than said edge portion when placed in facing relationship. forming a non-planar surface on one of the die and the base layer in close proximity to the layer; forming a first die-fixing material between the center portion of the die and the base layer; The die is bonded using a second die fixing material between the edge portion of the die and the base layer. and adhering the substrate in facing relation to the base layer. １４．請求項１３記載の方法において、前記基層は前記ダイスが載置される非平 面型表面を用いて形成される方法。14. 14. The method of claim 13, wherein the base layer is a non-flat surface on which the die is placed. A method formed using a planar surface. １５．半導体ダイスを基層に固着する方法において、前記ダイス及び前記基層が 面する関係で位置づけられたときに前記ダイスの中央部分がエッジ部分よりも前 記基層に近接するようにして前記ダイス及び前記基層の一方の上に非平面型表面 を形成する段階と、前記ダイスと前記基層との間の領域を満たし前記ダイスの中 央部分に向かって比較的薄くなり前記エッジ部分に向かって厚くなるような接合 を形成するダイス固着物質を用いて前記ダイスを前記基層に面する関係で接着す る段階とを備えることを特徴とする方法。15. A method of fixing a semiconductor die to a base layer, wherein the die and the base layer The center portion of said die is more forward than the edge portion when positioned in facing relationship. a non-planar surface on one of the die and the base layer in close proximity to the base layer; filling the area between the die and the base layer and forming a A joint that is relatively thin toward the center and thicker toward the edge. bonding said die in facing relation to said base layer using a die bonding material forming a A method characterized by comprising the steps of: １６．請求項１５記載の方法において、隆起された中央部分と窪んだ外側部分を 有するダイス固着領域を形成することによって前記非平面型表面が前記基層上に 形成されている方法。16. 16. The method of claim 15, comprising a raised central portion and a recessed outer portion. the non-planar surface is on the base layer by forming a die anchoring region with The way it is formed. １７．請求項１６記載の方法において、前記ダイス固着領域の前記中央及び前記 外側部分は共にほぼ平坦な表面を用いて形成されている方法。17. 17. The method of claim 16, wherein the center of the die fixing area and the A method in which both outer portions are formed using substantially flat surfaces. １８．請求項１６記載の方法において、前記ダイス固着領域の前記外側部分は凹 状の表面を用いて形成されている方法。18. 17. The method of claim 16, wherein the outer portion of the die anchoring region is recessed. This method uses a shaped surface. １９．請求項１６記載の方法において、前記ダイス固着領域の前記中央部分はそ の中間に向かって平らであり、その周辺に向かって丸みを帯びているような表面 を用いて形成されている方法。19. 17. The method of claim 16, wherein the central portion of the die anchoring region is a surface that is flat towards the middle and rounded towards its periphery The method of formation using ２０．請求項１６記載の方法において、前記ダイス固着領域の中央部分は凸表面 を用いて形成されている方法。20. 17. The method of claim 16, wherein the central portion of the die fixing region has a convex surface. The method of formation using ２１．半導体ダイスを基層に固着する方法において、前記ダイスの中央部分と基 層との間の第１のダイス固着物質と前記ダイスのエッジ部分と前記基層との間の 第２のダイス固着物質とを用いて前記ダイスを前記基層に接着する方法。21. In a method of fixing a semiconductor die to a base layer, a central portion of the die and a base layer are bonded together. a first die fixing material between the layer and the edge portion of the die and the base layer; and a second die adhesion material.
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