KR890003013A - 반도체 장치용 부품간의 접속 구조물 - Google Patents
반도체 장치용 부품간의 접속 구조물 Download PDFInfo
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- KR890003013A KR890003013A KR1019880008211A KR880008211A KR890003013A KR 890003013 A KR890003013 A KR 890003013A KR 1019880008211 A KR1019880008211 A KR 1019880008211A KR 880008211 A KR880008211 A KR 880008211A KR 890003013 A KR890003013 A KR 890003013A
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- Prior art keywords
- alloy
- iron
- nickel
- substrate
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 16
- 239000000758 substrate Substances 0.000 claims description 17
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims 15
- 230000035882 stress Effects 0.000 claims 9
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 8
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 claims 7
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 claims 7
- 229910000531 Co alloy Inorganic materials 0.000 claims 6
- 229910045601 alloy Inorganic materials 0.000 claims 6
- 239000000956 alloy Substances 0.000 claims 6
- 229910052782 aluminium Inorganic materials 0.000 claims 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims 4
- 229910000990 Ni alloy Inorganic materials 0.000 claims 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 4
- 238000005219 brazing Methods 0.000 claims 4
- 238000001816 cooling Methods 0.000 claims 4
- 229910052802 copper Inorganic materials 0.000 claims 4
- 239000010949 copper Substances 0.000 claims 4
- 229910052742 iron Inorganic materials 0.000 claims 4
- 238000005476 soldering Methods 0.000 claims 4
- 230000008646 thermal stress Effects 0.000 claims 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- 230000008878 coupling Effects 0.000 claims 2
- 238000010168 coupling process Methods 0.000 claims 2
- 238000005859 coupling reaction Methods 0.000 claims 2
- 238000001465 metallisation Methods 0.000 claims 2
- 238000007747 plating Methods 0.000 claims 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- -1 aluminum compound Chemical class 0.000 claims 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims 1
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 claims 1
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 claims 1
- 239000000292 calcium oxide Substances 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910052760 oxygen Inorganic materials 0.000 claims 1
- 239000001301 oxygen Substances 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- 239000002131 composite material Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
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Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제 3 A 및 3B도는 본 발명에 따라 반도체 장치용 부품간 접속 구조물을 제조하는 2가지 방법을 개략적으로 도시한 공정도. 제 4 A,제 4 B및 4 C도는 본 발명의 실시예에 따른 반도체 장치용 부품간 접속 구조물, 즉 리드 프레임, 응력 제거 부재 및 질화 알루미늄 기판간 접속 구조물을 도시한 평면도 및 단면도. 제 5 A,5 B 및 5 C 도는 본 발명의 다른 실시예에 따른 반도체 장치용 부품간 접속 구조, 즉 복합 금속판의 리드 프레임 및 질화 알루미늄 기판간 접속 구조물을 도시한 평면도 및 단면도.
Claims (19)
- 반도체 장치의 부품간 접속 구조물에 있어서, 반도체 장치가 설치되는 주 표면을 가진 질화 알루미늄의 기재와, 상기 기재에 결합되면서 주 재료의 철-니켈 합금과 철-니켈-코발트 합금의 어느 것을 포함하는 접속 부재와, 상기 접속 부재 사이에 개재된 응력 제거 부재와, 상기 기재, 상기 응력 제거 부재 및 상기 접속 부재를 결합시키는 납땜 재료를 포함하며, 상기 응력 제거 부재는 소성으로 변형되는 높은 소성 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되어 납땜시의 냉각 처리시 상기 기재의 열팽창 계수와 상기 접속 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 접속 구조물.
- 제 1 항에 있어서, 상기 응력 제거 부재는 구리, 구리합금, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것이 특징인 접속 구조물.
- 제 1 항에 있어서, 상기 접속 부재는 리드 프레임을 포함하는 것이 특징인 접속 구조물.
- 제 3 항에 있어서, 상기 응력 제거 부재는, 상기 리드 프레임이 0.1 mm의 두께와 8mm폭을 가질때 0.01 내지 1mm범위의 두께를 가지는 것이 특징인 접속 구조물.
- 제 1 항에 있어서, 상기 기재는 소결체를 포함하는 것이 특징인 접속 구조물.
- 제 1 항에 있어서, 상기 접속 구조물은 상기 기재의 접합면상에 형성된 금속화층을 추가로 포함하는 것이 특징인 접속 구조물.
- 제 6 항에 있어서, 상기 금속화층은 텅스텐과 몰리브덴 중에서 선택된 적어도 하나의 금속과, 질화 알루미늄, 산화 알루미늄 및 산소 질화 알루미늄의 그룹 중에서 선택된 적어도 하나의 알루미늄 화합물을 산화칼슘을 포함하는 것이 특징인 접속 구조물.
- 제 6 항에 있어서, 상기 납땜 재료와 결합되기 위하여 상기 접속 부재의 표면상에 형성된 도금층을 추가로 포함하는 것이 특징인 접속 구조물.
- 제 8 항에 있어서, 상기 납땜 재료와 결합되기 위하여 상기 접속 부재의 표면상에 형성된 도금층을 추가로 포함하는 것이 특징인 접속 구조물.
- 반도체 장치의 부품간 접속 구조물에 있어서, 반도체 장치가 설치되는 주 표면을 가진 질화 알루미늄의 기재와, 상기 기재에 결합되면서 주 재료의 철-니켈 합금과 철-니켈-코발트 합금의 어느 것을 포함하는 접속 부재와, 상기 기재와 상기 부재를 결합시키는 납땜 재료와, 소성으로 변형되는 높은 소성 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되면서 상기 기재에 결합되는 상기 접속 부재의 적어도 한 표면을 포함하여, 납땜시의 냉각 처리시 상기 기재의 열 팽창 계수와 상기 접속 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 접속 구조물.
- 제10항에 있어서, 상기 기재에 결합되는 상기 접속 부재의 적어도 한 표면은 구리, 구리합금, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것이 특징인 접속 구조물.
- 제10항에 있어서, 상기 접속 부재는 리드 프레임을 포함하는 것이 특징인 접속 구조물.
- 제12항에 있어서, 상기 기재에 결합되는 상기 접속 부재의 적어도 한 부분은 철-니켈 합금과 철-니켈-코발트 중의 어느 것으로 형성된 내층부와 연성 금속 및 연성 합금중의 어느 것으로 형성된 외층부를 포함하는 것을 특징으로 하는 접속 구조물.
- 제13항에 있어서, 상기 접속 부재는 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것으로 형성된, 상기 기재에 결합되는 부분 이외의 다른 부분을 가지는 것이 특징인 접속 구조물.
- 절연 기판상에 설치된 반도체 장치를 기밀적으로 둘러싸는 캡에 있어서, 상기 반도체 장치를 보호하기 위하여 상기 반도체 장치상에 구비된 질화 알루미늄의 덮개 부재와, 상기 덮개 부재 아래에 위치된 상기 반도체 장치를 둘러싸기 위하여 상기 덮개 부재에 결합되면서, 주 재료로서 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것을 포함하는 프레임 부재와, 상기 덮개 부재와 상기 프레임 부재 사이에 개재된 응력 제거 부재와, 상기 덮개 부재, 상기 응력 제거 부재 및 상기 프레임 부재를 결합시키는 납땜 재료를 포함하며, 상기 응력 제거 부재는 소성으로 변형되는 높은 소성 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되어 납땜시의 냉각 처리시 상기 덮개 부재의 열 팽창 계수와 상기 프레임 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 캡.
- 제15항에 있어서, 상기 응력 제거 부재는 구리, 구리합금, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것을 특징으로 하는캡.
- 절연 기판상에 설치된 반도체 장치를 기밀적으로 둘러싸는 캡에 있어서, 상기 반도체 장치를 보호하기 위하여 상기 반도체 장치상에 구비된 질화 알루미늄의 덮개 부재와, 상기 덮개 부재 아래에 위치된 상기 반도체 장치를 둘러싸기 위하여 상기 덮개 부재에 결합되면서, 주 재료로서 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것을 포함하는 프레임 부재와, 상기 덮개 부재와 상기 프레임 부재를 결합시키는 납땜 재료와, 가소성으로 변형되는 높은 플라스틱 변형성을 가진 연성 금속 및 연성 합금의 어느 것으로 형성되면서 상기 덮개 부재에 결합되는 상기 프레임 부재의 적어도 한 표면을 포함하여, 납땜시의 냉각 처리시 상기 덮개 부재의 열 팽창 계수와 상기 프레임 부재의 열 팽창 계수간의 차이에 의해 생기는 열 응력을 제거하게 되어 있는 것을 특징으로 하는 캡.
- 제17항에 있어서, 상기 덮개 부재에 결합되는 상기 프레임 부재의 적어도 한 표면은 구리, 구리합금, 니켈, 니켈합금, 철 및 알루미늄 중에서 선택된 재료중의 어느 것으로 형성되는 것을 특징으로 한는 캡.
- 제17항에 있어서, 상기 덮개 부재에 결합되는 상기 프레임 부재의 적어도 한 부분은 철-니켈 합금과 철-니켈-코발트 합금중의 어느 것으로 형성된 내층부와, 연성 금속 및 연성 합금중의 어느 것으로 형성된 외층부를 포함하는 것이 특징인 캡.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Applications Claiming Priority (12)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16519087 | 1987-07-03 | ||
JP62-165190 | 1987-07-03 | ||
JP165190 | 1987-07-03 | ||
JP175070 | 1987-07-14 | ||
JP62-175070 | 1987-07-14 | ||
JP17507087 | 1987-07-14 | ||
JP275277 | 1987-10-30 | ||
JP62-275277 | 1987-10-30 | ||
JP27527787 | 1987-10-30 | ||
JP31533087 | 1987-12-15 | ||
JP62-315330 | 1987-12-15 | ||
JP315330 | 1987-12-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR890003013A true KR890003013A (ko) | 1989-04-12 |
KR910007016B1 KR910007016B1 (ko) | 1991-09-14 |
Family
ID=27473981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019880008211A KR910007016B1 (ko) | 1987-07-03 | 1988-07-02 | 반도체 장치용 부품간의 접속 구조물 |
Country Status (6)
Country | Link |
---|---|
US (1) | US5010388A (ko) |
EP (1) | EP0297511B1 (ko) |
KR (1) | KR910007016B1 (ko) |
CA (1) | CA1308494C (ko) |
DE (1) | DE3856562T2 (ko) |
SG (1) | SG48868A1 (ko) |
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US5476211A (en) * | 1993-11-16 | 1995-12-19 | Form Factor, Inc. | Method of manufacturing electrical contacts, using a sacrificial member |
US5529852A (en) * | 1987-01-26 | 1996-06-25 | Sumitomo Electric Industries, Ltd. | Aluminum nitride sintered body having a metallized coating layer on its surface |
EP0425691A4 (en) * | 1989-05-01 | 1993-03-31 | Sumitomo Electric Industries, Ltd. | Lead frame for semiconductor devices |
KR920000127A (ko) * | 1990-02-26 | 1992-01-10 | 미다 가쓰시게 | 반도체 패키지와 그것을 위한 리드프레임 |
US5179435A (en) * | 1990-03-05 | 1993-01-12 | Nec Corporation | Resin sealed semiconductor integrated circuit device |
US5220200A (en) * | 1990-12-10 | 1993-06-15 | Delco Electronics Corporation | Provision of substrate pillars to maintain chip standoff |
WO1992022090A1 (en) * | 1991-06-03 | 1992-12-10 | Motorola, Inc. | Thermally conductive electronic assembly |
US5432535A (en) * | 1992-12-18 | 1995-07-11 | Xerox Corporation | Method and apparatus for fabrication of multibeam lasers |
US6696103B1 (en) | 1993-03-19 | 2004-02-24 | Sumitomo Electric Industries, Ltd. | Aluminium nitride ceramics and method for preparing the same |
JP3593707B2 (ja) * | 1993-03-19 | 2004-11-24 | 住友電気工業株式会社 | 窒化アルミニウムセラミックスとその製造方法 |
JP3693300B2 (ja) * | 1993-09-03 | 2005-09-07 | 日本特殊陶業株式会社 | 半導体パッケージの外部接続端子及びその製造方法 |
JP3575068B2 (ja) * | 1994-08-02 | 2004-10-06 | 住友電気工業株式会社 | 平滑なめっき層を有するセラミックスメタライズ基板およびその製造方法 |
US5593082A (en) * | 1994-11-15 | 1997-01-14 | Tosoh Smd, Inc. | Methods of bonding targets to backing plate members using solder pastes and target/backing plate assemblies bonded thereby |
WO1996015283A1 (en) * | 1994-11-15 | 1996-05-23 | Tosoh Smd, Inc. | Method of bonding targets to backing plate member |
US5522535A (en) * | 1994-11-15 | 1996-06-04 | Tosoh Smd, Inc. | Methods and structural combinations providing for backing plate reuse in sputter target/backing plate assemblies |
US6783867B2 (en) * | 1996-02-05 | 2004-08-31 | Sumitomo Electric Industries, Ltd. | Member for semiconductor device using an aluminum nitride substrate material, and method of manufacturing the same |
JP3845925B2 (ja) * | 1996-02-05 | 2006-11-15 | 住友電気工業株式会社 | 窒化アルミニウム基材を用いた半導体装置用部材及びその製造方法 |
DE10221085B4 (de) * | 2002-05-11 | 2012-07-26 | Robert Bosch Gmbh | Baugruppe mit einer Verbindungseinrichtung zum Kontaktieren eines Halbleiter-Bauelements und Herstellungsverfahren |
WO2006051881A1 (ja) * | 2004-11-12 | 2006-05-18 | Tokuyama Corporation | メタライズド窒化アルミニウム基板の製造方法及びそれによって得られる基板 |
KR20090042574A (ko) * | 2007-10-26 | 2009-04-30 | 삼성전자주식회사 | 반도체 모듈 및 이를 구비하는 전자 장치 |
JP2011187687A (ja) * | 2010-03-09 | 2011-09-22 | Panasonic Corp | 半導体装置用リードフレームとその製造方法 |
CN103999210B (zh) | 2011-12-22 | 2016-11-02 | 京瓷株式会社 | 布线基板以及电子装置 |
KR102335720B1 (ko) * | 2017-03-27 | 2021-12-07 | 삼성전자주식회사 | 표면 실장용 금속 유닛 및 이를 포함하는 전자 장치 |
CN111989759B (zh) * | 2018-05-30 | 2023-04-25 | 柏恩氏株式会社 | 断路器、安全电路和二次电池组 |
JP7083898B2 (ja) | 2018-06-28 | 2022-06-13 | 京セラ株式会社 | 基体および半導体装置 |
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JPS607157A (ja) * | 1983-06-25 | 1985-01-14 | Masami Kobayashi | Ic用リ−ドフレ−ム |
JPH0810710B2 (ja) * | 1984-02-24 | 1996-01-31 | 株式会社東芝 | 良熱伝導性基板の製造方法 |
JPS61176142A (ja) * | 1985-01-31 | 1986-08-07 | Toshiba Corp | 基板構造体 |
US4780572A (en) * | 1985-03-04 | 1988-10-25 | Ngk Spark Plug Co., Ltd. | Device for mounting semiconductors |
JPH0791610B2 (ja) * | 1985-06-17 | 1995-10-04 | 日本電装株式会社 | 非酸化物セラミックヒータ用金属ロー材 |
US4729010A (en) * | 1985-08-05 | 1988-03-01 | Hitachi, Ltd. | Integrated circuit package with low-thermal expansion lead pieces |
JPS62197379A (ja) * | 1986-02-20 | 1987-09-01 | 株式会社東芝 | 窒化アルミニウム基板 |
JPS6318648A (ja) * | 1986-07-11 | 1988-01-26 | Toshiba Corp | 窒化アルミニウム回路基板 |
JPH0680873B2 (ja) * | 1986-07-11 | 1994-10-12 | 株式会社東芝 | 回路基板 |
US4761518A (en) * | 1987-01-20 | 1988-08-02 | Olin Corporation | Ceramic-glass-metal packaging for electronic components incorporating unique leadframe designs |
-
1988
- 1988-06-28 DE DE3856562T patent/DE3856562T2/de not_active Expired - Lifetime
- 1988-06-28 US US07/212,944 patent/US5010388A/en not_active Expired - Lifetime
- 1988-06-28 CA CA000570627A patent/CA1308494C/en not_active Expired - Fee Related
- 1988-06-28 SG SG1996003201A patent/SG48868A1/en unknown
- 1988-06-28 EP EP88110305A patent/EP0297511B1/en not_active Expired - Lifetime
- 1988-07-02 KR KR1019880008211A patent/KR910007016B1/ko not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR910007016B1 (ko) | 1991-09-14 |
EP0297511B1 (en) | 2003-10-08 |
CA1308494C (en) | 1992-10-06 |
EP0297511A2 (en) | 1989-01-04 |
DE3856562D1 (de) | 2003-11-13 |
EP0297511A3 (en) | 1991-03-13 |
US5010388A (en) | 1991-04-23 |
SG48868A1 (en) | 1998-05-18 |
DE3856562T2 (de) | 2004-08-05 |
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