JPH0216008B2 - - Google Patents

Info

Publication number
JPH0216008B2
JPH0216008B2 JP58243318A JP24331883A JPH0216008B2 JP H0216008 B2 JPH0216008 B2 JP H0216008B2 JP 58243318 A JP58243318 A JP 58243318A JP 24331883 A JP24331883 A JP 24331883A JP H0216008 B2 JPH0216008 B2 JP H0216008B2
Authority
JP
Japan
Prior art keywords
layer
gate
compound semiconductor
active layer
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58243318A
Other languages
English (en)
Japanese (ja)
Other versions
JPS60136264A (ja
Inventor
Masahiro Kamya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58243318A priority Critical patent/JPS60136264A/ja
Publication of JPS60136264A publication Critical patent/JPS60136264A/ja
Publication of JPH0216008B2 publication Critical patent/JPH0216008B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
JP58243318A 1983-12-23 1983-12-23 半導体装置の製造方法 Granted JPS60136264A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58243318A JPS60136264A (ja) 1983-12-23 1983-12-23 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58243318A JPS60136264A (ja) 1983-12-23 1983-12-23 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS60136264A JPS60136264A (ja) 1985-07-19
JPH0216008B2 true JPH0216008B2 (enExample) 1990-04-13

Family

ID=17102047

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58243318A Granted JPS60136264A (ja) 1983-12-23 1983-12-23 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS60136264A (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2991297B2 (ja) * 1988-06-23 1999-12-20 株式会社東芝 電界効果トランジスタ及びその製造方法
JP3125574B2 (ja) * 1994-03-29 2001-01-22 日本電気株式会社 化合物半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857752A (ja) * 1981-09-30 1983-04-06 Nec Corp 半導体装置の製造方法
US4404732A (en) * 1981-12-07 1983-09-20 Ibm Corporation Self-aligned extended epitaxy mesfet fabrication process
JPS5979576A (ja) * 1982-10-29 1984-05-08 Fujitsu Ltd 電界効果型半導体装置

Also Published As

Publication number Publication date
JPS60136264A (ja) 1985-07-19

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