JPH0153745B2 - - Google Patents

Info

Publication number
JPH0153745B2
JPH0153745B2 JP57127804A JP12780482A JPH0153745B2 JP H0153745 B2 JPH0153745 B2 JP H0153745B2 JP 57127804 A JP57127804 A JP 57127804A JP 12780482 A JP12780482 A JP 12780482A JP H0153745 B2 JPH0153745 B2 JP H0153745B2
Authority
JP
Japan
Prior art keywords
substrate
semiconductor device
layer
transistor
source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57127804A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5870155A (ja
Inventor
Ruudorufu Fueritsukusu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
FUONDASHION SUISU PUURU RA RUSHERUSHU AN MIKUROTEKUNIIKU FSRM
Original Assignee
FUONDASHION SUISU PUURU RA RUSHERUSHU AN MIKUROTEKUNIIKU FSRM
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by FUONDASHION SUISU PUURU RA RUSHERUSHU AN MIKUROTEKUNIIKU FSRM filed Critical FUONDASHION SUISU PUURU RA RUSHERUSHU AN MIKUROTEKUNIIKU FSRM
Publication of JPS5870155A publication Critical patent/JPS5870155A/ja
Publication of JPH0153745B2 publication Critical patent/JPH0153745B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
  • Thin Film Transistor (AREA)
JP57127804A 1981-07-24 1982-07-23 イオンに応答する半導体装置 Granted JPS5870155A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR8114501 1981-07-24
FR8114501A FR2510260A1 (fr) 1981-07-24 1981-07-24 Dispositif semiconducteur sensible aux ions

Publications (2)

Publication Number Publication Date
JPS5870155A JPS5870155A (ja) 1983-04-26
JPH0153745B2 true JPH0153745B2 (en, 2012) 1989-11-15

Family

ID=9260870

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57127804A Granted JPS5870155A (ja) 1981-07-24 1982-07-23 イオンに応答する半導体装置

Country Status (6)

Country Link
US (1) US4636827A (en, 2012)
JP (1) JPS5870155A (en, 2012)
CH (1) CH649173A5 (en, 2012)
DE (1) DE3226555A1 (en, 2012)
FR (1) FR2510260A1 (en, 2012)
GB (1) GB2103014B (en, 2012)

Families Citing this family (56)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59142452A (ja) * 1983-02-02 1984-08-15 Nec Corp イオンセンサ
EP0149330B1 (en) * 1983-12-08 1989-04-26 General Signal Corporation Isfet sensor and method of manufacture
JPS60186749A (ja) * 1984-03-05 1985-09-24 Agency Of Ind Science & Technol イオン選択性電界効果トランジスタ
CA1250020A (en) * 1985-01-23 1989-02-14 Imants R. Lauks Ambient sensing devices with isolation
CA1251514A (en) * 1985-02-20 1989-03-21 Tadashi Sakai Ion selective field effect transistor sensor
JPS63503402A (ja) * 1986-03-21 1988-12-08 アイースタット　コーポレーション 絶縁された環境検知トランスデューサ装置
JPH0446205Y2 (en, 2012) * 1986-12-11 1992-10-29
IT1224606B (it) * 1988-10-10 1990-10-04 Eniricerche Spa Sensore chimico monolitico a membrana ione selettiva di tipo chemfet eprocedimento per la sua realizzazione
US4974592A (en) * 1988-11-14 1990-12-04 American Sensor Systems Corporation Continuous on-line blood monitoring system
JP3001104B2 (ja) * 1989-10-04 2000-01-24 オリンパス光学工業株式会社 センサー構造体及びその製造法
DE4209983A1 (de) * 1992-03-27 1993-09-30 Daimler Benz Ag Verfahren zur Herstellung von in einem Gehäuse angeordneten Halbleiterbauelementen
JP3152727B2 (ja) * 1992-03-31 2001-04-03 株式会社東芝 ノズル型分析装置
US5625209A (en) * 1992-08-26 1997-04-29 Texas Instruments Incorporated Silicon based sensor apparatus
DE4308081A1 (de) * 1993-03-13 1994-09-22 Fraunhofer Ges Forschung Halbleiterbauelement, insbesondere zur Ionendetektion
US6259937B1 (en) * 1997-09-12 2001-07-10 Alfred E. Mann Foundation Implantable substrate sensor
US6041643A (en) * 1998-07-27 2000-03-28 General Electric Company Gas sensor with protective gate, method of forming the sensor, and method of sensing
US6182500B1 (en) 1998-07-27 2001-02-06 General Electric Company Gas sensor with protective gate, method of forming the sensor, and method of sensing
DE10007525A1 (de) * 2000-02-18 2001-09-06 Erhard Kohn ph-Sensoren auf Halbleitern mit hohem Bandabstand
WO2004040291A1 (en) * 2002-10-29 2004-05-13 Cornell Research Foundation, Inc. Chemical-sensitive floating gate field effect transistor
US7361946B2 (en) * 2004-06-28 2008-04-22 Nitronex Corporation Semiconductor device-based sensors
US8349167B2 (en) 2006-12-14 2013-01-08 Life Technologies Corporation Methods and apparatus for detecting molecular interactions using FET arrays
US8262900B2 (en) 2006-12-14 2012-09-11 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
EP3285067B1 (en) 2006-12-14 2022-06-22 Life Technologies Corporation Apparatus for measuring analytes using fet arrays
US11339430B2 (en) 2007-07-10 2022-05-24 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US20100301398A1 (en) 2009-05-29 2010-12-02 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
EP2342552B1 (en) * 2008-10-22 2022-09-14 Life Technologies Corporation Floating gate chemical field effect transistor array with bilayer gate dielectric
US20100137143A1 (en) 2008-10-22 2010-06-03 Ion Torrent Systems Incorporated Methods and apparatus for measuring analytes
DE102009002060B4 (de) * 2009-03-31 2023-08-03 Endress+Hauser Conducta Gmbh+Co. Kg Ionensensitiver Sensor mit Mehrfachschichtaufbau im sensitiven Bereich sowie Verfahren zur Herstellung eines solchen Sensors
US8776573B2 (en) 2009-05-29 2014-07-15 Life Technologies Corporation Methods and apparatus for measuring analytes
US20120261274A1 (en) 2009-05-29 2012-10-18 Life Technologies Corporation Methods and apparatus for measuring analytes
US8731847B2 (en) 2010-06-30 2014-05-20 Life Technologies Corporation Array configuration and readout scheme
TWI539172B (zh) 2010-06-30 2016-06-21 生命技術公司 用於測試離子感測場效電晶體（ｉｓｆｅｔ）陣列之裝置及方法
AU2011226767B1 (en) 2010-06-30 2011-11-10 Life Technologies Corporation Ion-sensing charge-accumulation circuits and methods
US11307166B2 (en) 2010-07-01 2022-04-19 Life Technologies Corporation Column ADC
EP2589065B1 (en) 2010-07-03 2015-08-19 Life Technologies Corporation Chemically sensitive sensor with lightly doped drains
EP2617061B1 (en) 2010-09-15 2021-06-30 Life Technologies Corporation Methods and apparatus for measuring analytes
EP2522993B1 (en) 2011-05-09 2015-11-25 Nxp B.V. FET based sensor with dual-gate stack
US9970984B2 (en) 2011-12-01 2018-05-15 Life Technologies Corporation Method and apparatus for identifying defects in a chemical sensor array
US8786331B2 (en) 2012-05-29 2014-07-22 Life Technologies Corporation System for reducing noise in a chemical sensor array
US9080968B2 (en) 2013-01-04 2015-07-14 Life Technologies Corporation Methods and systems for point of use removal of sacrificial material
US9841398B2 (en) 2013-01-08 2017-12-12 Life Technologies Corporation Methods for manufacturing well structures for low-noise chemical sensors
US8871549B2 (en) * 2013-02-14 2014-10-28 International Business Machines Corporation Biological and chemical sensors
US8963216B2 (en) 2013-03-13 2015-02-24 Life Technologies Corporation Chemical sensor with sidewall spacer sensor surface
CN105051525B (zh) 2013-03-15 2019-07-26 生命科技公司 具有薄导电元件的化学设备
US9835585B2 (en) 2013-03-15 2017-12-05 Life Technologies Corporation Chemical sensor with protruded sensor surface
CN105264366B (zh) 2013-03-15 2019-04-16 生命科技公司 具有一致传感器表面区域的化学传感器
US20140336063A1 (en) 2013-05-09 2014-11-13 Life Technologies Corporation Windowed Sequencing
US10458942B2 (en) 2013-06-10 2019-10-29 Life Technologies Corporation Chemical sensor array having multiple sensors per well
KR102593647B1 (ko) 2014-12-18 2023-10-26 라이프 테크놀로지스 코포레이션 트랜스미터 구성을 갖춘 높은 데이터율 집적 회로
US10379079B2 (en) 2014-12-18 2019-08-13 Life Technologies Corporation Methods and apparatus for measuring analytes using large scale FET arrays
US10077472B2 (en) 2014-12-18 2018-09-18 Life Technologies Corporation High data rate integrated circuit with power management
JP2017053794A (ja) * 2015-09-11 2017-03-16 株式会社東芝 電気化学センサ
US11002704B2 (en) * 2016-08-31 2021-05-11 Taiwan Semiconductor Manufacturing Company Limited Biosensor devices and methods of forming the same
JP2019056581A (ja) * 2017-09-20 2019-04-11 ソニーセミコンダクタソリューションズ株式会社 電荷検出センサおよび電位計測システム
US11588095B2 (en) * 2018-09-28 2023-02-21 Taiwan Semiconductor Manufacturing Company, Ltd. Piezoelectric biosensor and related method of formation
US20250107217A1 (en) * 2023-09-22 2025-03-27 Analog Devices International Unlimited Company Semiconductor devices to detect one or more environmental conditions

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL282170A (en, 2012) * 1961-08-17
US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
US4037242A (en) * 1975-12-29 1977-07-19 Texas Instruments Incorporated Dual injector, floating gate MOS electrically alterable, non-volatile semiconductor memory device
DE2639398A1 (de) * 1976-09-01 1978-03-02 Johnson Controls Inc Kapazitive fuehleinrichtung fuer gasfoermige umweltprodukte
US4103227A (en) * 1977-03-25 1978-07-25 University Of Pennsylvania Ion-controlled diode
US4273636A (en) * 1977-05-26 1981-06-16 Kiyoo Shimada Selective chemical sensitive field effect transistor transducers
US4133735A (en) * 1977-09-27 1979-01-09 The Board Of Regents Of The University Of Washington Ion-sensitive electrode and processes for making the same
JPS5466194A (en) * 1977-11-04 1979-05-28 Kuraray Co Fet sensor
US4180771A (en) * 1977-12-02 1979-12-25 Airco, Inc. Chemical-sensitive field-effect transistor
US4198851A (en) * 1978-05-22 1980-04-22 University Of Utah Method and structure for detecting the concentration of oxygen in a substance
US4397714A (en) * 1980-06-16 1983-08-09 University Of Utah System for measuring the concentration of chemical substances

Also Published As

Publication number Publication date
FR2510260B1 (en, 2012) 1983-12-09
JPS5870155A (ja) 1983-04-26
FR2510260A1 (fr) 1983-01-28
US4636827A (en) 1987-01-13
DE3226555C2 (en, 2012) 1991-08-29
GB2103014B (en) 1985-08-21
GB2103014A (en) 1983-02-09
DE3226555A1 (de) 1983-02-24
CH649173A5 (fr) 1985-04-30

Similar Documents

Publication Publication Date Title
JPH0153745B2 (en, 2012)
US20190131422A1 (en) Chemically sensitive sensor with lightly doped drains
KR930006930A (ko) 수직형 트랜지스터를 갖는 dram셀 및 그 제조방법
US6387724B1 (en) Method of fabricating silicon-on-insulator sensor having silicon oxide sensing surface
KR20130052528A (ko) 수평형 플로팅 게이트를 갖는 ｆｅｔ형 가스 감지소자
KR910001886A (ko) 반도체장치와 그 제조방법
KR890013796A (ko) 반도체장치 및 그 제조방법
WO2023087808A1 (zh) 半导体器件及其制造方法
US4232326A (en) Chemically sensitive field effect transistor having electrode connections
US10928356B2 (en) Ion sensitive field effect transistor (FET) with back-gate coupled reference electrode
KR890003032A (ko) 반도체기억장치 및 그 제조방법
US7211459B2 (en) Fabrication method of an ion sensitive field effect transistor
US6489658B2 (en) MOS-transistor for a photo cell
CN108732225B (zh) 离子敏感场效应晶体管及其形成方法
US7326974B2 (en) Sensor for measuring a gas concentration or ion concentration
JPH01189966A (ja) 不揮発性半導体メモリ装置
JP2988020B2 (ja) 半導体イオンセンサ
JPH0429974B2 (en, 2012)
JPS62293667A (ja) 半導体記憶装置
KR850008762A (ko) 불휘발성 반도체 기억장치의 제조방법
WO2012154027A1 (en) An apparatus for sensor applications and method of manufacturing thereof
JPS61226966A (ja) 半導体装置
JP2011220954A (ja) 化学センサ及び検出方法
JPS6110272A (ja) 半導体装置の製造方法
JPH029306B2 (en, 2012)