JPH0152906B2 - - Google Patents
Info
- Publication number
- JPH0152906B2 JPH0152906B2 JP54103994A JP10399479A JPH0152906B2 JP H0152906 B2 JPH0152906 B2 JP H0152906B2 JP 54103994 A JP54103994 A JP 54103994A JP 10399479 A JP10399479 A JP 10399479A JP H0152906 B2 JPH0152906 B2 JP H0152906B2
- Authority
- JP
- Japan
- Prior art keywords
- circuit
- generation circuit
- bias voltage
- power supply
- connection point
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 78
- 239000004065 semiconductor Substances 0.000 claims description 36
- 230000010355 oscillation Effects 0.000 claims description 16
- 239000003990 capacitor Substances 0.000 claims description 15
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims description 7
- 230000005669 field effect Effects 0.000 claims description 5
- 230000000737 periodic effect Effects 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 claims 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 18
- 229910052710 silicon Inorganic materials 0.000 description 18
- 239000010703 silicon Substances 0.000 description 18
- 238000010586 diagram Methods 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 229910052814 silicon oxide Inorganic materials 0.000 description 11
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000007257 malfunction Effects 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/413—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction
- G11C11/417—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing or power reduction for memory cells of the field-effect type
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is dc
- G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/205—Substrate bias-voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
- G11C5/146—Substrate bias generators
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10399479A JPS5627952A (en) | 1979-08-17 | 1979-08-17 | Circuit for generating substrate bias voltage |
| DE19803030654 DE3030654A1 (de) | 1979-08-17 | 1980-08-13 | Sperrvorspannungsgenerator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10399479A JPS5627952A (en) | 1979-08-17 | 1979-08-17 | Circuit for generating substrate bias voltage |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5627952A JPS5627952A (en) | 1981-03-18 |
| JPH0152906B2 true JPH0152906B2 (de) | 1989-11-10 |
Family
ID=14368844
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10399479A Granted JPS5627952A (en) | 1979-08-17 | 1979-08-17 | Circuit for generating substrate bias voltage |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS5627952A (de) |
| DE (1) | DE3030654A1 (de) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56129358A (en) * | 1980-03-12 | 1981-10-09 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| US4460835A (en) * | 1980-05-13 | 1984-07-17 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator |
| JPS58105563A (ja) * | 1981-12-17 | 1983-06-23 | Mitsubishi Electric Corp | 基板バイアス発生回路 |
| JPS58153294A (ja) * | 1982-03-04 | 1983-09-12 | Mitsubishi Electric Corp | 半導体記憶装置 |
| JPS61164249A (ja) * | 1985-01-16 | 1986-07-24 | Fujitsu Ltd | 半導体装置 |
| JPS6216557A (ja) * | 1985-07-15 | 1987-01-24 | Toshiba Corp | 基板バイアス発生回路 |
| JPS6216556A (ja) * | 1985-07-15 | 1987-01-24 | Toshiba Corp | 基板バイアス発生回路 |
| JPS6441519A (en) * | 1987-08-07 | 1989-02-13 | Mitsubishi Electric Corp | Semiconductor integrated circuit |
| FR2629639A1 (en) * | 1988-04-01 | 1989-10-06 | Balkanski Minko | Self-powered integrated component of the junction type and method for its manufacture |
| KR910007740B1 (ko) * | 1989-05-02 | 1991-09-30 | 삼성전자 주식회사 | 비트라인 안정화를 위한 전원전압 추적회로 |
| US5272676A (en) * | 1990-11-20 | 1993-12-21 | Hitachi, Ltd. | Semiconductor integrated circuit device |
| JP2736483B2 (ja) * | 1992-03-03 | 1998-04-02 | 三菱電機株式会社 | 電圧発生装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148492A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Integrated circuit |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4142114A (en) * | 1977-07-18 | 1979-02-27 | Mostek Corporation | Integrated circuit with threshold regulation |
-
1979
- 1979-08-17 JP JP10399479A patent/JPS5627952A/ja active Granted
-
1980
- 1980-08-13 DE DE19803030654 patent/DE3030654A1/de active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54148492A (en) * | 1978-05-15 | 1979-11-20 | Nec Corp | Integrated circuit |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5627952A (en) | 1981-03-18 |
| DE3030654C2 (de) | 1992-04-23 |
| DE3030654A1 (de) | 1981-03-26 |
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