JPH0152906B2 - - Google Patents

Info

Publication number
JPH0152906B2
JPH0152906B2 JP54103994A JP10399479A JPH0152906B2 JP H0152906 B2 JPH0152906 B2 JP H0152906B2 JP 54103994 A JP54103994 A JP 54103994A JP 10399479 A JP10399479 A JP 10399479A JP H0152906 B2 JPH0152906 B2 JP H0152906B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP54103994A
Other versions
JPS5627952A (en
Inventor
Noburo Tanimura
Kotaro Nishimura
Norimasa Yasui
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP54103994A priority Critical patent/JPH0152906B2/ja
Publication of JPS5627952A publication Critical patent/JPS5627952A/en
Publication of JPH0152906B2 publication Critical patent/JPH0152906B2/ja
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/413Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing, power reduction
    • G11C11/417Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing, timing, power reduction for memory cells of the field-effect type
    • GPHYSICS
    • G05CONTROLLING; REGULATING
    • G05FSYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02Regulating voltage or current
    • G05F3/08Regulating voltage or current wherein the variable is dc
    • G05F3/10Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/205Substrate bias-voltage generators
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by G11C11/00
    • G11C5/14Power supply arrangements, e.g. Power down/chip (de)selection, layout of wiring/power grids, multiple supply levels
    • G11C5/145Applications of charge pumps ; Boosted voltage circuits ; Clamp circuits therefor
    • G11C5/146Substrate bias generators
JP54103994A 1979-08-17 1979-08-17 Expired JPH0152906B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54103994A JPH0152906B2 (en) 1979-08-17 1979-08-17

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP54103994A JPH0152906B2 (en) 1979-08-17 1979-08-17
DE19803030654 DE3030654C2 (en) 1979-08-17 1980-08-13

Publications (2)

Publication Number Publication Date
JPS5627952A JPS5627952A (en) 1981-03-18
JPH0152906B2 true JPH0152906B2 (en) 1989-11-10

Family

ID=14368844

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54103994A Expired JPH0152906B2 (en) 1979-08-17 1979-08-17

Country Status (2)

Country Link
JP (1) JPH0152906B2 (en)
DE (1) DE3030654C2 (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0230187B2 (en) * 1980-03-12 1990-07-04 Mitsubishi Electric Corp
US4460835A (en) * 1980-05-13 1984-07-17 Tokyo Shibaura Denki Kabushiki Kaisha Semiconductor integrated circuit device with low power consumption in a standby mode using an on-chip substrate bias generator
JPS632151B2 (en) * 1981-12-17 1988-01-18 Mitsubishi Electric Corp
JPS58153294A (en) * 1982-03-04 1983-09-12 Mitsubishi Electric Corp Semiconductor storage device
JPH0363827B2 (en) * 1985-01-16 1991-10-02 Fujitsu Ltd
JPS6216556A (en) * 1985-07-15 1987-01-24 Toshiba Corp Substrate bias generation circuit
JPS6216557A (en) * 1985-07-15 1987-01-24 Toshiba Corp Substrate bias generation circuit
JPS6441519A (en) * 1987-08-07 1989-02-13 Mitsubishi Electric Corp Semiconductor integrated circuit
FR2629639B1 (en) * 1988-04-01 1991-01-04 Balkanski Minko
KR910007740B1 (en) * 1989-05-02 1991-09-30 김광호 Power voltage tracking circuit for bit line stabilization
US5272676A (en) * 1990-11-20 1993-12-21 Hitachi, Ltd. Semiconductor integrated circuit device
JP2736483B2 (en) * 1992-03-03 1998-04-02 三菱電機株式会社 Voltage generator

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148492A (en) * 1978-05-15 1979-11-20 Nec Corp Integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4142114A (en) * 1977-07-18 1979-02-27 Mostek Corporation Integrated circuit with threshold regulation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS54148492A (en) * 1978-05-15 1979-11-20 Nec Corp Integrated circuit

Also Published As

Publication number Publication date
JPS5627952A (en) 1981-03-18
DE3030654C2 (en) 1992-04-23
DE3030654A1 (en) 1981-03-26

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