JPH0142134B2 - - Google Patents

Info

Publication number
JPH0142134B2
JPH0142134B2 JP55184184A JP18418480A JPH0142134B2 JP H0142134 B2 JPH0142134 B2 JP H0142134B2 JP 55184184 A JP55184184 A JP 55184184A JP 18418480 A JP18418480 A JP 18418480A JP H0142134 B2 JPH0142134 B2 JP H0142134B2
Authority
JP
Japan
Prior art keywords
mask
photoresist
ray lithography
manufacturing
ray
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55184184A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5694351A (en
Inventor
Deriku Batsukuree Daburyuu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Biosystems Inc
Original Assignee
Perkin Elmer Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Perkin Elmer Corp filed Critical Perkin Elmer Corp
Publication of JPS5694351A publication Critical patent/JPS5694351A/ja
Publication of JPH0142134B2 publication Critical patent/JPH0142134B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)
JP18418480A 1979-12-26 1980-12-26 Mask for xxray lithograph and production thereof Granted JPS5694351A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/107,749 US4329410A (en) 1979-12-26 1979-12-26 Production of X-ray lithograph masks

Publications (2)

Publication Number Publication Date
JPS5694351A JPS5694351A (en) 1981-07-30
JPH0142134B2 true JPH0142134B2 (en, 2012) 1989-09-11

Family

ID=22318258

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18418480A Granted JPS5694351A (en) 1979-12-26 1980-12-26 Mask for xxray lithograph and production thereof

Country Status (3)

Country Link
US (1) US4329410A (en, 2012)
JP (1) JPS5694351A (en, 2012)
DE (1) DE3045964A1 (en, 2012)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4463074A (en) * 1980-10-14 1984-07-31 Eastman Kodak Company Elements containing ordered wall arrays
JPS6057217B2 (ja) * 1980-11-18 1985-12-13 セイコーエプソン株式会社 Ｘ線露光用マスク
DE3119682A1 (de) * 1981-05-18 1982-12-02 Philips Patentverwaltung Gmbh, 2000 Hamburg "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie"
US4664996A (en) * 1983-06-24 1987-05-12 Rca Corporation Method for etching a flat apertured mask for use in a cathode-ray tube
US4656107A (en) * 1983-06-24 1987-04-07 Rca Corporation Photographic printing plate for use in a vacuum printing frame
US4588676A (en) * 1983-06-24 1986-05-13 Rca Corporation Photoexposing a photoresist-coated sheet in a vacuum printing frame
DE3604917A1 (de) * 1986-02-17 1987-08-27 Messerschmitt Boelkow Blohm Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen
US5178975A (en) * 1991-01-25 1993-01-12 International Business Machines Corporation High resolution X-ray mask having high aspect ratio absorber patterns
US5307394A (en) * 1993-01-27 1994-04-26 Oleg Sokolov Device for producing X-ray images on objects composed of photo or X-ray sensitive materials
US6528934B1 (en) 2000-05-30 2003-03-04 Chunghwa Picture Tubes Ltd. Beam forming region for electron gun
WO2002065480A1 (en) * 2001-02-01 2002-08-22 Creatv Microtech, Inc. tNTI-SCATTER GRIDS AND COLLIMATOR DESIGNS, AND THEIR MOTION, FABRICATION AND ASSEMBLY
US7922923B2 (en) 2001-02-01 2011-04-12 Creatv Microtech, Inc. Anti-scatter grid and collimator designs, and their motion, fabrication and assembly
KR100542464B1 (ko) * 2003-11-20 2006-01-11 학교법인 한양학원 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법
SG124407A1 (en) * 2005-02-03 2006-08-30 Asml Netherlands Bv Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus
EP1855127A1 (en) * 2006-05-12 2007-11-14 Rolic AG Optically effective surface relief microstructures and method of making them
RU2350994C1 (ru) * 2007-05-28 2009-03-27 Институт ядерной физики СО РАН Способ проведения теневой трафаретной рентгенолитографии

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2702243A (en) * 1950-06-17 1955-02-15 Azoplate Corp Light-sensitive photographic element and process of producing printing plates
US3313626A (en) * 1962-08-01 1967-04-11 Russeli H Whitney Process of making a lithographic printing plate
US3317320A (en) * 1964-01-02 1967-05-02 Bendix Corp Duo resist process
US3423205A (en) * 1964-10-30 1969-01-21 Bunker Ramo Method of making thin-film circuits
US3743842A (en) * 1972-01-14 1973-07-03 Massachusetts Inst Technology Soft x-ray lithographic apparatus and process
BG17215A1 (en, 2012) * 1972-07-17 1973-07-25
US3971860A (en) * 1973-05-07 1976-07-27 International Business Machines Corporation Method for making device for high resolution electron beam fabrication
JPS50113171A (en, 2012) * 1974-02-13 1975-09-05
US4035522A (en) * 1974-07-19 1977-07-12 International Business Machines Corporation X-ray lithography mask
US4018938A (en) * 1975-06-30 1977-04-19 International Business Machines Corporation Fabrication of high aspect ratio masks
US4022927A (en) * 1975-06-30 1977-05-10 International Business Machines Corporation Methods for forming thick self-supporting masks
JPS5819127B2 (ja) * 1976-03-31 1983-04-16 富士通株式会社 微細パタ−ン形成方法
US4123272A (en) * 1977-05-17 1978-10-31 E. I. Du Pont De Nemours And Company Double-negative positive-working photohardenable elements
JPS5492061A (en) * 1977-12-29 1979-07-20 Fujitsu Ltd Micropattern forming method
US4211834A (en) * 1977-12-30 1980-07-08 International Business Machines Corporation Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask
US4260670A (en) * 1979-07-12 1981-04-07 Western Electric Company, Inc. X-ray mask

Also Published As

Publication number Publication date
DE3045964A1 (de) 1981-09-03
US4329410A (en) 1982-05-11
DE3045964C2 (en, 2012) 1990-05-03
JPS5694351A (en) 1981-07-30

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