DE3045964A1 - Roentgenlithographische maske und verfahren zu ihrer herstellung - Google Patents
Roentgenlithographische maske und verfahren zu ihrer herstellungInfo
- Publication number
- DE3045964A1 DE3045964A1 DE19803045964 DE3045964A DE3045964A1 DE 3045964 A1 DE3045964 A1 DE 3045964A1 DE 19803045964 DE19803045964 DE 19803045964 DE 3045964 A DE3045964 A DE 3045964A DE 3045964 A1 DE3045964 A1 DE 3045964A1
- Authority
- DE
- Germany
- Prior art keywords
- membrane
- mask
- ray
- photoresist material
- photoresist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000000463 material Substances 0.000 claims description 49
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 230000005855 radiation Effects 0.000 claims description 28
- 239000012528 membrane Substances 0.000 claims description 26
- 238000010894 electron beam technology Methods 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 17
- 239000002184 metal Substances 0.000 claims description 17
- 238000001015 X-ray lithography Methods 0.000 claims description 11
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 9
- 229910052737 gold Inorganic materials 0.000 claims description 9
- 239000010931 gold Substances 0.000 claims description 9
- 230000002745 absorbent Effects 0.000 claims description 4
- 239000002250 absorbent Substances 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 claims 5
- 239000011358 absorbing material Substances 0.000 claims 3
- 238000005530 etching Methods 0.000 claims 1
- 238000001459 lithography Methods 0.000 claims 1
- 238000001228 spectrum Methods 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
- 239000010409 thin film Substances 0.000 claims 1
- 239000006096 absorbing agent Substances 0.000 description 22
- 238000000151 deposition Methods 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000000609 electron-beam lithography Methods 0.000 description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- LWOXJAMHQRLYRT-UHFFFAOYSA-N CCC=C=S=O Chemical compound CCC=C=S=O LWOXJAMHQRLYRT-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 238000002083 X-ray spectrum Methods 0.000 description 1
- DZZDTRZOOBJSSG-UHFFFAOYSA-N [Ta].[W] Chemical compound [Ta].[W] DZZDTRZOOBJSSG-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- HDLKRBKBZRWMHV-UHFFFAOYSA-N copper hafnium Chemical compound [Cu].[Hf] HDLKRBKBZRWMHV-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000001803 electron scattering Methods 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Analysing Materials By The Use Of Radiation (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US06/107,749 US4329410A (en) | 1979-12-26 | 1979-12-26 | Production of X-ray lithograph masks |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE3045964A1 true DE3045964A1 (de) | 1981-09-03 |
| DE3045964C2 DE3045964C2 (en, 2012) | 1990-05-03 |
Family
ID=22318258
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19803045964 Granted DE3045964A1 (de) | 1979-12-26 | 1980-12-05 | Roentgenlithographische maske und verfahren zu ihrer herstellung |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4329410A (en, 2012) |
| JP (1) | JPS5694351A (en, 2012) |
| DE (1) | DE3045964A1 (en, 2012) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4463074A (en) * | 1980-10-14 | 1984-07-31 | Eastman Kodak Company | Elements containing ordered wall arrays |
| JPS6057217B2 (ja) * | 1980-11-18 | 1985-12-13 | セイコーエプソン株式会社 | Ｘ線露光用マスク |
| DE3119682A1 (de) * | 1981-05-18 | 1982-12-02 | Philips Patentverwaltung Gmbh, 2000 Hamburg | "verfahren zur herstellung einer maske fuer die mustererzeugung in lackschichten mittels strahlungslithographie" |
| US4664996A (en) * | 1983-06-24 | 1987-05-12 | Rca Corporation | Method for etching a flat apertured mask for use in a cathode-ray tube |
| US4656107A (en) * | 1983-06-24 | 1987-04-07 | Rca Corporation | Photographic printing plate for use in a vacuum printing frame |
| US4588676A (en) * | 1983-06-24 | 1986-05-13 | Rca Corporation | Photoexposing a photoresist-coated sheet in a vacuum printing frame |
| US5178975A (en) * | 1991-01-25 | 1993-01-12 | International Business Machines Corporation | High resolution X-ray mask having high aspect ratio absorber patterns |
| US5307394A (en) * | 1993-01-27 | 1994-04-26 | Oleg Sokolov | Device for producing X-ray images on objects composed of photo or X-ray sensitive materials |
| US6528934B1 (en) | 2000-05-30 | 2003-03-04 | Chunghwa Picture Tubes Ltd. | Beam forming region for electron gun |
| WO2002065480A1 (en) * | 2001-02-01 | 2002-08-22 | Creatv Microtech, Inc. | tNTI-SCATTER GRIDS AND COLLIMATOR DESIGNS, AND THEIR MOTION, FABRICATION AND ASSEMBLY |
| US7922923B2 (en) | 2001-02-01 | 2011-04-12 | Creatv Microtech, Inc. | Anti-scatter grid and collimator designs, and their motion, fabrication and assembly |
| KR100542464B1 (ko) * | 2003-11-20 | 2006-01-11 | 학교법인 한양학원 | 원자력간 현미경 리소그래피 기술을 이용한 극자외선 노광공정용 반사형 다층 박막 미러의 제조방법 |
| SG124407A1 (en) * | 2005-02-03 | 2006-08-30 | Asml Netherlands Bv | Method of generating a photolithography patterningdevice, computer program, patterning device, meth od of determining the position of a target image on or proximate a substrate, measurement device, and lithographic apparatus |
| EP1855127A1 (en) * | 2006-05-12 | 2007-11-14 | Rolic AG | Optically effective surface relief microstructures and method of making them |
| RU2350994C1 (ru) * | 2007-05-28 | 2009-03-27 | Институт ядерной физики СО РАН | Способ проведения теневой трафаретной рентгенолитографии |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1384037A (en) * | 1972-07-17 | 1975-02-19 | Zlafop Pri Ban | Photomasks |
| DE2628099A1 (de) * | 1975-06-30 | 1977-02-03 | Ibm | Verfahren zum herstellen einer maske |
| US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2702243A (en) * | 1950-06-17 | 1955-02-15 | Azoplate Corp | Light-sensitive photographic element and process of producing printing plates |
| US3313626A (en) * | 1962-08-01 | 1967-04-11 | Russeli H Whitney | Process of making a lithographic printing plate |
| US3317320A (en) * | 1964-01-02 | 1967-05-02 | Bendix Corp | Duo resist process |
| US3423205A (en) * | 1964-10-30 | 1969-01-21 | Bunker Ramo | Method of making thin-film circuits |
| US3743842A (en) * | 1972-01-14 | 1973-07-03 | Massachusetts Inst Technology | Soft x-ray lithographic apparatus and process |
| US3971860A (en) * | 1973-05-07 | 1976-07-27 | International Business Machines Corporation | Method for making device for high resolution electron beam fabrication |
| JPS50113171A (en, 2012) * | 1974-02-13 | 1975-09-05 | ||
| US4022927A (en) * | 1975-06-30 | 1977-05-10 | International Business Machines Corporation | Methods for forming thick self-supporting masks |
| JPS5819127B2 (ja) * | 1976-03-31 | 1983-04-16 | 富士通株式会社 | 微細パタ−ン形成方法 |
| US4123272A (en) * | 1977-05-17 | 1978-10-31 | E. I. Du Pont De Nemours And Company | Double-negative positive-working photohardenable elements |
| JPS5492061A (en) * | 1977-12-29 | 1979-07-20 | Fujitsu Ltd | Micropattern forming method |
| US4211834A (en) * | 1977-12-30 | 1980-07-08 | International Business Machines Corporation | Method of using a o-quinone diazide sensitized phenol-formaldehyde resist as a deep ultraviolet light exposure mask |
| US4260670A (en) * | 1979-07-12 | 1981-04-07 | Western Electric Company, Inc. | X-ray mask |
-
1979
- 1979-12-26 US US06/107,749 patent/US4329410A/en not_active Expired - Lifetime
-
1980
- 1980-12-05 DE DE19803045964 patent/DE3045964A1/de active Granted
- 1980-12-26 JP JP18418480A patent/JPS5694351A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1384037A (en) * | 1972-07-17 | 1975-02-19 | Zlafop Pri Ban | Photomasks |
| US4035522A (en) * | 1974-07-19 | 1977-07-12 | International Business Machines Corporation | X-ray lithography mask |
| DE2628099A1 (de) * | 1975-06-30 | 1977-02-03 | Ibm | Verfahren zum herstellen einer maske |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3604917A1 (de) * | 1986-02-17 | 1987-08-27 | Messerschmitt Boelkow Blohm | Verfahren zur herstellung eines integrierten verbandes in reihe geschalteter duennschicht-solarzellen |
Also Published As
| Publication number | Publication date |
|---|---|
| US4329410A (en) | 1982-05-11 |
| JPH0142134B2 (en, 2012) | 1989-09-11 |
| DE3045964C2 (en, 2012) | 1990-05-03 |
| JPS5694351A (en) | 1981-07-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| D2 | Grant after examination | ||
| 8364 | No opposition during term of opposition | ||
| 8339 | Ceased/non-payment of the annual fee |