JPH0117254B2 - - Google Patents

Info

Publication number
JPH0117254B2
JPH0117254B2 JP56148092A JP14809281A JPH0117254B2 JP H0117254 B2 JPH0117254 B2 JP H0117254B2 JP 56148092 A JP56148092 A JP 56148092A JP 14809281 A JP14809281 A JP 14809281A JP H0117254 B2 JPH0117254 B2 JP H0117254B2
Authority
JP
Japan
Prior art keywords
film
polyacetylene
polyimide film
wiring
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP56148092A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5848940A (ja
Inventor
Nobuo Sasaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP56148092A priority Critical patent/JPS5848940A/ja
Priority to DE8282304904T priority patent/DE3277759D1/de
Priority to EP82304904A priority patent/EP0075454B1/en
Publication of JPS5848940A publication Critical patent/JPS5848940A/ja
Priority to US07/008,139 priority patent/US4761677A/en
Publication of JPH0117254B2 publication Critical patent/JPH0117254B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10W20/01

Landscapes

  • Formation Of Insulating Films (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP56148092A 1981-09-18 1981-09-18 半導体装置の製造方法 Granted JPS5848940A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP56148092A JPS5848940A (ja) 1981-09-18 1981-09-18 半導体装置の製造方法
DE8282304904T DE3277759D1 (en) 1981-09-18 1982-09-17 Semiconductor device having new conductive interconnection structure and method for manufacturing the same
EP82304904A EP0075454B1 (en) 1981-09-18 1982-09-17 Semiconductor device having new conductive interconnection structure and method for manufacturing the same
US07/008,139 US4761677A (en) 1981-09-18 1987-01-22 Semiconductor device having new conductive interconnection structure and method for manufacturing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP56148092A JPS5848940A (ja) 1981-09-18 1981-09-18 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS5848940A JPS5848940A (ja) 1983-03-23
JPH0117254B2 true JPH0117254B2 (enExample) 1989-03-29

Family

ID=15445054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP56148092A Granted JPS5848940A (ja) 1981-09-18 1981-09-18 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS5848940A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6746770B1 (en) * 1989-05-26 2004-06-08 Internatonal Business Machines Corporation Electrically conductive and abrasion/scratch resistant polymeric materials, method of fabrication thereof and uses thereof
US6331356B1 (en) 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
JPH0630820U (ja) * 1992-09-16 1994-04-22 日信工業株式会社 回動レバーの取付け構造
CN1170321C (zh) * 1996-11-12 2004-10-06 国际商业机器公司 导电聚合物图形及其作为电极或电接触的应用

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5351985A (en) * 1976-10-22 1978-05-11 Hitachi Ltd Semiconductor wiring constitution

Also Published As

Publication number Publication date
JPS5848940A (ja) 1983-03-23

Similar Documents

Publication Publication Date Title
JPS61214555A (ja) 半導体装置
TW385523B (en) Method for making contact via with a formed component on semiconductor substrate
JPH0117254B2 (enExample)
JP2000252277A (ja) 半導体装置の製法
JPS6240746A (ja) 半導体装置
JPS6211781B2 (enExample)
JPS6266679A (ja) 半導体装置の製造方法
JPH039572A (ja) 半導体装置の製造方法
JPS603779B2 (ja) 半導体装置の製造方法
JPH0419707B2 (enExample)
JPS61228661A (ja) 半導体装置及びその製造方法
JPH04349629A (ja) 半導体装置及びその製造方法
JPH0379864B2 (enExample)
JPH0642481B2 (ja) 半導体装置の製法
JPS62154643A (ja) 半導体装置の製造方法
JPS6160580B2 (enExample)
JPS61100936A (ja) 半導体装置の製造方法
JPS62213141A (ja) 半導体装置の製造方法
JPS62165328A (ja) 酸化後の金属合金化方法
JPH04112533A (ja) 半導体装置用多重配線層およびその製造方法
JPS5933873A (ja) 半導体素子の製造方法
JPH03209823A (ja) 樹脂封止型半導体装置
JPS61225838A (ja) 電極配線の形成方法
JPH01298758A (ja) 半導体装置の製造方法
KR100216730B1 (ko) 반도체 금속막 식각공정