JPH0113216B2 - - Google Patents
Info
- Publication number
- JPH0113216B2 JPH0113216B2 JP7055580A JP7055580A JPH0113216B2 JP H0113216 B2 JPH0113216 B2 JP H0113216B2 JP 7055580 A JP7055580 A JP 7055580A JP 7055580 A JP7055580 A JP 7055580A JP H0113216 B2 JPH0113216 B2 JP H0113216B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- base
- emitter
- insulating film
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 8
- 238000009792 diffusion process Methods 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 4
- 230000007547 defect Effects 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7055580A JPS5723220A (en) | 1980-05-26 | 1980-05-26 | Formation of multilayer electrode for semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7055580A JPS5723220A (en) | 1980-05-26 | 1980-05-26 | Formation of multilayer electrode for semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5723220A JPS5723220A (en) | 1982-02-06 |
| JPH0113216B2 true JPH0113216B2 (en, 2012) | 1989-03-03 |
Family
ID=13434881
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7055580A Granted JPS5723220A (en) | 1980-05-26 | 1980-05-26 | Formation of multilayer electrode for semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5723220A (en, 2012) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04145210A (ja) * | 1990-12-15 | 1992-05-19 | Aoyama Seisakusho:Kk | ワッシャ組込みボルトの製造法 |
-
1980
- 1980-05-26 JP JP7055580A patent/JPS5723220A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5723220A (en) | 1982-02-06 |
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