JPH0117248B2 - - Google Patents

Info

Publication number
JPH0117248B2
JPH0117248B2 JP55069129A JP6912980A JPH0117248B2 JP H0117248 B2 JPH0117248 B2 JP H0117248B2 JP 55069129 A JP55069129 A JP 55069129A JP 6912980 A JP6912980 A JP 6912980A JP H0117248 B2 JPH0117248 B2 JP H0117248B2
Authority
JP
Japan
Prior art keywords
insulating film
electrode
contact hole
etching
forming
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55069129A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56165320A (en
Inventor
Tadahiko Tanaka
Takeshi Oomukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP6912980A priority Critical patent/JPS56165320A/ja
Publication of JPS56165320A publication Critical patent/JPS56165320A/ja
Publication of JPH0117248B2 publication Critical patent/JPH0117248B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP6912980A 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device Granted JPS56165320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6912980A JPS56165320A (en) 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6912980A JPS56165320A (en) 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56165320A JPS56165320A (en) 1981-12-18
JPH0117248B2 true JPH0117248B2 (en, 2012) 1989-03-29

Family

ID=13393715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6912980A Granted JPS56165320A (en) 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165320A (en, 2012)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107635A (ja) * 1981-12-21 1983-06-27 Nec Corp 半導体装置の製造方法
KR950012918B1 (ko) * 1991-10-21 1995-10-23 현대전자산업주식회사 선택적 텅스텐 박막의 2단계 퇴적에 의한 콘택 매립방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5846850B2 (ja) * 1977-04-13 1983-10-19 三菱電機株式会社 寸法選別方法
JPS5740576Y2 (en, 2012) * 1978-02-17 1982-09-06

Also Published As

Publication number Publication date
JPS56165320A (en) 1981-12-18

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