JPS56165320A - Formation of multilayer electrodes of semiconductor device - Google Patents

Formation of multilayer electrodes of semiconductor device

Info

Publication number
JPS56165320A
JPS56165320A JP6912980A JP6912980A JPS56165320A JP S56165320 A JPS56165320 A JP S56165320A JP 6912980 A JP6912980 A JP 6912980A JP 6912980 A JP6912980 A JP 6912980A JP S56165320 A JPS56165320 A JP S56165320A
Authority
JP
Japan
Prior art keywords
electrodes
insulating film
semiconductor device
contact holes
ohmic electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6912980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0117248B2 (en, 2012
Inventor
Tadahiko Tanaka
Takeshi Omukae
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Original Assignee
Tokyo Sanyo Electric Co Ltd
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Sanyo Electric Co Ltd, Sanyo Electric Co Ltd filed Critical Tokyo Sanyo Electric Co Ltd
Priority to JP6912980A priority Critical patent/JPS56165320A/ja
Publication of JPS56165320A publication Critical patent/JPS56165320A/ja
Publication of JPH0117248B2 publication Critical patent/JPH0117248B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Weting (AREA)
JP6912980A 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device Granted JPS56165320A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP6912980A JPS56165320A (en) 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP6912980A JPS56165320A (en) 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device

Publications (2)

Publication Number Publication Date
JPS56165320A true JPS56165320A (en) 1981-12-18
JPH0117248B2 JPH0117248B2 (en, 2012) 1989-03-29

Family

ID=13393715

Family Applications (1)

Application Number Title Priority Date Filing Date
JP6912980A Granted JPS56165320A (en) 1980-05-23 1980-05-23 Formation of multilayer electrodes of semiconductor device

Country Status (1)

Country Link
JP (1) JPS56165320A (en, 2012)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107635A (ja) * 1981-12-21 1983-06-27 Nec Corp 半導体装置の製造方法
US5683938A (en) * 1991-10-21 1997-11-04 Hyundai Electronics Industries Co., Ltd. Method for filling contact holes with metal by two-step deposition

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127268A (en) * 1977-04-13 1978-11-07 Mitsubishi Electric Corp Size selection method
JPS54124449U (en, 2012) * 1978-02-17 1979-08-31

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53127268A (en) * 1977-04-13 1978-11-07 Mitsubishi Electric Corp Size selection method
JPS54124449U (en, 2012) * 1978-02-17 1979-08-31

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58107635A (ja) * 1981-12-21 1983-06-27 Nec Corp 半導体装置の製造方法
US5683938A (en) * 1991-10-21 1997-11-04 Hyundai Electronics Industries Co., Ltd. Method for filling contact holes with metal by two-step deposition

Also Published As

Publication number Publication date
JPH0117248B2 (en, 2012) 1989-03-29

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