JPH01129250A - ポジ型フォトレジスト用現像液 - Google Patents
ポジ型フォトレジスト用現像液Info
- Publication number
- JPH01129250A JPH01129250A JP28736987A JP28736987A JPH01129250A JP H01129250 A JPH01129250 A JP H01129250A JP 28736987 A JP28736987 A JP 28736987A JP 28736987 A JP28736987 A JP 28736987A JP H01129250 A JPH01129250 A JP H01129250A
- Authority
- JP
- Japan
- Prior art keywords
- quaternary ammonium
- formula
- nonionic surfactant
- positive photoresist
- resist
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 229920002120 photoresistant polymer Polymers 0.000 title claims description 20
- 239000002736 nonionic surfactant Substances 0.000 claims abstract description 43
- 229920001983 poloxamer Polymers 0.000 claims abstract description 21
- 239000003093 cationic surfactant Substances 0.000 claims abstract description 20
- IAYPIBMASNFSPL-UHFFFAOYSA-N Ethylene oxide Chemical compound C1CO1 IAYPIBMASNFSPL-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000000908 ammonium hydroxide Substances 0.000 claims abstract description 9
- 229920002359 Tetronic® Polymers 0.000 claims abstract description 7
- 229920001451 polypropylene glycol Polymers 0.000 claims abstract 2
- 125000001453 quaternary ammonium group Chemical group 0.000 claims description 18
- 239000007864 aqueous solution Substances 0.000 claims description 14
- 125000000217 alkyl group Chemical group 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 150000003856 quaternary ammonium compounds Chemical class 0.000 claims description 8
- 239000000243 solution Substances 0.000 claims description 5
- 239000002253 acid Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 2
- 239000001257 hydrogen Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims 7
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims 3
- 125000005189 alkyl hydroxy group Chemical group 0.000 claims 1
- 125000005010 perfluoroalkyl group Chemical group 0.000 claims 1
- 238000004090 dissolution Methods 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 13
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract description 3
- PUAQLLVFLMYYJJ-UHFFFAOYSA-N 2-aminopropiophenone Chemical compound CC(N)C(=O)C1=CC=CC=C1 PUAQLLVFLMYYJJ-UHFFFAOYSA-N 0.000 abstract 6
- QGZKDVFQNNGYKY-UHFFFAOYSA-O Ammonium Chemical compound [NH4+] QGZKDVFQNNGYKY-UHFFFAOYSA-O 0.000 abstract 4
- 230000002950 deficient Effects 0.000 abstract 2
- 239000006260 foam Substances 0.000 abstract 1
- 230000000052 comparative effect Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000007423 decrease Effects 0.000 description 7
- OEYIOHPDSNJKLS-UHFFFAOYSA-N choline Chemical compound C[N+](C)(C)CCO OEYIOHPDSNJKLS-UHFFFAOYSA-N 0.000 description 5
- 229960001231 choline Drugs 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 238000011156 evaluation Methods 0.000 description 5
- 238000005187 foaming Methods 0.000 description 5
- 230000009467 reduction Effects 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 3
- 239000000654 additive Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 3
- 230000010354 integration Effects 0.000 description 3
- -1 naphthoquinone diazide compound Chemical class 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 2
- 239000002585 base Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003960 organic solvent Substances 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- FSJQUYQAQKLXGK-UHFFFAOYSA-N 2,2-dihydroxyethyl(dimethyl)azanium;hydroxide Chemical compound [OH-].C[NH+](C)CC(O)O FSJQUYQAQKLXGK-UHFFFAOYSA-N 0.000 description 1
- GAEXIJRVTSSOBA-UHFFFAOYSA-N 2,2-dihydroxyethyl-dodecyl-methylazanium;chloride Chemical group [Cl-].CCCCCCCCCCCC[NH+](C)CC(O)O GAEXIJRVTSSOBA-UHFFFAOYSA-N 0.000 description 1
- KIZQNNOULOCVDM-UHFFFAOYSA-M 2-hydroxyethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].C[N+](C)(C)CCO KIZQNNOULOCVDM-UHFFFAOYSA-M 0.000 description 1
- 241000251468 Actinopterygii Species 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical group N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000004743 Polypropylene Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- CYDRXTMLKJDRQH-UHFFFAOYSA-N benzododecinium Chemical compound CCCCCCCCCCCC[N+](C)(C)CC1=CC=CC=C1 CYDRXTMLKJDRQH-UHFFFAOYSA-N 0.000 description 1
- 125000005586 carbonic acid group Chemical group 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KVFVBPYVNUCWJX-UHFFFAOYSA-M ethyl(trimethyl)azanium;hydroxide Chemical compound [OH-].CC[N+](C)(C)C KVFVBPYVNUCWJX-UHFFFAOYSA-M 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 239000002563 ionic surfactant Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- OQNCIVCOTSERAJ-UHFFFAOYSA-N methyl(2,2,2-trihydroxyethyl)azanium;hydroxide Chemical compound [OH-].C[NH2+]CC(O)(O)O OQNCIVCOTSERAJ-UHFFFAOYSA-N 0.000 description 1
- 229920003986 novolac Polymers 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229940051841 polyoxyethylene ether Drugs 0.000 description 1
- 229920000056 polyoxyethylene ether Polymers 0.000 description 1
- 229920001155 polypropylene Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229940073455 tetraethylammonium hydroxide Drugs 0.000 description 1
- LRGJRHZIDJQFCL-UHFFFAOYSA-M tetraethylazanium;hydroxide Chemical compound [OH-].CC[N+](CC)(CC)CC LRGJRHZIDJQFCL-UHFFFAOYSA-M 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/30—Imagewise removal using liquid means
- G03F7/32—Liquid compositions therefor, e.g. developers
- G03F7/322—Aqueous alkaline compositions
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28736987A JPH01129250A (ja) | 1987-11-16 | 1987-11-16 | ポジ型フォトレジスト用現像液 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28736987A JPH01129250A (ja) | 1987-11-16 | 1987-11-16 | ポジ型フォトレジスト用現像液 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH01129250A true JPH01129250A (ja) | 1989-05-22 |
| JPH0451821B2 JPH0451821B2 (enrdf_load_stackoverflow) | 1992-08-20 |
Family
ID=17716470
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28736987A Granted JPH01129250A (ja) | 1987-11-16 | 1987-11-16 | ポジ型フォトレジスト用現像液 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01129250A (enrdf_load_stackoverflow) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01257846A (ja) * | 1988-04-07 | 1989-10-13 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト用現像液 |
| JPH01287561A (ja) * | 1988-05-13 | 1989-11-20 | Konica Corp | 感光性平版印刷版の現像液組成物 |
| JPH0643631A (ja) * | 1992-04-01 | 1994-02-18 | Internatl Business Mach Corp <Ibm> | 非イオン性ポリグリコールを含有するフォトレジスト |
| US6007970A (en) * | 1992-02-07 | 1999-12-28 | Canon Kabushiki Kaisha | Lithographic developer containing surfactant |
| US6107007A (en) * | 1992-02-10 | 2000-08-22 | Canon Kabushiki Kaisha | Lithography process |
| JP2001312072A (ja) * | 2000-04-28 | 2001-11-09 | Advanced Color Tec Kk | 感光性樹脂用現像液、現像方法、および光学的カラーフィルターの製造方法 |
| US6739544B2 (en) | 2001-03-29 | 2004-05-25 | Sumitomo Heavy Industries, Ltd. | Winding roll presser device and long material winding method |
| WO2008018580A1 (fr) * | 2006-08-10 | 2008-02-14 | Kanto Kagaku Kabushiki Kaisha | Composition liquide de traitement de résine photosensible positive et développeur liquide |
| US7407739B2 (en) | 2002-04-26 | 2008-08-05 | Tokyo Ohka Kogyo Co., Ltd. | Resist developer and resist pattern formation method using same |
| US7416836B2 (en) | 2004-02-05 | 2008-08-26 | Fujifilm Corporation | Developing solution for lithographic printing plate precursor and method for making lithographic printing plate |
| CN112143500A (zh) * | 2019-06-28 | 2020-12-29 | 东京应化工业株式会社 | 硅蚀刻液、硅蚀刻方法以及硅鳍片结构体的制造方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1124285A (ja) * | 1997-06-27 | 1999-01-29 | Kurarianto Japan Kk | レジスト用現像液 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118944A (ja) * | 1984-05-16 | 1986-01-27 | アライド・コ−ポレ−シヨン | 低金属イオンホトレジスト現像液 |
| JPS61151537A (ja) * | 1984-12-25 | 1986-07-10 | Toshiba Corp | ポジ型フオトレジスト現像液組成物 |
| JPS61167948A (ja) * | 1985-01-21 | 1986-07-29 | Mitsubishi Chem Ind Ltd | ポジ型感光性組成物用現像液 |
-
1987
- 1987-11-16 JP JP28736987A patent/JPH01129250A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6118944A (ja) * | 1984-05-16 | 1986-01-27 | アライド・コ−ポレ−シヨン | 低金属イオンホトレジスト現像液 |
| JPS61151537A (ja) * | 1984-12-25 | 1986-07-10 | Toshiba Corp | ポジ型フオトレジスト現像液組成物 |
| JPS61167948A (ja) * | 1985-01-21 | 1986-07-29 | Mitsubishi Chem Ind Ltd | ポジ型感光性組成物用現像液 |
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01257846A (ja) * | 1988-04-07 | 1989-10-13 | Fuji Photo Film Co Ltd | ポジ型フオトレジスト用現像液 |
| JPH01287561A (ja) * | 1988-05-13 | 1989-11-20 | Konica Corp | 感光性平版印刷版の現像液組成物 |
| US6007970A (en) * | 1992-02-07 | 1999-12-28 | Canon Kabushiki Kaisha | Lithographic developer containing surfactant |
| US6107007A (en) * | 1992-02-10 | 2000-08-22 | Canon Kabushiki Kaisha | Lithography process |
| JPH0643631A (ja) * | 1992-04-01 | 1994-02-18 | Internatl Business Mach Corp <Ibm> | 非イオン性ポリグリコールを含有するフォトレジスト |
| JP2001312072A (ja) * | 2000-04-28 | 2001-11-09 | Advanced Color Tec Kk | 感光性樹脂用現像液、現像方法、および光学的カラーフィルターの製造方法 |
| US6739544B2 (en) | 2001-03-29 | 2004-05-25 | Sumitomo Heavy Industries, Ltd. | Winding roll presser device and long material winding method |
| DE10213841B4 (de) * | 2001-03-29 | 2008-11-27 | Sumitomo Heavy Industries, Ltd. | Wickelrollenanpressvorrichtung zum Aufwickeln von langen Materialien |
| US7407739B2 (en) | 2002-04-26 | 2008-08-05 | Tokyo Ohka Kogyo Co., Ltd. | Resist developer and resist pattern formation method using same |
| US7416836B2 (en) | 2004-02-05 | 2008-08-26 | Fujifilm Corporation | Developing solution for lithographic printing plate precursor and method for making lithographic printing plate |
| WO2008018580A1 (fr) * | 2006-08-10 | 2008-02-14 | Kanto Kagaku Kabushiki Kaisha | Composition liquide de traitement de résine photosensible positive et développeur liquide |
| US8323880B2 (en) | 2006-08-10 | 2012-12-04 | Kanto Kagaku Kabushiki Kaisha | Positive resist processing liquid composition and liquid developer |
| CN112143500A (zh) * | 2019-06-28 | 2020-12-29 | 东京应化工业株式会社 | 硅蚀刻液、硅蚀刻方法以及硅鳍片结构体的制造方法 |
| CN112143500B (zh) * | 2019-06-28 | 2023-04-07 | 东京应化工业株式会社 | 硅蚀刻液、硅蚀刻方法以及硅鳍片结构体的制造方法 |
| US11802240B2 (en) | 2019-06-28 | 2023-10-31 | Tokyo Ohka Kogyo Co., Ltd. | Silicon etching solution, silicon etching method, and method of producing silicon fin structure |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0451821B2 (enrdf_load_stackoverflow) | 1992-08-20 |
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Legal Events
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