JP7744352B2 - エッチング方法 - Google Patents

エッチング方法

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Publication number
JP7744352B2
JP7744352B2 JP2022546240A JP2022546240A JP7744352B2 JP 7744352 B2 JP7744352 B2 JP 7744352B2 JP 2022546240 A JP2022546240 A JP 2022546240A JP 2022546240 A JP2022546240 A JP 2022546240A JP 7744352 B2 JP7744352 B2 JP 7744352B2
Authority
JP
Japan
Prior art keywords
etching
oxide film
oxidizable compound
metal oxide
oxidizing gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2022546240A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2022050099A1 (https=
Inventor
雄太郎 青木
将之 木村
敦史 山下
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of JPWO2022050099A1 publication Critical patent/JPWO2022050099A1/ja
Application granted granted Critical
Publication of JP7744352B2 publication Critical patent/JP7744352B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

Landscapes

  • Drying Of Semiconductors (AREA)
JP2022546240A 2020-09-01 2021-08-23 エッチング方法 Active JP7744352B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020146816 2020-09-01
JP2020146816 2020-09-01
PCT/JP2021/030739 WO2022050099A1 (ja) 2020-09-01 2021-08-23 エッチング方法

Publications (2)

Publication Number Publication Date
JPWO2022050099A1 JPWO2022050099A1 (https=) 2022-03-10
JP7744352B2 true JP7744352B2 (ja) 2025-09-25

Family

ID=80490882

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2022546240A Active JP7744352B2 (ja) 2020-09-01 2021-08-23 エッチング方法

Country Status (6)

Country Link
US (1) US20240030037A1 (https=)
JP (1) JP7744352B2 (https=)
KR (1) KR102949166B1 (https=)
CN (1) CN116210072B (https=)
TW (1) TWI885198B (https=)
WO (1) WO2022050099A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置
JP2016025195A (ja) 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP2016129227A (ja) 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置
WO2020150043A1 (en) 2019-01-15 2020-07-23 Lam Research Corporation Metal atomic layer etch and deposition apparatuses and processes with metal-free ligands
JP2020136602A (ja) 2019-02-25 2020-08-31 株式会社Adeka エッチング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828883B2 (en) 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
CN106548936B (zh) * 2015-09-23 2022-04-22 北京北方华创微电子装备有限公司 一种金属层的刻蚀方法
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
JP6855191B2 (ja) * 2016-08-29 2021-04-07 株式会社Adeka 原子層堆積法による金属薄膜の製造方法
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
JP6501858B2 (ja) * 2017-12-13 2019-04-17 関東化學株式会社 金属酸化物エッチング液組成物およびエッチング方法
WO2019182916A1 (en) * 2018-03-20 2019-09-26 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
SG11202009105YA (en) * 2018-03-20 2020-10-29 Tokyo Electron Ltd Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置
JP2016025195A (ja) 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
JP2016129227A (ja) 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置
WO2020150043A1 (en) 2019-01-15 2020-07-23 Lam Research Corporation Metal atomic layer etch and deposition apparatuses and processes with metal-free ligands
JP2020136602A (ja) 2019-02-25 2020-08-31 株式会社Adeka エッチング方法

Also Published As

Publication number Publication date
KR102949166B1 (ko) 2026-04-06
TWI885198B (zh) 2025-06-01
WO2022050099A1 (ja) 2022-03-10
KR20230057348A (ko) 2023-04-28
CN116210072B (zh) 2025-12-12
JPWO2022050099A1 (https=) 2022-03-10
CN116210072A (zh) 2023-06-02
US20240030037A1 (en) 2024-01-25
TW202224003A (zh) 2022-06-16

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