TWI885198B - 蝕刻方法 - Google Patents

蝕刻方法 Download PDF

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Publication number
TWI885198B
TWI885198B TW110132001A TW110132001A TWI885198B TW I885198 B TWI885198 B TW I885198B TW 110132001 A TW110132001 A TW 110132001A TW 110132001 A TW110132001 A TW 110132001A TW I885198 B TWI885198 B TW I885198B
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TW
Taiwan
Prior art keywords
etching
oxide film
oxidizable compound
metal oxide
oxidizing gas
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TW110132001A
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English (en)
Chinese (zh)
Other versions
TW202224003A (zh
Inventor
青木雄太郎
木村将之
山下敦史
Original Assignee
日商Ａｄｅｋａ股份有限公司
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Publication of TW202224003A publication Critical patent/TW202224003A/zh
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

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  • Drying Of Semiconductors (AREA)
TW110132001A 2020-09-01 2021-08-30 蝕刻方法 TWI885198B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020-146816 2020-09-01
JP2020146816 2020-09-01

Publications (2)

Publication Number Publication Date
TW202224003A TW202224003A (zh) 2022-06-16
TWI885198B true TWI885198B (zh) 2025-06-01

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ID=80490882

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TW110132001A TWI885198B (zh) 2020-09-01 2021-08-30 蝕刻方法

Country Status (6)

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US (1) US20240030037A1 (https=)
JP (1) JP7744352B2 (https=)
KR (1) KR102949166B1 (https=)
CN (1) CN116210072B (https=)
TW (1) TWI885198B (https=)
WO (1) WO2022050099A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106548936A (zh) * 2015-09-23 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 一种金属层的刻蚀方法
US20180047577A1 (en) * 2016-08-10 2018-02-15 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US20190295870A1 (en) * 2018-03-20 2019-09-26 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
US20200083074A1 (en) * 2018-03-20 2020-03-12 Tokyo Electron Limited Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置
US8828883B2 (en) 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
US9431268B2 (en) * 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
JP6855191B2 (ja) * 2016-08-29 2021-04-07 株式会社Adeka 原子層堆積法による金属薄膜の製造方法
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
JP6501858B2 (ja) * 2017-12-13 2019-04-17 関東化學株式会社 金属酸化物エッチング液組成物およびエッチング方法
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理
JP2020136602A (ja) 2019-02-25 2020-08-31 株式会社Adeka エッチング方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106548936A (zh) * 2015-09-23 2017-03-29 北京北方微电子基地设备工艺研究中心有限责任公司 一种金属层的刻蚀方法
US20180047577A1 (en) * 2016-08-10 2018-02-15 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
US20190295870A1 (en) * 2018-03-20 2019-09-26 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
US20200083074A1 (en) * 2018-03-20 2020-03-12 Tokyo Electron Limited Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same

Also Published As

Publication number Publication date
KR102949166B1 (ko) 2026-04-06
WO2022050099A1 (ja) 2022-03-10
KR20230057348A (ko) 2023-04-28
CN116210072B (zh) 2025-12-12
JPWO2022050099A1 (https=) 2022-03-10
CN116210072A (zh) 2023-06-02
JP7744352B2 (ja) 2025-09-25
US20240030037A1 (en) 2024-01-25
TW202224003A (zh) 2022-06-16

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