KR102949166B1 - 에칭 방법 - Google Patents

에칭 방법

Info

Publication number
KR102949166B1
KR102949166B1 KR1020237005410A KR20237005410A KR102949166B1 KR 102949166 B1 KR102949166 B1 KR 102949166B1 KR 1020237005410 A KR1020237005410 A KR 1020237005410A KR 20237005410 A KR20237005410 A KR 20237005410A KR 102949166 B1 KR102949166 B1 KR 102949166B1
Authority
KR
South Korea
Prior art keywords
alcohol
oxide film
etching
gas
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020237005410A
Other languages
English (en)
Korean (ko)
Other versions
KR20230057348A (ko
Inventor
유타로 아오키
마사유키 기무라
아츠시 야마시타
Original Assignee
가부시키가이샤 아데카
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 가부시키가이샤 아데카 filed Critical 가부시키가이샤 아데카
Publication of KR20230057348A publication Critical patent/KR20230057348A/ko
Application granted granted Critical
Publication of KR102949166B1 publication Critical patent/KR102949166B1/ko
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Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

Landscapes

  • Drying Of Semiconductors (AREA)
KR1020237005410A 2020-09-01 2021-08-23 에칭 방법 Active KR102949166B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2020-146816 2020-09-01
JP2020146816 2020-09-01
PCT/JP2021/030739 WO2022050099A1 (ja) 2020-09-01 2021-08-23 エッチング方法

Publications (2)

Publication Number Publication Date
KR20230057348A KR20230057348A (ko) 2023-04-28
KR102949166B1 true KR102949166B1 (ko) 2026-04-06

Family

ID=80490882

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020237005410A Active KR102949166B1 (ko) 2020-09-01 2021-08-23 에칭 방법

Country Status (6)

Country Link
US (1) US20240030037A1 (https=)
JP (1) JP7744352B2 (https=)
KR (1) KR102949166B1 (https=)
CN (1) CN116210072B (https=)
TW (1) TWI885198B (https=)
WO (1) WO2022050099A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置
JP2016129227A (ja) 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置
US20180047577A1 (en) 2016-08-10 2018-02-15 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
JP2020501373A (ja) 2016-12-09 2020-01-16 エーエスエム アイピー ホールディング ビー．ブイ． 熱原子層エッチングプロセス
JP2020136602A (ja) 2019-02-25 2020-08-31 株式会社Adeka エッチング方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828883B2 (en) 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
CN106548936B (zh) * 2015-09-23 2022-04-22 北京北方华创微电子装备有限公司 一种金属层的刻蚀方法
JP6855191B2 (ja) * 2016-08-29 2021-04-07 株式会社Adeka 原子層堆積法による金属薄膜の製造方法
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
JP6501858B2 (ja) * 2017-12-13 2019-04-17 関東化學株式会社 金属酸化物エッチング液組成物およびエッチング方法
WO2019182916A1 (en) * 2018-03-20 2019-09-26 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
SG11202009105YA (en) * 2018-03-20 2020-10-29 Tokyo Electron Ltd Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置
JP2016129227A (ja) 2015-01-05 2016-07-14 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ 酸化物層のエッチング方法及びエッチング装置
US20180047577A1 (en) 2016-08-10 2018-02-15 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
JP2020501373A (ja) 2016-12-09 2020-01-16 エーエスエム アイピー ホールディング ビー．ブイ． 熱原子層エッチングプロセス
JP2020136602A (ja) 2019-02-25 2020-08-31 株式会社Adeka エッチング方法

Also Published As

Publication number Publication date
TWI885198B (zh) 2025-06-01
WO2022050099A1 (ja) 2022-03-10
KR20230057348A (ko) 2023-04-28
CN116210072B (zh) 2025-12-12
JPWO2022050099A1 (https=) 2022-03-10
CN116210072A (zh) 2023-06-02
JP7744352B2 (ja) 2025-09-25
US20240030037A1 (en) 2024-01-25
TW202224003A (zh) 2022-06-16

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