CN116210072B - 蚀刻方法 - Google Patents

蚀刻方法

Info

Publication number
CN116210072B
CN116210072B CN202180053507.1A CN202180053507A CN116210072B CN 116210072 B CN116210072 B CN 116210072B CN 202180053507 A CN202180053507 A CN 202180053507A CN 116210072 B CN116210072 B CN 116210072B
Authority
CN
China
Prior art keywords
oxide film
etching
compound
metal oxide
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202180053507.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN116210072A (zh
Inventor
青木雄太郎
木村将之
山下敦史
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Adeka Corp
Original Assignee
Adeka Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Adeka Corp filed Critical Adeka Corp
Publication of CN116210072A publication Critical patent/CN116210072A/zh
Application granted granted Critical
Publication of CN116210072B publication Critical patent/CN116210072B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3

Landscapes

  • Drying Of Semiconductors (AREA)
CN202180053507.1A 2020-09-01 2021-08-23 蚀刻方法 Active CN116210072B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020-146816 2020-09-01
JP2020146816 2020-09-01
PCT/JP2021/030739 WO2022050099A1 (ja) 2020-09-01 2021-08-23 エッチング方法

Publications (2)

Publication Number Publication Date
CN116210072A CN116210072A (zh) 2023-06-02
CN116210072B true CN116210072B (zh) 2025-12-12

Family

ID=80490882

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202180053507.1A Active CN116210072B (zh) 2020-09-01 2021-08-23 蚀刻方法

Country Status (6)

Country Link
US (1) US20240030037A1 (https=)
JP (1) JP7744352B2 (https=)
KR (1) KR102949166B1 (https=)
CN (1) CN116210072B (https=)
TW (1) TWI885198B (https=)
WO (1) WO2022050099A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW202335134A (zh) 2021-10-19 2023-09-01 德商馬克專利公司 選擇性的熱原子層蝕刻
JP7709946B2 (ja) * 2022-09-22 2025-07-17 株式会社Kokusai Electric 基板処理方法、半導体装置の製造方法、プログラム、及び基板処理装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8828883B2 (en) 2010-08-24 2014-09-09 Micron Technology, Inc. Methods and apparatuses for energetic neutral flux generation for processing a substrate
JP2016025195A (ja) * 2014-07-18 2016-02-08 東京エレクトロン株式会社 エッチング方法
US9431268B2 (en) * 2015-01-05 2016-08-30 Lam Research Corporation Isotropic atomic layer etch for silicon and germanium oxides
CN106548936B (zh) * 2015-09-23 2022-04-22 北京北方华创微电子装备有限公司 一种金属层的刻蚀方法
US10283369B2 (en) * 2016-08-10 2019-05-07 Tokyo Electron Limited Atomic layer etching using a boron-containing gas and hydrogen fluoride gas
JP6855191B2 (ja) * 2016-08-29 2021-04-07 株式会社Adeka 原子層堆積法による金属薄膜の製造方法
KR102805391B1 (ko) * 2016-12-09 2025-05-12 에이에스엠 아이피 홀딩 비.브이. 열적 원자층 식각 공정
US10832909B2 (en) 2017-04-24 2020-11-10 Lam Research Corporation Atomic layer etch, reactive precursors and energetic sources for patterning applications
JP6501858B2 (ja) * 2017-12-13 2019-04-17 関東化學株式会社 金属酸化物エッチング液組成物およびエッチング方法
WO2019182916A1 (en) * 2018-03-20 2019-09-26 Tokyo Electron Limited Substrate processing tool with integrated metrology and method of using
SG11202009105YA (en) * 2018-03-20 2020-10-29 Tokyo Electron Ltd Self-aware and correcting heterogenous platform incorporating integrated semiconductor processing modules and method for using same
CN113316839B (zh) * 2019-01-15 2025-09-12 朗姆研究公司 利用无金属配体的金属原子层蚀刻及沉积设备和处理
JP2020136602A (ja) 2019-02-25 2020-08-31 株式会社Adeka エッチング方法

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004091829A (ja) * 2002-08-30 2004-03-25 Tokyo Electron Ltd エッチング方法及びエッチング装置

Also Published As

Publication number Publication date
KR102949166B1 (ko) 2026-04-06
TWI885198B (zh) 2025-06-01
WO2022050099A1 (ja) 2022-03-10
KR20230057348A (ko) 2023-04-28
JPWO2022050099A1 (https=) 2022-03-10
CN116210072A (zh) 2023-06-02
JP7744352B2 (ja) 2025-09-25
US20240030037A1 (en) 2024-01-25
TW202224003A (zh) 2022-06-16

Similar Documents

Publication Publication Date Title
KR102282188B1 (ko) 에칭 방법 및 에칭 장치
US11174550B2 (en) Selective deposition on metal or metallic surfaces relative to dielectric surfaces
JP6813983B2 (ja) アルミニウム及び窒素を含む材料の選択的堆積
KR101012959B1 (ko) 기판 처리 방법 및 기록매체
CN1306571C (zh) 金属硅化物膜的制作方法和金属氧化物半导体器件
US20160222504A1 (en) Selective deposition
TW201925526A (zh) 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
KR20160145165A (ko) 불소-함유 도전성 막들
CN116113724B (zh) 用选择剂形成区域选择性薄膜的方法
CN116210072B (zh) 蚀刻方法
CN117280455A (zh) 用于基板处理的涂布的基板支撑组件
WO2017203775A1 (ja) 薄膜形成用原料及び薄膜の製造方法
JP2020136602A (ja) エッチング方法
WO2020203636A1 (ja) 原子層エッチングのためのエッチング材料
Ryoo et al. Atomic layer deposition of HfN x films and improving the film performance by annealing under NH 3 atmosphere
CN114616651A (zh) 干式蚀刻方法、半导体器件的制造方法和蚀刻装置
TWI847351B (zh) 鉬前驅物化合物
US10366879B2 (en) Dry and wet etch resistance for atomic layer deposited TiO2 for SIT spacer application
US11926903B2 (en) Etching of alkali metal compounds
KR20230104735A (ko) 기판 처리 방법, 프로그램, 기판 처리 장치 및 반도체 장치의 제조 방법
TWI865674B (zh) 含銅層之製造方法
WO2018179924A1 (ja) 原子層堆積法による酸化イットリウム含有薄膜の製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant