JP7482785B2 - 面発光レーザ装置の駆動方法および面発光レーザ装置 - Google Patents

面発光レーザ装置の駆動方法および面発光レーザ装置 Download PDF

Info

Publication number
JP7482785B2
JP7482785B2 JP2020555980A JP2020555980A JP7482785B2 JP 7482785 B2 JP7482785 B2 JP 7482785B2 JP 2020555980 A JP2020555980 A JP 2020555980A JP 2020555980 A JP2020555980 A JP 2020555980A JP 7482785 B2 JP7482785 B2 JP 7482785B2
Authority
JP
Japan
Prior art keywords
pulse
light emission
emitting lasers
temperature
emitter
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020555980A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2020100572A5 (https=
JPWO2020100572A1 (ja
Inventor
修 前田
翔太 渡邊
基 木村
重吾 御友
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of JPWO2020100572A1 publication Critical patent/JPWO2020100572A1/ja
Publication of JPWO2020100572A5 publication Critical patent/JPWO2020100572A5/ja
Application granted granted Critical
Publication of JP7482785B2 publication Critical patent/JP7482785B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06835—Stabilising during pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
JP2020555980A 2018-11-16 2019-10-29 面発光レーザ装置の駆動方法および面発光レーザ装置 Active JP7482785B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018215382 2018-11-16
JP2018215382 2018-11-16
PCT/JP2019/042341 WO2020100572A1 (ja) 2018-11-16 2019-10-29 面発光レーザの駆動方法および面発光レーザ装置

Publications (3)

Publication Number Publication Date
JPWO2020100572A1 JPWO2020100572A1 (ja) 2021-09-30
JPWO2020100572A5 JPWO2020100572A5 (https=) 2022-11-02
JP7482785B2 true JP7482785B2 (ja) 2024-05-14

Family

ID=70730895

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020555980A Active JP7482785B2 (ja) 2018-11-16 2019-10-29 面発光レーザ装置の駆動方法および面発光レーザ装置

Country Status (4)

Country Link
US (1) US12009638B2 (https=)
JP (1) JP7482785B2 (https=)
DE (1) DE112019005741T5 (https=)
WO (1) WO2020100572A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3923432B1 (en) * 2020-06-11 2023-03-01 Mitsubishi Electric R&D Centre Europe B.V. Open-circuit self-diagnostic method for modular general purpose inverters
JP2022045535A (ja) * 2020-09-09 2022-03-22 ソニーセミコンダクタソリューションズ株式会社 面発光レーザ装置、電子機器及び面発光レーザ装置の製造方法
WO2026028620A1 (ja) * 2024-07-31 2026-02-05 ソニーセミコンダクタソリューションズ株式会社 フォトニック結晶面発光素子、電子機器及びフォトニック結晶面発光素子の製造方法

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006048885A (ja) 2003-09-25 2006-02-16 Matsushita Electric Ind Co Ltd レーザ駆動装置
WO2006106810A1 (ja) 2005-03-30 2006-10-12 Pioneer Corporation 半導体レーザ駆動装置、及び半導体レーザ駆動方法
JP2007329429A (ja) 2006-06-09 2007-12-20 Canon Inc 画像形成装置及びレーザ光量補正方法
WO2008041648A1 (en) 2006-09-29 2008-04-10 Panasonic Corporation Laser light emitting device and image display device using the same
JP2009069663A (ja) 2007-09-14 2009-04-02 Ricoh Co Ltd 画像形成装置および画像形成方法
JP2011071330A (ja) 2009-09-25 2011-04-07 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP2011216662A (ja) 2010-03-31 2011-10-27 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP2011222548A (ja) 2010-04-02 2011-11-04 Sony Corp 半導体発光装置
JP2012209501A (ja) 2011-03-30 2012-10-25 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP2014075479A (ja) 2012-10-04 2014-04-24 Sony Corp 駆動装置および発光装置
JP2014075492A (ja) 2012-10-04 2014-04-24 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
WO2018096949A1 (ja) 2016-11-28 2018-05-31 ソニーセミコンダクタソリューションズ株式会社 駆動装置および発光装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5568686A (en) * 1978-11-17 1980-05-23 Matsushita Electric Ind Co Ltd Semiconductor light emission device
JP2744650B2 (ja) 1989-07-04 1998-04-28 富士通株式会社 発光素子駆動回路用制御装置
US5404367A (en) * 1994-07-05 1995-04-04 Xerox Corporation Scanner droop and cross talk correction
US20050069002A1 (en) 2003-09-25 2005-03-31 Hisashi Senga Laser driving device
JP2013226746A (ja) 2012-04-26 2013-11-07 Canon Inc 光走査装置、その制御方法及び制御プログラム並びに画像形成装置

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006048885A (ja) 2003-09-25 2006-02-16 Matsushita Electric Ind Co Ltd レーザ駆動装置
WO2006106810A1 (ja) 2005-03-30 2006-10-12 Pioneer Corporation 半導体レーザ駆動装置、及び半導体レーザ駆動方法
JP2007329429A (ja) 2006-06-09 2007-12-20 Canon Inc 画像形成装置及びレーザ光量補正方法
WO2008041648A1 (en) 2006-09-29 2008-04-10 Panasonic Corporation Laser light emitting device and image display device using the same
JP2009069663A (ja) 2007-09-14 2009-04-02 Ricoh Co Ltd 画像形成装置および画像形成方法
JP2011071330A (ja) 2009-09-25 2011-04-07 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP2011216662A (ja) 2010-03-31 2011-10-27 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP2011222548A (ja) 2010-04-02 2011-11-04 Sony Corp 半導体発光装置
JP2012209501A (ja) 2011-03-30 2012-10-25 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
JP2014075479A (ja) 2012-10-04 2014-04-24 Sony Corp 駆動装置および発光装置
JP2014075492A (ja) 2012-10-04 2014-04-24 Sony Corp 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法
WO2018096949A1 (ja) 2016-11-28 2018-05-31 ソニーセミコンダクタソリューションズ株式会社 駆動装置および発光装置

Also Published As

Publication number Publication date
DE112019005741T5 (de) 2021-07-29
US20210384710A1 (en) 2021-12-09
JPWO2020100572A1 (ja) 2021-09-30
WO2020100572A1 (ja) 2020-05-22
US12009638B2 (en) 2024-06-11

Similar Documents

Publication Publication Date Title
JP7482785B2 (ja) 面発光レーザ装置の駆動方法および面発光レーザ装置
JP5428485B2 (ja) 面発光型半導体レーザ素子のバーンイン方法およびそのプログラム
US8654802B2 (en) Vertical-cavity surface-emitting laser array, vertical-cavity surface-emitting laser device, optical transmission apparatus, and information processing apparatus
JP4815812B2 (ja) 垂直共振器型面発光半導体レーザ装置
US20220114835A1 (en) Light-emitting device, optical device, and information processing device
JP2001225502A (ja) 集積発光源の高均一性を達成するためのマイクロスプリング内部配線を有するハイブリッド装置
US20080240196A1 (en) Surface emitting laser array, method for manufacturing the same, and semiconductor device
TW201310826A (zh) 校正電路，驅動電路，發光裝置，以及校正電流脈衝波形之方法
US20140023380A1 (en) Surface emitting semiconductor laser, surface emitting semiconductor laser device, optical transmission device, and information processing apparatus
WO2021020134A1 (ja) 発光素子及び測距装置
CN103715602B (zh) 校正电路、驱动电路、发光单元和电流脉冲波形校正方法
US7873092B2 (en) Laser diode
US11362135B2 (en) Light emitting element array and optical transmission device
JP3251966B2 (ja) 半導体レーザアレイの操作方法
JP4058633B2 (ja) 面発光型発光素子、光モジュール、光伝達装置
WO2021024507A1 (ja) 発光装置、光学装置及び情報処理装置
CN108075353B (zh) 发光元件阵列和光传输装置
JP6327320B2 (ja) 光伝送装置
KR20070092172A (ko) 레이저 어셈블리, 이것의 형성 방법 및 이것을 포함하는장치
JP6724961B2 (ja) 発光素子アレイ
JP5533154B2 (ja) 半導体発光装置
JP7767790B2 (ja) 発光装置及び光測定装置
US20220003874A1 (en) Light-emitting device, optical device, and information processing device
JP6835152B2 (ja) 発光素子アレイ、および光伝送装置
JP6327321B2 (ja) 光伝送装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20221024

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20221024

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20231024

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20231219

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20240123

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240313

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20240402

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20240430

R150 Certificate of patent or registration of utility model

Ref document number: 7482785

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150