DE112019005741T5 - Verfahren zur ansteuerung eines oberflächenemissionslasers undoberflächenemissionslaservorrichtung - Google Patents
Verfahren zur ansteuerung eines oberflächenemissionslasers undoberflächenemissionslaservorrichtung Download PDFInfo
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- DE112019005741T5 DE112019005741T5 DE112019005741.3T DE112019005741T DE112019005741T5 DE 112019005741 T5 DE112019005741 T5 DE 112019005741T5 DE 112019005741 T DE112019005741 T DE 112019005741T DE 112019005741 T5 DE112019005741 T5 DE 112019005741T5
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- surface emitting
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Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0239—Combinations of electrical or optical elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
- H01S5/06835—Stabilising during pulse modulation or generation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018-215382 | 2018-11-16 | ||
| JP2018215382 | 2018-11-16 | ||
| PCT/JP2019/042341 WO2020100572A1 (ja) | 2018-11-16 | 2019-10-29 | 面発光レーザの駆動方法および面発光レーザ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE112019005741T5 true DE112019005741T5 (de) | 2021-07-29 |
Family
ID=70730895
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE112019005741.3T Pending DE112019005741T5 (de) | 2018-11-16 | 2019-10-29 | Verfahren zur ansteuerung eines oberflächenemissionslasers undoberflächenemissionslaservorrichtung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12009638B2 (https=) |
| JP (1) | JP7482785B2 (https=) |
| DE (1) | DE112019005741T5 (https=) |
| WO (1) | WO2020100572A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP3923432B1 (en) * | 2020-06-11 | 2023-03-01 | Mitsubishi Electric R&D Centre Europe B.V. | Open-circuit self-diagnostic method for modular general purpose inverters |
| JP2022045535A (ja) * | 2020-09-09 | 2022-03-22 | ソニーセミコンダクタソリューションズ株式会社 | 面発光レーザ装置、電子機器及び面発光レーザ装置の製造方法 |
| WO2026028620A1 (ja) * | 2024-07-31 | 2026-02-05 | ソニーセミコンダクタソリューションズ株式会社 | フォトニック結晶面発光素子、電子機器及びフォトニック結晶面発光素子の製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013226746A (ja) | 2012-04-26 | 2013-11-07 | Canon Inc | 光走査装置、その制御方法及び制御プログラム並びに画像形成装置 |
| JP2014075492A (ja) | 2012-10-04 | 2014-04-24 | Sony Corp | 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5568686A (en) * | 1978-11-17 | 1980-05-23 | Matsushita Electric Ind Co Ltd | Semiconductor light emission device |
| JP2744650B2 (ja) | 1989-07-04 | 1998-04-28 | 富士通株式会社 | 発光素子駆動回路用制御装置 |
| US5404367A (en) * | 1994-07-05 | 1995-04-04 | Xerox Corporation | Scanner droop and cross talk correction |
| US20050069002A1 (en) | 2003-09-25 | 2005-03-31 | Hisashi Senga | Laser driving device |
| JP4398331B2 (ja) | 2003-09-25 | 2010-01-13 | パナソニック株式会社 | レーザ駆動装置、光ディスク装置、レーザ駆動方法およびレーザ駆動用集積回路 |
| WO2006106810A1 (ja) * | 2005-03-30 | 2006-10-12 | Pioneer Corporation | 半導体レーザ駆動装置、及び半導体レーザ駆動方法 |
| JP5016853B2 (ja) * | 2006-06-09 | 2012-09-05 | キヤノン株式会社 | 画像形成装置及びレーザ光量補正方法 |
| JP5457031B2 (ja) | 2006-09-29 | 2014-04-02 | パナソニック株式会社 | レーザ発光装置とそれを用いた画像表示装置 |
| JP2009069663A (ja) * | 2007-09-14 | 2009-04-02 | Ricoh Co Ltd | 画像形成装置および画像形成方法 |
| JP5659476B2 (ja) | 2009-09-25 | 2015-01-28 | ソニー株式会社 | 補正回路、駆動回路および発光装置 |
| JP5651983B2 (ja) | 2010-03-31 | 2015-01-14 | ソニー株式会社 | 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 |
| JP5533154B2 (ja) * | 2010-04-02 | 2014-06-25 | ソニー株式会社 | 半導体発光装置 |
| JP2012209501A (ja) * | 2011-03-30 | 2012-10-25 | Sony Corp | 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 |
| JP6328876B2 (ja) | 2012-10-04 | 2018-05-23 | ソニー株式会社 | 駆動装置および発光装置 |
| US10833477B2 (en) | 2016-11-28 | 2020-11-10 | Sony Semiconductor Solutions Corporation | Drive unit and light-emitting device |
-
2019
- 2019-10-29 US US17/286,540 patent/US12009638B2/en active Active
- 2019-10-29 JP JP2020555980A patent/JP7482785B2/ja active Active
- 2019-10-29 DE DE112019005741.3T patent/DE112019005741T5/de active Pending
- 2019-10-29 WO PCT/JP2019/042341 patent/WO2020100572A1/ja not_active Ceased
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013226746A (ja) | 2012-04-26 | 2013-11-07 | Canon Inc | 光走査装置、その制御方法及び制御プログラム並びに画像形成装置 |
| JP2014075492A (ja) | 2012-10-04 | 2014-04-24 | Sony Corp | 補正回路、駆動回路、発光装置、および電流パルス波形の補正方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7482785B2 (ja) | 2024-05-14 |
| US20210384710A1 (en) | 2021-12-09 |
| JPWO2020100572A1 (ja) | 2021-09-30 |
| WO2020100572A1 (ja) | 2020-05-22 |
| US12009638B2 (en) | 2024-06-11 |
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