JPS5568686A - Semiconductor light emission device - Google Patents

Semiconductor light emission device

Info

Publication number
JPS5568686A
JPS5568686A JP14264478A JP14264478A JPS5568686A JP S5568686 A JPS5568686 A JP S5568686A JP 14264478 A JP14264478 A JP 14264478A JP 14264478 A JP14264478 A JP 14264478A JP S5568686 A JPS5568686 A JP S5568686A
Authority
JP
Japan
Prior art keywords
light emission
junction
terminal
power supply
diode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14264478A
Other languages
Japanese (ja)
Inventor
Nobuhide Matsuda
Michio Matsuki
Masafumi Hashimoto
Hideji Fukazawa
Masashi Futamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic System Solutions Japan Co Ltd
Panasonic Holdings Corp
Original Assignee
Matsushita Graphic Communication Systems Inc
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Graphic Communication Systems Inc, Matsushita Electric Industrial Co Ltd filed Critical Matsushita Graphic Communication Systems Inc
Priority to JP14264478A priority Critical patent/JPS5568686A/en
Publication of JPS5568686A publication Critical patent/JPS5568686A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Led Devices (AREA)

Abstract

PURPOSE:To generate constant light emission intensity regardless of temperature change at a semiconductor light emission device by arranging temperature detecting pn-junction in the vicinity of a light emission diode and controlling the output of a diode drive power supply corresponding to forward voltage. CONSTITUTION:Light emission source pn-junction 21 having an electrode 23 and temperature measuring pn-junction 22 having electrode 24 are arranged on a light emission diode chip 25 at their junction interval of less than 660mum, and the chip 25 is thus secured to a header 26. A serial circuit of a light emission power supply 53, an inverter 54 and a preamplifier 55 is connected between the light emission terminal 51 and temperature measuring terminal 52 of the light emission device 50 thus constructed. The forward voltage of the junction 22 detected by the terminal 52 is amplified by the preamplifier 55 and inverted by the inverter 54 and applied to the power supply 53 to thereby control the current applied to the terminal 51 so as to automatically compensate the temperature change to thereby cause the light emission intensity from the device 50 to be always constant.
JP14264478A 1978-11-17 1978-11-17 Semiconductor light emission device Pending JPS5568686A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14264478A JPS5568686A (en) 1978-11-17 1978-11-17 Semiconductor light emission device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14264478A JPS5568686A (en) 1978-11-17 1978-11-17 Semiconductor light emission device

Publications (1)

Publication Number Publication Date
JPS5568686A true JPS5568686A (en) 1980-05-23

Family

ID=15320138

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14264478A Pending JPS5568686A (en) 1978-11-17 1978-11-17 Semiconductor light emission device

Country Status (1)

Country Link
JP (1) JPS5568686A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134265U (en) * 1986-02-18 1987-08-24
JP2011222548A (en) * 2010-04-02 2011-11-04 Sony Corp Semiconductor light-emitting device
WO2017142680A1 (en) * 2016-02-18 2017-08-24 Rosemount Analytical Inc. Led continuous constant irradiance with temperature variation
WO2020100572A1 (en) * 2018-11-16 2020-05-22 ソニーセミコンダクタソリューションズ株式会社 Method for driving surface emission laser and surface emission laser device

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134265U (en) * 1986-02-18 1987-08-24
JP2011222548A (en) * 2010-04-02 2011-11-04 Sony Corp Semiconductor light-emitting device
WO2017142680A1 (en) * 2016-02-18 2017-08-24 Rosemount Analytical Inc. Led continuous constant irradiance with temperature variation
WO2020100572A1 (en) * 2018-11-16 2020-05-22 ソニーセミコンダクタソリューションズ株式会社 Method for driving surface emission laser and surface emission laser device
JPWO2020100572A1 (en) * 2018-11-16 2021-09-30 ソニーセミコンダクタソリューションズ株式会社 Surface emitting laser driving method and surface emitting laser device
US12009638B2 (en) 2018-11-16 2024-06-11 Sony Semiconductor Solutions Corporation Surface emission laser driving method and surface emission laser device

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