JPS567477A - Amplification switching semiconductor device - Google Patents

Amplification switching semiconductor device

Info

Publication number
JPS567477A
JPS567477A JP8370679A JP8370679A JPS567477A JP S567477 A JPS567477 A JP S567477A JP 8370679 A JP8370679 A JP 8370679A JP 8370679 A JP8370679 A JP 8370679A JP S567477 A JPS567477 A JP S567477A
Authority
JP
Japan
Prior art keywords
transistor
amplification
parallel
semiconductor device
feedback control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8370679A
Other languages
Japanese (ja)
Inventor
Masahiko Akamatsu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP8370679A priority Critical patent/JPS567477A/en
Publication of JPS567477A publication Critical patent/JPS567477A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Thyristors (AREA)
  • Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)

Abstract

PURPOSE:To improve the amplification degree without increasing the threshold voltage of a forward voltage drop by constituting the switching device by bonding means including a main semiconductor element, an amplification transistor and an intermediate transistor, amplifying means and feedback means. CONSTITUTION:A main semiconductor element 10 comprising a transistor is connected between terminals ME1 and ME2 connected to a power circuit, and bonding means 30' comprising an intermediate transistor 30 is connected in parallel to the element 10. Then, this connecting point is connected through lead-out means 40 to a feedback control transistor 51 and feedback control means 50 comprising a luminous diode 52 which is light irradiating means, and an amplification transistor 20 is provided in parallel to the element 10. Further, photosignal irradiating means 60 comprising a phototransistor 61 and a luminous diode 62 arranged in opposite thereto is provided in parallel to means 50 and 30', and light irradiation to the above means 60 is controlled to perform a power amplification of a high amplification.
JP8370679A 1979-06-29 1979-06-29 Amplification switching semiconductor device Pending JPS567477A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8370679A JPS567477A (en) 1979-06-29 1979-06-29 Amplification switching semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8370679A JPS567477A (en) 1979-06-29 1979-06-29 Amplification switching semiconductor device

Publications (1)

Publication Number Publication Date
JPS567477A true JPS567477A (en) 1981-01-26

Family

ID=13809930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8370679A Pending JPS567477A (en) 1979-06-29 1979-06-29 Amplification switching semiconductor device

Country Status (1)

Country Link
JP (1) JPS567477A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014096A (en) * 1989-02-09 1991-05-07 Matsushita Electric Industrial Co., Ltd. Optoelectronic integrated circuit with optical gate device and phototransistor
JP2007159378A (en) * 2005-12-09 2007-06-21 Hitachi Ltd Dynamo-electric machine or ac generator, and manufacturing method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5014096A (en) * 1989-02-09 1991-05-07 Matsushita Electric Industrial Co., Ltd. Optoelectronic integrated circuit with optical gate device and phototransistor
JP2007159378A (en) * 2005-12-09 2007-06-21 Hitachi Ltd Dynamo-electric machine or ac generator, and manufacturing method thereof

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