JPS55138927A - Photo-coupling semiconductor switch device - Google Patents
Photo-coupling semiconductor switch deviceInfo
- Publication number
- JPS55138927A JPS55138927A JP4780179A JP4780179A JPS55138927A JP S55138927 A JPS55138927 A JP S55138927A JP 4780179 A JP4780179 A JP 4780179A JP 4780179 A JP4780179 A JP 4780179A JP S55138927 A JPS55138927 A JP S55138927A
- Authority
- JP
- Japan
- Prior art keywords
- current
- transistor
- photo
- light
- turning
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
- H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
- H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
Landscapes
- Electronic Switches (AREA)
Abstract
PURPOSE:To make it possible to elevate a turn ON switching speed, by reinforcing light emission from the light emitting means at the first stage in which a photo- sensitive semiconductor switch conducts. CONSTITUTION:Current i4 is delivered to the light emitting element 4 from the light emission control means 50 which causes conduction between the main switch terminals C-E, the light is emitted from the element 4, the light is irradiated to the photo-transistor 3, the current of the photo-transistor 3 is amplified by the amplifying transistor 2, and is delivered to the base of the main transistor 1. When the transistor 55 is made conducting in order to make the current i4A flow into the light emitting element 4, the current which has added the continuous current i42 and the first stage reinforcing current i41 which is an electric discharging current from the capacitor 54 flows at the first stage of turning ON, therefore it is possible to prevent the breakdown caused by a switching loss when turning ON in the high voltage circuit, reducing a drop of turning ON speed.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4780179A JPS55138927A (en) | 1979-04-17 | 1979-04-17 | Photo-coupling semiconductor switch device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4780179A JPS55138927A (en) | 1979-04-17 | 1979-04-17 | Photo-coupling semiconductor switch device |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55138927A true JPS55138927A (en) | 1980-10-30 |
JPS6348208B2 JPS6348208B2 (en) | 1988-09-28 |
Family
ID=12785464
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4780179A Granted JPS55138927A (en) | 1979-04-17 | 1979-04-17 | Photo-coupling semiconductor switch device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55138927A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930326A (en) * | 1982-08-12 | 1984-02-17 | Mitsubishi Electric Corp | Signal transmission circuit |
JPS6378615A (en) * | 1986-09-22 | 1988-04-08 | Mitsubishi Electric Corp | Driving circuit for light emitting element |
JPS6388915A (en) * | 1986-10-02 | 1988-04-20 | Mitsubishi Electric Corp | Light emitting element driving circuit |
JPH01137824A (en) * | 1987-11-25 | 1989-05-30 | Matsushita Electric Works Ltd | Switching device |
JPH052452U (en) * | 1991-02-21 | 1993-01-14 | 三菱電機株式会社 | Semiconductor circuit breaker |
JP2007150003A (en) * | 2005-11-29 | 2007-06-14 | Fuji Electric Device Technology Co Ltd | Insulated signal transmission circuit |
-
1979
- 1979-04-17 JP JP4780179A patent/JPS55138927A/en active Granted
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5930326A (en) * | 1982-08-12 | 1984-02-17 | Mitsubishi Electric Corp | Signal transmission circuit |
JPS6378615A (en) * | 1986-09-22 | 1988-04-08 | Mitsubishi Electric Corp | Driving circuit for light emitting element |
JPS6388915A (en) * | 1986-10-02 | 1988-04-20 | Mitsubishi Electric Corp | Light emitting element driving circuit |
JPH01137824A (en) * | 1987-11-25 | 1989-05-30 | Matsushita Electric Works Ltd | Switching device |
JPH052452U (en) * | 1991-02-21 | 1993-01-14 | 三菱電機株式会社 | Semiconductor circuit breaker |
JP2007150003A (en) * | 2005-11-29 | 2007-06-14 | Fuji Electric Device Technology Co Ltd | Insulated signal transmission circuit |
Also Published As
Publication number | Publication date |
---|---|
JPS6348208B2 (en) | 1988-09-28 |
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