DE69701544T2 - Oberflächenemittierende Diodenlasereinheit mit optischer Leistungsüberwachung - Google Patents

Oberflächenemittierende Diodenlasereinheit mit optischer Leistungsüberwachung

Info

Publication number
DE69701544T2
DE69701544T2 DE69701544T DE69701544T DE69701544T2 DE 69701544 T2 DE69701544 T2 DE 69701544T2 DE 69701544 T DE69701544 T DE 69701544T DE 69701544 T DE69701544 T DE 69701544T DE 69701544 T2 DE69701544 T2 DE 69701544T2
Authority
DE
Germany
Prior art keywords
emitting diode
optical power
surface emitting
diode laser
power monitoring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69701544T
Other languages
English (en)
Other versions
DE69701544D1 (de
Inventor
Il Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of DE69701544D1 publication Critical patent/DE69701544D1/de
Publication of DE69701544T2 publication Critical patent/DE69701544T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/09—Processes or apparatus for excitation, e.g. pumping
    • H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
    • H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
    • H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
    • H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1078—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with means to control the spontaneous emission, e.g. reducing or reinjection

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Head (AREA)
DE69701544T 1996-04-25 1997-04-14 Oberflächenemittierende Diodenlasereinheit mit optischer Leistungsüberwachung Expired - Fee Related DE69701544T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960012985A KR0185950B1 (ko) 1996-04-25 1996-04-25 레이저다이오드의 광출력모니터링패케지

Publications (2)

Publication Number Publication Date
DE69701544D1 DE69701544D1 (de) 2000-05-04
DE69701544T2 true DE69701544T2 (de) 2000-08-24

Family

ID=19456756

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69701544T Expired - Fee Related DE69701544T2 (de) 1996-04-25 1997-04-14 Oberflächenemittierende Diodenlasereinheit mit optischer Leistungsüberwachung

Country Status (6)

Country Link
US (1) US6034981A (de)
EP (1) EP0803943B1 (de)
JP (1) JP2823849B2 (de)
KR (1) KR0185950B1 (de)
CN (1) CN1083600C (de)
DE (1) DE69701544T2 (de)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2346258A (en) 1999-01-30 2000-08-02 Mitel Semiconductor Ab Monitoring the light output of surface emitting lasers
US6368890B1 (en) * 1999-05-05 2002-04-09 Mitel Semiconductor Ab Top contact VCSEL with monitor
KR100317576B1 (ko) * 1999-11-08 2001-12-24 윤덕용 모니터용 광검출기 일체형 표면광 레이저장치
JP3738849B2 (ja) 2003-08-07 2006-01-25 セイコーエプソン株式会社 面発光型半導体レーザ、光モジュール、ならびに光伝達装置
KR20050019485A (ko) * 2003-08-19 2005-03-03 삼성전자주식회사 광검출소자가 일체적으로 형성되는 수직 면발광 레이저
US7746911B2 (en) * 2004-06-25 2010-06-29 Finisar Corporation Geometric optimizations for reducing spontaneous emissions in photodiodes
US7418021B2 (en) * 2004-06-25 2008-08-26 Finisar Corporation Optical apertures for reducing spontaneous emissions in photodiodes
US7310153B2 (en) * 2004-08-23 2007-12-18 Palo Alto Research Center, Incorporated Using position-sensitive detectors for wavelength determination
JP4019285B2 (ja) * 2005-02-04 2007-12-12 セイコーエプソン株式会社 面発光型装置及びその製造方法
US8437582B2 (en) 2005-12-22 2013-05-07 Palo Alto Research Center Incorporated Transmitting light with lateral variation
US7718948B2 (en) * 2006-12-04 2010-05-18 Palo Alto Research Center Incorporated Monitoring light pulses
JP2011096787A (ja) * 2009-10-28 2011-05-12 Sony Corp 半導体発光装置
TWI675522B (zh) * 2019-01-15 2019-10-21 晶智達光電股份有限公司 發光元件

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63118259U (de) * 1987-01-24 1988-07-30
JPS63118259A (ja) * 1987-07-21 1988-05-23 Canon Inc インクカセット
JPH01146142A (ja) * 1987-12-02 1989-06-08 Mitsubishi Electric Corp ２ビーム半導体レーザ装置
JP3099921B2 (ja) * 1992-09-11 2000-10-16 株式会社東芝 受光素子付き面発光型半導体レーザ装置
US5475701A (en) * 1993-12-29 1995-12-12 Honeywell Inc. Integrated laser power monitor
KR100259490B1 (ko) * 1995-04-28 2000-06-15 윤종용 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치

Also Published As

Publication number Publication date
CN1083600C (zh) 2002-04-24
CN1165372A (zh) 1997-11-19
JP2823849B2 (ja) 1998-11-11
EP0803943A2 (de) 1997-10-29
DE69701544D1 (de) 2000-05-04
EP0803943B1 (de) 2000-03-29
JPH1055560A (ja) 1998-02-24
KR0185950B1 (ko) 1999-04-15
KR970072569A (ko) 1997-11-07
US6034981A (en) 2000-03-07
EP0803943A3 (de) 1998-04-29

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee