CN1083600C - 具有光功率监测功能的平面型激光二极管封装件 - Google Patents
具有光功率监测功能的平面型激光二极管封装件 Download PDFInfo
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- CN1083600C CN1083600C CN97110583A CN97110583A CN1083600C CN 1083600 C CN1083600 C CN 1083600C CN 97110583 A CN97110583 A CN 97110583A CN 97110583 A CN97110583 A CN 97110583A CN 1083600 C CN1083600 C CN 1083600C
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/09—Processes or apparatus for excitation, e.g. pumping
- H01S3/091—Processes or apparatus for excitation, e.g. pumping using optical pumping
- H01S3/094—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light
- H01S3/0941—Processes or apparatus for excitation, e.g. pumping using optical pumping by coherent light of a laser diode
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
- H01S5/0262—Photo-diodes, e.g. transceiver devices, bidirectional devices
- H01S5/0264—Photo-diodes, e.g. transceiver devices, bidirectional devices for monitoring the laser-output
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/1078—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region with means to control the spontaneous emission, e.g. reducing or reinjection
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Abstract
具有对表面型激光束进行光功率监测的表面型激光二极管封装件,包括:基底;借助上层反射镜和较低层反射镜使激活区产生的自发辐射光束振荡并发射由振荡得到的表面型激光束的表面型激光二极管;安装在该基底和该表面型激光二极管的较低层反射镜之间,用于根据经较低层反射镜向基底发射的表面型激光束完成光检测操作,以监测表面型激光二极管的光功率的监测二极管。该表面型激光二极管封装件能精确地监测该表面型激光二极管的光功率。
Description
本发明涉及具有监测二极管以用于监测表面型激光二极管的光功率的表面型激光二极管封装件。
一般的光盘系统,如CD播放机将激光投影到盘的信息记录表面然后读取记录在盘上的信息。在这种光盘系统中,如果激光光线的输出变化,当从盘上读取信号时就会出现错误。因此,该光盘系统包括一自动激光功率控制(ALPC)伺服电路以稳定地控制激光光线输出。该ALPC伺服电路包括一监测激光二极管的光功率的光二极管,该ALPC伺服电路根据从该光二极管流出电流控制驱动激光二极管的电流恒定。常规的表面型激光二极管封装件将参照图1和2在下面描述。
在图1的表面型激光二极管封装件中,监测二极管15具有一圆柱形状,包在表面型激光二极管12的外面。该监测二极管15检测从表面型激光二极管12的侧面发射的自发辐射光束。该检测到的光束用于监测表面型激光二极管12的光功率。如果一电流施加于该表面型激光二极管12的电极11,则该电流注入激活区13。如果该电流注入激活区13,则表面型激光二极管12产生自发辐射光束。如果注入激活区13的电流不小于激光振荡所需要的电流值,则从激活区13产生的自发辐射光束通过激光振荡转化成表面型激光光束。从激活区13发射的光束在上层反射镜121和较低层反射镜123之间振荡,然后从上层反射镜121发射出去并经较低层反射镜123被基底14吸收。上层反射镜121和较低层反射镜123插入到激活区13中以用作谐振腔。电流密度应大到足以产生表面型激光光束。所以在除了上层反射镜121和较低层反射镜123之间的激光振荡区以外的部分要经过氧化处理或注入质子以使之成为高电阻层从而增大电流密度。
由激活区13产生的自发辐射光束不会完全消失而是与表面型激光二极管12的光功率成比例地接连不断地发射。当电流加到监测二极管15的电极16时,监测二极管15接收从表面型激光二极管12侧面发射的自发辐射光束,然后输出与接收电流成比例的监测电流。
然而,图1的表面型激光二极管的封装件其温度特性不理想。所以,如果温度变化,就不能输出精确的监测电流。而且,自发辐射光束用于代替表面型激光光束也会造成光功率监测中的误差。
如图2所示的表面型激光二极管封装件,其中一监测二极管15安装在表面型激光二极管12上。当电流加到监测二极管15的电极16时,该监测二极管15检测从表面型激光二极管12发射的表面型激光光束部分。该被检测的光束用于监测表面型激光二极管12的光功率。
然而,由于监测器15检测自发辐射光束以及从该表面型激光二极管12发射的表面型激光光束,因此在光功率监测中已然产生了误差。另外,由于采用发射到外面的表面型激光光束,所以表面型激光二极管12的光功率有损耗而且制造过程变得复杂。
为了解决上述问题,本发明的一个目的是提供一能够监测光功率的表面型激光二极管封装件,它检测经表面型激光二极管较低层向基底发射的光束中除自发辐射光束以外的表面型激光光束。
为了实现本发明的上述目的,提供一种具有对表面型激光光束的光功率进行监测的表面型激光二极管封装件,该表面型激光二极管封装件包括:基底;表面型激光二极管,用于借助上层反射透镜和较低层反射透镜使激活区产生的自发辐射光束产生振荡,并发射通过振荡得到的表面型激光束;监测二极管,它安装在基底和该表面型激光二极管的较低层反射镜之间,用于根据经较低层反射镜发射到基底的表面型激光光束完成光检测操作。
以下参照附图描述优先实施例,其中:
图1和图2是常规表面型激光二极管封装件结构图。
图3是按照本发明优先实施例的表面型激光二极管封装件的结构图。
参照图3描述本发明的优先实施例。
参见图3,本发明采用的依据是从表面型激光二极管封装件的激活区发射的光线发射到上层反射镜和较低层反射镜两个方向。
在图3的表面型激光二极管封装件中,监测二极管15根据经该表面型激光二极管12的较低反射镜123射向基底14的激光光束完成激光检测操作。更详细地说,监测二极管15安装在P型基底14和该表面型激光二极管12的较低层反射镜123之间的接合部,并且根据经较低层反射镜123发射的光束完成光线检测。该监测二极管15产生与入射激光束密度成比例的监测器电流。参考号16代表监测二极管15的电极。
由激活区13产生的自发辐射光束沿不同方向随机发射,其中一部分在上层反射镜121和较低层反射镜123之间振荡。自发辐射光束中不在反射镜121和123之间振荡的光束导致表面型激光二极管12的光功率监测产生错误。一光散射部分30用于避免检测自发辐射光束。该光散射部分30是经氧化处理形成的且被安置在较低层反射镜123的表面除去表面型激光束发射的部位以外的地方。由此入射到光散射部分30的自发辐射光束被光散射部分30散射。其结果是:大多数不进行振荡的自发辐射光束被由氧化处理层构成的光散射部分30散射。
由表面型激光二极管12产生的表面型激光束经未形成光散射部分30的部分入射到监测二极管15。在这种情况下,一小部分自发辐射光束经未形成光散射部分30的部分入射到监测二极管15。然而,由于该入射的自发辐射光束具有极小的密度,所以对应表面型激光束的光功率产生的监测电流不发生变化。这样,监测二极管能够输出与表面型激光二极管12的光功率成比例的监测电流。
如上所述,具有光功率监测功能的表面型激光二极管封装件能够更精确地监测表面型激光二极管的光功率。
这里只是详细描述了本发明的某个实施例,很明显在不脱离本发明的意旨和范围的情况下可以对本发明做许多的改进。
Claims (3)
1.一表面型激光二极管封装件具有对表面型激光束进行光功率监测的功能,该表面型激光二极管封装件包括:
一基底;
一表面型激光二极管,用于借助上层平面镜和较低层平面镜使激活区产生的自发辐射光束产生振荡,并发射通过振荡得到的表面型激光束;
一监测二极管,安装在所述基底和所述表面型激光二极管的较低反射镜之间,用于根据经较低层发射到所述基底的表面型激光光束完成所述表面型激光二极管的光检测操作;以及
一光散射部分,它安装在所述监测二极管和所述表面型激光二极管的较低反射镜之间的结合部,用于经所述较低层反射镜将自发辐射光束散射。
2.如权利要求1所述的表面型激光二极管,其中所述光散射部分安装在除去对应于发射所述上层反射镜的表面型激光束的表面部分以外的所述较低层反射镜表面上。
3.如权利要求1所述的表面型激光二极管,其中所述光散射部分是经过氧化处理的。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR12985/96 | 1996-04-25 | ||
KR1019960012985A KR0185950B1 (ko) | 1996-04-25 | 1996-04-25 | 레이저다이오드의 광출력모니터링패케지 |
Publications (2)
Publication Number | Publication Date |
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CN1165372A CN1165372A (zh) | 1997-11-19 |
CN1083600C true CN1083600C (zh) | 2002-04-24 |
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CN97110583A Expired - Fee Related CN1083600C (zh) | 1996-04-25 | 1997-04-18 | 具有光功率监测功能的平面型激光二极管封装件 |
Country Status (6)
Country | Link |
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US (1) | US6034981A (zh) |
EP (1) | EP0803943B1 (zh) |
JP (1) | JP2823849B2 (zh) |
KR (1) | KR0185950B1 (zh) |
CN (1) | CN1083600C (zh) |
DE (1) | DE69701544T2 (zh) |
Families Citing this family (13)
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GB2346258A (en) | 1999-01-30 | 2000-08-02 | Mitel Semiconductor Ab | Monitoring the light output of surface emitting lasers |
US6368890B1 (en) * | 1999-05-05 | 2002-04-09 | Mitel Semiconductor Ab | Top contact VCSEL with monitor |
KR100317576B1 (ko) * | 1999-11-08 | 2001-12-24 | 윤덕용 | 모니터용 광검출기 일체형 표면광 레이저장치 |
JP3738849B2 (ja) * | 2003-08-07 | 2006-01-25 | セイコーエプソン株式会社 | 面発光型半導体レーザ、光モジュール、ならびに光伝達装置 |
KR20050019485A (ko) * | 2003-08-19 | 2005-03-03 | 삼성전자주식회사 | 광검출소자가 일체적으로 형성되는 수직 면발광 레이저 |
US7418021B2 (en) * | 2004-06-25 | 2008-08-26 | Finisar Corporation | Optical apertures for reducing spontaneous emissions in photodiodes |
US7746911B2 (en) * | 2004-06-25 | 2010-06-29 | Finisar Corporation | Geometric optimizations for reducing spontaneous emissions in photodiodes |
US7310153B2 (en) * | 2004-08-23 | 2007-12-18 | Palo Alto Research Center, Incorporated | Using position-sensitive detectors for wavelength determination |
JP4019285B2 (ja) * | 2005-02-04 | 2007-12-12 | セイコーエプソン株式会社 | 面発光型装置及びその製造方法 |
US8437582B2 (en) | 2005-12-22 | 2013-05-07 | Palo Alto Research Center Incorporated | Transmitting light with lateral variation |
US7718948B2 (en) * | 2006-12-04 | 2010-05-18 | Palo Alto Research Center Incorporated | Monitoring light pulses |
JP2011096787A (ja) * | 2009-10-28 | 2011-05-12 | Sony Corp | 半導体発光装置 |
TWI675522B (zh) * | 2019-01-15 | 2019-10-21 | 晶智達光電股份有限公司 | 發光元件 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JPH0697597A (ja) * | 1992-09-11 | 1994-04-08 | Toshiba Corp | 受光素子付き面発光型半導体レーザ装置 |
US5475701A (en) * | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
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JPS63118259U (zh) * | 1987-01-24 | 1988-07-30 | ||
JPS63118259A (ja) * | 1987-07-21 | 1988-05-23 | Canon Inc | インクカセット |
JPH01146142A (ja) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | 2ビーム半導体レーザ装置 |
KR100259490B1 (ko) * | 1995-04-28 | 2000-06-15 | 윤종용 | 광검출기 일체형 표면광 레이저와 이를 채용한 광픽업 장치 |
-
1996
- 1996-04-25 KR KR1019960012985A patent/KR0185950B1/ko not_active IP Right Cessation
-
1997
- 1997-04-14 EP EP97302521A patent/EP0803943B1/en not_active Expired - Lifetime
- 1997-04-14 DE DE69701544T patent/DE69701544T2/de not_active Expired - Fee Related
- 1997-04-18 CN CN97110583A patent/CN1083600C/zh not_active Expired - Fee Related
- 1997-04-23 JP JP9106183A patent/JP2823849B2/ja not_active Expired - Fee Related
- 1997-04-25 US US08/845,470 patent/US6034981A/en not_active Expired - Fee Related
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0697597A (ja) * | 1992-09-11 | 1994-04-08 | Toshiba Corp | 受光素子付き面発光型半導体レーザ装置 |
US5475701A (en) * | 1993-12-29 | 1995-12-12 | Honeywell Inc. | Integrated laser power monitor |
Also Published As
Publication number | Publication date |
---|---|
JPH1055560A (ja) | 1998-02-24 |
EP0803943A3 (en) | 1998-04-29 |
JP2823849B2 (ja) | 1998-11-11 |
DE69701544T2 (de) | 2000-08-24 |
US6034981A (en) | 2000-03-07 |
CN1165372A (zh) | 1997-11-19 |
KR0185950B1 (ko) | 1999-04-15 |
EP0803943B1 (en) | 2000-03-29 |
EP0803943A2 (en) | 1997-10-29 |
DE69701544D1 (de) | 2000-05-04 |
KR970072569A (ko) | 1997-11-07 |
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