WO2020100572A1 - 面発光レーザの駆動方法および面発光レーザ装置 - Google Patents

面発光レーザの駆動方法および面発光レーザ装置 Download PDF

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WO2020100572A1
WO2020100572A1 PCT/JP2019/042341 JP2019042341W WO2020100572A1 WO 2020100572 A1 WO2020100572 A1 WO 2020100572A1 JP 2019042341 W JP2019042341 W JP 2019042341W WO 2020100572 A1 WO2020100572 A1 WO 2020100572A1
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surface emitting
light
temperature
layer
emitter
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English (en)
French (fr)
Japanese (ja)
Inventor
前田　修
翔太 渡邊
基 木村
御友　重吾
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Priority to DE112019005741.3T priority Critical patent/DE112019005741T5/de
Priority to US17/286,540 priority patent/US12009638B2/en
Priority to JP2020555980A priority patent/JP7482785B2/ja
Publication of WO2020100572A1 publication Critical patent/WO2020100572A1/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0239—Combinations of electrical or optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0428—Electrical excitation ; Circuits therefor for applying pulses to the laser
    • H—ELECTRICITY
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    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/06804—Stabilisation of laser output parameters by monitoring an external parameter, e.g. temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
    • H01S5/06835—Stabilising during pulse modulation or generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/0233—Mounting configuration of laser chips
    • H01S5/02345—Wire-bonding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/0617—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium using memorised or pre-programmed laser characteristics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity

Definitions

  • the present technology relates to a method for driving a surface-emitting type semiconductor laser (hereinafter referred to as “surface-emitting laser”) that emits laser light from the upper surface, and a surface-emitting laser device including the surface-emitting laser.
  • surface-emitting laser a surface-emitting type semiconductor laser
  • This laser array in which a plurality of surface emitting lasers are formed on the same substrate has been actively developed.
  • This laser array is used as a light source for, for example, a laser printer or a structured light system.
  • a method for driving a surface emitting laser includes the following two steps.
  • the surface emitting laser device includes a plurality of surface emitting lasers arranged on the same substrate and a drive circuit for driving the plurality of surface emitting lasers.
  • the drive circuit selects one of the surface-emission lasers as a light-emission target based on the number of surface-emission lasers selected as light-emission targets and the monitor temperature immediately before light emission of each surface-emission laser selected as a light-emission target. After generating a plurality of drive pulses to be continuously output to each surface emitting laser, the generated plurality of drive pulses are output to each surface emitting laser selected as an emission target.
  • each surface-emission laser selected as an emission target is selected based on the number of surface-emission lasers to be emitted and the monitor temperature.
  • a plurality of drive pulses that are continuously output are generated.
  • a drive pulse that takes into account thermal crosstalk when a plurality of surface emitting lasers emit light simultaneously is generated.
  • FIG. 6 is a diagram illustrating a cross-sectional configuration example along line AA in FIG. 5.
  • FIG. 6A is a diagram illustrating a state in which all emitters are emitting light.
  • (B) is a diagram showing a correction coefficient when all the emitters are emitting light.
  • (B) is a diagram showing a correction coefficient when a part of the emitters is emitting light.
  • (A) It is a figure showing a mode that some emitters are emitting light.
  • (B) is a diagram showing a correction coefficient when a part of the emitters is emitting light.
  • FIG. 28 is a diagram illustrating a cross-sectional configuration example along line AA in FIG. 27.
  • FIG. 30 is a diagram illustrating a cross-sectional configuration example along line AA in FIG. 29. It is a figure showing a modification of the plane composition of the surface emitting laser device concerning the above-mentioned embodiment.
  • FIG. 32 is a diagram illustrating an example of a cross-sectional configuration taken along the line AA of the surface-emission laser device of FIG. 31.
  • FIG. 33 is a diagram illustrating a cross-sectional configuration example of each emitter in FIGS. 31 and 32.
  • a multi-emitter type surface emitting laser (VCSEL) is mainly used as a light source of a dot projector that irradiates a human face. ing.
  • the operation of the surface emitting laser has the following characteristics in view of the application of the structured light.
  • Simultaneous emission number: N Several tens to several hundreds of emitters
  • Light output: Po Several mW / emitters
  • Pulse width: Tpw Several ms ⁇ Pulse number: tens of times (for example, about 30 times)
  • the "light output unevenness" mentioned here includes not only the in-plane distribution that the central portion of the emitter array is dark and the peripheral portion is bright, but also the droop phenomenon that occurs within the pulse width of ms.
  • the droop phenomenon refers to a phenomenon in which the crest value of an optical pulse is large at the initial stage, but the crest value of the optical pulse decreases with time.
  • a stable operation method for a surface emitting laser is proposed for the purpose of enhancing the functionality of a face authentication system using a smartphone or the like.
  • FIG. 1 shows a planar configuration example of a surface emitting laser device 1 according to this embodiment.
  • FIG. 2 shows an example of a sectional structure taken along the line AA of FIG.
  • the surface emitting laser device 1 includes a laser chip 10 and a laser driver IC 20.
  • the laser chip 10 is arranged on the laser driver IC 20.
  • the laser chip 10 is electrically connected to the laser driver IC 20 via, for example, a bump 15 described later.
  • a bonding layer 23 is provided between the laser chip 10 and the laser driver IC 20.
  • the bonding layer 23 fixes the laser chip 10 and the laser driver IC 20 to each other.
  • the bonding layer 23 is made of, for example, a resin material having an insulating property, and is formed so as to fill the gap between the laser chip 10 and the laser driver IC 20.
  • the laser chip 10 includes, for example, a substrate 14, an emitter array 11 formed on the surface of the substrate 14 on the laser driver IC 20 side, and a plurality of bumps 15 formed on the surface of the substrate 14 on the laser driver IC 20 side.
  • the emitter array 11 is composed of a plurality of emitters 12 arranged on the same substrate 14, for example, as shown in FIGS.
  • the plurality of emitters 12 are, for example, arranged on the substrate 14 at equal intervals in the row direction and also at equal intervals in the column direction. Note that the plurality of emitters 12 may be randomly arranged on the same substrate 14.
  • Each emitter 12 is composed of a surface emitting semiconductor laser that emits laser light in the stacking direction. In the present embodiment, each emitter 12 emits laser light via the substrate 14 to the side opposite to the laser driver IC 20.
  • the substrate 14 is configured to include, for example, an n-type semiconductor substrate.
  • each emitter 12 includes a contact layer 12A, a DBR layer 12B, a spacer layer 12C, an active layer 12D, a spacer layer 12E, a current confinement layer 12F, and a DBR layer 12G from the laser driver IC 20 side. It has a columnar vertical resonator structure formed by stacking layers in order. Note that FIG. 3 shows an example of a cross-sectional configuration of a portion surrounded by a broken line in the laser chip 10 shown in FIG. In the present embodiment, each emitter 12 is formed by using the n-type semiconductor substrate of the substrate 14 as a crystal growth substrate, for example.
  • the contact layer 12A is made of, for example, p-type Al x1 Ga 1 -x1 As (0 ⁇ x1 ⁇ 1).
  • the DBR layer 12B is formed by alternately stacking low refractive index layers (not shown) and high refractive index layers (not shown).
  • the low refractive index layer is made of, for example, p-type Al x2 Ga 1 -x2 As (0 ⁇ x2 ⁇ 1) having an optical thickness of ⁇ 1 / 4 ( ⁇ 1 is an oscillation wavelength), and the high refractive index layer is made of, for example, an optical thickness of ⁇ 1.
  • the spacer layer 12C is made of, for example, p-type Al x4 Ga 1 -x4 As (0 ⁇ x4 ⁇ 1).
  • the contact layer 12A, the DBR layer 12B, and the spacer layer 12C contain p-type impurities such as carbon (C).
  • the active layer 12D includes, for example, a well layer (not shown) made of undoped In x5 Ga 1-x5 As (0 ⁇ x5 ⁇ 1) and undoped In x6 Ga 1-x6 As (0 ⁇ x6 ⁇ x5).
  • a well layer (not shown) made of undoped In x5 Ga 1-x5 As (0 ⁇ x5 ⁇ 1) and undoped In x6 Ga 1-x6 As (0 ⁇ x6 ⁇ x5).
  • a region of the active layer 12D facing the current injection region 12F-2 (described later) becomes a light emitting region.
  • the spacer layer 12E is made of, for example, n-type Al x7 Ga 1-x7 As (0 ⁇ x7 ⁇ 1).
  • the DBR layer 12G is configured by alternately stacking low refractive index layers (not shown) and high refractive index layers (not shown).
  • the low refractive index layer is made of, for example, n-type Al x8 Ga 1 -x8 As (0 ⁇ x8 ⁇ 1) having an optical thickness of ⁇ 1 / 4
  • the high refractive index layer is made of n-type Al having an optical thickness of ⁇ / 4, for example.
  • the DBR layer 12G is in contact with the substrate 14 and is electrically connected to the n-type semiconductor substrate of the substrate 14, for example.
  • the spacer layer 12E and the DBR layer 12G contain n-type impurities such as silicon (Si).
  • the current confinement layer 12F has a current confinement region 12F-1 in the peripheral region of the current injection region 12F-2.
  • the current injection region 12F-2 is made of, for example, p-type Al x10 Ga 1-x10 As (0 ⁇ x10 ⁇ 1).
  • the current confinement region 12F-1 is configured to include, for example, Al 2 O 3 (aluminum oxide), and is obtained by, for example, oxidizing the high concentration Al contained in the current confinement layer 12F from the side surface. Is. Therefore, the current confinement layer 12F has a function of confining the current.
  • Each emitter 12 further has, for example, as shown in FIG. 3, an electrode layer 12H in contact with the contact layer 12A.
  • the electrode layer 12H is electrically connected to the contact layer 12A.
  • the electrode layer 12H is also in contact with the bump 15, and is electrically connected to the laser driver IC 20 via the bump 15.
  • the electrode layer 12H is connected to the switch element Tr1 (described later) in the laser driver IC 20.
  • the electrode layer 12H includes, for example, a contact layer 12H1 formed by stacking a Ti layer, a Pt layer, and an Au layer in this order, and a pad layer 12H2 formed by stacking a Ti layer, a Pt layer, and an Au layer in this order. In this order from the contact layer 12A side.
  • Each emitter 12 further has insulating layers 17 and 18 for protecting the emitter 12, as shown in FIG. 3, for example.
  • the insulating layer 17 covers the side surface of the emitter 12 and has an opening in a portion of the emitter 12 facing the electrode layer 12H.
  • the insulating layer 17 also covers a portion that forms a pedestal of the connection pad 16 described below.
  • the insulating layer 17 is made of, for example, SiN.
  • the insulating layer 18 is in contact with the surface of the insulating layer 17 and has an opening in a portion of the emitter 12 facing the electrode layer 12H.
  • the insulating layer 18 covers a portion of the connection pad 16 described below, which is formed on the side surface of the pedestal.
  • the insulating layer 18 is made of, for example, SiN.
  • the laser chip 10 has a connection pad 16 around the emitter array 11 as shown in FIGS. 2 and 3, for example.
  • the connection pad 16 is formed on the surface of the pedestal portion 19 having the same structure as the vertical cavity structure in the emitter 12 on the laser driver IC 20 side.
  • the connection pad 16 extends from the side surface of the pedestal portion 19 to the surface of the substrate 14, and is electrically connected to, for example, the n-type semiconductor substrate of the substrate 14. That is, the connection pad 16 is electrically connected to the DBR layer 12G of each emitter via the substrate 14.
  • the connection pad 16 is also in contact with the bump 15 and is electrically connected to the laser driver IC 20 via the bump 15.
  • the connection pad 16 has the same potential as the reference potential of the laser driver IC 20, for example.
  • connection pad 16 has, for example, a pad layer 16A formed by laminating a Ti layer, a Pt layer, and an Au layer in this order, and a wiring layer 16B made of an Au layer in this order from the pedestal portion 19 side. ..
  • the wiring layer 16B may have, for example, a metal layer formed by stacking an AuGe layer, a Ni layer, and an Au layer in this order at a portion in contact with the substrate 14.
  • the laser driver IC 20 independently drives the plurality of emitters 12 provided on the laser chip 10 to cause some or all of the plurality of emitters 12 to emit light.
  • the laser driver IC 20 drives, for example, some or all of the emitters 12 selected by a system controller 30 described later among the plurality of emitters 12.
  • the laser driver IC 20 has, for example, a Si substrate 21, a wiring layer 22 formed on the Si substrate 21, and a plurality of temperature sensors 24 formed on the Si substrate 21.
  • a drive circuit that generates a drive pulse Pd for emitting and extinguishing the plurality of emitters 12 provided in the laser chip 10 and a plurality of temperature sensors 24 are formed.
  • the drive circuit is electrically connected to the laser chip 10 (each emitter 12) via the wiring layer 22.
  • the drive circuit is also electrically connected to the plurality of temperature sensors 24.
  • the wiring layer 22 has, for example, a plurality of metal layers 22a, a plurality of connection pads 22c, and a plurality of connection pads 22d in the insulating layer 22b.
  • the plurality of metal layers 22a electrically connect the drive circuit in the Si substrate 21 and the plurality of connection pads 22d to each other.
  • the plurality of metal layers 22a are further electrically connected to the plurality of temperature sensors 24 in the Si substrate 21.
  • the plurality of connection pads 22d are arranged in the wiring layer 22 at positions facing the laser chip 10, and are electrically connected to the plurality of bumps 15 provided on the laser chip 10.
  • connection pads 22c are arranged at positions in the wiring layer 22 that do not face the laser chip 10, and are electrically connected to, for example, bonding wires 54 described later.
  • the electrical connection mode between the laser chip 10 and the laser driver IC 20 is not limited to the one shown in FIG.
  • Each temperature sensor 24 is composed of, for example, a photodiode or a polysilicon resistor. Each temperature sensor 24 is arranged on the Si substrate 21 at a position facing the laser chip 10. Each temperature sensor 24 is further arranged at a position where the thermal time constant ⁇ between the active layer 12D (described later) of each emitter 12 and each temperature sensor 24 is shorter than the pulse interval t1 (described later). The thermal time constant ⁇ indicates, for example, the time required for the temperature difference between the active layer 12D of each emitter 12 and each temperature sensor 24 to become 1 / e. Each temperature sensor 24 is further arranged at a position where the thermal time constant ⁇ is shorter than t1-t2.
  • t2 is a period t2 in which the monitor temperature Tsi is read from the temperature sensor 24 immediately before the light emission.
  • each temperature sensor 24 can measure a temperature equal to or almost equal to the junction temperature Tj (t) (active layer temperature) immediately before the light emission of each emitter 12.
  • FIG. 4 shows a circuit configuration example of the surface emitting laser device 1.
  • the laser chip 10 has, for example, a plurality of emitters 12 and a plurality of switch elements Tr1 provided for each emitter 12.
  • Each switch element Tr1 is connected to the corresponding emitter 12 in series.
  • a DAC 21d (described later) is connected to the gate
  • an emitter 12 is connected to the source
  • a voltage line SRC to which a binary (VDD, VSS) voltage is applied is connected to the drain.
  • VDD has a voltage value of a magnitude necessary to supply a drive current to the emitter 12.
  • VSS has a voltage value of a magnitude necessary to keep the switch element Tr1 off.
  • Each switch element Tr1 is turned on / off by the drive current Pd input to the gate from the DAC 21d (described later) and the voltage input to the drain from the power supply line SRC, thereby controlling the current flowing to the corresponding emitter 12.
  • the laser driver IC 20 has, for example, the correction calculation unit 21a, the correction coefficient storage unit 21b, the timing generation unit 21c, the DAC 21d, and the ADC 21e as the above-mentioned drive circuit.
  • the correction calculation unit 21a calculates the monitor temperature Tsi and the junction temperature Tj ( t) A plurality of drive pulses Pc that are continuously output to each of the emitters 12 selected as light emission targets are generated at a pulse interval t1 that is equal to or longer than the time required to match (active layer temperature). Specifically, the correction calculator 21a generates a correction current pulse based on the equation described below, and superimposes the generated correction current pulse on the rectangular basic current pulse Pa generated by the pulse generator 40. As a result, the drive pulse Pc is generated.
  • the correction calculation unit 21a generates a correction current pulse using the values of various correction coefficients input from the correction coefficient storage unit 21b.
  • the correction calculator 21a uses the monitor temperature Tsi input from each temperature sensor 24 to generate a correction current pulse. That is, the monitor temperature Tsi is measured by each temperature sensor 24.
  • the correction calculator 21a outputs the generated plurality of drive pulses Pc to each of the emitters 12 selected as the light emission target at the pulse interval t1 via the DAC 21d.
  • the correction calculator 21a converts the generated plurality of drive pulses Pc into analog drive pulses Pd at a pulse interval t1 and then outputs the analog drive pulses Pd to each emitter 12 selected as a light emission target.
  • the pulse interval t1 is a value within a range of 1 ms or more and 999 ms or less (that is, a value on the ms order), and is, for example, several tens of ⁇ m.
  • the correction coefficient storage unit 21b stores various correction coefficients used in the equations described below.
  • the correction coefficient storage unit 21b outputs various correction coefficients having values corresponding to the number N to the correction calculation unit 21a.
  • the timing generation unit 21c controls the timing of reading the monitor temperature Tsi measured by the temperature sensor 24 and the timing of voltage switching in the voltage source that applies a binary voltage (VDD, VSS) to the power supply line SRC.
  • the timing generation unit 21c outputs, for example, the control pulse Pb to the ADC 21e immediately before the light emission, thereby causing the correction calculation unit 21a to output the digital monitor temperature Tsi immediately before the light emission.
  • the DAC 21d converts the digital drive pulse Pc obtained by the correction calculator 21a into an analog drive pulse Pd.
  • the DAC 21d outputs the analog drive pulse Pd obtained by the conversion to the gate of each switch element Tr1.
  • the DAC 21d outputs the drive pulse Pd generated for each switch element Tr1 to the gate of each switch element Tr1 to which the common power supply line SRC is connected.
  • the ADC 21e converts the analog monitor temperature Tsi measured by the temperature sensor 24 into a digital monitor temperature Tsi.
  • the ADC 21e outputs the monitor temperature Tsi to the correction calculator 21a based on the control pulse Pb input from the timing generator 21c.
  • the ADC 21e converts the analog monitor temperature Tsi immediately before light emission into a digital monitor temperature Tsi based on the control pulse Pb input from the timing generation unit 21c, and outputs the digital monitor temperature Tsi to the correction calculation unit 21a.
  • FIG. 5 shows an example of a planar configuration when the laser driver IC 20 is mounted on the printed wiring board 50.
  • the printed wiring board 50 is provided with, for example, a system controller 30 and a pulse generation unit 40 in addition to the laser driver IC 20.
  • FIG. 6 shows an example of a sectional structure taken along line AA of FIG.
  • a bonding layer 53 is provided between the laser driver IC 20 and the printed wiring board 50. The bonding layer 53 fixes the laser driver IC 20 and the printed wiring board 50 to each other.
  • the bonding layer 53 is made of, for example, an insulating resin material.
  • the laser driver IC 20 and the printed wiring board 50 are electrically connected by a bonding wire 54.
  • One end of the bonding wire 54 is fixed to the connection pad 22c of the laser driver IC 20 by the solder 25, and the other end of the bonding wire 54 is fixed to the connection pad 51 of the printed wiring board 50 by the solder 52. There is.
  • FIG. 7A exemplifies how all the emitters 12 are emitting light.
  • FIG. 8A and FIG. 9A exemplify a state in which only some emitters 12 emit light.
  • 7 (B), 8 (B), and 9 (B) show that the correction coefficient Ck is assigned to each section in FIGS. 7 (A), 8 (A), and 9 (A). It is a representation.
  • the correction coefficient Ck is used when generating the above-mentioned drive pulse Pc.
  • the correction coefficient Ck has, for example, a different value for each section (that is, according to the position), and further has a different value according to the number of emitters 12 emitting light in the section. Therefore, the correction coefficient Ck is represented by a function having the partition (position) and the number of emitters 12 emitting light in the partition as variables.
  • FIG. 10 shows the simulation result of the junction temperature Tj (t) (active layer temperature).
  • Tj (t) active layer temperature
  • 400 emitters are selected at approximately equal intervals, and a current pulse of 6 mA with a pulse width of 4 ms and a duty ratio of 30% is selected for the selected 400 emitters.
  • the change over time of the junction temperature Tj (t) (active layer temperature) when the voltage is applied is illustrated.
  • the change in the junction temperature Tj (t) (active layer temperature) shown in FIG. 10 can be expressed using a thermal time constant.
  • the change in the junction temperature Tj (t) (active layer temperature) shown in FIG. 10 can be described by using a plurality of thermal time constants as shown in FIG.
  • the optical output is uniquely determined by the current flowing through the emitter and the junction temperature Tj (t) (active layer temperature).
  • Tj (t) active layer temperature
  • a 400 mA emitter is supplied with a 6 mA current pulse with a pulse width of 4 ms and a duty ratio of 30% (basic current pulse).
  • the change with time of the optical output Po (t) when applied is shown in FIG. 12, for example.
  • the correction current pulse as shown in FIG. 13 superposed on the basic current pulse is applied to the emitter, the correction current pulse further increases the junction temperature Tj (active layer temperature) as shown in FIG. 14, for example. I will end up.
  • Tj active layer temperature
  • the light output at this time is not yet rectangular as shown by the arrow (a) in FIG. Therefore, an additional correction current is further required.
  • the correction current pulse at this time is, for example, as shown in FIG.
  • the correction current pulse (hereinafter, referred to as “ideal correction current pulse”) for rectangularizing the light output is obtained.
  • ideal correction current pulse a huge amount of calculation is required, so that it is difficult to provide the laser driver IC 20 with a circuit for performing such calculation. Therefore, it is necessary to simplify the process of deriving an ideal correction current pulse. Therefore, a method for simplifying the process of deriving an ideal correction current pulse will be described below.
  • FIG. 17 and FIG. 18 show that 200 emitters are selected at approximately equal intervals from all 800 emitters (20 ⁇ 40, 20 ⁇ m pitch), and the selected 200 emitters have a pulse width of 4 ms and a duty ratio of 30% of 6 mA. It shows the waveforms of the first and thirtieth waves of the ideal correction current pulse when the current pulse is applied.
  • 400 emitters are selected at approximately equal intervals from all 800 emitters (20 ⁇ 40, 20 ⁇ m pitch), and the selected 400 emitters have a pulse width of 4 ms and a duty ratio of 30% of 6 mA. It shows the waveforms of the first and thirtieth waves of the ideal correction current pulse when the current pulse is applied.
  • the waveform changes at "1-exp" close to the thermal time constant described in the thermal time constant model.
  • the correction current with a small time constant immediately after light emission does not differ significantly between the 200 emitter and the 400 emitter. This means that in the initial stage of light emission, the heat generated by light emission in the periphery has not yet been transmitted. 3.
  • the correction current component having a large time constant that mainly changes. 4.
  • all time constant components are large. This means that more correction current is required due to the rise in the active layer temperature.
  • the corrected current model can be expressed as follows.
  • TAk k-th current correction time constant N: number of light emitting emitters
  • Tj junction temperature immediately before light emission (active layer temperature)
  • the initial value of the correction current is determined by the number of light-emitting emitters and the junction temperature Tj (active layer temperature). The correction current increases accordingly.
  • the temperature sensor 24 is installed on the surface layer of the laser driver IC 20, and the heat transfer time (thermal time constant) from each emitter 12 to the temperature sensor 24 is the pulse-off period (pulse interval t1). Smaller than. Therefore, when the pulse-off time (pulse interval t1) elapses for several ms, the junction temperature Tj (t) (active layer temperature) drops to the monitor temperature Tsi, for example, as shown in FIG. Also, it can be seen that the minimum value of the junction temperature Tj (t) (active layer temperature) gradually increases in accordance with the envelope of the thermal time constant of 80 ms, but this change is static for one pulse. Therefore, it is not necessary to handle the change in the light amount according to the thermal time constant of 80 ms in the correction current formula (see FIG. 11).
  • the temperature change in the housing need not be included in the correction current formula because it is static with respect to the pulse operation. After all, regarding the temperature, it suffices that the monitor temperature Tsi immediately before the light emission is known regardless of the temperature inside the housing at that time, so the correction current formula can be rewritten as follows.
  • the correction current becomes constant regardless of the number of pulses, so that the rectangular optical waveform is only in the heat saturation state (only in the latter half pulse). can get.
  • Overcorrection occurs in the first half of the pulse where the junction temperature Tj (t) (active layer temperature) is low (see FIG. 23).
  • the F (Tsi) function corrects the optical waveform from the start of pulse input to thermal saturation, and the F (Tsi) function for approximating the ideal correction current is approximately a quadratic function.
  • the laser driver 1C20 simultaneously drives a part of the emitters 12 included in the emitter array 11 so as to have the emission profile shown in FIG. 8 or 9, for example. ..
  • the laser driver 1C20 determines the monitor temperature Tsi and the junction temperature after the light emission based on the number N of the emitters 12 selected as the light emission targets and the monitor temperature Tsi immediately before the light emission of each emitter 12 selected as the light emission target.
  • a plurality of drive pulses Pc that are continuously output to each of the emitters 12 selected for light emission are generated at a pulse interval t1 that is longer than the time required to match Tj (t) (active layer temperature). ..
  • the laser driver 1C20 generates a correction current pulse based on the formula described in the paragraph immediately before the two, and the generated correction current pulse is a rectangular basic pulse generated by the pulse generation unit 40.
  • the drive pulse Pc is generated by superimposing it on Pa.
  • the laser driver 1C20 outputs the generated plurality of drive pulses Pc to each of the emitters 12 selected as light emission targets at the pulse interval t1 via the DAC 21d.
  • the laser driver 1C20 converts the generated plurality of drive pulses Pc into a plurality of analog drive pulses Pd, and then outputs the plurality of drive pulses Pd to the respective emitters 12 selected as light emission targets at the pulse interval t1.
  • a plurality of drive pulses Pd that are continuously output to each emitter 12 selected as an emission target are generated.
  • the plurality of drive pulses Pd are selected as light emission targets at a pulse interval t1 that is longer than or equal to the time required for the monitor temperature Tsi and the junction temperature Tj (t) (active layer temperature) of the emitter 12 to match after light emission. It is output to each emitter 12.
  • the junction of the emitter 12 is substantially detected.
  • the temperature Tj (t) can be measured. Therefore, the junction temperature Tj (t) of the emitter 12 can be accurately measured. As a result, it is possible to suppress a decrease in emission intensity due to thermal crosstalk.
  • the laser light emitted from each of the emitters 12 is reflected by the human face, and the light reflected by the human face is detected by the CMOS image sensor to perform stable face authentication with less authentication error. be able to.
  • the pulse interval t1 is on the order of ms.
  • the pulse interval t1 is on the order of ms.
  • the monitor temperature Tsi is measured by the temperature sensor 24 arranged at a position where the thermal time constant ⁇ from the active layer 12D of each emitter 12 is shorter than the pulse interval t1.
  • the junction temperature Tj (t) of the emitter 12 can be substantially measured.
  • the junction temperature Tj (t) of the emitter 12 can be accurately measured. Therefore, stable face authentication with few authentication errors can be performed.
  • FIG. 25 shows an optical waveform when the backside temperature Tbs of the laser driver IC 20 is changed from ⁇ 10 ° C. to 40 ° C. and the number of light emitting emitters is changed to 200, 300 and 400 for each temperature condition. Represents the correction accuracy of.
  • FIG. 26 shows the result of performing the same evaluation on the emitter 12 in the peripheral portion. Although only the parameter of Ck (N) was finely adjusted, the correction accuracy was similarly suppressed to about 2%. Therefore, regardless of the temperature environment and the number of light emitting emitters set, stable face authentication with few authentication errors can be performed.
  • FIG. 27 shows a planar configuration example when the laser chip 10 is arranged on the temperature sensor unit 60.
  • FIG. 28 shows an example of a sectional structure taken along the line AA of FIG.
  • the laser chip 10 may be arranged on the temperature sensor unit 60 instead of the laser driver IC 20.
  • the laser driver IC 20 is mounted on the surface of the printed wiring board 50 at a position not facing the laser chip 10.
  • the temperature sensor unit 60 has, for example, a Si substrate 61 and a wiring layer 62 provided on the Si substrate 61. A plurality of temperature sensors 24 are formed on the Si substrate 61.
  • the wiring layer 62 has the same configuration as the wiring layer 22 according to the above-described embodiment.
  • Each temperature sensor 24 is arranged on the Si substrate 61 at a position facing the laser chip 10. Each temperature sensor 24 is further arranged at a position where the thermal time constant ⁇ between the active layer 12D of each emitter 12 and each temperature sensor 24 is shorter than the pulse interval t1. Each temperature sensor 24 is further arranged at a position where the thermal time constant ⁇ is shorter than t1-t2. Therefore, in the surface emitting laser device 1 according to the present modification, the same effect as that of the above-described embodiment can be obtained.
  • FIG. 29 shows a planar configuration example when the laser chip 10 is arranged on the temperature sensor unit 70.
  • FIG. 30 shows an example of a sectional structure taken along the line AA of FIG.
  • the laser chip 10 may be arranged on the temperature sensor unit 70 instead of the laser driver IC 20.
  • the laser driver IC 20 is mounted on the surface of the printed wiring board 50 at a position not facing the laser chip 10.
  • the temperature sensor unit 70 has, for example, a heat sink 71 (structure) and a wiring layer 72 provided on the heat sink 71.
  • a plurality of temperature sensors 24 are formed on the wiring layer 72.
  • Each temperature sensor 24 is composed of, for example, a temperature device such as a thermistor.
  • Each temperature sensor 24 is arranged in the wiring layer 72 at a position facing the laser chip 10. Each temperature sensor 24 is further arranged at a position where the thermal time constant ⁇ between the active layer 12D of each emitter 12 and each temperature sensor 24 is shorter than the pulse interval t1. Each temperature sensor 24 is further arranged at a position where the thermal time constant ⁇ is shorter than t1-t2. Therefore, in the surface emitting laser device 1 according to the present modification, the same effect as that of the above-described embodiment can be obtained.
  • FIG. 31 illustrates a modification of the planar configuration of the surface emitting laser device 1 according to the first embodiment.
  • FIG. 32 shows an example of a sectional structure taken along the line AA in FIG.
  • the emitter array 11 is formed on the surface of the substrate 14 on the printed wiring board 50 side.
  • the emitter array 11 may be formed on the surface of the substrate 14 opposite to the printed wiring board 50.
  • the laser chip 10 may be mounted on the printed wiring board 50.
  • the laser chip 10 is fixed to the printed wiring board 50 by the bonding layer 55, for example, as shown in FIG.
  • the bonding layer 55 is made of, for example, conductive solder.
  • the n-type semiconductor substrate of the substrate 14 has the same potential as the reference potential of the laser driver IC 20 via the printed wiring board 50, for example.
  • each emitter 12 includes, for example, as shown in FIG. 33, a contact layer 12A, a DBR layer 12B, a spacer layer 12C, an active layer 12D, a spacer layer 12E, a current constriction layer 12F, a DBR layer 12G, and a contact.
  • the columnar vertical resonator structure is formed by stacking the layers 12J in this order.
  • each emitter 12 is, for example, a semiconductor substrate that is obtained by removing the semiconductor substrate from the one in which the vertical resonator structure is formed by crystal growth on a separately prepared semiconductor substrate.
  • the contact layer 12A is electrically connected to the n-type semiconductor substrate of the substrate 14, for example.
  • Each emitter 12 further has, for example, as shown in FIG. 33, a ring-shaped electrode layer 12K on the upper surface of the contact layer 12J.
  • Each emitter 12 emits a laser beam from a portion of the upper surface of the contact layer 12J exposed in the opening of the electrode layer 12K.
  • the electrode layer 12K is configured by laminating a Ti layer, a Pt layer, and an Au layer in this order, and is electrically connected to the contact layer 12J.
  • the electrode layer 12K is connected to the connection pad 26 via, for example, a metal wiring.
  • the connection pad 26 and the metal wiring connected to the connection pad 26 are formed on the surface of the substrate 14 opposite to the printed wiring board 50, and are insulated and separated from the n-type semiconductor substrate of the substrate 14. ..
  • connection pad 26 is connected to the bonding wire 27, for example.
  • One end of the bonding wire 27 is connected to the connection pad 26, and the other end of the bonding wire 27 is connected to the connection pad 22C provided on the laser driver IC 20.
  • the electrode layer 12K is connected to the switch element Tr1 in the laser driver IC 20.
  • the laser chip 10 is provided with one or more temperature sensors 24.
  • the one or more temperature sensors 24 are configured by, for example, photodiodes or polysilicon resistors.
  • the one or more temperature sensors 24 are formed, for example, on the surface of the board 14 opposite to the printed wiring board 50.
  • the one or more temperature sensors 24 are arranged around the emitter array 11 on the surface of the substrate 14 on the side opposite to the printed wiring board 50, for example. It should be noted that the one or more temperature sensors 24 may be arranged inside the emitter array 11 on the surface of the substrate 14 opposite to the printed wiring board 50.
  • the one or more temperature sensors 24 are connected to the connection pads 26 via, for example, metal wiring.
  • the one or more temperature sensors 24 are arranged at positions where the thermal time constant ⁇ between the active layer 12D of each emitter 12 and the temperature sensor 24 is shorter than the pulse interval t1.
  • the thermal time constant ⁇ indicates, for example, the time required for the temperature difference between the active layer 12D of each emitter 12 and the one or more temperature sensors 24 to become 1 / e.
  • the one or more temperature sensors 24 are further arranged at positions where the thermal time constant ⁇ is shorter than t1-t2.
  • t2 is a period t2 in which the monitor temperature Tsi is read from the temperature sensor 24 immediately before the light emission. Accordingly, the one or more temperature sensors 24 can measure a temperature that is equal to or approximately equal to the junction temperature Tj (t) (active layer temperature) immediately before the light emission of each emitter 12.
  • the positional relationship between the emitter array 11 and the temperature sensor 24 becomes the same as that of the above-described embodiment in terms of the thermal time constant ⁇ as the arrangement of the emitter array 11 is changed.
  • the arrangement of the temperature sensor 24 has been changed.
  • the configuration of each emitter 12 and the connection mode between each emitter 12 and the laser driver IC 20 are changed so that each emitter 12 can be driven independently. Therefore, in this modification, the same effect as that of the above-described embodiment can be obtained.
  • the plurality of emitters 12 forming the emitter array 11 are divided into nine sections, but the number of the plurality of emitters 12 to be sectioned is nine. It is not limited to. Further, in the surface-emission laser device 1 according to the above-described embodiment and its modification, one temperature sensor 24 is provided for each section, but only one temperature sensor 24 is provided for the surface-emission laser device 1. It may be provided. In this case, it is preferable that the temperature of the portion of the laser driver IC 20, the temperature sensor unit 60, and the temperature sensor unit 70 that faces the emitter array 11 be so uniform that it can be ignored in current correction.
  • the present technology may have the following configurations. (1) Based on the number of the surface emitting lasers selected as the light emitting target among the plurality of surface emitting lasers arranged on the same substrate and the monitor temperature immediately before the light emission of each of the surface emitting lasers selected as the light emitting target. Generating a plurality of drive pulses that are continuously output to each of the surface emitting lasers selected as light emitting targets, Outputting the generated plurality of drive pulses to each of the surface emitting lasers selected as light emitting targets. (2) The pulse interval of the plurality of drive pulses is on the order of ms.
  • Driving method (4) A plurality of surface emitting lasers arranged on the same substrate, A drive circuit for driving the plurality of surface emitting lasers, Among the plurality of surface emitting lasers, the drive circuit is based on the number of the surface emitting lasers selected as the light emitting target and the monitor temperature immediately before the light emission of each of the surface emitting lasers selected as the light emitting target, After generating a plurality of drive pulses that are continuously output to each of the surface emitting lasers selected as a light emitting target, the generated plurality of drive pulses are generated for each of the surface emitting lasers selected as a light emitting target.
  • the surface emitting laser device that outputs (5)
  • the pulse interval of the plurality of drive pulses is on the order of ms.
  • (6) The surface emitting device according to (4) or (5), further comprising a temperature sensor arranged at a position where a thermal time constant from the active layer of each of the surface emitting lasers is shorter than the pulse interval and for measuring the monitor temperature. Laser device.
  • each surface-emission selected as a light-emission target based on the number of surface-emission lasers to be emitted and the monitor temperature. Since a plurality of drive pulses that are continuously output to the laser are generated, it is possible to suppress a decrease in emission intensity due to thermal crosstalk. Note that the effects of the present disclosure are not necessarily limited to the effects described here, and may be any effects described in the present specification.

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US17/286,540 US12009638B2 (en) 2018-11-16 2019-10-29 Surface emission laser driving method and surface emission laser device
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