JP7407896B2 - 遠隔プラズマ膜堆積におけるウエハレベル均一性制御 - Google Patents
遠隔プラズマ膜堆積におけるウエハレベル均一性制御 Download PDFInfo
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- JP7407896B2 JP7407896B2 JP2022185486A JP2022185486A JP7407896B2 JP 7407896 B2 JP7407896 B2 JP 7407896B2 JP 2022185486 A JP2022185486 A JP 2022185486A JP 2022185486 A JP2022185486 A JP 2022185486A JP 7407896 B2 JP7407896 B2 JP 7407896B2
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
Description
[適用例1]
ウエハ上に膜を堆積させるためにプロセスチャンバ内で使用するためのアセンブリであって、
台座であって、前記台座の中心軸から外縁まで広がる台座上面を有し、前記台座上面は、前記台座上面よりも上方のウエハ支持レベルでウエハを支持するように構成された複数のウエハサポートを有する、台座と、
前記台座の台座段差であって、段差内径と、前記段差内径から前記台座の前記外縁に向かって広がる段差表面とを有する台座段差と、
前記段差表面上に載るように構成されたフォーカスリングであって、前記フォーカスリングの外径からメサ内径まで広がるメサを有し、前記メサ内径においてメサ表面から下向きに下がる棚を有し、前記棚は、前記メサ内径と、前記フォーカスリングの内径との間に広がる、フォーカスリングと、
を備え、
前記棚は、処理時に前記ウエハのウエハ底面の少なくとも一部分を支持するように構成される、アセンブリ。
[適用例2]
適用例1に記載のアセンブリであって、
リング底面からの棚高さは、前記台座段差の段差高さよりも小さい、アセンブリ。
[適用例3]
適用例1に記載のアセンブリであって、
リング底面からの棚高さは、前記台座段差の段差高さにおおよそ等しい、アセンブリ。
[適用例4]
適用例1に記載のアセンブリであって、
リング底面からの棚高さは、前記台座段差の段差高さよりも大きい、アセンブリ。
[適用例5]
適用例1に記載のアセンブリであって、
リング底面から前記メサ表面までの前記フォーカスリングの高さと、前記リング底面からの棚高さとの間の差は、0.033インチ(0.08382センチメートル)以下である、アセンブリ。
[適用例6]
適用例1に記載のアセンブリであって、
前記フォーカスリングの前記内径と、前記段差内径との間の差は、0.078インチ(0.19812センチメートル)未満である、アセンブリ。
[適用例7]
適用例1に記載のアセンブリであって、
前記ウエハ支持レベルは、0.005インチ(0.0127センチメートル)から0.015インチ(0.0381センチメートル)の範囲である、アセンブリ。
[適用例8]
適用例1に記載のアセンブリであって、更に、
前記台座内に構成された複数の台座シャフトを通る複数のリフトピンを含むリフトピンアセンブリを備えるアセンブリ。
[適用例9]
適用例1に記載のアセンブリであって、
前記台座の前記段差内径から前記外縁までの前記台座の外側リング、及び前記フォーカスリングは、ともに、基本的にイットリア、ALN、ALO x 、ALON、SiC、及びガラスからなる群から選択された材料を含む、アセンブリ。
[適用例10]
ウエハ上に膜を堆積させるためにプロセスチャンバ内で使用するためのアセンブリであって、
台座であって、前記台座の中心軸から外縁まで広がる台座上面を有し、前記台座上面は、前記台座上面よりも上方のウエハ支持レベルでウエハを支持するように構成された複数のウエハサポートを有する、台座と、
前記台座の台座段差であって、段差内径と、前記段差内径から前記台座の前記外縁に向かって広がる段差表面とを有し、前記台座上面から下方に伸びる段差高さを有する台座段差と、
前記段差表面上に載るように構成されたフォーカスリングであって、前記フォーカスリングの外径からメサ内径まで広がるメサを有し、前記メサ内径においてメサ表面から下向きに下がる棚を有し、前記棚は、前記メサ内径と、前記フォーカスリングの内径との間に広がる、フォーカスリングと、
を備え、
リング底面からの棚高さは、0.143インチ(0.36322センチメートル)から0.188インチ(0.47752センチメートル)の範囲である、アセンブリ。
[適用例11]
適用例10に記載のアセンブリであって、
前記棚高さは、おおよそ0.155インチ(0.3937センチメートル)である、アセンブリ。
[適用例12]
適用例10に記載のアセンブリであって、
リング底面から前記メサ表面までの前記フォーカスリングの高さと、前記リング底面からの棚高さとの間の差は、0.033インチ(0.08382センチメートル)以下である、アセンブリ。
[適用例13]
適用例10に記載のアセンブリであって、
前記フォーカスリングの前記内径と、前記段差内径との間の差は、0.078インチ(0.19812センチメートル)未満である、アセンブリ。
[適用例14]
適用例10に記載のアセンブリであって、
前記ウエハ支持レベルは、0.005インチ(0.0127センチメートル)から0.015インチ(0.0381センチメートル)の範囲である、アセンブリ。
[適用例15]
適用例10に記載のアセンブリであって、更に、
前記台座内に構成された複数の台座シャフトを通る複数のリフトピンを含むリフトピンアセンブリを備えるアセンブリ。
[適用例16]
適用例10に記載のアセンブリであって、
前記台座の前記段差内径から前記外縁までの前記台座の外側リング、及び前記フォーカスリングは、ともに、基本的にイットリア、ALN、ALO x 、ALON、SiC、及びガラスからなる群から選択された材料を含む、アセンブリ。
[適用例17]
ウエハ上に膜を堆積させるためにプロセスチャンバ内で使用するためのアセンブリであって、
台座であって、前記台座の中心軸から外縁まで広がる台座上面を有し、前記台座上面は、前記台座上面よりも上方のウエハ支持レベルでウエハを支持するように構成された複数のウエハサポートを有する、台座と、
前記台座上面の前記外縁上に構成され、前記台座上に載っている前記ウエハの、側方への動きを阻むように構成された隆起環状へりであって、前記台座上面よりも上方に隆起したメサ表面を有し、前記隆起環状へり及び前記台座上面は、前記ウエハを受けるように構成されたポケットを形成する、隆起環状へりと、
前記隆起環状へりの内径から前記台座上面上の前記ポケットの外径まで広がる傾斜表面であって、前記台座上面に対して90度未満の角度で傾いている傾斜表面と、
を備えるアセンブリ。
[適用例18]
適用例17に記載のアセンブリであって、
前記傾斜表面は、前記台座上面に対して垂直に近い、アセンブリ。
[適用例19]
適用例17に記載のアセンブリであって、
前記ウエハ支持レベルは、0.005インチ(0.0127センチメートル)から0.015インチ(0.0381センチメートル)の範囲である、アセンブリ。
[適用例20]
適用例17に記載のアセンブリであって、
前記隆起環状へりの前記内径は、11.968インチ(30.39872センチメートル)未満である、アセンブリ。
[適用例21]
適用例17に記載のアセンブリであって、更に、
前記台座内に構成された複数の台座シャフトを通る複数のリフトピンを含むリフトピンアセンブリを備えるアセンブリ。
[適用例22]
適用例17に記載のアセンブリであって、
前記隆起環状へりを形成している前記台座の外側リングは、基本的にイットリア、ALN、ALO x 、ALON、SiC、及びガラスからなる群から選択された材料を含む、アセンブリ。
Claims (17)
- プロセスチャンバ内で使用するための台座アセンブリであって、
第1の平面に沿って水平に配向された台座上面を含む台座であって、前記台座上面は、前記台座上面よりも上方のウエハ支持レベルでウエハを支持するように構成された複数のウエハサポートを有する、台座と、
前記台座上面から突き出し、前記台座上面の外縁に配置された隆起環状へりであって、第2の平面に沿って水平に配向され、前記台座上面よりも上方に持ち上げられたメサ表面を備え、前記隆起環状へり及び前記台座上面は、前記ウエハを受けるように構成されたポケットを画定する、隆起環状へりと、
前記メサ表面から前記台座上面まで広がる傾斜表面であって、前記台座上面に対して90度未満の角度で傾いている傾斜表面と、
を備え、
前記ポケットの外径は、前記台座に対する前記ウエハのウエハエッジの密封を促すように構成される、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記台座の前記外縁は、イットリア、窒化アルミニウム、酸化アルミニウム、酸窒化アルミニウム、炭化ケイ素、及びガラスからなる群から選択された材料を含む、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記メサ表面は、前記ポケットの外径から、前記メサ表面を前記台座の前記外縁に結合する湾曲表面まで広がり、前記台座の前記外縁は、前記メサ表面に対して垂直に配向される、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記ポケットの前記外径は、11.968インチ(30.39872センチメートル)である、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記隆起環状へりの内径は、11.968インチ(30.39872センチメートル)未満である、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、更に、
前記台座内に配置された複数の台座シャフトを通る複数のリフトピンを含むリフトピンアセンブリを備える、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記台座上面に対する前記傾斜表面の前記角度は、60度である、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記ポケットの高さは、前記台座に対する前記ウエハのウエハエッジの密封を促すように構成される、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記ポケットの高さは、0.35インチ(0.889センチメートル)である、台座アセンブリ。 - 請求項1に記載の台座アセンブリであって、
前記隆起環状へりは、前記ウエハの側方への動きを制限するように構成される、台座アセンブリ。 - プロセスチャンバ内で使用するための台座アセンブリであって、
第1の平面に沿って水平に配向された台座上面を含む台座であって、前記台座上面は、前記台座上面よりも上方のウエハ支持レベルでウエハを支持するように構成された複数のウエハサポートを有する、台座と、
前記台座上面から突き出し、前記台座上面の外縁に配置された隆起環状へりであって、第2の平面に沿って水平に配向され、前記台座上面よりも上方に持ち上げられたメサ表面を備え、前記隆起環状へり及び前記台座上面は、前記ウエハを受けるように構成されたポケットを画定する、隆起環状へりと、
前記メサ表面から前記台座上面まで広がる傾斜表面であって、前記台座上面に対して90度未満の角度で傾いている傾斜表面と、
を備え、
前記ポケットの高さは、前記台座に対する前記ウエハのウエハエッジの密封を促すように構成される、台座アセンブリ。 - 請求項11に記載の台座アセンブリであって、
前記メサ表面は、前記ポケットの外径から、前記メサ表面を前記台座の前記外縁に結合する湾曲表面まで広がり、前記台座の前記外縁は、前記メサ表面に対して垂直に配向される、台座アセンブリ。 - 請求項11に記載の台座アセンブリであって、
前記隆起環状へりの内径は、11.968インチ(30.39872センチメートル)未満である、台座アセンブリ。 - 請求項11に記載の台座アセンブリであって、更に、
前記台座内に配置された複数の台座シャフトを通る複数のリフトピンを含むリフトピンアセンブリを備える、台座アセンブリ。 - 請求項11に記載の台座アセンブリであって、
前記台座上面に対する前記傾斜表面の前記角度は、60度である、台座アセンブリ。 - 請求項11に記載の台座アセンブリであって、
前記ポケットの高さは、0.35インチ(0.889センチメートル)である、台座アセンブリ。 - 請求項11に記載の台座アセンブリであって、
前記隆起環状へりは、前記ウエハの側方への動きを制限するように構成される、台座アセンブリ。
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US11702748B2 (en) * | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
JP2020017700A (ja) * | 2018-07-27 | 2020-01-30 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理制御方法 |
US20220162749A1 (en) * | 2019-02-08 | 2022-05-26 | Lam Research Corporation | Pedestals for modulating film properties in atomic layer deposition (ald) substrate processing chambers |
USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
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CN117957646A (zh) | 2021-08-20 | 2024-04-30 | Mrsi系统有限公司 | 具有晶片提升与调平组合件的裸片接合系统 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2001525495A (ja) | 1997-12-02 | 2001-12-11 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバおよびプラズマを閉じ込めるための方法 |
JP2001527285A (ja) | 1997-12-19 | 2001-12-25 | ラム リサーチ コーポレーション | フォーカスリングおよびそのための方法 |
JP2002502555A (ja) | 1997-06-03 | 2002-01-22 | アプライド マテリアルズ インコーポレイテッド | 一体型イオンフォーカスリングを有する静電支持組立体 |
JP2002134484A (ja) | 2000-10-19 | 2002-05-10 | Asm Japan Kk | 半導体基板保持装置 |
JP2008103403A (ja) | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | 基板載置台及びプラズマ処理装置 |
JP2011108816A (ja) | 2009-11-17 | 2011-06-02 | Tokyo Electron Ltd | 基板処理装置の基板載置台 |
JP3172327U (ja) | 2010-10-07 | 2011-12-15 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP2013528943A (ja) | 2011-04-13 | 2013-07-11 | ノベルス・システムズ・インコーポレーテッド | ペデスタルカバー |
US20160177444A1 (en) | 2014-12-19 | 2016-06-23 | Lam Research Corporation | Reducing backside deposition at wafer edge |
JP2017017316A (ja) | 2015-06-30 | 2017-01-19 | ラム リサーチ コーポレーションLam Research Corporation | 縁における膜厚の均一性を向上させるための、プラズマの抑制とウエハの縁との分離 |
Family Cites Families (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100297358B1 (ko) | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | 플라즈마에칭장치 |
US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
JP3257741B2 (ja) | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | プラズマエッチング装置及び方法 |
JP2659919B2 (ja) | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | プラズマの不均一性を補正するプラズマ装置 |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
US6197117B1 (en) * | 1997-07-23 | 2001-03-06 | Applied Materials, Inc. | Wafer out-of-pocket detector and susceptor leveling tool |
US6200388B1 (en) | 1998-02-11 | 2001-03-13 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
US6596086B1 (en) * | 1998-04-28 | 2003-07-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for thin film growth |
US6146504A (en) * | 1998-05-21 | 2000-11-14 | Applied Materials, Inc. | Substrate support and lift apparatus and method |
US6184154B1 (en) * | 1999-10-13 | 2001-02-06 | Seh America, Inc. | Method of processing the backside of a wafer within an epitaxial reactor chamber |
US7024105B2 (en) * | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
KR20070009159A (ko) | 2005-07-15 | 2007-01-18 | 삼성전자주식회사 | 플라즈마 식각설비의 웨이퍼 서셉터 |
JP4888143B2 (ja) | 2007-02-05 | 2012-02-29 | 三菱電機株式会社 | T分岐導波管およびアレーアンテナ |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
KR101516164B1 (ko) * | 2007-12-28 | 2015-05-04 | 신에쯔 한도타이 가부시키가이샤 | 에피텍셜 성장용 서셉터 |
US20130000848A1 (en) * | 2011-07-01 | 2013-01-03 | Novellus Systems Inc. | Pedestal with edge gas deflector for edge profile control |
US20130025538A1 (en) * | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
JP5704461B2 (ja) * | 2012-02-24 | 2015-04-22 | 信越半導体株式会社 | 枚葉式エピタキシャルウェーハ製造装置およびそれを用いたエピタキシャルウェーハの製造方法 |
US9245841B2 (en) | 2012-07-19 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and fabricating process for the same |
JP6287778B2 (ja) * | 2014-11-21 | 2018-03-07 | 信越半導体株式会社 | エピタキシャルウェーハの製造方法 |
US10242848B2 (en) | 2014-12-12 | 2019-03-26 | Lam Research Corporation | Carrier ring structure and chamber systems including the same |
CN107112275B (zh) | 2014-12-19 | 2020-10-30 | 应用材料公司 | 用于基板处理腔室的边缘环 |
JP6320945B2 (ja) * | 2015-01-30 | 2018-05-09 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
US20160289827A1 (en) | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
JP6424726B2 (ja) * | 2015-04-27 | 2018-11-21 | 株式会社Sumco | サセプタ及びエピタキシャル成長装置 |
TWI729101B (zh) * | 2016-04-02 | 2021-06-01 | 美商應用材料股份有限公司 | 用於旋轉料架基座中的晶圓旋轉的設備及方法 |
US11702748B2 (en) * | 2017-03-03 | 2023-07-18 | Lam Research Corporation | Wafer level uniformity control in remote plasma film deposition |
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Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002502555A (ja) | 1997-06-03 | 2002-01-22 | アプライド マテリアルズ インコーポレイテッド | 一体型イオンフォーカスリングを有する静電支持組立体 |
JP2001525495A (ja) | 1997-12-02 | 2001-12-11 | アプライド マテリアルズ インコーポレイテッド | 処理チャンバおよびプラズマを閉じ込めるための方法 |
JP2001527285A (ja) | 1997-12-19 | 2001-12-25 | ラム リサーチ コーポレーション | フォーカスリングおよびそのための方法 |
JP2002134484A (ja) | 2000-10-19 | 2002-05-10 | Asm Japan Kk | 半導体基板保持装置 |
JP2008103403A (ja) | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | 基板載置台及びプラズマ処理装置 |
JP2011108816A (ja) | 2009-11-17 | 2011-06-02 | Tokyo Electron Ltd | 基板処理装置の基板載置台 |
JP3172327U (ja) | 2010-10-07 | 2011-12-15 | 日本碍子株式会社 | 半導体製造装置用部材 |
JP2013528943A (ja) | 2011-04-13 | 2013-07-11 | ノベルス・システムズ・インコーポレーテッド | ペデスタルカバー |
US20160177444A1 (en) | 2014-12-19 | 2016-06-23 | Lam Research Corporation | Reducing backside deposition at wafer edge |
JP2017017316A (ja) | 2015-06-30 | 2017-01-19 | ラム リサーチ コーポレーションLam Research Corporation | 縁における膜厚の均一性を向上させるための、プラズマの抑制とウエハの縁との分離 |
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TW202305175A (zh) | 2023-02-01 |
CN108546934A (zh) | 2018-09-18 |
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JP2024037955A (ja) | 2024-03-19 |
KR102502273B1 (ko) | 2023-02-20 |
SG10202109658QA (en) | 2021-10-28 |
KR20230029729A (ko) | 2023-03-03 |
KR20180101243A (ko) | 2018-09-12 |
JP7182367B2 (ja) | 2022-12-02 |
SG10201801701PA (en) | 2018-10-30 |
JP2023018054A (ja) | 2023-02-07 |
TWI780119B (zh) | 2022-10-11 |
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US20180251893A1 (en) | 2018-09-06 |
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