SG10202109658QA - Wafer level uniformity control in remote plasma film deposition - Google Patents
Wafer level uniformity control in remote plasma film depositionInfo
- Publication number
- SG10202109658QA SG10202109658QA SG10202109658QA SG10202109658QA SG 10202109658Q A SG10202109658Q A SG 10202109658QA SG 10202109658Q A SG10202109658Q A SG 10202109658QA SG 10202109658Q A SG10202109658Q A SG 10202109658QA
- Authority
- SG
- Singapore
- Prior art keywords
- film deposition
- wafer level
- remote plasma
- plasma film
- uniformity control
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68742—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a lifting arrangement, e.g. lift pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US15/449,333 US11702748B2 (en) | 2017-03-03 | 2017-03-03 | Wafer level uniformity control in remote plasma film deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
SG10202109658QA true SG10202109658QA (en) | 2021-10-28 |
Family
ID=63357272
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201801701PA SG10201801701PA (en) | 2017-03-03 | 2018-03-01 | Wafer level uniformity control in remote plasma film deposition |
SG10202109658Q SG10202109658QA (en) | 2017-03-03 | 2018-03-01 | Wafer level uniformity control in remote plasma film deposition |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG10201801701PA SG10201801701PA (en) | 2017-03-03 | 2018-03-01 | Wafer level uniformity control in remote plasma film deposition |
Country Status (6)
Country | Link |
---|---|
US (2) | US11702748B2 (en) |
JP (3) | JP7182367B2 (en) |
KR (2) | KR102502273B1 (en) |
CN (1) | CN108546934A (en) |
SG (2) | SG10201801701PA (en) |
TW (2) | TWI780119B (en) |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2020017700A (en) * | 2018-07-27 | 2020-01-30 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing control method |
US20220162749A1 (en) * | 2019-02-08 | 2022-05-26 | Lam Research Corporation | Pedestals for modulating film properties in atomic layer deposition (ald) substrate processing chambers |
USD884855S1 (en) * | 2019-10-30 | 2020-05-19 | Applied Materials, Inc. | Heater pedestal |
CN114096972A (en) * | 2020-06-15 | 2022-02-25 | 株式会社日立高新技术 | Device diagnosis device, device diagnosis method, plasma processing device, and semiconductor device manufacturing system |
WO2023022736A1 (en) * | 2021-08-20 | 2023-02-23 | Mrsi Systems Llc | Die bonding system with wafer lift and level assembly |
Family Cites Families (37)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100297358B1 (en) | 1991-07-23 | 2001-11-30 | 히가시 데쓰로 | Plasma Etching Equipment |
US5366585A (en) | 1993-01-28 | 1994-11-22 | Applied Materials, Inc. | Method and apparatus for protection of conductive surfaces in a plasma processing reactor |
JP3257741B2 (en) | 1994-03-03 | 2002-02-18 | 東京エレクトロン株式会社 | Plasma etching apparatus and method |
JP2659919B2 (en) | 1994-01-13 | 1997-09-30 | インターナショナル・ビジネス・マシーンズ・コーポレイション | Plasma device for correcting non-uniformity of plasma |
US5885356A (en) | 1994-11-30 | 1999-03-23 | Applied Materials, Inc. | Method of reducing residue accumulation in CVD chamber using ceramic lining |
US5558717A (en) | 1994-11-30 | 1996-09-24 | Applied Materials | CVD Processing chamber |
US6113702A (en) * | 1995-09-01 | 2000-09-05 | Asm America, Inc. | Wafer support system |
US5986874A (en) | 1997-06-03 | 1999-11-16 | Watkins-Johnson Company | Electrostatic support assembly having an integral ion focus ring |
US6197117B1 (en) * | 1997-07-23 | 2001-03-06 | Applied Materials, Inc. | Wafer out-of-pocket detector and susceptor leveling tool |
US6063441A (en) | 1997-12-02 | 2000-05-16 | Applied Materials, Inc. | Processing chamber and method for confining plasma |
US6039836A (en) | 1997-12-19 | 2000-03-21 | Lam Research Corporation | Focus rings |
US6200388B1 (en) | 1998-02-11 | 2001-03-13 | Applied Materials, Inc. | Substrate support for a thermal processing chamber |
US6596086B1 (en) * | 1998-04-28 | 2003-07-22 | Shin-Etsu Handotai Co., Ltd. | Apparatus for thin film growth |
US6184154B1 (en) * | 1999-10-13 | 2001-02-06 | Seh America, Inc. | Method of processing the backside of a wafer within an epitaxial reactor chamber |
JP2002134484A (en) | 2000-10-19 | 2002-05-10 | Asm Japan Kk | Semiconductor substrate holding device |
US7024105B2 (en) * | 2003-10-10 | 2006-04-04 | Applied Materials Inc. | Substrate heater assembly |
KR20070009159A (en) | 2005-07-15 | 2007-01-18 | 삼성전자주식회사 | Wafer susceptor of plasma etching apparatus |
JP2008103403A (en) | 2006-10-17 | 2008-05-01 | Tokyo Electron Ltd | Substrate mount table and plasma treatment apparatus |
JP4888143B2 (en) | 2007-02-05 | 2012-02-29 | 三菱電機株式会社 | T-branch waveguide and array antenna |
US20080314319A1 (en) * | 2007-06-19 | 2008-12-25 | Memc Electronic Materials, Inc. | Susceptor for improving throughput and reducing wafer damage |
JP4661982B2 (en) * | 2007-12-28 | 2011-03-30 | 信越半導体株式会社 | Epitaxial growth susceptor |
JP5395633B2 (en) | 2009-11-17 | 2014-01-22 | 東京エレクトロン株式会社 | Substrate mounting table for substrate processing apparatus |
JP3172327U (en) | 2010-10-07 | 2011-12-15 | 日本碍子株式会社 | Components for semiconductor manufacturing equipment |
US8371567B2 (en) | 2011-04-13 | 2013-02-12 | Novellus Systems, Inc. | Pedestal covers |
US20130000848A1 (en) * | 2011-07-01 | 2013-01-03 | Novellus Systems Inc. | Pedestal with edge gas deflector for edge profile control |
US20130025538A1 (en) * | 2011-07-27 | 2013-01-31 | Applied Materials, Inc. | Methods and apparatus for deposition processes |
US8988848B2 (en) | 2011-12-15 | 2015-03-24 | Applied Materials, Inc. | Extended and independent RF powered cathode substrate for extreme edge tunability |
JP5704461B2 (en) * | 2012-02-24 | 2015-04-22 | 信越半導体株式会社 | Single wafer epitaxial wafer manufacturing apparatus and epitaxial wafer manufacturing method using the same |
US9245841B2 (en) | 2012-07-19 | 2016-01-26 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and fabricating process for the same |
US10242848B2 (en) | 2014-12-12 | 2019-03-26 | Lam Research Corporation | Carrier ring structure and chamber systems including the same |
CN107112275B (en) | 2014-12-19 | 2020-10-30 | 应用材料公司 | Edge ring for substrate processing chamber |
US10648079B2 (en) | 2014-12-19 | 2020-05-12 | Lam Research Corporation | Reducing backside deposition at wafer edge |
JP6320945B2 (en) * | 2015-01-30 | 2018-05-09 | 東京エレクトロン株式会社 | Substrate processing apparatus and substrate processing method |
US20160289827A1 (en) | 2015-03-31 | 2016-10-06 | Lam Research Corporation | Plasma processing systems and structures having sloped confinement rings |
JP6424726B2 (en) | 2015-04-27 | 2018-11-21 | 株式会社Sumco | Susceptor and epitaxial growth apparatus |
US20170002465A1 (en) | 2015-06-30 | 2017-01-05 | Lam Research Corporation | Separation of Plasma Suppression and Wafer Edge to Improve Edge Film Thickness Uniformity |
TWI729101B (en) * | 2016-04-02 | 2021-06-01 | 美商應用材料股份有限公司 | Apparatus and methods for wafer rotation in carousel susceptor |
-
2017
- 2017-03-03 US US15/449,333 patent/US11702748B2/en active Active
-
2018
- 2018-03-01 TW TW107106753A patent/TWI780119B/en active
- 2018-03-01 TW TW111134623A patent/TW202305175A/en unknown
- 2018-03-01 SG SG10201801701PA patent/SG10201801701PA/en unknown
- 2018-03-01 SG SG10202109658Q patent/SG10202109658QA/en unknown
- 2018-03-02 JP JP2018037155A patent/JP7182367B2/en active Active
- 2018-03-02 KR KR1020180025117A patent/KR102502273B1/en active IP Right Grant
- 2018-03-05 CN CN201810180320.8A patent/CN108546934A/en active Pending
-
2022
- 2022-11-21 JP JP2022185486A patent/JP7407896B2/en active Active
-
2023
- 2023-02-16 KR KR1020230020931A patent/KR20230029729A/en active IP Right Grant
- 2023-06-01 US US18/327,558 patent/US20230304156A1/en active Pending
- 2023-12-19 JP JP2023213550A patent/JP2024037955A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
JP2023018054A (en) | 2023-02-07 |
US11702748B2 (en) | 2023-07-18 |
CN108546934A (en) | 2018-09-18 |
KR20230029729A (en) | 2023-03-03 |
US20230304156A1 (en) | 2023-09-28 |
SG10201801701PA (en) | 2018-10-30 |
KR20180101243A (en) | 2018-09-12 |
JP2018152558A (en) | 2018-09-27 |
KR102502273B1 (en) | 2023-02-20 |
TW201842226A (en) | 2018-12-01 |
US20180251893A1 (en) | 2018-09-06 |
TW202305175A (en) | 2023-02-01 |
JP7182367B2 (en) | 2022-12-02 |
TWI780119B (en) | 2022-10-11 |
JP7407896B2 (en) | 2024-01-04 |
JP2024037955A (en) | 2024-03-19 |
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