EP3337300A4 - Plasma control device - Google Patents
Plasma control device Download PDFInfo
- Publication number
- EP3337300A4 EP3337300A4 EP17741539.5A EP17741539A EP3337300A4 EP 3337300 A4 EP3337300 A4 EP 3337300A4 EP 17741539 A EP17741539 A EP 17741539A EP 3337300 A4 EP3337300 A4 EP 3337300A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- control device
- plasma control
- plasma
- control
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/3299—Feedback systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/245—Detection characterised by the variable being measured
- H01J2237/24564—Measurements of electric or magnetic variables, e.g. voltage, current, frequency
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/332—Coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016011012 | 2016-01-22 | ||
PCT/JP2017/001942 WO2017126662A1 (en) | 2016-01-22 | 2017-01-20 | Plasma control device |
Publications (3)
Publication Number | Publication Date |
---|---|
EP3337300A1 EP3337300A1 (en) | 2018-06-20 |
EP3337300A4 true EP3337300A4 (en) | 2018-12-05 |
EP3337300B1 EP3337300B1 (en) | 2020-11-25 |
Family
ID=59361793
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP17741539.5A Active EP3337300B1 (en) | 2016-01-22 | 2017-01-20 | Plasma control device |
Country Status (7)
Country | Link |
---|---|
US (1) | US11195697B2 (en) |
EP (1) | EP3337300B1 (en) |
JP (2) | JP6510679B2 (en) |
KR (1) | KR20180116225A (en) |
CN (1) | CN108353493B (en) |
TW (1) | TWI713681B (en) |
WO (1) | WO2017126662A1 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10892140B2 (en) * | 2018-07-27 | 2021-01-12 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
US10483089B2 (en) | 2014-02-28 | 2019-11-19 | Eagle Harbor Technologies, Inc. | High voltage resistive output stage circuit |
US11430635B2 (en) | 2018-07-27 | 2022-08-30 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US11004660B2 (en) | 2018-11-30 | 2021-05-11 | Eagle Harbor Technologies, Inc. | Variable output impedance RF generator |
US10672590B2 (en) * | 2018-03-14 | 2020-06-02 | Lam Research Corporation | Frequency tuning for a matchless plasma source |
US11302518B2 (en) | 2018-07-27 | 2022-04-12 | Eagle Harbor Technologies, Inc. | Efficient energy recovery in a nanosecond pulser circuit |
US11532457B2 (en) | 2018-07-27 | 2022-12-20 | Eagle Harbor Technologies, Inc. | Precise plasma control system |
US11222767B2 (en) | 2018-07-27 | 2022-01-11 | Eagle Harbor Technologies, Inc. | Nanosecond pulser bias compensation |
KR20230025034A (en) | 2018-08-10 | 2023-02-21 | 이글 하버 테크놀로지스, 인코포레이티드 | Plasma sheath control for rf plasma reactors |
KR102142867B1 (en) * | 2018-12-31 | 2020-08-10 | 인투코어테크놀로지 주식회사 | Atmospheric Pressure Plasma Generation Apparatus |
KR102257146B1 (en) * | 2019-12-23 | 2021-05-27 | 인투코어테크놀로지 주식회사 | The Plasma Generation Apparatus And The Operational Method Of The Same |
US11532455B2 (en) | 2018-12-31 | 2022-12-20 | En2Core Technology, Inc. | Plasma generating apparatus and method for operating same |
TW202308306A (en) * | 2019-01-08 | 2023-02-16 | 美商鷹港科技股份有限公司 | Method for creating high voltage pulses |
CN112087852A (en) * | 2019-06-12 | 2020-12-15 | 中国石油化工股份有限公司 | Control method and control device for plasma generator |
TWI778449B (en) | 2019-11-15 | 2022-09-21 | 美商鷹港科技股份有限公司 | High voltage pulsing circuit |
KR20230150396A (en) | 2019-12-24 | 2023-10-30 | 이글 하버 테크놀로지스, 인코포레이티드 | Nanosecond pulser rf isolation for plasma systems |
KR102413538B1 (en) * | 2020-05-08 | 2022-06-27 | 인투코어테크놀로지 주식회사 | A method of precisely controling frequency and rf generator using the same |
JP7412814B2 (en) * | 2020-06-26 | 2024-01-15 | エンツーコア テクノロジー,インコーポレーテッド | plasma generator |
DE102020117402A1 (en) * | 2020-07-01 | 2022-01-05 | Analytik Jena Gmbh | Generator for spectrometry |
KR102381084B1 (en) * | 2020-08-04 | 2022-04-01 | 인투코어테크놀로지 주식회사 | Atmospheric Pressure Plasma Generation Apparatus |
KR102479772B1 (en) * | 2020-08-14 | 2022-12-22 | 인투코어테크놀로지 주식회사 | Atmospheric Pressure Plasma Generation Apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0840350A2 (en) * | 1996-11-04 | 1998-05-06 | Applied Materials, Inc. | Plasma apparatus and process with filtering of plasma sheath-generated harmonics |
US20010025691A1 (en) * | 2000-03-24 | 2001-10-04 | Seiichiro Kanno | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
US20050061442A1 (en) * | 2001-12-13 | 2005-03-24 | Tsutomu Higashiura | Plasma treatment apparatus and control method thereof |
JP2005116818A (en) * | 2003-10-08 | 2005-04-28 | Nec Yamagata Ltd | Plasma generator |
US20080241016A1 (en) * | 2007-03-30 | 2008-10-02 | Tokyo Electron Limited | Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH04212414A (en) * | 1990-08-16 | 1992-08-04 | Fuji Electric Co Ltd | Plasma process equipment |
JP2770573B2 (en) | 1991-01-18 | 1998-07-02 | 三菱電機株式会社 | Plasma generator |
US5576629A (en) * | 1994-10-24 | 1996-11-19 | Fourth State Technology, Inc. | Plasma monitoring and control method and system |
JPH0982495A (en) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | Plasma producing device and method |
US6252354B1 (en) * | 1996-11-04 | 2001-06-26 | Applied Materials, Inc. | RF tuning method for an RF plasma reactor using frequency servoing and power, voltage, current or DI/DT control |
US6195342B1 (en) | 1997-11-25 | 2001-02-27 | Motorola, Inc. | Method for determining hand-off candidates in a neighbor set in a CDMA communication system |
JP3659180B2 (en) | 2000-03-24 | 2005-06-15 | 株式会社日立製作所 | Semiconductor manufacturing apparatus and processing method, and wafer potential probe |
US6305316B1 (en) | 2000-07-20 | 2001-10-23 | Axcelis Technologies, Inc. | Integrated power oscillator RF source of plasma immersion ion implantation system |
JP4042363B2 (en) * | 2001-07-23 | 2008-02-06 | 株式会社日立国際電気 | Spiral resonator for plasma generation |
JP4178775B2 (en) * | 2001-08-31 | 2008-11-12 | 株式会社日立国際電気 | Plasma reactor |
JP2005252057A (en) | 2004-03-05 | 2005-09-15 | Sumitomo Precision Prod Co Ltd | Etching system |
US20080179948A1 (en) * | 2005-10-31 | 2008-07-31 | Mks Instruments, Inc. | Radio frequency power delivery system |
JP2008277275A (en) * | 2007-03-30 | 2008-11-13 | Tokyo Electron Ltd | Plasma treatment device, measuring apparatus, measuring method, and control device |
JP4777481B2 (en) | 2008-08-11 | 2011-09-21 | 住友精密工業株式会社 | Plasma control device |
US8501631B2 (en) * | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
JP5562065B2 (en) * | 2010-02-25 | 2014-07-30 | Sppテクノロジーズ株式会社 | Plasma processing equipment |
US9528814B2 (en) * | 2011-05-19 | 2016-12-27 | NeoVision, LLC | Apparatus and method of using impedance resonance sensor for thickness measurement |
JP2013105664A (en) | 2011-11-15 | 2013-05-30 | Tokyo Electron Ltd | High frequency antenna circuit and inductively coupled plasma treatment apparatus |
JP5808012B2 (en) * | 2011-12-27 | 2015-11-10 | 東京エレクトロン株式会社 | Plasma processing equipment |
US8576013B2 (en) | 2011-12-29 | 2013-11-05 | Mks Instruments, Inc. | Power distortion-based servo control systems for frequency tuning RF power sources |
CN202905659U (en) * | 2012-10-12 | 2013-04-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Matching device and plasma processing equipment |
JP6078419B2 (en) * | 2013-02-12 | 2017-02-08 | 株式会社日立ハイテクノロジーズ | Control method of plasma processing apparatus, plasma processing method and plasma processing apparatus |
-
2017
- 2017-01-20 JP JP2017562924A patent/JP6510679B2/en active Active
- 2017-01-20 KR KR1020187011782A patent/KR20180116225A/en active Search and Examination
- 2017-01-20 US US15/760,298 patent/US11195697B2/en active Active
- 2017-01-20 EP EP17741539.5A patent/EP3337300B1/en active Active
- 2017-01-20 WO PCT/JP2017/001942 patent/WO2017126662A1/en active Application Filing
- 2017-01-20 CN CN201780003788.3A patent/CN108353493B/en active Active
- 2017-01-23 TW TW106102420A patent/TWI713681B/en active
-
2019
- 2019-04-03 JP JP2019071407A patent/JP2019145513A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0840350A2 (en) * | 1996-11-04 | 1998-05-06 | Applied Materials, Inc. | Plasma apparatus and process with filtering of plasma sheath-generated harmonics |
US20010025691A1 (en) * | 2000-03-24 | 2001-10-04 | Seiichiro Kanno | Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe |
US20050061442A1 (en) * | 2001-12-13 | 2005-03-24 | Tsutomu Higashiura | Plasma treatment apparatus and control method thereof |
JP2005116818A (en) * | 2003-10-08 | 2005-04-28 | Nec Yamagata Ltd | Plasma generator |
US20080241016A1 (en) * | 2007-03-30 | 2008-10-02 | Tokyo Electron Limited | Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system |
Non-Patent Citations (1)
Title |
---|
See also references of WO2017126662A1 * |
Also Published As
Publication number | Publication date |
---|---|
US20180315581A1 (en) | 2018-11-01 |
EP3337300A1 (en) | 2018-06-20 |
KR20180116225A (en) | 2018-10-24 |
WO2017126662A1 (en) | 2017-07-27 |
TW201732857A (en) | 2017-09-16 |
CN108353493B (en) | 2020-05-19 |
TWI713681B (en) | 2020-12-21 |
CN108353493A (en) | 2018-07-31 |
US11195697B2 (en) | 2021-12-07 |
JP2019145513A (en) | 2019-08-29 |
JP6510679B2 (en) | 2019-05-08 |
JPWO2017126662A1 (en) | 2018-08-02 |
EP3337300B1 (en) | 2020-11-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP3337300A4 (en) | Plasma control device | |
EP3449341A4 (en) | Controlling optically-switchable devices | |
EP3425481A4 (en) | Control device | |
EP3304543A4 (en) | Device voice control | |
EP3104235A4 (en) | Control device | |
EP3167349A4 (en) | Device control | |
EP3150341A4 (en) | Robot control device | |
EP3168504A4 (en) | Lock-up-clutch control device | |
EP3560298A4 (en) | Plasma production and control device | |
EP3385796A4 (en) | Control device | |
EP3306064B8 (en) | Control device | |
EP3291424A4 (en) | Control device | |
EP3163304A4 (en) | Control device | |
EP3348823A4 (en) | Control device | |
EP3287974A4 (en) | Control device | |
EP3712767A4 (en) | Control device | |
EP3674740A4 (en) | Control device | |
EP3110000A4 (en) | Control device | |
EP3582036A4 (en) | Control device | |
EP3214279A4 (en) | Valve-opening-closing-timing control device | |
EP3609300A4 (en) | Plasma-generating device | |
EP3306804A4 (en) | Dc-brushless-motor control device | |
EP3495020A4 (en) | Plasma treatment device | |
EP3718601A4 (en) | Control device | |
EP3521599A4 (en) | Control device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE |
|
PUAI | Public reference made under article 153(3) epc to a published international application that has entered the european phase |
Free format text: ORIGINAL CODE: 0009012 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE |
|
17P | Request for examination filed |
Effective date: 20180315 |
|
AK | Designated contracting states |
Kind code of ref document: A1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
AX | Request for extension of the european patent |
Extension state: BA ME |
|
A4 | Supplementary search report drawn up and despatched |
Effective date: 20181026 |
|
RIC1 | Information provided on ipc code assigned before grant |
Ipc: H05H 1/46 20060101AFI20181022BHEP Ipc: H01L 21/3065 20060101ALI20181022BHEP Ipc: H01J 37/32 20060101ALI20181022BHEP |
|
DAV | Request for validation of the european patent (deleted) | ||
DAX | Request for extension of the european patent (deleted) | ||
GRAP | Despatch of communication of intention to grant a patent |
Free format text: ORIGINAL CODE: EPIDOSNIGR1 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: GRANT OF PATENT IS INTENDED |
|
INTG | Intention to grant announced |
Effective date: 20200806 |
|
GRAS | Grant fee paid |
Free format text: ORIGINAL CODE: EPIDOSNIGR3 |
|
GRAA | (expected) grant |
Free format text: ORIGINAL CODE: 0009210 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: THE PATENT HAS BEEN GRANTED |
|
AK | Designated contracting states |
Kind code of ref document: B1 Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR |
|
RAP1 | Party data changed (applicant data changed or rights of an application transferred) |
Owner name: SPP TECHNOLOGIES CO., LTD. |
|
REG | Reference to a national code |
Ref country code: GB Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: EP |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: REF Ref document number: 1339814 Country of ref document: AT Kind code of ref document: T Effective date: 20201215 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R096 Ref document number: 602017028281 Country of ref document: DE |
|
REG | Reference to a national code |
Ref country code: IE Ref legal event code: FG4D |
|
REG | Reference to a national code |
Ref country code: AT Ref legal event code: MK05 Ref document number: 1339814 Country of ref document: AT Kind code of ref document: T Effective date: 20201125 |
|
REG | Reference to a national code |
Ref country code: NL Ref legal event code: MP Effective date: 20201125 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: NO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210225 Ref country code: PT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210325 Ref country code: RS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: FI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: GR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210226 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BG Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210225 Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210325 Ref country code: LV Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: PL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: SE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: AT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 |
|
REG | Reference to a national code |
Ref country code: LT Ref legal event code: MG9D |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HR Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: RO Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: SK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: SM Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: CZ Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: EE Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: LT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R097 Ref document number: 602017028281 Country of ref document: DE |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: DK Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: MC Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 |
|
REG | Reference to a national code |
Ref country code: CH Ref legal event code: PL |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LU Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210120 |
|
PLBE | No opposition filed within time limit |
Free format text: ORIGINAL CODE: 0009261 |
|
STAA | Information on the status of an ep patent application or granted ep patent |
Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT |
|
REG | Reference to a national code |
Ref country code: BE Ref legal event code: MM Effective date: 20210131 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IT Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: AL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: NL Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 |
|
26N | No opposition filed |
Effective date: 20210826 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: LI Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210131 Ref country code: SI Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: CH Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210131 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: ES Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 Ref country code: IE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210120 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: IS Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20210325 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: BE Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES Effective date: 20210131 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: DE Payment date: 20221130 Year of fee payment: 7 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: CY Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT Effective date: 20201125 |
|
PG25 | Lapsed in a contracting state [announced via postgrant information from national office to epo] |
Ref country code: HU Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT; INVALID AB INITIO Effective date: 20170120 |
|
REG | Reference to a national code |
Ref country code: DE Ref legal event code: R082 Ref document number: 602017028281 Country of ref document: DE Representative=s name: KANDLBINDER, MARKUS, DIPL.-PHYS., DE |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: GB Payment date: 20231130 Year of fee payment: 8 |
|
PGFP | Annual fee paid to national office [announced via postgrant information from national office to epo] |
Ref country code: FR Payment date: 20231212 Year of fee payment: 8 |