EP3337300A4 - Plasma control device - Google Patents

Plasma control device Download PDF

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Publication number
EP3337300A4
EP3337300A4 EP17741539.5A EP17741539A EP3337300A4 EP 3337300 A4 EP3337300 A4 EP 3337300A4 EP 17741539 A EP17741539 A EP 17741539A EP 3337300 A4 EP3337300 A4 EP 3337300A4
Authority
EP
European Patent Office
Prior art keywords
control device
plasma control
plasma
control
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP17741539.5A
Other languages
German (de)
French (fr)
Other versions
EP3337300A1 (en
EP3337300B1 (en
Inventor
Toshihiro Hayami
Ryosuke Fujii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPP Technologies Co Ltd
Original Assignee
SPP Technologies Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPP Technologies Co Ltd filed Critical SPP Technologies Co Ltd
Publication of EP3337300A1 publication Critical patent/EP3337300A1/en
Publication of EP3337300A4 publication Critical patent/EP3337300A4/en
Application granted granted Critical
Publication of EP3337300B1 publication Critical patent/EP3337300B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • H01J37/32183Matching circuits
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32146Amplitude modulation, includes pulsing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32174Circuits specially adapted for controlling the RF discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32917Plasma diagnostics
    • H01J37/3299Feedback systems
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38Impedance-matching networks
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05HPLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00Generating plasma; Handling plasma
    • H05H1/24Generating plasma
    • H05H1/46Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/245Detection characterised by the variable being measured
    • H01J2237/24564Measurements of electric or magnetic variables, e.g. voltage, current, frequency
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32091Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
EP17741539.5A 2016-01-22 2017-01-20 Plasma control device Active EP3337300B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016011012 2016-01-22
PCT/JP2017/001942 WO2017126662A1 (en) 2016-01-22 2017-01-20 Plasma control device

Publications (3)

Publication Number Publication Date
EP3337300A1 EP3337300A1 (en) 2018-06-20
EP3337300A4 true EP3337300A4 (en) 2018-12-05
EP3337300B1 EP3337300B1 (en) 2020-11-25

Family

ID=59361793

Family Applications (1)

Application Number Title Priority Date Filing Date
EP17741539.5A Active EP3337300B1 (en) 2016-01-22 2017-01-20 Plasma control device

Country Status (7)

Country Link
US (1) US11195697B2 (en)
EP (1) EP3337300B1 (en)
JP (2) JP6510679B2 (en)
KR (1) KR20180116225A (en)
CN (1) CN108353493B (en)
TW (1) TWI713681B (en)
WO (1) WO2017126662A1 (en)

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US10892140B2 (en) * 2018-07-27 2021-01-12 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
US10483089B2 (en) 2014-02-28 2019-11-19 Eagle Harbor Technologies, Inc. High voltage resistive output stage circuit
US11430635B2 (en) 2018-07-27 2022-08-30 Eagle Harbor Technologies, Inc. Precise plasma control system
US11004660B2 (en) 2018-11-30 2021-05-11 Eagle Harbor Technologies, Inc. Variable output impedance RF generator
US10672590B2 (en) * 2018-03-14 2020-06-02 Lam Research Corporation Frequency tuning for a matchless plasma source
US11302518B2 (en) 2018-07-27 2022-04-12 Eagle Harbor Technologies, Inc. Efficient energy recovery in a nanosecond pulser circuit
US11532457B2 (en) 2018-07-27 2022-12-20 Eagle Harbor Technologies, Inc. Precise plasma control system
US11222767B2 (en) 2018-07-27 2022-01-11 Eagle Harbor Technologies, Inc. Nanosecond pulser bias compensation
KR20230025034A (en) 2018-08-10 2023-02-21 이글 하버 테크놀로지스, 인코포레이티드 Plasma sheath control for rf plasma reactors
KR102142867B1 (en) * 2018-12-31 2020-08-10 인투코어테크놀로지 주식회사 Atmospheric Pressure Plasma Generation Apparatus
KR102257146B1 (en) * 2019-12-23 2021-05-27 인투코어테크놀로지 주식회사 The Plasma Generation Apparatus And The Operational Method Of The Same
US11532455B2 (en) 2018-12-31 2022-12-20 En2Core Technology, Inc. Plasma generating apparatus and method for operating same
TW202308306A (en) * 2019-01-08 2023-02-16 美商鷹港科技股份有限公司 Method for creating high voltage pulses
CN112087852A (en) * 2019-06-12 2020-12-15 中国石油化工股份有限公司 Control method and control device for plasma generator
TWI778449B (en) 2019-11-15 2022-09-21 美商鷹港科技股份有限公司 High voltage pulsing circuit
KR20230150396A (en) 2019-12-24 2023-10-30 이글 하버 테크놀로지스, 인코포레이티드 Nanosecond pulser rf isolation for plasma systems
KR102413538B1 (en) * 2020-05-08 2022-06-27 인투코어테크놀로지 주식회사 A method of precisely controling frequency and rf generator using the same
JP7412814B2 (en) * 2020-06-26 2024-01-15 エンツーコア テクノロジー,インコーポレーテッド plasma generator
DE102020117402A1 (en) * 2020-07-01 2022-01-05 Analytik Jena Gmbh Generator for spectrometry
KR102381084B1 (en) * 2020-08-04 2022-04-01 인투코어테크놀로지 주식회사 Atmospheric Pressure Plasma Generation Apparatus
KR102479772B1 (en) * 2020-08-14 2022-12-22 인투코어테크놀로지 주식회사 Atmospheric Pressure Plasma Generation Apparatus

Citations (5)

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EP0840350A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
US20010025691A1 (en) * 2000-03-24 2001-10-04 Seiichiro Kanno Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US20050061442A1 (en) * 2001-12-13 2005-03-24 Tsutomu Higashiura Plasma treatment apparatus and control method thereof
JP2005116818A (en) * 2003-10-08 2005-04-28 Nec Yamagata Ltd Plasma generator
US20080241016A1 (en) * 2007-03-30 2008-10-02 Tokyo Electron Limited Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system

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Publication number Priority date Publication date Assignee Title
EP0840350A2 (en) * 1996-11-04 1998-05-06 Applied Materials, Inc. Plasma apparatus and process with filtering of plasma sheath-generated harmonics
US20010025691A1 (en) * 2000-03-24 2001-10-04 Seiichiro Kanno Semiconductor manufacturing apparatus and method of processing semiconductor wafer using plasma, and wafer voltage probe
US20050061442A1 (en) * 2001-12-13 2005-03-24 Tsutomu Higashiura Plasma treatment apparatus and control method thereof
JP2005116818A (en) * 2003-10-08 2005-04-28 Nec Yamagata Ltd Plasma generator
US20080241016A1 (en) * 2007-03-30 2008-10-02 Tokyo Electron Limited Plasma processing system, plasma measurement system, plasma measurement method, and plasma control system

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Title
See also references of WO2017126662A1 *

Also Published As

Publication number Publication date
US20180315581A1 (en) 2018-11-01
EP3337300A1 (en) 2018-06-20
KR20180116225A (en) 2018-10-24
WO2017126662A1 (en) 2017-07-27
TW201732857A (en) 2017-09-16
CN108353493B (en) 2020-05-19
TWI713681B (en) 2020-12-21
CN108353493A (en) 2018-07-31
US11195697B2 (en) 2021-12-07
JP2019145513A (en) 2019-08-29
JP6510679B2 (en) 2019-05-08
JPWO2017126662A1 (en) 2018-08-02
EP3337300B1 (en) 2020-11-25

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