SG11201903540XA - Magnetic thin film deposition chamber and thin film deposition apparatus - Google Patents

Magnetic thin film deposition chamber and thin film deposition apparatus

Info

Publication number
SG11201903540XA
SG11201903540XA SG11201903540XA SG11201903540XA SG11201903540XA SG 11201903540X A SG11201903540X A SG 11201903540XA SG 11201903540X A SG11201903540X A SG 11201903540XA SG 11201903540X A SG11201903540X A SG 11201903540XA SG 11201903540X A SG11201903540X A SG 11201903540XA
Authority
SG
Singapore
Prior art keywords
thin film
film deposition
deposition apparatus
deposition chamber
magnetic thin
Prior art date
Application number
SG11201903540XA
Inventor
Yujie Yang
Tongwen Zhang
Wei Xia
Peijun Ding
Hougong Wang
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201903540XA publication Critical patent/SG11201903540XA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H01F41/183—Sputtering targets therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/351—Sputtering by application of a magnetic field, e.g. magnetron sputtering using a magnetic field in close vicinity to the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/22—Heat treatment; Thermal decomposition; Chemical vapour deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F7/00—Magnets
    • H01F7/02—Permanent magnets [PM]
    • H01F7/0273—Magnetic circuits with PM for magnetic field generation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3435—Target holders (includes backing plates and endblocks)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
    • H01J37/3452—Magnet distribution
SG11201903540XA 2016-10-31 2017-10-18 Magnetic thin film deposition chamber and thin film deposition apparatus SG11201903540XA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610929208.0A CN108010718B (en) 2016-10-31 2016-10-31 Magnetic thin film deposition chamber and thin film deposition equipment
PCT/CN2017/106688 WO2018077090A1 (en) 2016-10-31 2017-10-18 Magnetic thin film deposition chamber and thin film deposition device

Publications (1)

Publication Number Publication Date
SG11201903540XA true SG11201903540XA (en) 2019-05-30

Family

ID=62024467

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201903540XA SG11201903540XA (en) 2016-10-31 2017-10-18 Magnetic thin film deposition chamber and thin film deposition apparatus

Country Status (7)

Country Link
US (1) US10622145B2 (en)
JP (1) JP7030804B2 (en)
KR (1) KR102138811B1 (en)
CN (1) CN108010718B (en)
SG (1) SG11201903540XA (en)
TW (1) TWI668717B (en)
WO (1) WO2018077090A1 (en)

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CN111101097A (en) * 2018-10-26 2020-05-05 北京北方华创微电子装备有限公司 Reaction chamber and thin film deposition equipment
WO2020096885A1 (en) * 2018-11-05 2020-05-14 Applied Materials, Inc. Magnetic housing systems
CN112011771B (en) * 2019-05-30 2022-02-22 北京北方华创微电子装备有限公司 Bias magnetic field control method, magnetic thin film deposition method, chamber and equipment
US11959174B2 (en) 2020-02-28 2024-04-16 Applied Materials, Inc. Shunt door for magnets in plasma process chamber
US20220122866A1 (en) * 2020-10-21 2022-04-21 Applied Materials, Inc. Magnetic holding structures for plasma processing applications
CN112359335B (en) 2020-10-23 2023-01-17 北京北方华创微电子装备有限公司 Semiconductor processing equipment and process chamber thereof
TWI749966B (en) * 2020-12-25 2021-12-11 天虹科技股份有限公司 Thin-film deposition apparatus
CN114717514B (en) * 2021-01-06 2023-12-15 鑫天虹(厦门)科技有限公司 Thin film deposition apparatus
US11915915B2 (en) * 2021-05-28 2024-02-27 Applied Materials, Inc. Apparatus for generating magnetic fields during semiconductor processing
US20220384194A1 (en) * 2021-05-28 2022-12-01 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
US20230088552A1 (en) * 2021-09-17 2023-03-23 Applied Materials, Inc. Top magnets for decreased non-uniformity in pvd
WO2023069158A1 (en) * 2021-10-21 2023-04-27 Applied Materials, Inc. Apparatus for generating magnetic fields on substrates during semiconductor processing
CN114196931B (en) * 2021-12-21 2023-09-08 北京北方华创微电子装备有限公司 Semiconductor chamber

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JPS57106009A (en) * 1980-12-23 1982-07-01 Citizen Watch Co Ltd Thin magnet and manufacture thereof
US5083112A (en) * 1990-06-01 1992-01-21 Minnesota Mining And Manufacturing Company Multi-layer thin-film eas marker
JPH08199353A (en) * 1995-01-25 1996-08-06 Matsushita Electric Ind Co Ltd Production of soft magnetic thin film
US6289546B1 (en) * 1999-03-29 2001-09-18 Stephen D. Harada Toothbrush and method of fabricating same
JP3892996B2 (en) * 1999-09-02 2007-03-14 東京エレクトロン株式会社 Magnetron plasma processing equipment
JP2002069631A (en) 2000-08-24 2002-03-08 Hitachi Ltd Sputtering method and equipment therefor
US6743340B2 (en) * 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
CN1768401A (en) * 2003-03-27 2006-05-03 独立行政法人物质·材料研究机构 Fept magnetic thin film having perpendicular magnetic anisotropy and method for preparation thereof
CN100383897C (en) * 2004-09-02 2008-04-23 中国科学院物理研究所 Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method
US9127362B2 (en) * 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
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JP6048319B2 (en) * 2013-06-06 2016-12-21 東京エレクトロン株式会社 Magnetron sputtering equipment
US9773612B2 (en) * 2013-10-30 2017-09-26 The Board Of Trustees Of The Leland Stanford Junior University Integrated magnetic devices with multi-axial magnetic anisotropy
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CN105779952B (en) * 2014-12-24 2021-06-08 北京北方华创微电子装备有限公司 Magnetron assembly and magnetron sputtering equipment
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Also Published As

Publication number Publication date
JP7030804B2 (en) 2022-03-07
CN108010718B (en) 2020-10-13
US10622145B2 (en) 2020-04-14
TW201818434A (en) 2018-05-16
KR102138811B1 (en) 2020-07-28
KR20190062574A (en) 2019-06-05
WO2018077090A1 (en) 2018-05-03
TWI668717B (en) 2019-08-11
US20190244754A1 (en) 2019-08-08
JP2019533767A (en) 2019-11-21
CN108010718A (en) 2018-05-08

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