SG11201810530YA - Deposition apparatus and physical vapor deposition chamber - Google Patents

Deposition apparatus and physical vapor deposition chamber

Info

Publication number
SG11201810530YA
SG11201810530YA SG11201810530YA SG11201810530YA SG11201810530YA SG 11201810530Y A SG11201810530Y A SG 11201810530YA SG 11201810530Y A SG11201810530Y A SG 11201810530YA SG 11201810530Y A SG11201810530Y A SG 11201810530YA SG 11201810530Y A SG11201810530Y A SG 11201810530YA
Authority
SG
Singapore
Prior art keywords
physical vapor
vapor deposition
chamber
deposition
deposition apparatus
Prior art date
Application number
SG11201810530YA
Inventor
Jun Zhang
Boyu Dong
Jinrong Zhao
Xuewei Wu
Bingliang Guo
Baogang Xu
Henan Zhang
Tong Wang
Shaohui Liu
Jun Wang
Original Assignee
Beijing Naura Microelectronics Equipment Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Publication of SG11201810530YA publication Critical patent/SG11201810530YA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/568—Transferring the substrates through a series of coating stations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H01J37/32559—Protection means, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32733—Means for moving the material to be treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32899—Multiple chambers, e.g. cluster tools
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
SG11201810530YA 2016-06-12 2016-10-09 Deposition apparatus and physical vapor deposition chamber SG11201810530YA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610407585.8A CN107488832B (en) 2016-06-12 2016-06-12 Depositing device and physical vapor deposition chamber
PCT/CN2016/101565 WO2017215154A1 (en) 2016-06-12 2016-10-09 Deposition device and physical vapour deposition chamber

Publications (1)

Publication Number Publication Date
SG11201810530YA true SG11201810530YA (en) 2018-12-28

Family

ID=60642968

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11201810530YA SG11201810530YA (en) 2016-06-12 2016-10-09 Deposition apparatus and physical vapor deposition chamber

Country Status (7)

Country Link
US (1) US10984994B2 (en)
KR (1) KR102078326B1 (en)
CN (1) CN107488832B (en)
MY (1) MY193979A (en)
SG (1) SG11201810530YA (en)
TW (1) TWI652364B (en)
WO (1) WO2017215154A1 (en)

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* Cited by examiner, † Cited by third party
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CN110344018B (en) * 2018-04-08 2020-09-08 北京七星华创集成电路装备有限公司 Multi-cathode continuous coating chamber
KR20200135550A (en) * 2018-04-18 2020-12-02 어플라이드 머티어리얼스, 인코포레이티드 Two-piece shutter disc assembly with self-centering feature
CN111986976B (en) * 2019-05-22 2022-04-22 北京北方华创微电子装备有限公司 Process chamber and semiconductor processing equipment
US11492700B2 (en) * 2019-10-18 2022-11-08 Taiwan Semiconductor Manufacturing Co. Shutter disk having lamp, power, and/or gas modules arranged at the first side of the shutter disk of thin film deposition chamber
CN110938807B (en) * 2019-11-26 2022-10-21 北京北方华创微电子装备有限公司 Control method and system for returning wafer of PVD sputtering equipment to disc according to specified path
FR3116151A1 (en) * 2020-11-10 2022-05-13 Commissariat A L'energie Atomique Et Aux Energies Alternatives METHOD FOR FORMING A USEFUL SUBSTRATE TRAPPING STRUCTURE
CN114369804B (en) * 2022-01-11 2023-10-13 北京北方华创微电子装备有限公司 Thin film deposition method
CN114318286A (en) * 2022-01-27 2022-04-12 北京青禾晶元半导体科技有限责任公司 Preparation device and preparation method of composite substrate
CN115074692B (en) * 2022-06-24 2023-10-13 北京北方华创微电子装备有限公司 Semiconductor process equipment and process chamber thereof
CN116695086B (en) * 2023-06-30 2024-04-16 北京北方华创微电子装备有限公司 Process chamber, semiconductor process equipment and thin film deposition method

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US5131460A (en) * 1991-10-24 1992-07-21 Applied Materials, Inc. Reducing particulates during semiconductor fabrication
JPH0711442A (en) 1993-06-28 1995-01-13 Fuji Electric Co Ltd Sputtering device for producing semiconductor
JPH07335552A (en) * 1994-06-08 1995-12-22 Tel Varian Ltd Treatment device
JP3537269B2 (en) * 1996-05-21 2004-06-14 アネルバ株式会社 Multi-chamber sputtering equipment
US6110821A (en) 1998-01-27 2000-08-29 Applied Materials, Inc. Method for forming titanium silicide in situ
US6132805A (en) * 1998-10-20 2000-10-17 Cvc Products, Inc. Shutter for thin-film processing equipment
JP4902052B2 (en) * 2001-04-05 2012-03-21 キヤノンアネルバ株式会社 Sputtering equipment
JP2004277773A (en) * 2003-03-13 2004-10-07 Murata Mfg Co Ltd Inline sputtering system
JP4263133B2 (en) 2004-04-12 2009-05-13 ヒタチグローバルストレージテクノロジーズネザーランドビーブイ Magnetic recording medium and magnetic recording / reproducing apparatus
WO2006063308A2 (en) * 2004-12-08 2006-06-15 Symmorphix, Inc. DEPOSITION OF LICoO2
WO2008141106A1 (en) * 2007-05-09 2008-11-20 Applied Materials, Inc. Transfer chamber with vacuum extension for shutter disks
WO2008149891A1 (en) * 2007-06-04 2008-12-11 Canon Anelva Corporation Film forming apparatus
JP2011108603A (en) * 2009-11-20 2011-06-02 Ulvac Japan Ltd Thin film lithium secondary battery, and forming method of thin film lithium secondary battery
WO2011077653A1 (en) * 2009-12-25 2011-06-30 キヤノンアネルバ株式会社 Method for manufacturing electronic device, and sputtering apparatus
CN201648508U (en) * 2010-03-05 2010-11-24 凌嘉科技股份有限公司 Horizontal step-type sputtering device
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Also Published As

Publication number Publication date
US10984994B2 (en) 2021-04-20
KR102078326B1 (en) 2020-04-07
WO2017215154A1 (en) 2017-12-21
CN107488832A (en) 2017-12-19
US20180247799A1 (en) 2018-08-30
TW201742939A (en) 2017-12-16
KR20180018554A (en) 2018-02-21
CN107488832B (en) 2019-11-29
MY193979A (en) 2022-11-04
TWI652364B (en) 2019-03-01

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