SG11201606759TA - Reaction chamber and plasma processing apparatus - Google Patents
Reaction chamber and plasma processing apparatusInfo
- Publication number
- SG11201606759TA SG11201606759TA SG11201606759TA SG11201606759TA SG11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA SG 11201606759T A SG11201606759T A SG 11201606759TA
- Authority
- SG
- Singapore
- Prior art keywords
- processing apparatus
- reaction chamber
- plasma processing
- plasma
- chamber
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410063219.6A CN104862671B (en) | 2014-02-24 | 2014-02-24 | A kind of reaction chamber and plasma processing device |
PCT/CN2014/092878 WO2015124014A1 (en) | 2014-02-24 | 2014-12-03 | Reaction cavity and plasma processing apparatus |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201606759TA true SG11201606759TA (en) | 2016-09-29 |
Family
ID=53877612
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201606759TA SG11201606759TA (en) | 2014-02-24 | 2014-12-03 | Reaction chamber and plasma processing apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US10854482B2 (en) |
KR (1) | KR101852582B1 (en) |
CN (1) | CN104862671B (en) |
MY (1) | MY193542A (en) |
SG (1) | SG11201606759TA (en) |
TW (1) | TWI534891B (en) |
WO (1) | WO2015124014A1 (en) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106611643A (en) * | 2015-10-23 | 2017-05-03 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Three-dimensional coil, reaction cavity chamber and semiconductor processing equipment |
CN106255304A (en) * | 2016-07-19 | 2016-12-21 | 中国人民解放军装甲兵工程学院 | Plasma density computational methods in a kind of cylinder |
CN108573846A (en) * | 2017-03-09 | 2018-09-25 | 北京北方华创微电子装备有限公司 | Plasma chamber and plasma processing device |
CN109036817B (en) * | 2017-06-08 | 2021-09-17 | 北京北方华创微电子装备有限公司 | Inductive coupling coil and process chamber |
CN109148073B (en) * | 2017-06-16 | 2022-10-21 | 北京北方华创微电子装备有限公司 | Coil assembly, plasma generating device and plasma equipment |
KR101986744B1 (en) * | 2017-09-27 | 2019-06-07 | 주식회사 유진테크 | Plasma processing apparatus and method |
CN109801824B (en) * | 2017-11-15 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Dielectric window assembly and reaction chamber |
EP3588533A1 (en) * | 2018-06-21 | 2020-01-01 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Plasma source and method of operating the same |
KR102435254B1 (en) * | 2018-10-30 | 2022-08-23 | 베이징 나우라 마이크로일렉트로닉스 이큅먼트 씨오., 엘티디. | Induction coil set and reaction chamber |
KR102070544B1 (en) * | 2019-04-17 | 2020-01-29 | 주식회사 기가레인 | Plasma antenna and plasma processing apparatus including the same |
CN110415948B (en) * | 2019-08-09 | 2020-08-04 | 江苏鲁汶仪器有限公司 | Three-dimensional four-spiral inductance coupling coil |
CN111192812B (en) * | 2020-01-07 | 2022-11-25 | 北京北方华创微电子装备有限公司 | Inductive coupling device and semiconductor processing equipment |
CN111725110B (en) * | 2020-06-24 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
CN112331546A (en) * | 2020-10-26 | 2021-02-05 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
CN115602406A (en) * | 2021-07-09 | 2023-01-13 | 北京北方华创微电子装备有限公司(Cn) | Coil device for generating plasma and semiconductor processing equipment |
CN115497797A (en) * | 2022-05-27 | 2022-12-20 | 北京北方华创微电子装备有限公司 | Coil structure for generating plasma and semiconductor processing equipment |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07263188A (en) | 1994-03-18 | 1995-10-13 | Hitachi Ltd | Plasma treatment device |
JPH08263188A (en) | 1995-03-24 | 1996-10-11 | Nec Corp | Keyboard control system |
WO1997033300A1 (en) * | 1996-03-06 | 1997-09-12 | Mattson Technology, Inc. | Icp reactor having a conically-shaped plasma-generating section |
KR20010080572A (en) | 1998-11-26 | 2001-08-22 | 가나이 쓰토무 | Dry etching apparatus and dry etching method |
US7871490B2 (en) * | 2003-03-18 | 2011-01-18 | Top Engineering Co., Ltd. | Inductively coupled plasma generation system with a parallel antenna array having evenly distributed power input and ground nodes and improved field distribution |
US7188807B2 (en) | 2005-03-11 | 2007-03-13 | The Boeing Company | Refueling booms with multiple couplings and associated methods and systems |
KR100774521B1 (en) | 2005-07-19 | 2007-11-08 | 주식회사 디엠에스 | Plasma reactor having multiple antenna structure |
KR100777151B1 (en) * | 2006-03-21 | 2007-11-16 | 주식회사 디엠에스 | Hybrid coupled plasma reactor with icp and ccp functions |
JP5277473B2 (en) * | 2006-11-28 | 2013-08-28 | サムコ株式会社 | Plasma processing equipment |
CN102549725B (en) | 2009-09-29 | 2016-06-01 | 株式会社爱发科 | Plasma etching apparatus |
JP5781349B2 (en) * | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
US9196463B2 (en) | 2011-04-07 | 2015-11-24 | Varian Semiconductor Equipment Associates, Inc. | System and method for plasma monitoring using microwaves |
-
2014
- 2014-02-24 CN CN201410063219.6A patent/CN104862671B/en active Active
- 2014-12-02 TW TW103141716A patent/TWI534891B/en active
- 2014-12-03 US US15/119,525 patent/US10854482B2/en active Active
- 2014-12-03 MY MYPI2016703072A patent/MY193542A/en unknown
- 2014-12-03 KR KR1020167025399A patent/KR101852582B1/en active IP Right Grant
- 2014-12-03 SG SG11201606759TA patent/SG11201606759TA/en unknown
- 2014-12-03 WO PCT/CN2014/092878 patent/WO2015124014A1/en active Application Filing
Also Published As
Publication number | Publication date |
---|---|
KR20160128338A (en) | 2016-11-07 |
US10854482B2 (en) | 2020-12-01 |
US20170011938A1 (en) | 2017-01-12 |
MY193542A (en) | 2022-10-18 |
WO2015124014A1 (en) | 2015-08-27 |
TW201533799A (en) | 2015-09-01 |
CN104862671A (en) | 2015-08-26 |
KR101852582B1 (en) | 2018-04-26 |
TWI534891B (en) | 2016-05-21 |
CN104862671B (en) | 2019-08-23 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
SG11201704138PA (en) | Precleaning chamber and plasma processing apparatus | |
SG11201606759TA (en) | Reaction chamber and plasma processing apparatus | |
SG10201702290WA (en) | Plasma Processing Method | |
GB201516440D0 (en) | Apparatus and process | |
EP3152153A4 (en) | Advanced processing apparatus | |
SG11201609143TA (en) | Plasma processing method and plasma processing apparatus | |
SG11201704367QA (en) | Processing chamber | |
SG11201606429YA (en) | Bearing device and plasma processing apparatus | |
SG11201605335PA (en) | Process chamber and semiconductor processing apparatus | |
GB201401146D0 (en) | Non-thermal plasma | |
SG11201702404XA (en) | Plasma processing method and plasma processing apparatus | |
SG11201704891XA (en) | Heating chamber and semiconductor processing apparatus | |
SG11201912566WA (en) | Plasma processing apparatus | |
SG10201502813TA (en) | Substrate Processing Apparatus | |
SG10201702291PA (en) | Plasma Processing Method | |
SG11201608815XA (en) | Reaction chamber and semi-conductor processing device | |
SG11201912567RA (en) | Plasma processing apparatus | |
SG10201504537YA (en) | Processing apparatus | |
SG10201700763VA (en) | Processing apparatus | |
SG11201912655XA (en) | Plasma processing apparatus | |
SG10201505187TA (en) | Processing apparatus | |
SG11201912564VA (en) | Plasma processing apparatus | |
GB2551890B (en) | Plasma generating apparatus | |
SG11201912569UA (en) | Plasma processing apparatus | |
SG11201705934UA (en) | Substrate treatment apparatus and reaction tube |