SG11201607105PA - Magnetic thin film and application device including magnetic thin film - Google Patents
Magnetic thin film and application device including magnetic thin filmInfo
- Publication number
- SG11201607105PA SG11201607105PA SG11201607105PA SG11201607105PA SG11201607105PA SG 11201607105P A SG11201607105P A SG 11201607105PA SG 11201607105P A SG11201607105P A SG 11201607105PA SG 11201607105P A SG11201607105P A SG 11201607105PA SG 11201607105P A SG11201607105P A SG 11201607105PA
- Authority
- SG
- Singapore
- Prior art keywords
- thin film
- magnetic thin
- device including
- application device
- including magnetic
- Prior art date
Links
- 239000010409 thin film Substances 0.000 title 2
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0091—Magnetic properties, e.g. guiding magnetic flux
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/62—Record carriers characterised by the selection of the material
- G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
- G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
- G11B5/658—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing oxygen, e.g. molecular oxygen or magnetic oxide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/08—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers
- H01F10/10—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition
- H01F10/12—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys
- H01F10/123—Thin magnetic films, e.g. of one-domain structure characterised by magnetic layers characterised by the composition being metals or alloys having a L10 crystallographic structure, e.g. [Co,Fe][Pt,Pd] thin films
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Magnetic active materials
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2014129203A JP6375719B2 (en) | 2014-06-24 | 2014-06-24 | Magnetic thin films and applied devices including magnetic thin films |
PCT/JP2015/002519 WO2015198523A1 (en) | 2014-06-24 | 2015-05-19 | Magnetic thin film and application device including magnetic thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
SG11201607105PA true SG11201607105PA (en) | 2016-10-28 |
Family
ID=54937635
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201607105PA SG11201607105PA (en) | 2014-06-24 | 2015-05-19 | Magnetic thin film and application device including magnetic thin film |
Country Status (6)
Country | Link |
---|---|
US (1) | US10115890B2 (en) |
JP (1) | JP6375719B2 (en) |
CN (1) | CN106062900B (en) |
MY (1) | MY175040A (en) |
SG (1) | SG11201607105PA (en) |
WO (1) | WO2015198523A1 (en) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102015218328B4 (en) | 2015-09-24 | 2019-01-17 | Carl Zeiss Smt Gmbh | Optical system for field imaging and / or pupil imaging |
CN109155360A (en) * | 2016-02-05 | 2019-01-04 | 汉阳大学校产学协力团 | memory device |
JP6884322B2 (en) * | 2016-10-31 | 2021-06-09 | 国立大学法人福井大学 | Manufacturing method of two-dimensional optical scanning mirror device |
TWI626162B (en) * | 2017-06-07 | 2018-06-11 | 國立清華大學 | Texture inducing method for alloy films and the structure thereof |
JP2019047119A (en) * | 2017-09-04 | 2019-03-22 | Tdk株式会社 | Magnetoresistive effect element, magnetic memory, and magnetic device |
US10468592B1 (en) * | 2018-07-09 | 2019-11-05 | Applied Materials, Inc. | Magnetic tunnel junctions and methods of fabrication thereof |
CN110246656A (en) * | 2019-07-02 | 2019-09-17 | 西华大学 | A kind of multi-layer-coupled patterned magnetic film and preparation and test method |
JP2020115217A (en) * | 2020-03-24 | 2020-07-30 | 国立大学法人福井大学 | Two-dimensional optical scanning mirror device, two-dimensional optical scanning device and image projection device |
CN113460951B (en) * | 2021-07-06 | 2023-07-25 | 北方工业大学 | Active MEMS solid-state refrigeration device and manufacturing method thereof |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI222630B (en) | 2001-04-24 | 2004-10-21 | Matsushita Electric Ind Co Ltd | Magnetoresistive element and magnetoresistive memory device using the same |
JP4024499B2 (en) | 2001-08-15 | 2007-12-19 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic reproducing apparatus |
JP4686430B2 (en) * | 2002-03-28 | 2011-05-25 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic reproducing apparatus |
JP3749873B2 (en) * | 2002-03-28 | 2006-03-01 | 株式会社東芝 | Magnetoresistive element, magnetic head, and magnetic reproducing apparatus |
JP2005333106A (en) | 2004-04-20 | 2005-12-02 | Ken Takahashi | Switched-connection element and manufacturing method therefor, and device having switched-connection element |
JP2007150265A (en) * | 2005-10-28 | 2007-06-14 | Toshiba Corp | Magnetoresistive element and magnetic storage |
US20070096229A1 (en) | 2005-10-28 | 2007-05-03 | Masatoshi Yoshikawa | Magnetoresistive element and magnetic memory device |
US20080057350A1 (en) | 2006-09-01 | 2008-03-06 | Heraeus, Inc. | Magnetic media and sputter targets with compositions of high anisotropy alloys and oxide compounds |
JP2008098523A (en) * | 2006-10-13 | 2008-04-24 | Toshiba Corp | Magneto-resistance effect element, and magnetic memory |
JP5550007B2 (en) | 2008-12-05 | 2014-07-16 | 国立大学法人東北大学 | Magnetic thin film and manufacturing method thereof, and various applied devices using such a magnetic thin film |
JP4903277B2 (en) * | 2010-01-26 | 2012-03-28 | 株式会社日立製作所 | Magnetoresistive element, magnetic memory cell using the same, and random access memory |
JP5811672B2 (en) * | 2011-08-04 | 2015-11-11 | 富士電機株式会社 | Perpendicular magnetic recording medium and manufacturing method thereof |
JP2014056624A (en) | 2012-09-11 | 2014-03-27 | Fuji Electric Co Ltd | Thin film including ordered alloy and fabrication method of the thin film |
-
2014
- 2014-06-24 JP JP2014129203A patent/JP6375719B2/en active Active
-
2015
- 2015-05-19 CN CN201580011466.4A patent/CN106062900B/en active Active
- 2015-05-19 WO PCT/JP2015/002519 patent/WO2015198523A1/en active Application Filing
- 2015-05-19 MY MYPI2016703118A patent/MY175040A/en unknown
- 2015-05-19 SG SG11201607105PA patent/SG11201607105PA/en unknown
-
2016
- 2016-08-30 US US15/251,056 patent/US10115890B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
WO2015198523A1 (en) | 2015-12-30 |
CN106062900A (en) | 2016-10-26 |
MY175040A (en) | 2020-06-03 |
JP6375719B2 (en) | 2018-08-22 |
JP2016009753A (en) | 2016-01-18 |
US20160372657A1 (en) | 2016-12-22 |
CN106062900B (en) | 2018-03-23 |
US10115890B2 (en) | 2018-10-30 |
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