TWI749966B - Thin-film deposition apparatus - Google Patents

Abstract

The present disclosure relates to a thin-film deposition apparatus which has a chamber, a stage, at least one baffle and at least one shielding component. The stage is used to hold a substrate, and the baffle is used to prevent the backside coating of the substrate on the stage. The shielding component is higher than the baffle and used to shield the baffle, instead of the baffle receiving part of the target atom that is not deposited on the substrate. In this way, it is possible to prevent the target atom from depositing and forming a thin film on the baffle, thereby preventing the thin film that flows due to high temperature from flowing to the contact place between the baffle and the substrate from the baffle.

Description

Thin film deposition equipment

The present invention relates to a thin film deposition equipment, in particular to a kind of film that uses a shield to prevent target atoms from forming a thin film on the stop, so as to prevent the heated film from flowing to the contact between the stop and the substrate and cause a sticky sheet. Thin film deposition equipment.

In the integrated circuit manufacturing process, thin film deposition processes that usually require high-temperature heat treatment, such as chemical vapor deposition process (CVD) and physical vapor deposition process (PVD). The thin film deposition process is to subject the substrate to a high temperature heat treatment, so that the target atoms form a thin film on the surface of the substrate.

However, in the process of forming a thin film on the surface of the substrate, the material of the thin film may form defects, such as bumps or hillocks, on the substrate due to temperature accumulation and thermal stress. Especially when the thickness of the film is larger, the temperature will accumulate more, and it is easier to form defects on the substrate, thereby affecting the yield and reliability of the product.

In order to solve the above-mentioned problems, one method is to use an Electrostatic Chuck (ESC) to replace the traditional carrier. During the deposition process, the electrostatic chuck adsorbs the substrate through electrostatic force, and uses a cooling gas to blow the substrate on the electrostatic chuck to reduce the temperature of the substrate and reduce the temperature accumulation of the substrate, and reduce the influence of thermal stress. However, the electrostatic chuck is expensive and easily damaged, which greatly increases the cost of the deposition process compared with the traditional stage.

Another method is to use a stopper to fix the substrate on the carrier during the deposition process, and to deliver a cooling gas between the carrier and the substrate to reduce the temperature of the substrate. However, the target atoms will also deposit on the stopper and form a thin film. As the temperature accumulates in the process, the film on the stopper will melt and flow to the substrate or the contact between the stopper and the substrate, resulting in the substrate and the stopper. Adhere to each other and cause dirt to form on the substrate, thereby reducing the yield and reliability of the product.

Therefore, in order to overcome the shortcomings of the conventional technology, an embodiment of the present invention provides a thin film deposition apparatus in which a shielding member is provided above the blocking member of the fixed substrate. The shielding member can replace the target atoms in the part that the stopper receives, thereby reducing the probability of the target atoms being deposited on the shielding member, thereby reducing the possibility of dirt being formed on the substrate and reducing the probability of the substrate adhering to the shielding member.

Based on at least one of the foregoing objectives, the thin film deposition apparatus provided by the embodiment of the present invention includes a cavity, a carrier, at least one blocking member, and at least one shielding member. The cavity has an accommodating space, and the carrier and the stopper are located in the accommodating space. The carrier is used to carry at least one substrate, and the stopper is used to prevent back plating of the substrate on the carrier. The stopper has a main body and a cover ring, and the cover ring is a hollow disk body. The shielding member is higher than the blocking member and has a connecting part and a shielding part, wherein the shielding part is connected with the cavity through the connecting part. The shielding part is a hollow disc body, and the shielding part is concentric with the cover ring, wherein the first inner diameter of the shielding part is equal to or smaller than the second inner diameter of the cover ring, and the first outer diameter of the shielding part is larger than the first outer diameter of the cover ring. Two outer diameter.

Optionally, the shielding portion further includes a first protrusion to form a groove between the first protrusion and the connecting portion, and the depth of the groove is 1-20 mm.

Optionally, the shielding portion further includes a second protrusion to form a groove between the first protrusion and the second protrusion of the shielding portion.

Optionally, the connecting portion further includes a seat portion and a fixing portion, wherein the seat portion is connected to the cavity, and the fixing portion is connected to the shielding portion. The connecting portion further includes a groove, and the groove is located between the seat portion and the fixing portion.

Optionally, the shielding portion further includes a first convex portion to form a groove between the first convex portion and the seat portion.

Optionally, the shielding member further includes a second protrusion to form a groove between the first protrusion and the second protrusion of the shielding part.

Optionally, the shielding member further includes a first end, a second end, and a carrying area, wherein the first end is connected to the connecting portion, the second end and the first end are opposite to each other, and the carrying area is located at the first end and the second end between. The top of the second end is higher than the bearing area to form a groove between the second end and the connecting portion.

Optionally, the material of the shielding member is stainless steel, titanium or aluminum alloy.

Optionally, the thin film deposition equipment further includes at least one cooling circulation channel. The cooling circulation channel is in contact with the shield and is used for conveying cooling fluid to reduce the temperature of the shield.

Optionally, the thin film deposition equipment further includes a target shutter, which is located above the shutter.

In short, the thin film deposition equipment provided by the embodiments of the present invention can receive part of the target atoms through the shielding member, so as to reduce the deposition of target atoms on the stopper, thereby reducing the defects caused to the substrate during deposition. The market where demand is deposited has an advantage.

In order to make the above and other objects, features and advantages of the present invention more comprehensible, detailed descriptions are made as follows in conjunction with the accompanying drawings.

In order to fully understand the purpose, features and effects of the present invention, the following specific embodiments are used in conjunction with the accompanying drawings to give a detailed description of the present invention. The description is as follows.

First, please refer to FIG. 1, which is a schematic diagram of a thin film deposition apparatus according to an embodiment of the present invention. As shown in FIG. 1, the thin film deposition apparatus 1 has a cavity 11, a stage 13, at least one blocking member 15 and at least one shielding member 17. The cavity 11 has an accommodating space S, and the carrier 13 and the stopper 15 are located in the accommodating space S of the cavity 11, wherein the carrier 13 is used to carry at least one substrate W, and the stopper 15 is used to contact the carrier. The substrate W on the stage 13 is used to fix the substrate W on the stage 13. Furthermore, the stopper 15 is used to prevent back plating of the substrate W on the stage 13.

Specifically, the stopper 15 has a main body 151 and a cover ring 153. One end of the main body 151 is connected to the inner wall of the cavity 11, and the cover ring 153 forms a disc-shaped space. Specifically, the cover ring 153 is a hollow disk body. The carrier 13 is located at the vertical extension of the disc-shaped space formed by the stopper 15. When the carrier 13 is close to the stopper 15, the cover ring 153 of the stopper 15 will contact the substrate W on the carrier 13 to prevent the substrate W from falling or detaching from the carrier 13. In an embodiment, the main body 151 and the cover ring 153 of the stopper 15 may also be an integrally formed design.

In the thin film deposition process, a thin film is formed on the surface of the substrate W. Taking physical vapor deposition (PVD) sputter deposition as an example, a target T is usually arranged inside the cavity 11, and a target shield 19 is arranged below the periphery of the target T, wherein the target The material T and the substrate W face each other. The material of the target material T is, for example, but not limited to, aluminum-copper alloy, aluminum-silicon-copper alloy, pure aluminum, copper, titanium, silver, gold, nickel-vanadium alloy, tungsten, or titanium-tungsten alloy.

In the thin film deposition process, after the process gas is delivered to the accommodating space S of the cavity 11 (not shown), the target T and the substrate W are applied with a high voltage, so that the accommodating space between the target T and the substrate W S forms a high-voltage electric field gas, where the process gas is, for example, but not limited to, an inert gas. The high-voltage electric field dissociates the process gas in the accommodating space S between the target T and the substrate W, and generates plasma. The positive ions in the plasma will be attracted and accelerated by the negative voltage of the target T, and hit the surface of the target T, so that the target atoms that have obtained kinetic energy leave the surface of the target T and are deposited on the surface of the substrate W. Physical vapor deposition is only an embodiment of the present invention and is not a limitation of the scope of the present invention. The thin film deposition equipment of the present invention can also be applied to chemical vapor deposition.

In one embodiment, the thin film deposition apparatus 1 may be provided with a cooling gas input line (not shown), and the cooling gas is transported between the carrier 13 and the substrate W through the cooling gas input line, so that the cooling gas contacts the carrier 13 To reduce the temperature of the substrate W, the stopper 15 can block the substrate W on the stage 13 to prevent the substrate W from being blown off or displaced by the cooling gas.

The shielding member 17 of the thin film deposition apparatus 1 is higher than and shielding the shielding member 15, instead of the shielding member 15 to hold part of the target atoms that are not deposited on the substrate W. In this way, the formation of target atoms deposited on the shielding member 15 can be reduced. The thin film on the stopper 15 is small or nonexistent, and the film on the stopper 15 is not enough to flow from the stopper 15 to the contact point between the stopper 15 and the substrate W after being heated, thereby improving the adhesion between the stopper 15 and the substrate W. problem. The material of the shielding member 17 is, for example, but not limited to, stainless steel, titanium or aluminum alloy.

Specifically, the shielding member 17 has a connecting portion 171 and a shielding portion 173, wherein the shielding portion 171 is connected to the cavity 11 through the connecting portion 171. As shown in FIG. 1, the connecting portion 171 and the shielding portion 173 may be two members to form the shielding member 17, or, as shown in FIG. 2, the connecting portion 271 and the shielding portion 273 of the thin film deposition apparatus 2 may be integrally formed to form a shield Piece 27. Specifically, the shielding portion 173 is a hollow disk, and the shielding portion 173 is concentric with the cover ring 153 of the stopper 15. The shielding members 17 and 27 do not limit whether they are aligned with the blocking member 15, and the shielding members 17 and 27 can be protruding, aligned or retracted from the blocking member 15. Specifically, the diameter of the hollow area forming the shielding portion 173 of the hollow disk body is defined as the first inner diameter d1, and the diameter of the outer edge of the shielding portion 173 is defined as the first outer diameter d2, and further, the cover forming the hollow disk body The diameter of the hollow area of the ring 153 is defined as the second inner diameter d3, and the diameter of the outer edge of the cover ring 153 is defined as the second outer diameter d4. In one embodiment, the first inner diameter d1 of the shielding portion 173 is equal to or smaller than the second inner diameter d3 of the cover ring 153, and the first outer diameter d2 of the shielding portion 173 is greater than the second outer diameter d4 of the cover ring 153, so that The shielding portion 173 can completely shield the cover ring 153.

Please refer to FIG. 3, which is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 3 is substantially the same as the foregoing embodiment. In one embodiment, the shielding portion 373 of the shielding member 37 of the thin film deposition apparatus 3 further includes a first convex portion 372 to form a groove G3 located between the first convex portion 372 and the connecting portion 371, wherein the groove G3 is used for To receive part of the target atoms, and prevent the target atoms deposited on the shield 37 from being melted by heating and dripping onto the substrate W. In one embodiment, the depth d5 of the groove G3 (the vertical distance between the first convex portion 372 and the shielding portion 373) is 1-20 mm, which is favorable for receiving part of the target atoms. The first protrusion 372 may be located at one end of the shielding portion 373, but the present invention is not limited to this, and the first protrusion 372 may also be located at any place of the shielding portion 373.

Similarly, the connecting portion 371 and the shielding portion 373 may be two components to form the shielding member 37, or, as shown in FIG. 4, the connecting portion 471 and the shielding portion 473 of the thin film deposition apparatus 4 may be integrally formed to form the shielding member. 47, and the groove G4 is formed between the first protrusion 472 and the connecting portion 471 to receive part of the target atoms and prevent the target atoms deposited on the shielding member 47 from being melted by heating and dripping onto the substrate W.

Please refer to FIG. 5, which is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 5 is substantially the same as the foregoing embodiment. In one embodiment, the shielding part 573 of the shielding member 57 of the thin film deposition apparatus 5 further includes a first protrusion 572 and a second protrusion 574, so that a groove G5 is formed in the shielding part 573 and located at the first protrusion 572 and the second protrusion 572. Between the protrusions 574, the groove G5 is used to receive part of the target atoms and prevent the target atoms deposited on the shield 57 from being melted by heating and dripping onto the substrate W. The first protrusion 572 may be located at one end of the shielding portion 573, and the second protrusion 574 is located at the other end of the shielding portion 573, but the present invention is not limited to this. The first protrusion 572 and the second protrusion 574 It may be located anywhere in the shielding part 573.

Please refer to FIG. 6, which is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 6 is substantially the same as the foregoing embodiment. In one embodiment, the connecting portion 671 of the thin film deposition apparatus 6 further includes a seat portion 671 a and a fixing portion 671 b, wherein the seat portion 671 a is connected to the cavity 11, and the fixing portion 671 b is connected to the shielding portion 673. The connecting portion 671 further includes a groove G6 located between the seat portion 671a and the fixing portion 671b, wherein the groove G6 is used to receive part of the target atoms and prevent the target atoms deposited on the shield from dripping due to heat and melting. To the substrate W.

Similarly, the connecting portion 671 and the shielding portion 673 may be two components to form a shielding member, or, as shown in FIG. 7, the connecting portion 771 and the shielding portion 773 of the thin film deposition apparatus 7 may be integrally formed to form the shielding member 77. , And the groove G7 is formed between the shielding portion 773 and the connecting portion 771 to receive part of the target atoms and prevent the target atoms deposited on the shielding member 77 from being melted by heating and dripping onto the substrate W.

Please refer to FIG. 8. FIG. 8 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 8 is substantially the same as the foregoing embodiment. In one embodiment, the connecting portion 871 of the shielding member of the thin film deposition apparatus 8 further includes a seat portion 871a and a fixing portion 871b, wherein the seat portion 871a is connected to the cavity 11, and the fixing portion 871b is connected to the shielding portion 873, wherein the shielding portion 873 is also The first protrusion 872 is included to form a groove G8 between the first protrusion 872 and the seat 871a. Specifically, the groove G8 is formed by the shielding portion 873 of the shielding member and the connecting portion 871 together to receive part of the target atoms and prevent the target atoms deposited on the shielding member from being melted by heating and dripping onto the substrate W. . The first convex portion 872 may be located at one end of the shielding portion 873, but the present invention is not limited to this, and the first convex portion 872 may also be located anywhere on the shielding portion 873.

Similarly, the connecting portion 871 and the shielding portion 873 may be two components to form a shielding member, or, as shown in FIG. 9, the connecting portion 971 and the shielding portion 973 of the thin film deposition apparatus 9 may be integrally formed to form the shielding member 97. , And the groove G9 is formed between the first convex part 972 of the shielding part 973 and the connecting part 971 to receive part of the target atoms and prevent the target atoms deposited on the shielding part 97 from being melted by heating and dripping onto the substrate W up.

Please refer to FIG. 10, which is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 10 is substantially the same as the foregoing embodiment. In one embodiment, the connecting portion 1071 of the shielding member 107 of the thin film deposition apparatus 10 further includes a seat portion 1071a, a fixing portion 1071b, and a groove G10', wherein the seat portion 1071a is connected to the cavity 11, and the fixing portion 1071b is connected to the shielding portion 1073, The groove G10' is located between the seat portion 671a and the fixing portion 671b. Furthermore, the shielding portion 1073 further includes a first convex portion 1072 and a second convex portion 1074, so that a groove G10 is formed in the shielding portion 1073 and is located between the first convex portion 1072 and the second convex portion 1074. The groove G10' and the groove G10 are used to receive part of the target atoms and prevent the target atoms deposited on the shielding member 107 from being melted by heating and dripping onto the substrate W. The first convex portion 1072 may be located at one end of the shielding portion 1073, and the second convex portion 1074 is located at the other end of the shielding portion 1073, but the present invention is not limited by this, the first convex portion 1072 and the second convex portion 1074 It may be located anywhere in the shielding part 573.

Please refer to FIG. 11. FIG. 11 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 11 is substantially the same as the foregoing embodiment. In one embodiment, the shielding member 117 of the thin film deposition apparatus 11 includes a first end 1174, a second end 1172, and a carrying area 1173. The first end 1174 is connected to the connecting portion 1171, and the second end 1172 and the first end 1174 are mutually connected. In contrast, the carrying area 1173 is located between the first end 1174 and the second end 1172. The top of the second end 1172 is higher than the carrying area 1173 to form a groove G11 between the second end 1172 and the connecting portion 1171. The groove G11 is used to receive part of the target atoms and prevent the target atoms deposited on the shielding member 117 from being melted by heating and dripping onto the substrate W.

In the above embodiment, the thin film deposition apparatuses 1 to 11 may further include a cooling circulation channel 12, wherein the cooling circulation channel 12 contacts the connection part of the shielding member. The cooling circulation channel 12 is used to convey a cooling fluid to reduce the temperature of the shielding member, thereby accelerating the cooling of the target atoms deposited on the shielding member and forming a thin film on the shielding member, so as to prevent the target atoms from melting due to heat accumulation. Avoid dropping target atoms onto the substrate W.

In summary, compared with the prior art, the technical effects of the thin film deposition equipment described in the embodiments of the present invention are described as follows.

In the conventional technology, the stopper used to fix the substrate will be deposited by target atoms and form a thin film. As the temperature in the process accumulates, the film on the stopper will melt and flow to the substrate or the stopper and the substrate The contact point of the substrate can cause the substrate to be dirty or the substrate and the stopper to adhere to each other, thereby reducing the yield and reliability of the product. On the other hand, the thin film deposition equipment of the present invention shields the stopper through the shielding member to prevent the stopper from being deposited by too many target atoms. When the film of the stopper is reduced, it can reduce the contamination of the substrate by the heated and flowing film, thereby improving The quality of the product.

The present invention has been disclosed in preferred embodiments above, but those skilled in the art should understand that the above-mentioned embodiments are only used to describe the present invention and should not be construed as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to the foregoing embodiments should be included in the scope of the present invention.

1, 2, 3, 4, 5, 6, 7, 8, 9, 10, 11: thin film deposition equipment

11: Cavity

13: Stage

15: stop

151: Subject

153: cover ring

17, 27, 37, 47, 57, 77, 97, 107, 117: shield

171, 271, 371, 471, 571, 671, 771, 871, 971, 1071, 1171: connecting part

173, 273, 373, 473, 573, 673, 773, 873, 973, 1073: shielding part

18: Cooling circulation channel

19: Target shutter

1172: second end

1173: bearing area

1174: first end

372, 472, 572, 872, 972, 1072: first convex part

574, 1074: second convex part

d1: first inner diameter

d2: first outer diameter

d3: second inner diameter

d4: second outer diameter

d5: depth

G3, G4, G6, G7, G8, G9, G10’, G11: Groove

G5, G10: groove

S: accommodating space

T: target

W: substrate

Fig. 1 is a schematic diagram of a thin film deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 3 is a schematic diagram of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 4 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 5 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 6 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 7 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 8 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 9 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 10 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 11 is a schematic diagram of a thin film deposition apparatus according to another embodiment of the present invention.

1: Thin film deposition equipment

11: Cavity

13: Stage

15: stop

151: Subject

153: cover ring

17: Shield

171: Connection

173: Shading Department

18: Cooling circulation channel

19: Target shutter

d1: first inner diameter

d2: first outer diameter

d3: second inner diameter

d4: second outer diameter

S: accommodating space

T: target

W: substrate

Claims (9)

A thin film deposition equipment includes: a cavity with an accommodating space; a stage located in the accommodating space and used to carry at least one substrate; at least one stopper located in the accommodating space of the cavity , The blocking member has a main body and a cover ring, and the cover ring is a hollow disk body, and the blocking member is used to prevent back plating of the substrate on the carrier; and at least one shielding member higher than the blocking member , And has a connecting portion and a shielding portion, the shielding portion is connected to the cavity through the connecting portion, wherein the shielding portion is a hollow disc body, and the shielding portion and the cover ring are co-centered, and the shielding portion is also Comprising a first convex portion to form a groove between the first convex portion and the connecting portion, wherein a depth of the groove is 1-20 mm; wherein a first inner diameter of the shielding portion is equal to Or smaller than a second inner diameter of the cover ring, and a first outer diameter of the shielding portion is larger than a second outer diameter of the cover ring. The thin film deposition apparatus according to claim 1, wherein the shielding portion further includes a second convex portion, so that a groove is formed in the shielding portion between the first convex portion and the second convex portion. The thin film deposition apparatus according to claim 1, wherein the connecting portion further includes a seat portion and a fixing portion, the seat portion is connected to the cavity, and the fixing portion is connected to the shielding portion. A thin film deposition equipment includes: a cavity with an accommodating space; a carrier located in the accommodating space and used for carrying at least one substrate; At least one stopper is located in the accommodating space of the cavity, the stopper has a main body and a cover ring, and the cover ring is a hollow disk body, and the stopper is used to prevent the substrate on the carrier And at least one shielding member, higher than the shielding member, and having a connecting portion and a shielding portion, the shielding portion is connected to the cavity through the connecting portion, wherein the shielding portion is a hollow disk body, and The shielding portion and the cover ring are concentric, wherein the connecting portion further includes a seat portion and a fixing portion, the seat portion is connected to the cavity, and the fixing portion is connected to the shielding portion, wherein the connecting portion further includes a groove located at Between the seat portion and the fixed portion; wherein a first inner diameter of the shielding portion is equal to or smaller than a second inner diameter of the cover ring, and a first outer diameter of the shielding portion is greater than a first diameter of the cover ring Two outer diameters; wherein the shielding portion also includes a first convex portion to form a groove located between the first convex portion and the seat. The thin film deposition apparatus according to claim 4, wherein the shielding member further includes a second convex portion, so that a groove is formed in the shielding portion between the first convex portion and the second convex portion. A thin film deposition equipment includes: a cavity with an accommodating space; a stage located in the accommodating space and used for carrying at least one substrate; at least one stopper located in the accommodating space of the cavity , The blocking member has a main body and a cover ring, and the cover ring is a hollow disk body, and the blocking member is used to prevent back plating of the substrate on the carrier; and at least one shielding member higher than the blocking member , And has a connecting portion and a shielding portion, the shielding portion is connected to the cavity through the connecting portion, wherein the shielding portion is a hollow disk body, And the shielding portion and the cover ring are co-centered, wherein the connecting portion further includes a seat portion and a fixing portion, the seat portion is connected to the cavity, and the fixing portion is connected to the shielding portion, wherein the connecting portion further includes a groove Located between the seat portion and the fixing portion; wherein a first inner diameter of the shielding portion is equal to or smaller than a second inner diameter of the cover ring, and a first outer diameter of the shielding portion is greater than a second inner diameter of the cover ring The second outer diameter; wherein the shielding member further includes a first end, a second end, and a bearing area, the first end is connected to the connecting portion, the second end and the first end are opposite to each other, and the bearing area Located between the first end and the second end, wherein the top of the second end is higher than the carrying area to form a groove between the second end and the connecting portion. The thin film deposition apparatus according to claim 6, wherein the material of the shielding member is stainless steel, titanium or aluminum alloy. The thin film deposition apparatus according to claim 6, further comprising at least one cooling circulation channel in contact with the shielding member, and the cooling circulation channel is used for conveying a cooling fluid to lower the temperature of the shielding member. The thin film deposition apparatus according to claim 6, further comprising a target shutter, located above the shutter.

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