CN105369204A - Sputtering target - backing plate assembly - Google Patents

Sputtering target - backing plate assembly Download PDF

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Publication number
CN105369204A
CN105369204A CN201510477273.XA CN201510477273A CN105369204A CN 105369204 A CN105369204 A CN 105369204A CN 201510477273 A CN201510477273 A CN 201510477273A CN 105369204 A CN105369204 A CN 105369204A
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China
Prior art keywords
backing plate
sputtering target
target
sputtering
conjugant
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CN201510477273.XA
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CN105369204B (en
Inventor
高村博
铃木了
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JX Nippon Mining and Metals Corp
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JX Nippon Mining and Metals Corp
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0682—Silicides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy

Abstract

The invention realtes to a sputtering target - backing plate assembly, which is obtained by connecting a sputtering target and a backing plate with welding material. The assembly is characterized in that the welding material on the periphery of the sputtering target and the backing plate is covered by linear material with a melting point between 600 and 3500 DEG C and a cross section in the shape of a circle, an ellipse or a rectangle. The invention provides technology which can effectively inhibit arc discharge and powder generating due to exposion of the welding material between the sputtering target and the backing plate when joining the sputtering target and the backing plate.

Description

Sputtering target backing plate conjugant
Technical field
The present invention relates to the sputtering target backing plate conjugant that arc-over produces or powder produces suppressed when using welding material sputtering target and backing plate to be engaged.
Background technology
One of film forming method of semiconducter device is sputtering.But in recent years, along with the development of the miniaturization to nm regime, become more and more stricter in the management of sputtering medium silt.Therefore, even if for the method implemented all the year round, also need again to investigate, find out countermeasure to reduce the powder in sputtering.
For sputtering target, the joint of its target material and backing plate is roughly divided into two kinds.One is called diffusion-bondingmethod, will fit in a vacuum and the target material enclosed and backing plate material under high pressure, are at a proper temperature heat-treated, and makes bi-material spread mutually thus, thus makes it engage.
Another kind is inserted between target and backboard plate as welding material by the low melting materials such as In, Sn alloy, makes it fit and engage, that is, weld (solderbonding) method.For the former diffusion-bondingmethod, have the following advantages: there is not the material beyond target material and backing plate material and be clean, and the heat resisting temperature at junction surface is higher than the situation of the use welding material of the latter.Therefore, be also suitable for high-power sputtering, and be applied to the sputtering target that Ti, Al, Cu, Ta, Co etc. mainly comprise metallic substance.
On the other hand, for semiconductor material as silicon (Si), germanium (Ge), oxide material is as PZT (Pb (Zr, Ti) O 3), HfO 2, La 2o 3, MgO etc., because it is the problem in hard brittle material or other material behavior, diffusion bond can not be carried out, also make sputtering target by welding process now.
In backing plate material, mainly use thermal conductivity large and oxygen free copper, copper alloy, aluminium alloy that cooling efficiency is excellent, also use other metal (comprising alloy) material.
In the sputtering target made by welding process, use the state that the weld material layer observed from the side of the target of tabular and backing plate exposed in former state in the past (see figures.1.and.2 a).
In this case, for the welding material being positioned at top layer, although sometimes in order to realize reducing sputtered, flow out and prune some, final weld material layer be in can see, namely be exposed to periphery from the periphery (outside) of target and backing plate state (with reference to the b, c) of Fig. 2.
Its thickness is adjusted to the scope of 0.1mm ~ 1.2mm by such weld material layer usually.Particularly when the thermal expansion difference of target material and backing plate is large, when the flexural strength of target material is little, in order to keep buffering effect, often welding material is adjusted to thicker.
Enumerate centered by target above for the target-target/backing plate conjunction element (also referred to as " assembly ") of semi-conductor, i.e. disk (disk) shape, about cross section structure, the thickness of welding material, visible too in square (rectangle) target for FPD, solar use such as ITO, IGZO.
The conjugant (assembly) of tabular target and backing plate is directly installed in sputter equipment (chamber).Consequently, sputter equipment (chamber) is arranged in from a part for the weld material layer observed by the side of tabular target and backing plate.
Usually, when sputtering normally runs, even become the weld material layer exposing state, there is not special problem yet.This is because usually when target as sputter, its roundabout side to target-backing plate of part, then separates out (depositing) again, thus cover, suppress weld material layer, therefore there will not be detrimentally affect in film forming substrate-side.
But the plasma density in the chamber of sputter equipment fluctuates, although seldom, the weld material layer between the target of tabular and backing plate is sputtered sometimes.In addition, sometimes due to the impurity in target, corrode time the existence of jut that formed etc. and the unexpected arc-over occurred hits weld material layer, they form powder in substrate-side sometimes.
In the past, the major cause that powder produces is other reason was main (domination), and when the wiring width of sputtered film is wide, above-mentioned frequency is low, and the impact of a small amount of powder is little, therefore can not become special problem.But the nowadays miniaturization development of semi-conductor, and the high purity of target material, densification development, therefore need the generation strictly suppressing powder.In this, for the structure of the target-backing plate in the past and manufacture method, this problem can not fully have been solved.
The bonded structure that Patent Document 1 discloses following high frequency sputtering target shown below: the high frequency sputtering target 3 be engaged with each other by adhesives 4 and target electrode 5 are staying the region of spaced inner side to have junction surface 11 apart from their outer peripheral edge, target electrode has the discrepancy in elevation 10 in the outside on junction surface 11, the chimeric annular component comprising conductive material in the gap formed between target thus, contacts with target or target electrode respectively to make it.
But, in this case, need on target, make the discrepancy in elevation 10, therefore, the problem that the service efficiency that there is target is deteriorated.In addition, when processing the circular discrepancy in elevation 10, if do not processed uniformly, then producing space at edge part, because edge part becomes many, therefore there is the shortcoming causing powder to produce.
In addition; describe in following patent documentation 2 " a kind of multi-split sputtering target; it is formed by being utilized by multiple target structure the soldering tin material of low melting point to engage; wherein; along the bottom of the cutting part formed by adjacent target material, arrange the protecting materials of the wire of the height of less than 1/10 of the height of target surfaces from backing plate surface in the mode not exposing soldering tin material " (see claim 1).
But in this case, because the protecting materials of wire exposes on target, the impact of the pollution thus caused by protecting materials is many, think that this carries out meeting grow along with sputtering.In addition, when producing gap between protecting materials and segmentation target, also there is the problem of the leakage that soldering tin material likely occurs.
In view of above aspect, the invention provides a kind of sputtering target backing plate conjugant that can effectively suppress the powder when using welding material sputtering target and backing plate to be engaged to produce.
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 8-291382 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2014-129559 publication
Summary of the invention
Invent problem to be solved
In semiconductor applications, along with the development of miniaturization, stability during sputtering, the management of powder become very strict.The present application solves the problem produced when using welding material sputtering target and backing plate to be engaged, and provides one effectively suppress powder to produce and can not pollute the sputtering target backing plate conjugant of sputter equipment (chamber) environment.
For the means of dealing with problems
In order to solve the problem, provide following invention.
1) a kind of sputtering target backing plate conjugant, its sputtering target backing plate conjugant sputtering target and backing plate being engaged and obtain for using welding material, it is characterized in that, be that the filamentary material of 600 ~ 3500 DEG C covers by the periphery fusing point of the welding material between sputtering target and backing plate.
2) as above-mentioned 1) as described in sputtering target backing plate conjugant, it is characterized in that, the axial cross section shape of filamentary material is circular, oval or rectangle.
3) as above-mentioned 1) ~ 2) according to any one of sputtering target backing plate conjugant, it is characterized in that, sputtering target is for being selected from more than one materials in semiconductor material, oxide material, metallic substance, silicon carbide (SiC) material.
4) as above-mentioned 3) as described in sputtering target backing plate conjugant, it is characterized in that, described semiconductor material is silicon (Si) or germanium (Ge).
5) as above-mentioned 3) as described in sputtering target backing plate conjugant, it is characterized in that, described oxide material is Al 2o 3, PZT (Pb (Zr, Ti) O 3), HfO 2, La 2o 3, MgO, ITO or IGZO.
6) as above-mentioned 3) as described in sputtering target backing plate conjugant, it is characterized in that, described metallic substance is indium, molybdenum or tungsten.
7) as above-mentioned 1) ~ 6) according to any one of sputtering target backing plate conjugant, it is characterized in that, backing plate comprises the material being selected from oxygen free copper, copper alloy, aluminium alloy, titanium, SUS or molybdenum.
8) as above-mentioned 1) ~ 7) according to any one of sputtering target backing plate conjugant, it is characterized in that, welding material comprises the material being selected from indium (more than 2N), In-Sn alloy (Sn:60 ~ 90 atom %) or Sn-Ag alloy (Ag:3 ~ 20 atom %).
9) as above-mentioned 1) ~ 8) according to any one of sputtering target backing plate conjugant, it is characterized in that, filamentary material comprises the material being selected from aluminium (more than 4N), titanium (more than 4N), molybdenum (more than 3N), copper (more than 4N), copper alloy (CuZn, CuCr, C18000 (CuNiSiCr)) or tungsten (more than 4N).
10) as above-mentioned 1) ~ 9) according to any one of sputtering target backing plate conjugant, it is characterized in that, filamentary material is the material containing more than one compositions be selected from semiconductor material, oxide material, metallic substance, silicon carbide (SiC) material.
11) as above-mentioned 1) ~ 10) according to any one of sputtering target backing plate conjugant, it is characterized in that, the surfaceness of the outside surface of filamentary material is Ra2 ~ 10 μm.
12) as above-mentioned 1) ~ 11) according to any one of sputtering target backing plate conjugant, it is characterized in that, the upper surface of the backing plate of the insertion section as filamentary material is provided with groove.
13) a kind of manufacture method of sputtering target backing plate conjugant, it is characterized in that, after using welding material sputtering target and backing plate to be engaged or when engaging, the periphery fusing point of the welding material between sputtering target and backing plate is 600 ~ 3500 DEG C and axial cross section shape is filamentary material that is circular, oval or rectangle covers.
14) as above-mentioned 13) as described in the manufacture method of sputtering target backing plate conjugant, it is characterized in that, fusing point is 600 ~ 3500 DEG C and axial cross section shape is circular, oval or relative to the thickness of the welding material between sputtering target and backing plate, the thickness of the filamentary material of rectangle is set as that (filamentary material thickness)/(welding material thickness)=100 ~ 130% engage.
Invention effect
As mentioned above, the present invention has following structure: after using welding material sputtering target and backing plate to be engaged or when engaging, the material of rope form higher than welding material for the periphery fusing point of the welding material between sputtering target and backing plate or wire is covered, can prevent welding material from dispersing to the direction of film forming substrate thus, effectively suppress the generation of powder.
Thus, even if in high-power sputtering than ever, also have can uniformly film forming, reduce disqualification rate and the significant effect such as can to enhance productivity.In addition, the sputtering target of the high cleanliness of the environment do not polluted in sputter equipment can also be provided.
Accompanying drawing explanation
Fig. 1 be a part of cross section structure of the target-target/backing plate conjunction element represented by welded joint outline figure.
Fig. 2 is the explanatory view of the form of the weld part of target (TG)-backing plate (BP) conjugant represented in the past.
Fig. 3 is the explanatory view of an example of the weld part representing target of the present invention (TG)-backing plate (BP) conjugant.
Fig. 4 be the result of the powder number of 1 kilowatt-hour ~ 10 kilowatt-hour representing embodiment 1 figure (in figure a), represent the figure (b in figure) of result of the powder number of 1 kilowatt-hour ~ 10 kilowatt-hour of comparative example 1.
Fig. 5 be the result of the powder number of 1 kilowatt-hour ~ 10 kilowatt-hour representing embodiment 2 figure (in figure a), represent the figure (b in figure) of result of the powder number of 1 kilowatt-hour ~ 10 kilowatt-hour of comparative example 2.
Embodiment
Known as sputtering method: in the sputter equipment importing Ar gas, with target side for negative electrode, to be anode with substrate-side, both apply voltage, drive target out of by the impact of Ar ion pair target, based on the sudden method be coated to substrate of target; Or from the atomizing/ionizing of target sputtering, the what is called of then carrying out sputtering is from the coating method sputtered.
In most cases, sputtering target engages with backing plate, and is cooled by this backing plate, thus prevents the temperature anomaly of target from rising, and can carry out stable sputtering.In such sputter equipment, backing plate usually uses heat conductance good and has the material of some strength.
Herein, sputtering target is the material for sputtering, in the present invention, for containing being selected from Semiconducting Silicon Materials (Si) or germanium (Ge); Oxide material Al 2o 3, PZT (Pb (Zr, Ti) O 3), HfO 2, La 2o 3, MgO, ITO or IGZO; Metallic substance indium, molybdenum or tungsten; More than one materials in silicon carbide (SiC) material.
The material of backing plate is suitably selected according to sputtering target, uses oxygen free copper, copper alloy, aluminium alloy, titanium, SUS or molybdenum, but sometimes also uses other metal (comprising alloy) material.
In FIG, the example of the structure of common target-target/backing plate conjunction element by welded joint is shown.Structure shown in Fig. 1 has welding material onto the backing plate, and welding material has target.The thickness of weld material layer is generally about 0.1mm ~ about 1.2mm.
Herein, welding material refers to the material for engaging sputtering target and backing plate, the pure In (more than 2N) of main use, In-Sn alloy (Sn:60 ~ 90 atom %), Sn-Ag alloy (Ag:3 ~ 20 atom %).Their fusing point can be grasped according to phasor, can grasp pure In and be about 156 DEG C, and In-Sn alloy is about 150 DEG C ~ about 220 DEG C, and Sn-Ag alloy is about 220 DEG C ~ about 350 DEG C.
Representational cross section structure near the circumference of the target-target/backing plate conjunction element of type in the past shown in Figure 2.Fig. 2 is by the enlarged view of the joint interface periphery shown in the dotted line part of Fig. 1.Situation a) of Fig. 2 is the most common structure, does not have possibility to become the discrepancy in elevation or the jut of arc-over starting point in target and backing plate, and welding material is filled with same diameter and surface is smooth.Have O shape ring in the trapezoid space of Fig. 1, be equivalent environment than this O shape ring inside when sputtering, therefore the periphery of above-mentioned welding material is exposed in sputter equipment (chamber).
Therefore, there is the situation that sputtering or few arc-over occurred hit welding material, the b as Fig. 2 to reduce welding material), the c of Fig. 2) shown in, sometimes also welding material is filled in the mode less than the diameter of target.But in the method, the problem that welding material exposes does not obtain basic solution, and in the bight of target and sputtering, easily producing the stripping of arc-over, again deposited film, is not the countermeasure of final minimizing powder.
The present invention illustrates the scheme for suppressing such powder resulting from welding material to produce.That is, propose in the sputtering target backing plate conjugant using welding material sputtering target and backing plate to be engaged, by the scheme that material higher than welding material for the periphery fusing point of the welding material between sputtering target and backing plate covers.Its form as shown in Figure 3.
Herein, by the high material configuration of the fusing point of periphery that will cover this welding material around welding material, dispersing and reducing the powder in sputtering of low melting material can be suppressed.The fusing point of welding material is about 130 DEG C ~ about 150 DEG C as previously mentioned, as the material covering welding material, higher than this fusing point 100 DEG C.Preferred fusing point is more than 600 DEG C, and more preferably fusing point is more than 1000 DEG C, and selected fusing point is the material of 600 ~ 3500 DEG C.
When the material of selected material identical with sputtering target, the material containing more than one compositions be selected from semiconductor material, oxide material, metallic substance, silicon carbide (SiC) material can be used.When multiple composition may be contained as oxidate sintered body, can use and select and contain more than one materials formed.
When the material of selected material identical with backing plate, can select to be selected from aluminium (more than 4N), titanium (more than 4N), molybdenum (more than 3N), copper (more than 4N), copper alloy (CuZn, CuCr, C18000 (CuNiSiCr)) or tungsten (more than 4N) etc.
Herein, cover the size of the filamentary material of welding material, consider from its object, be preferably equal with the thickness (being 0.1 ~ 1.2mm in this application) of welding material thickness direction or more than it, that is, (the filamentary material thickness of covering welding material)/(welding material thickness)=100 ~ 130%.Herein, so-called thickness, is defined as thickness by the length in the direction seen above target under state target and backing plate welding material engaged.On the other hand, in the axial cross section of filamentary material, in order to prevent powder from producing, need to be 0.1 ~ 1.2mm, more preferably 0.2 ~ 1.5mm from the welding material orthogonal with above-mentioned thickness to the thickness of outside.
As the shape meeting these conditions, can for having the circle of or its above diameter equal with the thickness of welding material thickness direction or ellipse (major diameter equal with welding material thickness or its more than), rectangle (at least one length of side equal with welding material thickness or its more than).
In the present invention, the outer peripheral edge substantially flat of target, target is not formed the spatial portion (discrepancy in elevation portion) for loading the high material of fusing point.This is because if make discrepancy in elevation portion on target, then the service efficiency of target is deteriorated.Because if make the circular discrepancy in elevation, then, when not carrying out evenly processing, produce space at edge part, and then edge part becomes many, thus causes powder to produce in addition.
The material that the fusing point of covering periphery is higher than welding material uses filamentary material usually, but this just uses the material of such shape in order to easily operate, and the shape for the material covering periphery has no particular limits.The typical example of filamentary material of the present invention shown in Figure 3.
The d of Fig. 3) represent that cross section is circular material substantially.This is the representative configurations of rope form of the present invention or filamentary material.Become, on the whole periphery of target, pit is formed to weld material layer, then insert the structure of the fusing point material higher than welding material.
Even if the welding materials such as indium at room temperature also have deformability, even therefore the shape of pit is uneven a little, by press-in rope form or filamentary material, its surface location also can be identical with the diameter of target, backing plate.
The end of rope form or filamentary material with around time length just cut off, can directly put into along weld material layer.In addition, can perforate on weld material layer, a part for end is inserted the center position of target and fixing.
The e of Fig. 3) in, the cross section with filamentary material is circular material substantially, but is provided with on the backing plate of the insert division of this filamentary material for preventing the groove flown out.Due to the start and stop of sputtering, temperature can raise and reduce, and therefore target material repeatedly expands and shrinks.The usual behavior is larger than the backing plate of directly cooling, and the power therefore filamentary material being extruded into outside works.
Such structure has the effect that more stably can keep filamentary material, even its end with around time length just cut off, then directly insert the simple structure of weld material layer, also can fully reduce the risk flown out in sputter process.
In addition, the f of Fig. 3) for using the situation of ellipse (the smooth noodles shape) material of lengthwise.In this case, due to the edge part of target and backing plate can be reduced, thus there is the effect that can more effectively suppress arc-over to produce.
About example in this case, although be used in the upper long oval material of longitudinal direction (target and backing plate direction), but will the diameter of larger than welding material thickness more than 10% be had on the contrary and cross section is circular material substantially inserts between target and backing plate while making rope form or filamentary material viscous deformation, and also can suppress to fly out.In this case, circular material is out of shape in the horizontal, therefore between target and backing plate, forms laterally slightly long ellipse.The present invention also comprises this situation.
As the material that the fusing point of the periphery of such covering welding material is high, the material same with backing plate can be used, i.e. oxygen free copper, copper alloy, aluminium alloy, titanium, SUS, molybdenum etc.And, by the high material configuration of the fusing point of the periphery by this covering welding material around welding material, dispersing and reducing the powder in sputtering of low melting material can be suppressed.In addition, by the selected material same with backing plate, weld material layer also may be interpreted as a part for backing plate in appearance, is improving the advantage that also can effectively utilize in the apparatus design of sputtering yield even if having.
In addition, the material that the fusing point of the periphery of covering welding material is high also can use the material same with target material.In this case, can it is easily understood that, even if plasma density produces fluctuation when sputtering, when the part evaporation of welding material or the abnormal conditions such as sputtered occur, because the surrounding of welding material covers with the material same with target, even if therefore it is sputtered, be also not easy to cause powder to increase.
When being difficult to obtain the filamentary material same with target material, composition, purity are similar.When target material is semi-conductor, oxide compound, there is no filamentary material, in addition, in the situation (Ti, Al, Cu, Ta) of common metal, the situation of diffusion bond is many, but, particularly when W, Mo, sometimes may not be such, become the example of the application material same with target material.
The surfaceness covering the outside surface of the fusing point of the periphery material higher than welding material is Ra2 ~ 10 μm, preferably increases surfaceness.This be in order to suppress sputter time from target disperse the target formed to side deposited film again peel off.As a rule, there is not such dispersing to the phenomenon of side from target, but even risk little like this, by having such surface tissue, can reduce the generation frequency of powder yet.
When manufacturing sputtering target backing plate conjugant, by after using welding material to engage sputtering target and backing plate or when engaging, filamentary material higher than welding material for the periphery fusing point of the welding material between sputtering target and backing plate being covered and can realize.
By the thickness of filamentary material higher than welding material for fusing point is set as more than 10% of the thickness of the welding material between sputtering target and backing plate, and can inserts in gap while making its plastic deformation and manufacture.
In addition, when make low thermal expansion material, material that flexural strength is low target, thicken the weld material layer between target and backing plate in the mode producing buffering effect, therefore welding material to expose area large, thus in the past with the excessive risk that powder produces.
But, as long as filamentary material is to cover around welding material with the equal above width of welding material thickness, the effect suppressing powder to produce will be shown more significantly.The present patent application comprises such situation.
Embodiment
Based on embodiment and comparative example, the present application is described.It should be noted that, the present embodiment is only an example, not the present invention is only limitted to this example.That is, the present invention also comprises alternate manner or distortion.
(embodiment 1)
Discoid silicon single crystal (Si) target of diameter 330mm and discoid oxygen free copper (OFC) backing plate are carried out engaging (bonding) in the mode that the average thickness of the indium (In) as welding material is 0.28mmt.
Then, by the indium welding material existed between target and backing plate, the one-sided 0.28mm that prunes from the side of target, forms pit simultaneously on whole periphery.
Then, by diameter 0.3mm and the copper cash resin-made scraper of purity 4N embed in this pit, thus obtain sputtering target backing plate assembly.Then, this assembly is installed in sputter equipment, implements sputtering, and detect the generation of powder.
In the evaluation of powder, with power 2000W in the upper film forming of false sheet (dummywafer), simultaneously often through 1 kilowatt-hour, put into control wafer (monitorwafer), now, sputter under 500W, the condition of 50 seconds, this wafer powder counter is detected to the powder number being greater than 0.2 micron.
Fig. 4 a) in, the result of this powder number of 1 kilowatt-hour ~ 10 kilowatt-hour is shown.Under this condition that the copper cash of weld material layer 4N is covered, average powder number during 10 kilowatt-hours is 8.6, and the average powder number that can reduce later half 7 kilowatt-hours (accumulative sputtering 4 ~ 7 kilowatt-hour) of the impact of the initial surface condition of sputter face is 6.0.
(comparative example 1)
Discoid silicon single crystal (Si) target of diameter 330mm and discoid oxygen free copper (OFC) backing plate are carried out engaging (bonding) in the mode that the average thickness of the indium (In) as welding material is 0.28mmt.
Then, for indium layer, carrying out regulating to make with discoid target is same diameter, and row relax of going forward side by side is to make not having the discrepancy in elevation with backing plate.
Then be installed in sputter equipment, in mode similarly to Example 1, about the evaluation of powder, every 1 kilowatt-hour, puts into control wafer, and detects powder number.
B at Fig. 4) shown in powder produce the result of number.Average powder number during 10 kilowatt-hours is 14.1, and the average powder number of later half 7 kilowatt-hours is 16.3.
From above, compared with comparative example 1, embodiment 1 has the effect of the powder number on the wafer after reducing film forming, under the sputtering condition particularly after the impact of removing initial surface condition, shows this effect significantly.
(embodiment 2)
By discoid silicon single crystal (Si) target of diameter 330mm and discoid molybdenum backing plate, carry out engaging (bonding) in the mode that the average thickness of the indium (In) as welding material is 0.45mmt.
At the upper surface of backing plate, to enter inner side 0.3mm from all genesis for basic point, the groove of the wide 0.2mm of processing, dark 0.1mm in advance.
Then, by the indium welding material one-sided 0.5mm that prunes from the side of target existed between target and backing plate, comprise the indium clawing and enter in above-mentioned groove, on whole periphery, form pit simultaneously.
Then, the diameter 0.6mm of surface roughening to Ra5 μm will be carried out with sand paper and the molybdenum wire of purity 3N5, and embed in this pit with resinous scraper, thus obtain sputtering target backing plate assembly.Then, this assembly is installed in sputter equipment, implements sputtering, and detect the generation of powder.
In the evaluation of powder, with power 2000W film forming on false sheet, simultaneously often through 1 kilowatt-hour, put into control wafer, now, sputter under 500W, the condition of 50 seconds, this wafer powder counter is detected to the powder number being greater than 0.2 micron.
That Fig. 5 a) is the figure of the result of this powder number that 1 kilowatt-hour ~ 10 kilowatt-hour is shown.Under the condition covered by the molybdenum wire of weld material layer 3N5, the average powder number during 10 kilowatt-hours is 8.9, and the average powder number that can reduce later half 7 kilowatt-hours of the impact of the initial surface condition of sputter face is 6.7.
(comparative example 2)
By discoid silicon single crystal (Si) target of diameter 330mm and discoid molybdenum backing plate, carry out engaging (bonding) in the mode that the average thickness of the indium (In) as welding material is 0.45mmt.Then, for indium layer, carrying out regulating to make with discoid target is same diameter, and row relax of going forward side by side is to make not having the discrepancy in elevation with backing plate.
Then be installed in sputter equipment, in mode similarly to Example 2, in the evaluation of powder, every 1 kilowatt-hour, puts into control wafer, detects powder number.Consequently, the average powder number during 10 kilowatt-hours is 16.6, and the average powder number of later half 7 kilowatt-hours is 17.4.B at Fig. 5) shown in powder produce the result of number.
From above, compared with comparative example 2, embodiment 2 has the effect of the powder number on the wafer after reducing film forming, under the sputtering condition particularly after the impact of removing initial surface condition, shows this effect significantly.
(embodiment 3-11, comparative example 3-11)
In addition, by the combination recorded in table 1, the powder number on the substrate after by the same film forming of sputtering test is compared.
Embodiment 3 uses circular 6N-Si target as target material, uses Mo (3N) material as backing plate material, uses Mo (3N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 7.8.
Comparative example 3 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 3, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 12.1.
Embodiment 4 uses circular 6N-Si target as target material, uses Ti material as backing plate material, uses Ti (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 9.5.
Comparative example 4 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 4, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 17.2.
Embodiment 5 uses oval 6N-Si target as target material, uses CuCr (Cr:1%) material as backing plate material, uses Cu (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 11.2.
Comparative example 5 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 5, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 19.9.
Embodiment 6 uses circular La 2o 3target, as target material, uses OFC material as backing plate material, uses Cu (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 128.
Comparative example 6 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 6, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 137.
Embodiment 7 uses circular MgO target as target material, uses CuZn (Zn:30%) material as backing plate material, uses Cu (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 150.
Comparative example 7 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 7, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 162.
Embodiment 8 uses circular W (4N) target as target material, uses OFC material as backing plate material, uses Cu (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 22.
Comparative example 8 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 8, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 29.
Embodiment 9 uses circular W (4N) target as target material, uses OFC material as backing plate material, uses W (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 24.
Comparative example 9 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 9, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 33.
Embodiment 10 uses oval ITO target as target material, uses OFC material as backing plate material, uses Cu (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 87.
Comparative example 10 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 10, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 96.
Embodiment 11 uses the IGZO target of rectangle as target material, uses C18000 (Ni:2 ~ 3, Si:0.4 ~ 0.8, Cr:0.1 ~ 0.6) material as backing plate material, uses Cu (4N) as the situation of filamentary material.Consequently, the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 103.
Comparative example 11 does not configure filamentary material and carries out situation about sputtering, other condition is identical with embodiment 11, and the average powder number of 1 ~ 10 kilowatt-hour of sputtering is 114.
Can know clearly from above-described embodiment with the contrast of comparative example: although different according to target material, powder number has to be had less more, and the situation under each condition with filamentary material, compared with not having the situation of filamentary material, obtains the tendency that powder number reduces.From material higher than welding material for the periphery fusing point of the welding material between sputtering target and backing plate can be confirmed above to cover the unusual effect brought.
Table 1
Industrial applicability
As mentioned above, when using welding material to engage sputtering target and backing plate, by material higher than welding material for the periphery fusing point of the welding material between sputtering target backing plate is covered, the excellent results that the powder that can obtain effectively suppressing resulting from welding material to expose between sputtering target and backing plate produces.

Claims (14)

1. a sputtering target backing plate conjugant, its sputtering target backing plate conjugant sputtering target and backing plate being engaged and obtain for using welding material, it is characterized in that, be that the filamentary material of 600 ~ 3500 DEG C covers by the periphery fusing point of the welding material between sputtering target and backing plate.
2. sputtering target backing plate conjugant as claimed in claim 1, is characterized in that, the axial cross section shape of filamentary material is circular, oval or rectangle.
3. the sputtering target backing plate conjugant according to any one of claim 1 ~ 2, is characterized in that, sputtering target is for being selected from more than one materials in semiconductor material, oxide material, metallic substance, silicon carbide (SiC) material.
4. sputtering target backing plate conjugant as claimed in claim 3, it is characterized in that, described semiconductor material is silicon (Si) or germanium (Ge).
5. sputtering target backing plate conjugant as claimed in claim 3, it is characterized in that, described oxide material is Al 2o 3, PZT (Pb (Zr, Ti) O 3), HfO 2, La 2o 3, MgO, ITO or IGZO.
6. sputtering target backing plate conjugant as claimed in claim 3, it is characterized in that, described metallic substance is indium, molybdenum or tungsten.
7. the sputtering target backing plate conjugant according to any one of claim 1 ~ 6, is characterized in that, backing plate comprises the material being selected from oxygen free copper, copper alloy, aluminium alloy, titanium, SUS or molybdenum.
8. the sputtering target backing plate conjugant according to any one of claim 1 ~ 7, it is characterized in that, welding material comprises the material being selected from indium (more than 2N), In-Sn alloy (Sn:60 ~ 90 atom %) or Sn-Ag alloy (Ag:3 ~ 20 atom %).
9. the sputtering target backing plate conjugant according to any one of claim 1 ~ 8, it is characterized in that, filamentary material comprises the material being selected from aluminium (more than 4N), titanium (more than 4N), molybdenum (more than 3N), copper (more than 4N), copper alloy (CuZn, CuCr, C18000 (CuNiSiCr)) or tungsten (more than 4N).
10. the sputtering target backing plate conjugant according to any one of claim 1 ~ 9, it is characterized in that, filamentary material is the material containing more than one compositions be selected from semiconductor material, oxide material, metallic substance, silicon carbide (SiC) material.
11. sputtering target backing plate conjugants according to any one of claim 1 ~ 10, it is characterized in that, the surfaceness of the outside surface of filamentary material is Ra2 ~ 10 μm.
12. sputtering target backing plate conjugants according to any one of claim 1 ~ 11, is characterized in that, the upper surface of the backing plate of the insertion section as filamentary material is provided with groove.
The manufacture method of 13. 1 kinds of sputtering target backing plate conjugants, it is characterized in that, after using welding material sputtering target and backing plate to be engaged or when engaging, the periphery fusing point of the welding material between sputtering target and backing plate is 600 ~ 3500 DEG C and axial cross section shape is filamentary material that is circular, oval or rectangle covers.
The manufacture method of 14. sputtering target backing plate conjugants as claimed in claim 13, it is characterized in that, fusing point is 600 ~ 3500 DEG C and axial cross section shape is circular, oval or relative to the thickness of the welding material between sputtering target and backing plate, the thickness of the filamentary material of rectangle is set as that (filamentary material thickness)/(welding material thickness)=100 ~ 130% engage.
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