CN214400688U

CN214400688U - Thin film deposition apparatus

Info

Publication number: CN214400688U
Application number: CN202120023464.XU
Authority: CN
Inventors: 易锦良; 林俊成; 郑耀璇
Original assignee: Xintianhong Xiamen Technology Co ltd
Current assignee: Xintianhong Xiamen Technology Co ltd
Priority date: 2021-01-06
Filing date: 2021-01-06
Publication date: 2021-10-15
Anticipated expiration: 2031-01-06

Abstract

The utility model relates to a film deposition equipment, it has cavity, microscope carrier, at least one keeps off piece and at least one shield. The carrying platform is used for carrying the substrate, and the blocking piece prevents the back plating of the substrate on the carrying platform. The shielding part is higher than the blocking part and is used for shielding the blocking part to replace the blocking part to contain and receive the target atoms which are not deposited on the substrate. Therefore, target atoms can be prevented from depositing on the stopper and forming a film, and the problem of sticking caused by the flowing film flowing from the stopper to the contact position of the stopper and the substrate due to heating can be prevented.

Description

Thin film deposition apparatus

Technical Field

The present invention relates to a film deposition apparatus, and more particularly to a film deposition apparatus using a shielding member to prevent target atoms from forming a film on a stopper, so as to prevent the heated film from flowing to the contact position between the stopper and a substrate to cause sticking.

Background

In integrated circuit fabrication, high temperature thermal processing is typically required for thin film deposition processes, such as Chemical Vapor Deposition (CVD) and Physical Vapor Deposition (PVD). The film deposition process is to make the target atoms form a film on the surface of the substrate under the heat treatment of high temperature.

However, in the process of forming a thin film on the surface of the substrate, the material of the thin film may form defects, such as bumps or hillocks (hillocks), on the substrate due to the accumulation of temperature and the influence of thermal stress. Particularly, when the thickness of the thin film is large, the temperature accumulation is increased, which may cause defects on the substrate, thereby affecting the yield and reliability of the product.

In order to solve the above problem, one method is to use an Electrostatic Chuck (ESC) instead of the conventional stage. In the deposition process, the electrostatic chuck adsorbs the substrate through electrostatic force, and cooling gas is blown to the substrate on the electrostatic chuck to reduce the temperature of the substrate, reduce the temperature accumulation of the substrate, and reduce the influence of thermal stress. However, electrostatic chucks are expensive and prone to damage, which significantly increases the cost of the deposition process compared to conventional carriers.

In another method, a stopper is used to fix the substrate to the carrier during the deposition process, and a cooling gas is supplied between the carrier and the substrate to reduce the temperature of the substrate. However, the target material atoms will also deposit on the stopper and form a film, and when the temperature is accumulated more in the process, the film on the stopper will melt and flow to the substrate or the contact part of the stopper and the substrate, so that the substrate and the stopper are adhered to each other and dirt is formed on the substrate, thereby reducing the yield and reliability of the product.

SUMMERY OF THE UTILITY MODEL

Therefore, in order to overcome the disadvantages of the prior art, an embodiment of the present invention provides a thin film deposition apparatus, in which a shielding member is disposed above a blocking member for fixing a substrate. The shielding member can replace target atoms of the receiving part of the stopper, so that the probability of deposition of the target atoms on the stopper is reduced, the formation of dirt on the substrate is reduced, and the probability of adhesion of the substrate to the stopper is reduced.

In view of at least one of the above-mentioned objects, an embodiment of the present invention provides a thin film deposition apparatus including a chamber, a stage, at least one stopper, and at least one shielding member. The cavity is provided with an accommodating space, the carrying platform and the stopper are positioned in the accommodating space, the carrying platform is used for carrying at least one substrate, and the stopper is used for preventing the back plating of the substrate on the carrying platform. The stopper is provided with a main body and a cover ring, and the cover ring is a hollow disc body. The shielding part is higher than the blocking part and is provided with a connecting part and a shielding part, wherein the shielding part is connected with the cavity through the connecting part. The shielding part is a hollow disc body and is concentric with the cover ring, wherein the first inner diameter of the shielding part is equal to or smaller than the second inner diameter of the cover ring, and the first outer diameter of the shielding part is larger than the second outer diameter of the cover ring.

Optionally, the shielding part further comprises a first convex part to form a groove between the first convex part and the connecting part, and the depth of the groove is 1-20 mm.

Optionally, the shielding part further comprises a second protrusion to form a groove between the first protrusion and the second protrusion of the shielding part.

Optionally, the connecting portion further includes a seat portion and a fixing portion, wherein the seat portion is connected to the cavity, and the fixing portion is connected to the shielding portion. The connecting part also comprises a groove, and the groove is positioned between the seat part and the fixing part.

Optionally, the shielding portion further comprises a first protrusion to form a groove between the first protrusion and the seat.

Optionally, the shield further comprises a second protrusion to form a groove between the first protrusion and the second protrusion of the shield.

Optionally, the shielding member further includes a first end, a second end and a carrying area, wherein the first end is connected to the connecting portion, the second end and the first end are opposite to each other, and the carrying area is located between the first end and the second end. The top of the second end is higher than the bearing area so as to form a groove between the second end and the connecting part.

Optionally, the shielding member is made of stainless steel, titanium or aluminum alloy.

Optionally, the thin film deposition apparatus further comprises at least one cooling circulation channel. The cooling circulation channel contacts the shield for conveying a cooling fluid to reduce the temperature of the shield.

Optionally, the thin film deposition apparatus further includes a target shutter located above the shield.

In short, the embodiment of the present invention provides a thin film deposition apparatus, which can receive target atoms through a shielding member to reduce deposition of the target atoms on the shielding member, and further reduce defects on a substrate during deposition, so that the apparatus has advantages in a market requiring thin film deposition.

Drawings

Fig. 1 is a schematic view of a thin film deposition apparatus according to an embodiment of the present invention.

Fig. 2 is a schematic view of a thin film deposition apparatus according to another embodiment of the present invention.

Fig. 3 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 4 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 5 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 6 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 7 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 8 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 9 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 10 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Fig. 11 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention.

Description of reference numerals: 1. 2, 3, 4, 5, 6, 7, 8, 9, 10, 11-thin film deposition equipment; 11-a cavity; 13-a stage; 15-a stopper; 151-a body; 153-cover ring; 17. 27, 37, 47, 57, 77, 97, 107, 117-shield; 171. 271, 371, 471, 571, 671, 771, 871, 971, 1071, 1171-connecting part; 173. 273, 373, 473, 573, 673, 773, 873, 973, 1073-shielding parts; 18-cooling circulation channel; 19-a target shutter; 1172-a second end; 1173-a carrier region; 1174-a first end; 372. 472, 572, 872, 972, 1072-first convex portion; 574. 1074-second convex portion; d 1-first inside diameter; d 2-first outside diameter; d 3-second inside diameter; d 4-second outside diameter; d 5-depth; g3, G4, G6, G7, G8, G9, G10', G11-grooves; g5, G10-grooves; s-an accommodating space; t-target material; w-substrate.

Detailed Description

For a fuller understanding of the objects, features and advantages of the present invention, reference should be made to the following detailed description taken in conjunction with the accompanying drawings.

Referring to fig. 1, fig. 1 is a schematic view of a thin film deposition apparatus according to an embodiment of the present invention. As shown in fig. 1, the thin film deposition apparatus 1 has a chamber 11, a stage 13, at least one stopper 15, and at least one shutter 17. The chamber 11 has an accommodating space S, and the stage 13 and the stopper 15 are located in the accommodating space S of the chamber 11, wherein the stage 13 is used for carrying at least one substrate W, and the stopper 15 is used for contacting the substrate W on the stage 13 to fix the substrate W on the stage 13. Further, the stoppers 15 prevent the back plating of the substrate W on the stage 13.

Specifically, the stopper 15 has a main body 151 and a cover ring 153, one end of the main body 151 is connected to the inner wall of the chamber 11, and the cover ring 153 forms a disc-shaped space. Specifically, the cover ring 153 is a hollow disk. The carrier 13 is located in a vertically extending position in the disk-shaped space formed by the stoppers 15. When the stage 13 approaches the stoppers 15, the cover ring 153 of the stoppers 15 may contact the substrate W on the stage 13 to prevent the substrate W from falling or falling off the stage 13. In one embodiment, the body 151 and the cover ring 153 of the stopper 15 may also be of an integrally formed design.

In the thin film deposition process, a thin film is formed on the surface of the substrate W. For Physical Vapor Deposition (PVD) sputtering, a target T is typically disposed inside the chamber 11, and a target shield 19 is disposed below the periphery of the target T, wherein the target T and the substrate W face each other. The material of the target T is, for example, but not limited to, aluminum copper alloy, aluminum-silicon-copper alloy, pure aluminum, copper, titanium, silver, gold, nickel-vanadium alloy, tungsten, or titanium-tungsten alloy.

In the thin film deposition process, after the process gas is delivered to the receiving space S of the chamber 11 (not shown), a high voltage is applied to the target T and the substrate W, so that the receiving space S between the target T and the substrate W forms a high voltage electric field gas, wherein the process gas is, for example, but not limited to, an inert gas. The high voltage electric field causes the process gas in the space S between the target T and the substrate W to dissociate and generate plasma. The positive ions in the plasma are attracted and accelerated by the negative voltage of the target T and strike the surface of the target T, so that the target atoms acquiring kinetic energy leave the surface of the target T and are deposited on the surface of the substrate W. Physical vapor deposition is only an embodiment of the present invention, but not a limitation of the scope of the present invention, thin film deposition apparatus can also be applied to chemical vapor deposition.

In one embodiment, the thin film deposition apparatus 1 may be provided with a cooling gas input line (not shown) through which the cooling gas is delivered between the stage 13 and the substrate W so that the cooling gas contacts the substrate W on the stage 13 to lower the temperature of the substrate W, and the stoppers 15 may block the substrate W on the stage 13 to prevent the substrate W from being blown off or displaced by the cooling gas.

The shielding member 17 of the film deposition apparatus 1 is higher than and shields the blocking member 15, instead of the blocking member 15 receiving part of the target atoms not deposited on the substrate W, so that the film formed by the target atoms deposited on the blocking member 15 can be reduced, and a small amount of or nonexistent film on the blocking member 15 is not enough to flow from the blocking member 15 to the contact position of the blocking member 15 and the substrate W after being heated, thereby improving the problem of sticking between the blocking member 15 and the substrate W. The material of the shield 17 is, for example, but not limited to, stainless steel, titanium, or aluminum alloy.

Specifically, the shielding member 17 has a connecting portion 171 and a shielding portion 173, wherein the shielding portion 171 is connected to the cavity 11 through the connecting portion 171. The connection part 171 and the shielding part 173 may be two members to constitute the shield 17 as shown in fig. 1, or the connection part 271 and the shielding part 273 of the thin film deposition apparatus 2 may be integrally formed to constitute the shield 27 as shown in fig. 2. Specifically, the shielding portion 173 is a hollow disk, and the shielding portion 173 is concentric with the cover ring 153 of the stopper 15. The

shutters

17 and 27 are not limited to being aligned with the stoppers 15, and the

shutters

17 and 27 may be protruded, aligned with or retracted into the stoppers 15. Specifically, the diameter of the hollow area of the shielding portion 173 forming the hollow disk is defined as a first inner diameter d1, and the diameter of the outer edge of the shielding portion 173 is defined as a first outer diameter d2, and further, the diameter of the hollow area of the cover ring 153 forming the hollow disk is defined as a second inner diameter d3, and the diameter of the outer edge of the cover ring 153 is defined as a second outer diameter d 4. In one embodiment, the first inner diameter d1 of the shield 173 is equal to or less than the second inner diameter d3 of the cover ring 153, and the first outer diameter d2 of the shield 173 is greater than the second outer diameter d4 of the cover ring 153, such that the shield 173 can completely shield the cover ring 153.

Referring to fig. 3, fig. 3 is a schematic view of a thin film deposition apparatus according to still another embodiment of the present invention. The thin film deposition apparatus 3 is substantially the same as the foregoing embodiment. In one embodiment, the shielding portion 373 of the shielding member 37 of the thin film deposition apparatus 3 further includes a first protrusion 372 to form a groove G3 between the first protrusion 372 and the connecting portion 371, wherein the groove G3 is used for containing part of the target atoms and preventing the target atoms deposited on the shielding member 37 from being melted by heat and dropping onto the substrate W. In one embodiment, the depth d5 of the groove G3 (the vertical distance from the first protrusion 372 to the shielding portion 373) is 1-20 mm, which is favorable for receiving a portion of the target atoms. The first protrusion 372 may be located at one end of the shielding portion 373, but the present invention is not limited thereto, and the first protrusion 372 may be located at any position of the shielding portion 373.

Also, the connection portion 371 and the shielding portion 373 may be two members to constitute the shielding member 37, or, as shown in fig. 4, the connection portion 471 and the shielding portion 473 of the thin film deposition apparatus 4 may be integrally formed to constitute the shielding member 47, and the groove G4 is formed between the first projection 472 and the connection portion 471 to receive part of the target atoms and prevent the target atoms deposited on the shielding member 47 from being melted by heat and dropping onto the substrate W.

Referring to fig. 5, fig. 5 is a schematic view of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 5 is substantially the same as the foregoing embodiment. In one embodiment, the shielding portion 573 of the shield 57 of the thin film deposition apparatus 5 further includes a first protrusion 572 and a second protrusion 574, so as to form a groove G5 between the first protrusion 572 and the second protrusion 574 at the shielding portion 573, wherein the groove G5 is configured to contain a portion of the target atoms and prevent the target atoms deposited on the shield 57 from being melted by heat and dropping onto the substrate W. The first protrusion 572 may be located at one end of the shielding portion 573, and the second protrusion 574 may be located at the other end of the shielding portion 573, but the present invention is not limited thereto, and the first protrusion 572 and the second protrusion 574 may be located at any position of the shielding portion 573.

Referring to fig. 6, fig. 6 is a schematic view of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 6 is substantially the same as the foregoing embodiment. In one embodiment, the connection portion 671 of the thin film deposition apparatus 6 further includes a seat portion 671a and a fixing portion 671b, wherein the seat portion 671a is connected to the chamber 11, and the fixing portion 671b is connected to the shielding portion 673. The connection portion 671 further includes a groove G6 located between the seat portion 671a and the fixing portion 671b, wherein the groove G6 is used for containing a portion of the target atoms and preventing the target atoms deposited on the shield from being melted by heat and dropping onto the substrate W.

Also, the connection portion 671 and the shielding portion 673 may be two members to constitute a shield, or, as shown in fig. 7, the connection portion 771 and the shielding portion 773 of the thin film deposition apparatus 7 may be integrally formed to constitute the shield 77, and the groove G7 is formed between the shielding portion 773 and the connection portion 771 to receive part of the target atoms and prevent the target atoms deposited on the shield 77 from being melted by heat and dropping onto the substrate W.

Referring to fig. 8, fig. 8 is a schematic view of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 8 is substantially the same as the foregoing embodiment. In one embodiment, the connecting portion 871 of the shield of the thin film deposition apparatus 8 further includes a seat portion 871a and a fixing portion 871b, wherein the seat portion 871a connects with the cavity 11, and the fixing portion 871b connects with the shield portion 873, wherein the shield portion 873 further includes a first protrusion portion 872 so as to form a groove G8 between the first protrusion portion 872 and the seat portion 871 a. Specifically, the groove G8 is formed by the shield 873 and the connecting portion 871 of the shield together to contain part of the target atoms and prevent the target atoms deposited on the shield from being melted by heat and dropping onto the substrate W. The first protrusion 872 may be located at one end of the shielding portion 873, but the present invention is not limited thereto, and the first protrusion 872 may be located at any position of the shielding portion 873.

Similarly, the connecting portion 871 and the shielding portion 873 can be two members to form a shielding member, or, as shown in fig. 9, the connecting portion 971 and the shielding portion 973 of the thin film deposition apparatus 9 can be integrally formed to form the shielding member 97, and a groove G9 is formed between the first protrusion 972 and the connecting portion 971 of the shielding member 973 to receive part of the target atoms and prevent the target atoms deposited on the shielding member 97 from being melted by heat and dropping onto the substrate W.

Referring to fig. 10, fig. 10 is a schematic view of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 10 is substantially the same as the foregoing embodiment. In one embodiment, the connection portion 1071 of the shield 107 of the thin film deposition apparatus 10 further includes a seat portion 1071a, a fixing portion 1071b, and a groove G10 ', wherein the seat portion 1071a connects the chamber 11, the fixing portion 1071b connects the shield portion 1073, and the groove G10' is located between the seat portion 671a and the fixing portion 671 b. Further, the shielding portion 1073 further includes a first protrusion 1072 and a second protrusion 1074 to form the groove G10 between the first protrusion 1072 and the second protrusion 1074 in the shielding portion 1073. The grooves G10' and the grooves G10 are used to contain a portion of the target atoms and prevent the target atoms deposited on the shield 107 from melting and dropping onto the substrate W. The first protrusion 1072 may be located at one end of the shielding portion 1073, and the second protrusion 1074 may be located at the other end of the shielding portion 1073, but the present invention is not limited thereto, and the first protrusion 1072 and the second protrusion 1074 may be located at any position of the shielding portion 573.

Referring to fig. 11, fig. 11 is a schematic view of a thin film deposition apparatus according to another embodiment of the present invention. The thin film deposition apparatus 11 is substantially the same as the foregoing embodiment. In one embodiment, the shield 117 of the thin film deposition apparatus 11 includes a first end 1174, a second end 1172, and a carrying region 1173, wherein the first end 1174 connects the connection portion 1171, and the second end 1172 and the first end 1174 are opposite to each other, wherein the carrying region 1173 is located between the first end 1174 and the second end 1172. The top of the second end 1172 is higher than the bearing area 1173 to form a groove G11 between the second end 1172 and the connecting portion 1171. The grooves G11 are used to contain some target atoms and prevent the target atoms deposited on the shield 117 from melting and dropping onto the substrate W.

In the above embodiments, the thin film deposition apparatuses 1 to 11 may further include a cooling circulation passage 12, wherein the cooling circulation passage 12 contacts the connection portion of the shield. The cooling circulation channel 12 is used for conveying a cooling fluid to lower the temperature of the mask, thereby accelerating the cooling of the target atoms deposited on the mask and forming a film on the mask to prevent the target atoms from melting due to heat accumulation, thereby preventing the target atoms from dropping on the substrate W.

In summary, compared with the prior art, the technical effects of the thin film deposition apparatus according to the embodiments of the present invention are described as follows.

In the prior art, a stopper for fixing a substrate is deposited by target atoms to form a film, and when the temperature is accumulated more in the process, the film on the stopper will melt and flow to the substrate or the contact part of the stopper and the substrate, so that the substrate is contaminated or the substrate and the stopper are adhered to each other, thereby reducing the yield and reliability of products. In contrast, the thin film deposition apparatus of the present invention shields the stopper through the shielding member to prevent the stopper from being deposited by too many target atoms, so that when the thin film of the stopper is reduced, the contamination of the substrate by the heated and flowing thin film can be reduced, thereby improving the quality of the product.

The foregoing is merely a preferred embodiment of the invention, and is not intended to limit the scope of the invention, which is defined by the appended claims, in which all equivalent changes and modifications in the shapes, constructions, features, and spirit of the invention are intended to be included.

Claims

1. A thin film deposition apparatus, characterized by comprising:

a cavity with a containing space;

a carrying platform which is positioned in the accommodating space and is used for carrying at least one substrate;

at least one stopper positioned in the accommodating space of the cavity, wherein the stopper is provided with a main body and a cover ring, the cover ring is a hollow disk body, and the stopper is used for preventing the back plating of the substrate on the carrying platform; and

the shielding part is higher than the blocking part and is provided with a connecting part and a shielding part, the shielding part is connected with the cavity through the connecting part, the shielding part is a hollow disc body, and the shielding part and the cover ring are concentric;

wherein a first inner diameter of the shield is equal to or less than a second inner diameter of the cover ring and a first outer diameter of the shield is greater than a second outer diameter of the cover ring.

2. The thin film deposition apparatus according to claim 1, wherein the shielding part further comprises a first protrusion to form a groove between the first protrusion and the connection part, wherein the groove has a depth of 1 to 20 mm.

3. The thin film deposition apparatus according to claim 2, wherein the shielding portion further comprises a second convex portion to form a groove between the first convex portion and the second convex portion at the shielding portion.

4. The thin film deposition apparatus according to claim 1, wherein the connecting portion further includes a seat portion connecting the chamber and a fixing portion connecting the shielding portion, wherein the connecting portion further includes a groove between the seat portion and the fixing portion.

5. The thin film deposition apparatus according to claim 4, wherein the shielding portion further includes a first convex portion to form a recess between the first convex portion and the seat portion.

6. The thin film deposition apparatus according to claim 5, wherein the shield further comprises a second convex portion to form a groove between the first convex portion and the second convex portion at the shield portion.

7. The thin film deposition apparatus of claim 1, wherein the shield further comprises a first end, a second end and a carrying region, the first end is connected to the connecting portion, the second end and the first end are opposite to each other, and the carrying region is located between the first end and the second end, wherein a top of the second end is higher than the carrying region to form a groove located between the second end and the connecting portion.

8. The thin film deposition apparatus as claimed in claim 1, wherein the material of the shield is stainless steel, titanium or an aluminum alloy.

9. The thin film deposition apparatus of claim 1, further comprising at least one cooling circulation channel contacting the shield, the cooling circulation channel being configured to convey a cooling fluid to lower a temperature of the shield.

10. The thin film deposition apparatus of claim 1, further comprising a target shield positioned above the shield.