CN100383897C - Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method - Google Patents
Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method Download PDFInfo
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- CN100383897C CN100383897C CNB2004100736543A CN200410073654A CN100383897C CN 100383897 C CN100383897 C CN 100383897C CN B2004100736543 A CNB2004100736543 A CN B2004100736543A CN 200410073654 A CN200410073654 A CN 200410073654A CN 100383897 C CN100383897 C CN 100383897C
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- ferromagnetic
- antiferromagnetic
- layer
- multilayer film
- pinning system
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Abstract
The present invention discloses a ferromagnetic /antiferromagnetic multilayer film pinning system and a preparation method thereof. The pinning system comprises a substrate, a buffer layer arranged on the substrate, a pinned ferromagnetic layer, an antiferromagnetic layer as a pinning material and a protective layer arranged on the antiferromagnetic layer. The preparation method comprises the steps that all the layers are orderly deposited on the substrate; the pinning system is obtained through vacuum annealing. The pinning system prepared by the method of the present invention uses CrPt as the antiferromagnetic pinning material which has high pinning effect on the ferromagnetic layer, the thermal stability and the corrosion resistance of the system are greatly enhanced, and atomic dispersion between the antiferromagnetic layer and the ferromagnetic layer is greatly reduced. The system has the advantages of simple preparation technique and stable material performance.
Description
Technical field
The present invention relates to a kind of key element in a kind of magnetoelectronic devices: a kind of ferromagnetic/antiferromagnetic multilayer film pinning system, this system can directly apply in Spin Valve, MTJ even the magnetic RAM (MRAM).
The invention still further relates to a kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning system.
Background technology
One of ferromagnetic/element that antiferromagnetic multilayer film system is Spin Valve and MTJ, its major function is by the pinning effect of inverse ferric magnetosphere to ferromagnetic layer, make reference layer (the document Phys.Rev.B 43 of this ferromagnetic layer as magnetic, 1297 (1991) and IEEE CircuitsDevices Mag.18,17 (2002)).From angle of practical application, this system to antiferromagnetic requirement is: can produce bigger stiffness of coupling, than higher Blocking temperature, thickness is thinner, and corrosion resistance is good, and resistivity is than higher.Antiferromagnetic material commonly used comprises Fe
2O
3, NiO and Co
xNi
1-xOxide such as O and Mn system antiferromagnetic, as FeMn, IrMn, (document J.Magn.Magn.Mater.192,203 (1999)) such as NiMn and PtMn.Though there is very high resistivity in the exchange biased system based on the oxide antiferromagnet; But its pinning field is too little; FeMn and IrMn have bigger pinning field, but are easy to be corroded; The NiMn of the orderly antiferromagnetic phase of chemistry and pinning field and the resistance to corrosion of PtMn are all suitable substantially, but relative pinning field, coercive force is often bigger.And, be antiferromagnetic to all Mn, the diffusion of Mn atom is difficult to stop, it will seriously destroy the overall performance (document J.Appl.Phys.87,2469 (2000) and J.Appl.Phys.89,6907 (2000)) of Spin Valve, especially MTJ.Cr in addition
0.7Al
0.3(document Appl.Phys.Lett.70,2915 (1997)) also are used as pinning material, but its pinning field is too little, is not suitable for being used in Spin Valve and MTJ.
Summary of the invention
Problem at above-mentioned existence, the object of the present invention is to provide a kind of ferromagnetic/antiferromagnetic multilayer film pinning system, this system is introduced the CrPt of the orderly antiferromagnetic phase of chemistry as pinning material, with respect to ferromagnetic/antiferromagnetic system made from existing antiferromagnet (such as FeMn, IrMn, NiMn and PtMn etc.), ferromagnetic/antiferromagnetic pinning system made from this antiferromagnet has extraordinary thermal stability, the exchange bias field of superior corrosion resistance, high resistivity, moderate strength and fewer atom diffusion.
Another object of the present invention is to provide a kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning system.
For achieving the above object, the present invention a kind of ferromagnetic/antiferromagnetic multilayer film pinning system comprises and setting gradually on a substrate and the substrate:
One resilient coating is used to induce the ferromagnetic layer and the orderly antiferromagnetic Cr of chemistry of (111) texture
0.5Pt
0.5Layer;
One ferromagnetic layer is located on the resilient coating;
The orderly antiferromagnetic Cr of one chemistry
0.5Pt
0.5Layer is located on the ferromagnetic layer, and
One is used to prevent ferromagnetic and the oxidized protective layer of inverse ferric magnetosphere.
Further, the material of described substrate is selected from a kind of in silicon or the glass.
Further, described resilient coating or protective layer are selected from a kind of among Ta, Cu or the NiFeCr.
Further, described ferromagnetic layer is selected from a kind of among Ni, Co, CoFe, NiFe or the NiCo.
Provided by the invention a kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning system comprises following steps:
(1) adopts vacuum deposition method, on substrate, plate resilient coating, ferromagnetic layer, the orderly antiferromagnetic Cr of chemistry successively
0.5Pt
0.5Layer and protective layer;
(2) ferromagnetic/antiferromagnetic multilayer film pinning system that above-mentioned steps obtained is parallel under the externally-applied magnetic field of sample easy axis direction one carries out vacuum annealing.
Further, during the vacuum deposition method plated film that adopted in the described step (1), base vacuum air pressure is better than 10
-5Pa, and the deposition operating air pressure under the inert atmosphere is 0.2～0.8Pa.
Further, the annealing temperature of the annealing process in the described step (2) is that 300～500 ℃, annealing time are that 1～20 hour, base vacuum are better than 10
-3Pa.
The present invention has following advantage compared to existing technology:
1, provided by the invention ferromagnetic/antiferromagnetic multilayer film pinning system, by introducing the extremely high (T of Neel temperature
N＞1300 ℃) antiferromagnet Cr
0.5Pt
0.5As pinning layer, make the thermal stability of system; In addition, because the chemical stability of Pt and Cr is all extremely strong, so Cr
0.5Pt
0.5Corrosion resistance is very good;
2, provided by the invention ferromagnetic/antiferromagnetic multilayer film pinning system owing to wherein be not contained in the heat treatment process the very easily Mn element of diffusion mobility,, thereby can carry out the heat treatment of higher temperature to system so the atom diffusion between ferromagnetic layer and inverse ferric magnetosphere is seldom;
3, provided by the invention ferromagnetic/antiferromagnetic multilayer film pinning system preparation method, the relative percentage composition by Cr atom and Pt atom in the control inverse ferric magnetosphere and deposit antiferromagnetic Cr
0.5Pt
0.5The thickness of layer, thus can obtain to realize the pinning bigger that its annealing conditions, corrosion resistance, thermal stability and resistivity are all more satisfactory simultaneously to ferromagnetic layer with relatively thinner antiferromagnetic thickness.
Description of drawings
Fig. 1 be of the present invention ferromagnetic/structure of antiferromagnetic multilayer film pinning material;
Fig. 2 is the structures of samples of the embodiment of the invention 1;
Fig. 3 is the embodiment of the invention 1 a sample product preparations attitude and through 350 ℃, the magnetic hysteresis loop of measuring with vibrating specimen magnetometer after the vacuum annealing in 5 hours;
Fig. 4 is the pinning field H of the embodiment of the invention 1 annealing specimen
pAnd coercive force H
cDependence to temperature.
Drawing explanation: 1-substrate among Fig. 1,2-resilient coating, 3-ferromagnetic layer, the antiferromagnetic Cr of 4-
0.5Pt
0.5Layer and 5-protective layer; 1-substrate among Fig. 2,2-resilient coating, 3-ferromagnetic layer, 4-[Pt/Cr] multilayer film, the 5-protective layer.
Embodiment:
Fig. 1 for the present invention ferromagnetic/structure of antiferromagnetic multilayer film pinning material.The structure of this material is substrate 1, resilient coating 2, ferromagnetic layer 3, antiferromagnetic Cr
0.5Pt
0.5Layer 4 and protective layer 5.
Embodiment 1:
As shown in Figure 2, the structure of ferromagnetic/antiferromagnetic multilayer film pinning material is: glass substrate 1, and resilient coating Ta2, its thickness are 5nm; Ferromagnetic layer Co
0.9Fe
0.13, its thickness is 12nm; Inverse ferric magnetosphere multilayer film [Pt/Cr] 4, wherein Pt thickness is 1nm, and Cr thickness is 0.8nm, and gross thickness is about 30nm; And protective layer Ta5, its thickness is 5nm.When above-mentioned each layer thickness or composition are the vacuum moulding machine sample or annealing before value.Fig. 3 is the sample preparation attitude of the embodiment of the invention 1 and through 350 ℃, the magnetic hysteresis loop of measuring with vibrating specimen magnetometer after the vacuum annealing in 5 hours, its coercive force is about 20 oersteds during the preparation attitude, there is not the pinning field, and it has produced the pinning field of 72 oersteds after the annealing, coercive force only has the increase of a little, and value is 28 oersteds, and magnetic moment does not have obvious variation (variable quantity≤6%) before and after the annealing in addition.Fig. 4 is the pinning field H of this annealing specimen
pAnd coercive force H
cTo the dependence of temperature, when temperature was lower than 250 ℃, the pinning field changed very little.System is about 600 ℃ by temperature, than other pinning system (J.Magn.Magn.Mater.192,203 (1999); Handbook of magnetic materials, (North-Holland, Amsterdam, 1999), Vol.15, pp.157-166.) high more than 150 ℃ by temperature, thermal stability is very good.
Embodiment 2:
The structure of ferromagnetic/antiferromagnetic multilayer film pinning system is successively: substrate Si1, resilient coating (Ni
0.8Fe
0.2)
X Cr
1-X2,0.5＜X＜0.7 wherein, its thickness is 5nm; Ferromagnetic layer Co
0.9Fe
0.13, its thickness is 10nm; Inverse ferric magnetosphere multilayer film [Pt/Cr] 4 wherein, Pt thickness is 1nm, Cr thickness is 0.8nm, gross thickness is about 30nm; And protective layer Ta5, its thickness is 5nm.When above-mentioned each layer thickness or composition are the vacuum moulding machine sample or annealing before value.
Embodiment 3:
The structure of ferromagnetic/antiferromagnetic multilayer film pinning system is successively: substrate Si1, and resilient coating Ta2, its thickness are 5nm; Ferromagnetic layer Co3, its thickness are 10nm; Inverse ferric magnetosphere Cr
0.5Pt
0.54, its thickness is 20nm, and protective layer Ta5, and its thickness is 5nm.When above-mentioned each layer thickness or composition are the vacuum moulding machine sample or annealing before value.
Be example with embodiment 1 below, illustrate of the present invention ferromagnetic/Cr
0.5Pt
0.5The preparation method of antiferromagnetic multilayer film pinning system.Preparation Co-Fe is ferromagnetic/and the step of the antiferromagnetic multilayer film pinning system of Pt-Cr is as follows: and at first adopt vacuum deposition method, as magnetically controlled sputter method, the base vacuum degree is better than 10
-5Pa, and the deposition operating air pressure under the inert atmosphere is 0.5Pa, plates resilient coating Ta2 (thickness is 4nm) successively on Si substrate 1, ferromagnetic layer Co
0.9Fe
0.13 (thickness is 12nm), the multilayer film in 17 cycles [Pt (thickness is 1nm)/Cr (thickness is 0.8nm)], and protective layer Ta5 (thickness is 5nm); Then sample is placed direction to be parallel under the externally-applied magnetic field of the easy axle of sample, magnetic field intensity is about 10
2～10
3Oersted, and the base vacuum degree is better than 10
-4Pa is 350 ℃ through excess temperature, annealing in 5 hours.Because the Pt layer and the Cr layer of multilayer film are all thinner in the system, Pt layer and Cr layer spread mutually in annealing process, thereby [Pt/Cr] multilayer film when preparing attitude is transformed into for the orderly antiferromagnetic phase alloy Cr of chemistry
0.5Pt
0.5Through vibrating specimen magnetometer to the measurement (as shown in Figure 3) of its magnetic hysteresis loop with to its pinning field H
pAnd coercive force H
cTo the temperature dependency measurement of (as shown in Figure 4), prove that this material has bigger anisotropy and extraordinary thermal stability.
Claims (7)
1. ferromagnetic/antiferromagnetic multilayer film pinning system is characterized in that, comprises setting gradually on a substrate and the substrate:
One resilient coating is used to induce the ferromagnetic layer and the orderly antiferromagnetic Cr of chemistry of (111) texture
0.5Pt
0.5Layer;
One ferromagnetic layer is located on the resilient coating;
The orderly antiferromagnetic Cr of one chemistry
0.5Pt
0.5Layer is located on the ferromagnetic layer, and
One is used to prevent ferromagnetic and the oxidized protective layer of inverse ferric magnetosphere.
2. according to claim 1 a kind of ferromagnetic/antiferromagnetic multilayer film pinning system, it is characterized in that the material of described substrate is selected from a kind of in silicon or the glass.
3. according to claim 1 a kind of ferromagnetic/antiferromagnetic multilayer film pinning system, it is characterized in that described resilient coating or protective layer are selected from a kind of of Ta, Cu or NiFeCr.
4. according to claim 1 a kind of ferromagnetic/antiferromagnetic multilayer film pinning system, it is characterized in that described ferromagnetic layer is selected from a kind of among Ni, Co, CoFe, NiFe or the NiCo.
One kind prepare claim 1 described ferromagnetic/method of antiferromagnetic multilayer film pinning system, it is characterized in that, comprise following steps:
(1) adopts vacuum deposition method, on substrate, plate resilient coating, ferromagnetic layer, the orderly antiferromagnetic Cr of chemistry successively
0.5Pt
0.5Layer and protective layer;
(2) ferromagnetic/antiferromagnetic multilayer film pinning system that above-mentioned steps obtained is parallel under the externally-applied magnetic field of sample easy axis direction one carries out vacuum annealing.
6. a kind of method for preparing ferromagnetic/antiferromagnetic multilayer film pinning system according to claim 5 is characterized in that, during the vacuum deposition method plated film that adopted in the described step (1), base vacuum air pressure is better than 10
-5Pa, and the deposition operating air pressure under the inert atmosphere is 0.2～0.8Pa.
7. a kind of method for preparing ferromagnetic/antiferromagnetic multilayer film pinning system according to claim 5 is characterized in that, the annealing temperature of the annealing process in the described step (2) is that 300～500 ℃, annealing time are that 1～20 hour, base vacuum are better than 10
-3Pa.
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| CN101000822B (en) * | 2006-01-11 | 2010-11-03 | 中国科学院物理研究所 | Close-shaped magnetic multi-layer film with metal core and manufacturing method and use thereof |
| CN1992105B (en) * | 2005-12-31 | 2011-05-04 | 中国科学院物理研究所 | Ring-shaped magnetic multi-layer film having metallic core and method for making same and use |
| CN1992104B (en) * | 2005-12-31 | 2011-05-04 | 中国科学院物理研究所 | Ring-shaped magnetic multi-layer film and method for making same and use |
| CN101000821B (en) * | 2006-01-11 | 2010-05-12 | 中国科学院物理研究所 | Close-shaped magnetic multi-layer film and preparation method and use thereof |
| CN100452255C (en) * | 2006-03-07 | 2009-01-14 | 中国科学院物理研究所 | Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method |
| CN101834053B (en) * | 2010-05-19 | 2012-07-04 | 西南科技大学 | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof |
| EP3499595B1 (en) * | 2016-08-10 | 2020-12-09 | Alps Alpine Co., Ltd. | Exchange-coupling film, and magneto-resistive element and magnetic detection device using same |
| CN108010718B (en) * | 2016-10-31 | 2020-10-13 | 北京北方华创微电子装备有限公司 | Magnetic thin film deposition chamber and thin film deposition equipment |
| CN108269915B (en) * | 2017-01-02 | 2023-09-22 | Imec 非营利协会 | Method for forming magnetic resistance device and magnetic resistance device |
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|---|---|---|---|---|
| CN2591723Y (en) * | 2002-12-24 | 2003-12-10 | 中国科学院物理研究所 | Nail punching thin film with laminated ferro magnetic layer |
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