CN101834053B - Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof - Google Patents
Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof Download PDFInfo
- Publication number
- CN101834053B CN101834053B CN2010101772858A CN201010177285A CN101834053B CN 101834053 B CN101834053 B CN 101834053B CN 2010101772858 A CN2010101772858 A CN 2010101772858A CN 201010177285 A CN201010177285 A CN 201010177285A CN 101834053 B CN101834053 B CN 101834053B
- Authority
- CN
- China
- Prior art keywords
- ferromagnetic
- multilayer film
- ferromagnetic layer
- inverse ferric
- ferric magnetosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The invention discloses a ferromagnetic/anti-ferromagnetic multilayer film pinning material and a preparation method thereof. The multilayer film pinning material comprises a substrate and a buffer layer, a ferromagnetic layer I, an anti-ferromagnetic layer and a ferromagnetic layer II arranged on the substrate, and a protective layer arranged on the ferromagnetic layer II. The preparation method comprises that the layers are deposited on the substrate in turn by adopting magnetron sputtering to obtain the multilayer film material. The multilayer film pinning material prepared by the method of the invention not only successfully realizes ferromagnetic/anti-ferromagnetic exchange bias, but also enhances the pinning performance of an anti-ferromagnetic material by using exchange coupling effect so that a ferromagnetic/anti-ferromagnetic exchange bias system is more stable and is more suitable for the application of a magneto-electronic device; and the preparation process is simple and the performance of the material is stable.
Description
Technical field
The invention belongs to multi-layered magnetic film and preparation method thereof of spin exchange coupling, relate to a kind of ferromagnetic/antiferromagnetic multilayer film pinning material and preparation method thereof.This pinning material is suitable for the element do in the magnetoelectronic devices, can directly applies to Spin Valve and MTJ.
Background technology
Antiferromagnet is in the components and parts of magneto-electronics or spintronics; Mainly be used as pinning layer; Its most basic requirement is that big exchange anisotropy and high thermal stability are arranged; So that this system has high Blocking temperature and big pinning field, but antiferromagnetic pinning material of the prior art often can not satisfy this two primary conditions simultaneously better.
As the antiferromagnetic thermal stability that can strengthen ferromagnetic particle to ferromagnetic exchange biased effect, antiferromagnetic and ferromagnetic exchange-coupling interaction also can strengthen the thermal stability of antiferromagnetic particle.R.Mattheis and K.Steenbeck once were coupled the IrMn in CoFe/Ru/CoFe artificial antiferromagnetic and the exchange biased system of NiFe/IrMn; Utilize the uniaxial anisotropy of CoFe/Ru/CoFe to improve the thermal stability of IrMn, exchange biased Blocking temperature had been increased to 360K from 110K when they found that IrMn is 1.2nm.But the enhancing of IrMn thermal stability and the relation of artificial antiferromagnetic coupling intensity and artificial antiferromagnetic middle ferromagnetic layer are not explained in this work.In addition; When the present inventor finds that in research work suitable Mn is incorporated into the interface of CrPt pinning system; Can make thermal stability obtain large increase; We think that this is owing to formed antiferromagnetic (the Cr1-δ Mn δ) Pt with the CrPt structural similarity at the interface, these two kinds similar antiferromagnetic generation exchange couplings, thereby in whole exchange biased system; In conjunction with very strong exchange anisotropy and the extraordinary thermal stability of CrPt of (Cr1-δ Mn δ) Pt, realized the ideal pinning effect: Blocking temperature T b～600 ℃ and exchange anisotropy ability Jex～0.48erg/cm
2Similarly, two or more antiferromagnetic pinning materials commonly used, through suitable collocation, being coupled together with different ferromagnetic materials also possibly have more superior performance as a kind of pinning system.
Summary of the invention
The object of the invention is intended to overcome deficiency of the prior art, provide a kind of ferromagnetic/antiferromagnetic multilayer film pinning material and preparation method thereof.Thereby realize that ferromagnetic and antiferromagnet (such as FeMn, NiO, IrMn, NiMn, PtMn or PdMn etc.) make its thermal stability and corresponding pinning performance more superior through the interface coupling.
Content of the present invention is: a kind of ferromagnetic/antiferromagnetic multilayer film pinning material, it is characterized in that comprising:
One substrate (substrate material be selected from silicon or the glass a kind of) and on substrate, setting gradually
One resilient coating is used to induce the inverse ferric magnetosphere of texture;
One ferromagnetic layer (I) is arranged on the resilient coating;
One inverse ferric magnetosphere is arranged on the ferromagnetic layer (I);
One ferromagnetic layer (II) is arranged on the inverse ferric magnetosphere; And
One be arranged on the ferromagnetic layer (II) protective layer (being used to prevent that magnetic material is oxidized).
In the content of the present invention: said inverse ferric magnetosphere is that manganese is a kind of among antiferromagnet FeMn, NiMn, PtMn, PdMn or the IrMn etc.
In the content of the present invention: said ferromagnetic layer (I) is a kind of among hard magnetic material SmCo, the FePt etc.; Described ferromagnetic layer (II) is a kind of among soft magnetic material NiFe, Co or the CoFe etc.
In the content of the present invention: described ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, it is characterized in that may further comprise the steps:
A, employing vacuum deposition method plate resilient coating, ferromagnetic layer (I), inverse ferric magnetosphere, ferromagnetic layer (II) and protective layer successively on substrate, promptly make the semi-finished product of pinning material;
B, with the semi-finished product of this pinning material, be parallel under the externally-applied magnetic field of general magnetic field intensity of sample easy axis direction one and carry out vacuum annealing, promptly obtain finished product after the annealing.
Said ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material in:
When the vacuum deposition method of said step a plated (film) layer, base vacuum air pressure was superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.1～0.8Pa;
The annealing temperature of the annealing process among the said step b is that 350～650 ℃, annealing time are that 0.5～5.0 hour, base vacuum are superior to 10
-3Pa.
Another content of the present invention is: a kind of ferromagnetic/antiferromagnetic multilayer film pinning material, it is characterized in that comprising:
Substrate (substrate material be selected from silicon or the glass a kind of) and on substrate, setting gradually
Resilient coating is used to induce the inverse ferric magnetosphere of texture;
First ferromagnetic layer is arranged on the resilient coating;
First inverse ferric magnetosphere is arranged on first ferromagnetic layer;
Second ferromagnetic layer is arranged on first inverse ferric magnetosphere;
Second inverse ferric magnetosphere is arranged on second ferromagnetic layer; And
Be arranged at the protective layer (being used to prevent that second inverse ferric magnetosphere is oxidized) on second inverse ferric magnetosphere.
In another content of the present invention: said first inverse ferric magnetosphere is that NiO or manganese are a kind of among antiferromagnet FeMn or the IrMn etc.; Said second inverse ferric magnetosphere is that manganese is a kind of among antiferromagnet FeMn, NiMn, PtMn, PdMn or the IrMn etc., or a kind of among artificial antiferromagnet Co/Ru
/Co, CoFe/Ru
/CoFe, NiFe/Ru
/NiFe or the Co/Cu/Co etc.
In another content of the present invention: described first ferromagnetic layer and second ferromagnetic layer are a kind of among soft magnetic material NiFe, Co or the CoFe etc.
In another content of the present invention: described ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, it is characterized in that may further comprise the steps:
A, employing vacuum deposition method, [under the externally-applied magnetic field of a general magnetic field intensity (102Oe)] plates resilient coating, first ferromagnetic layer, first inverse ferric magnetosphere, second ferromagnetic layer, second inverse ferric magnetosphere and protective layer successively on substrate.
Another content of the present invention described ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material in, when adopting described vacuum deposition method plating (film) layer, the base vacuum atmospheric pressure is superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.1～0.8Pa.
Compared with prior art, the present invention has following characteristics and beneficial effect:
(1) the present invention ferromagnetic/antiferromagnetic multilayer film pinning material, through selecting hard magnetic material for example SmCo, FePt etc. for use, be coupled, thereby improve the thermal stability of exchange biased system with antiferromagnetic pinning material, finally make the pinning performance of system also obtain to improve; Realized that promptly ferromagnetic and antiferromagnet (such as FeMn, NiO, IrMn, NiMn, PtMn or PdMn etc.) make its thermal stability and corresponding pinning performance more superior through the interface coupling;
(2) adopt the ferromagnetic/antiferromagnetic exchange that not only successfully realized of the ferromagnetic/antiferromagnetic multilayer film pinning material (or claiming magnetoresistance effect material, magnetoresistance effect system) of the inventive method preparation to setover; And utilize exchange-coupling interaction; Strengthened the pinning performance of antiferromagnet; Make that ferromagnetic/antiferromagnetic exchange biasing system is more stable, be more suitable for application in magnetoelectronic devices;
(3) the present invention is through several kinds of ferromagnetic/antiferromagnetic exchange biasing systems commonly used, through being coupled together as a kind of pinning system with suitable ferromagnetic or ferromagnetic material, improved antiferromagnetic thermal stability, and the pinning performance of simultaneity factor also obtains raising; This system can directly apply to Spin Valve and MTJ;
(4) thus preparation method of the present invention ties up on the substrate and to adopt magnetron sputtering to deposit each layer successively to obtain multi-layer film material, preparation technology is simple, material property is stable, and is practical.
Description of drawings
Fig. 1 is the structural representation of the embodiment of the invention 1,2;
Fig. 2 is the structural representation of the embodiment of the invention 3,4;
Fig. 3 is that the vibrating specimen magnetometer (VSM) of the embodiment of the invention 3 ferromagnetic/antiferromagnetic multilayer film pinning materials is measured curve.
Among Fig. 1: 1-substrate, 2-resilient coating, 3-ferromagnetic layer I, 4-inverse ferric magnetosphere, 5-ferromagnetic layer II, 6-protective layer;
Among Fig. 2: 1-substrate, 2-resilient coating, 3-first ferromagnetic layer, 4-first inverse ferric magnetosphere, 5-second ferromagnetic layer, 6-second inverse ferric magnetosphere, 7-protective layer.
Embodiment
Embodiment given below intends so that the present invention is described further; But can not be interpreted as it is restriction to protection range of the present invention; The technical staff in this field to some nonessential improvement and adjustment that the present invention makes, still belongs to protection scope of the present invention according to the content of the invention described above.
Embodiment 1: referring to accompanying drawing 1.
A kind of ferromagnetic/antiferromagnetic multilayer film pinning material (magnetoresistance effect system), form by substrate 1, resilient coating 2, ferromagnetic layer I 3, inverse ferric magnetosphere 4, ferromagnetic layer II 5 and protective layer 6 in order;
Layers of material and parameter are: 1-substrate Si; 2-resilient coating Ta (thickness is 10nm), 3-ferromagnetic layer I SmCo (thickness is 50nm), 4-inverse ferric magnetosphere FeMn or IrMn (thickness is 10nm); 5-ferromagnetic layer II NiFe (thickness is 15nm), and 6-protective layer Ta (thickness is 5nm); When each layer thickness or composition are the vacuum moulding machine sample or annealing before value; Vacuum annealing temperature is 550 ℃, is incubated 0.5 hour, and vacuum degree is superior to 10
-4Pa.
Embodiment 2: referring to accompanying drawing 1.
A kind of ferromagnetic/antiferromagnetic multilayer film pinning material (magnetoresistance effect system), by substrate 1, on substrate 1, plate resilient coating 2, ferromagnetic layer I 3, inverse ferric magnetosphere 4, ferromagnetic layer II 5 and protective layer 6 successively and form;
Layers of material and parameter are: 1-substrate Si; 2-resilient coating Ta (thickness is 10nm), 3-ferromagnetic layer I FePt (thickness is 50nm), 4-inverse ferric magnetosphere FeMn or IrMn (thickness is 10nm); 5-ferromagnetic layer II NiFe (thickness is 15nm), and 6-protective layer Ta (thickness is 5nm); When above-mentioned each layer thickness or composition are the vacuum moulding machine sample or annealing before value; Vacuum annealing temperature is 600 ℃, is incubated 1 hour, and vacuum degree is superior to 10
-4Pa.
Embodiment 3: referring to accompanying drawing 2.
A kind of ferromagnetic/antiferromagnetic multilayer film pinning material (magnetoresistance effect system), by substrate 1, on substrate 1, plate resilient coating 2, first ferromagnetic layer 3, first inverse ferric magnetosphere 4, second ferromagnetic layer 5, second inverse ferric magnetosphere 6 and protective layer 7 successively and form.
Layers of material and parameter are: 1-substrate Si; 2-resilient coating Ta (thickness is 5nm); The 3-first ferromagnetic layer NiFe (thickness is 15nm); The 4-first inverse ferric magnetosphere FeMn (thickness is 2.5nm), the 5-second ferromagnetic layer NiFe (thickness is 10nm), 6-second inverse ferric magnetosphere FeMn (thickness is 10nm) and 7-protective layer Ta (thickness is 5nm); Value when above-mentioned each layer thickness or composition are the vacuum moulding machine sample; The magnetic hysteresis loop that accompanying drawing 3 is measured with vibrating specimen magnetometer for the finished product of present embodiment 3; The pinning field of its 2.5nmFeMn pinning 15nm NiFe is 4.8 * 10
3A/m, coercive force are 0.75 * 10
3A/m.
Embodiment 4: referring to accompanying drawing 2.
A kind of ferromagnetic/antiferromagnetic multilayer film pinning material (magnetoresistance effect system), by substrate 1, on substrate 1, plate resilient coating 2, first ferromagnetic layer 3, first inverse ferric magnetosphere 4, second ferromagnetic layer 5, second inverse ferric magnetosphere 6 and protective layer 7 successively and form.
Layers of material and parameter are: 1-substrate Si; 2-resilient coating Ta (thickness is 5nm); The 3-first ferromagnetic layer NiFe (thickness is 15nm); The 4-first inverse ferric magnetosphere NiO (thickness is 10nm), the 5-second ferromagnetic layer NiFe (thickness is 10nm), the 6-second inverse ferric magnetosphere FeMn (thickness is 15nm) and 7-protective layer Ta (thickness is 5nm).Value when above-mentioned each layer thickness or composition are the vacuum moulding machine sample.
Embodiment 5:
A kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material (magnetoresistance effect system); With embodiment 3 examples, the preparation Ni-Fe ferromagnetic/the antiferromagnetic multilayer film pinning of Fe-Mn system, its step is following: at first adopt vacuum deposition method; Like magnetically controlled sputter method, the base vacuum degree is superior to 10
-5Pa; And the deposition operating air pressure under the inert atmosphere is 0.3Pa; On the 1-Si substrate, plate 2-resilient coating Ta (thickness is 5nm), the 3-first ferromagnetic layer Ni80Fe20 (thickness is 15nm), the 4-first inverse ferric magnetosphere FeMn (thickness is 2.5nm), the 5-second ferromagnetic layer Ni80Fe20 (thickness is 10nm), the 6-second inverse ferric magnetosphere FeMn (thickness is 10nm) and 7-protective layer Ta (thickness is 5nm) successively
To the measurement of its magnetic hysteresis loop with to the measurement of its temperature thermal stability, prove that this material has very strong thermal stability, and anisotropy is superior through vibrating specimen magnetometer.
Embodiment 6-11: referring to accompanying drawing 1.
A kind of ferromagnetic/antiferromagnetic multilayer film pinning material (magnetoresistance effect system), by substrate 1, on substrate 1, plate resilient coating 2, ferromagnetic layer I 3, inverse ferric magnetosphere 4, ferromagnetic layer II 5 and protective layer 6 successively and form; Layers of material sees the following form:
| Embodiment |
6 | 7 | 8 | 9 | 10 | 11 |
| Substrate | Silicon | Silicon | Silicon | Glass | Glass | Glass |
| Resilient coating | Ta | Ta | Ta | Ta | Ta | Ta |
| Ferromagnetic layer I | SmCo | SmCo | FePt | SmCo | FePt | FePt |
| Inverse ferric magnetosphere | FeMn | NiMn | PtMn | PdMn | IrMn | IrMn |
| Ferromagnetic layer II | NiFe | Co | CoFe | NiFe | Co | CoFe |
| Protective layer | Ta | Ta | Ta | Ta | Ta | Ta |
Embodiment 12:
A kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, may further comprise the steps:
A, employing vacuum deposition method plate resilient coating, ferromagnetic layer I, inverse ferric magnetosphere, ferromagnetic layer II and protective layer successively on substrate, promptly make the semi-finished product of pinning material;
B, with the semi-finished product of this pinning material, be parallel under the externally-applied magnetic field of general magnetic field intensity of sample easy axis direction one and carry out vacuum annealing, promptly obtain finished product after the annealing;
During the vacuum deposition method coating of said step a, base vacuum air pressure is superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.1Pa;
The annealing temperature of the annealing process among the said step b is that 350 ℃, annealing time are that 0.5 hour, base vacuum are superior to 10
-3Pa.
Other is with arbitrary among embodiment 1,2 or the embodiment 6-11, slightly.
Embodiment 13:
A kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, may further comprise the steps:
A, employing vacuum deposition method plate resilient coating, ferromagnetic layer I, inverse ferric magnetosphere, ferromagnetic layer II and protective layer successively on substrate, promptly make the semi-finished product of pinning material;
B, with the semi-finished product of this pinning material, be parallel under the externally-applied magnetic field of general magnetic field intensity of sample easy axis direction one and carry out vacuum annealing, promptly obtain finished product after the annealing;
During the vacuum deposition method coating of said step a, base vacuum air pressure is superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.4Pa;
The annealing temperature of the annealing process among the said step b is that 350 ℃, annealing time are that 5.0 hours, base vacuum are superior to 10
-3Pa.
Other is with arbitrary among embodiment 1,2 or the embodiment 6-11, slightly.
Embodiment 14:
A kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, may further comprise the steps:
A, employing vacuum deposition method plate resilient coating, ferromagnetic layer I, inverse ferric magnetosphere, ferromagnetic layer II and protective layer successively on substrate, promptly make the semi-finished product of pinning material;
B, with the semi-finished product of this pinning material, be parallel under the externally-applied magnetic field of general magnetic field intensity of sample easy axis direction one and carry out vacuum annealing, promptly obtain finished product after the annealing;
During the vacuum deposition method coating of said step a, base vacuum air pressure is superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.8Pa;
The annealing temperature of the annealing process among the said step b is that 500 ℃, annealing time are that 3.0 hours, base vacuum are superior to 10
-3Pa.
Other is with arbitrary among embodiment 1,2 or the embodiment 6-11, slightly.
Embodiment 15-20: referring to accompanying drawing 1.
A kind of ferromagnetic/antiferromagnetic multilayer film pinning material (magnetoresistance effect system), by substrate 1, on substrate 1, plate resilient coating 2, first ferromagnetic layer 3, first inverse ferric magnetosphere 4, second ferromagnetic layer 5, second inverse ferric magnetosphere 6 and protective layer 7 successively and form; Layers of material sees the following form:
Embodiment 21:
A kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, may further comprise the steps:
Adopt vacuum deposition method, on substrate 1, plate resilient coating 2, first ferromagnetic layer 3, first inverse ferric magnetosphere 4, second ferromagnetic layer 5, second inverse ferric magnetosphere 6 and protective layer 7 successively;
When adopting said vacuum deposition method coating, the base vacuum atmospheric pressure is superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.8Pa.
Other is with arbitrary among embodiment 3,4 or the embodiment 15-20, slightly.
Embodiment 22:
A kind of ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, may further comprise the steps:
Adopt vacuum deposition method, on substrate 1, plate resilient coating 2, first ferromagnetic layer 3, first inverse ferric magnetosphere 4, second ferromagnetic layer 5, second inverse ferric magnetosphere 6 and protective layer 7 successively;
When adopting said vacuum deposition method coating, the base vacuum atmospheric pressure is superior to 10
-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.1Pa.
Other is with arbitrary among embodiment 3,4 or the embodiment 15-20, slightly.
The invention is not restricted to the foregoing description, content of the present invention is said all can implement and have said good result.
Claims (5)
1. ferromagnetic/antiferromagnetic multilayer film pinning material is characterized in that comprising:
Substrate and on substrate, set gradually
Resilient coating is used to induce the inverse ferric magnetosphere of texture;
First ferromagnetic layer is arranged on the resilient coating;
First inverse ferric magnetosphere is arranged on first ferromagnetic layer;
Second ferromagnetic layer is arranged on first inverse ferric magnetosphere;
Second inverse ferric magnetosphere is arranged on second ferromagnetic layer; And
Be arranged at the protective layer on second inverse ferric magnetosphere.
By claim 1 described ferromagnetic/antiferromagnetic multilayer film pinning material, it is characterized in that:
Said first inverse ferric magnetosphere is that NiO or manganese are a kind of among antiferromagnet FeMn or the IrMn;
Said second inverse ferric magnetosphere is that manganese is a kind of among antiferromagnet FeMn, NiMn, PtMn, PdMn or the IrMn, or a kind of among artificial antiferromagnet Co/Ru/Co, CoFe/Ru/CoFe, NiFe/Ru/NiFe or the Co/Cu/Co.
By claim 1 described ferromagnetic/antiferromagnetic multilayer film pinning material, it is characterized in that: described first ferromagnetic layer and second ferromagnetic layer are a kind of among soft magnetic material NiFe, Co or the CoFe.
By claim 1 described ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, it is characterized in that may further comprise the steps:
A, employing vacuum deposition method plate resilient coating, first ferromagnetic layer, first inverse ferric magnetosphere, second ferromagnetic layer, second inverse ferric magnetosphere and protective layer successively on substrate.
By claim 4 described ferromagnetic/preparation method of antiferromagnetic multilayer film pinning material, it is characterized in that: when adopting described vacuum deposition method coating, the base vacuum atmospheric pressure is superior to 10-4Pa, and the deposition operating air pressure under the inert atmosphere is 0.1～0.8Pa.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101772858A CN101834053B (en) | 2010-05-19 | 2010-05-19 | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2010101772858A CN101834053B (en) | 2010-05-19 | 2010-05-19 | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101834053A CN101834053A (en) | 2010-09-15 |
| CN101834053B true CN101834053B (en) | 2012-07-04 |
Family
ID=42718091
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2010101772858A Expired - Fee Related CN101834053B (en) | 2010-05-19 | 2010-05-19 | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101834053B (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104851975A (en) * | 2015-01-07 | 2015-08-19 | 内蒙古大学 | Anisotropic magnetic resistance material with NiFe alloy magnetic layer and preparation method of anisotropic magnetic resistance material |
| CN109166690B (en) * | 2018-08-27 | 2021-05-04 | 电子科技大学 | Anisotropic magneto-resistance based on multilayer exchange bias structure |
| CN110808331A (en) * | 2019-11-19 | 2020-02-18 | 郑州工程技术学院 | Giant magnetoresistance film and preparation method thereof |
| CN115148896A (en) * | 2022-06-10 | 2022-10-04 | 珠海多创科技有限公司 | Magnetic sensor, preparation method thereof and electronic equipment |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588579A (en) * | 2004-09-02 | 2005-03-02 | 中国科学院物理研究所 | Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method |
| CN1967891A (en) * | 2005-11-15 | 2007-05-23 | 中国科学院物理研究所 | Magnetic multilayer film with linear magnetoresistance effect and its application |
-
2010
- 2010-05-19 CN CN2010101772858A patent/CN101834053B/en not_active Expired - Fee Related
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1588579A (en) * | 2004-09-02 | 2005-03-02 | 中国科学院物理研究所 | Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method |
| CN1967891A (en) * | 2005-11-15 | 2007-05-23 | 中国科学院物理研究所 | Magnetic multilayer film with linear magnetoresistance effect and its application |
Non-Patent Citations (1)
| Title |
|---|
| 王烨丽等.铁磁/反铁磁/铁磁三层膜系统中反铁磁自旋结构及其交换各向异性.《计算物理》.2010,第27卷(第1期), * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101834053A (en) | 2010-09-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8385027B2 (en) | TMR device with novel free layer structure | |
| CN107923956B (en) | Magnetoresistive sensor | |
| CN101471420A (en) | Double exchange bias field type spinning valve | |
| EP1612775A3 (en) | Extraordinary magnetoresistive sensor with in-stack bias | |
| CN101996734B (en) | Linear response giant magnetoresistance effect multilayer film | |
| JPH10223942A (en) | Manufacturing method of magneto-resistance effect element | |
| CN101834053B (en) | Ferromagnetic/anti-ferromagnetic multilayer film pinning material and preparation method thereof | |
| CN101853920B (en) | Method for preparing double-exchange biasing field type spin valve | |
| Liu et al. | Large perpendicular exchange bias in IrMn/CoFe/[Pt/Co] multilayers grown on a Ta/Pt buffer layer | |
| CN100383897C (en) | Iron magnetic/anti iron magnet multilayer film pinning system and its preparing method | |
| US10784438B2 (en) | Magnetoresistive effect element | |
| CN101944365B (en) | Method for improving magnetism and heat stability of exchange bias membrane | |
| Guedes et al. | Study of synthetic ferrimagnet-synthetic antiferromagnet structures for magnetic sensor application | |
| CN100452255C (en) | Ferromagnetic/antiferromagnetic multilayer membrane material with pinning and its preparing method | |
| KR102510134B1 (en) | non-ferromagnetic spacing composite layer, its method, synthetic antiferromagnetic laminated structure, and magnetoresistive random access memory | |
| US20070215955A1 (en) | Magnetic tunneling junction structure for magnetic random access memory | |
| Wu et al. | Antiferromagnetically coupled hard/Ru/soft layers and their applications in spin valves | |
| Engel et al. | Alteration of exchange anisotropy and magnetoresistance in Co/Cu/Co/FeMn spin valves by ion bombardment | |
| CN101593601A (en) | A kind of semi-metal synthetic anti-ferromagnetic structure | |
| CN105845822B (en) | A kind of method for adjusting the giant magnet resistance film range of linearity | |
| CN103424131A (en) | Method for preparing perpendicular bias magnetic sensing unit | |
| WO2018061710A1 (en) | Magnetoresistive effect element | |
| Tondra et al. | High temperature pinning properties of IrMn versus FeMn in spin valves | |
| Bai et al. | Effects of different relevant layers on magnetic properties of bottom synthetic irmn spin valves | |
| Lenssen et al. | Improving magnetoresistance characteristics by toppings |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20120704 Termination date: 20130519 |