SG11202002555WA - Ultra-localized and plasma uniformity control in a fabrication process - Google Patents

Ultra-localized and plasma uniformity control in a fabrication process

Info

Publication number
SG11202002555WA
SG11202002555WA SG11202002555WA SG11202002555WA SG11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA SG 11202002555W A SG11202002555W A SG 11202002555WA
Authority
SG
Singapore
Prior art keywords
localized
ultra
fabrication process
plasma uniformity
uniformity control
Prior art date
Application number
SG11202002555WA
Inventor
Barton G Lane
Peter G Ventzek
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of SG11202002555WA publication Critical patent/SG11202002555WA/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H01J37/32211—Means for coupling power to the plasma
    • H01J37/3222—Antennas
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32366—Localised processing
    • H01J37/32385—Treating the edge of the workpieces
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
SG11202002555WA 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process SG11202002555WA (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US15/723,005 US11551909B2 (en) 2017-10-02 2017-10-02 Ultra-localized and plasma uniformity control in a plasma processing system
PCT/US2018/053373 WO2019070524A1 (en) 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process

Publications (1)

Publication Number Publication Date
SG11202002555WA true SG11202002555WA (en) 2020-04-29

Family

ID=65896170

Family Applications (1)

Application Number Title Priority Date Filing Date
SG11202002555WA SG11202002555WA (en) 2017-10-02 2018-09-28 Ultra-localized and plasma uniformity control in a fabrication process

Country Status (7)

Country Link
US (1) US11551909B2 (en)
JP (1) JP7264576B2 (en)
KR (1) KR20200051663A (en)
CN (1) CN111183504B (en)
SG (1) SG11202002555WA (en)
TW (1) TW201929031A (en)
WO (1) WO2019070524A1 (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102330944B1 (en) * 2018-01-29 2021-12-01 가부시키가이샤 알박 Reactive Ion Etching Apparatus
US11037765B2 (en) * 2018-07-03 2021-06-15 Tokyo Electron Limited Resonant structure for electron cyclotron resonant (ECR) plasma ionization
KR20240046497A (en) * 2021-08-20 2024-04-09 도쿄엘렉트론가부시키가이샤 plasma processing device
KR102399398B1 (en) * 2021-09-27 2022-05-18 아리온주식회사 RF split adjusting system

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US2997294A (en) * 1955-09-15 1961-08-22 Gen Electric Apparatus for feeding, cutting and stacking material for capacitors
US4864464A (en) * 1989-01-09 1989-09-05 Micron Technology, Inc. Low-profile, folded-plate dram-cell capacitor fabricated with two mask steps
US6353206B1 (en) * 1996-05-30 2002-03-05 Applied Materials, Inc. Plasma system with a balanced source
US6178920B1 (en) * 1997-06-05 2001-01-30 Applied Materials, Inc. Plasma reactor with internal inductive antenna capable of generating helicon wave
US6388226B1 (en) * 1997-06-26 2002-05-14 Applied Science And Technology, Inc. Toroidal low-field reactive gas source
US7100532B2 (en) 2001-10-09 2006-09-05 Plasma Control Systems, Llc Plasma production device and method and RF driver circuit with adjustable duty cycle
JP2003234338A (en) * 2002-02-08 2003-08-22 Tokyo Electron Ltd Inductively coupled plasma treatment apparatus
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP2007258570A (en) 2006-03-24 2007-10-04 Mitsui Eng & Shipbuild Co Ltd Plasma processing device
US20170213734A9 (en) 2007-03-30 2017-07-27 Alexei Marakhtanov Multifrequency capacitively coupled plasma etch chamber
US7976674B2 (en) * 2007-06-13 2011-07-12 Tokyo Electron Limited Embedded multi-inductive large area plasma source
JP5165993B2 (en) 2007-10-18 2013-03-21 東京エレクトロン株式会社 Plasma processing equipment
JP4540742B2 (en) 2008-01-25 2010-09-08 三井造船株式会社 Atomic layer growth apparatus and thin film forming method
US9017533B2 (en) 2008-07-15 2015-04-28 Applied Materials, Inc. Apparatus for controlling radial distribution of plasma ion density and ion energy at a workpiece surface by multi-frequency RF impedance tuning
JP5391659B2 (en) * 2008-11-18 2014-01-15 東京エレクトロン株式会社 Plasma processing equipment
JP5916044B2 (en) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP2012133899A (en) * 2010-12-20 2012-07-12 Nissin Electric Co Ltd Plasma processing device
JP5781349B2 (en) 2011-03-30 2015-09-24 東京エレクトロン株式会社 Plasma processing equipment
JP5712874B2 (en) * 2011-09-05 2015-05-07 東京エレクトロン株式会社 Film forming apparatus, film forming method, and storage medium
US9881772B2 (en) 2012-03-28 2018-01-30 Lam Research Corporation Multi-radiofrequency impedance control for plasma uniformity tuning
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JP2017004602A (en) 2015-06-04 2017-01-05 日新電機株式会社 Antenna for plasma generation and plasma processing apparatus comprising the same

Also Published As

Publication number Publication date
WO2019070524A1 (en) 2019-04-11
CN111183504B (en) 2023-07-21
JP2021503686A (en) 2021-02-12
KR20200051663A (en) 2020-05-13
CN111183504A (en) 2020-05-19
TW201929031A (en) 2019-07-16
US11551909B2 (en) 2023-01-10
US20190103254A1 (en) 2019-04-04
JP7264576B2 (en) 2023-04-25

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