JP7368505B2 - 積層集積回路ダイ素子と電池を集積するためのシステムおよび方法 - Google Patents

積層集積回路ダイ素子と電池を集積するためのシステムおよび方法 Download PDF

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JP7368505B2
JP7368505B2 JP2021569081A JP2021569081A JP7368505B2 JP 7368505 B2 JP7368505 B2 JP 7368505B2 JP 2021569081 A JP2021569081 A JP 2021569081A JP 2021569081 A JP2021569081 A JP 2021569081A JP 7368505 B2 JP7368505 B2 JP 7368505B2
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volatile memory
integrated circuit
circuit die
state
power
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Japanese (ja)
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JP2022531983A (ja
Inventor
グジー，ダレル・ジェームズ
リウ，ウェイ－ティ
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アーバー・カンパニー・エルエルエルピイ
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Priority claimed from US16/810,790 external-priority patent/US10782759B1/en
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00315—Modifications for increasing the reliability for protection in field-effect transistor circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0657—Stacked arrangements of devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/10—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers
    • H01L25/105—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in group H01L27/00
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/173—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components
    • H03K19/177—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using elementary logic circuits as components arranged in matrix form
    • H03K19/17748—Structural details of configuration resources
    • H03K19/1776—Structural details of configuration resources for memories
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2225/00—Details relating to assemblies covered by the group H01L25/00 but not provided for in its subgroups
    • H01L2225/03—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00
    • H01L2225/04—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers
    • H01L2225/065—All the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/648 and H10K99/00 the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L2225/06503—Stacked arrangements of devices
    • H01L2225/06541—Conductive via connections through the device, e.g. vertical interconnects, through silicon via [TSV]

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Mathematical Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Battery Mounting, Suspending (AREA)
JP2021569081A 2019-05-21 2020-04-21 積層集積回路ダイ素子と電池を集積するためのシステムおよび方法 Active JP7368505B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
US201962850996P 2019-05-21 2019-05-21
US62/850,996 2019-05-21
US202016788954A 2020-02-12 2020-02-12
US16/788,954 2020-02-12
US16/810,790 US10782759B1 (en) 2019-04-23 2020-03-05 Systems and methods for integrating batteries with stacked integrated circuit die elements
US16/810,790 2020-03-05
PCT/US2020/029163 WO2020236379A1 (en) 2019-05-21 2020-04-21 Systems and methods for integrating batteries with stacked integrated circuit die elements

Publications (2)

Publication Number Publication Date
JP2022531983A JP2022531983A (ja) 2022-07-12
JP7368505B2 true JP7368505B2 (ja) 2023-10-24

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JP2021569081A Active JP7368505B2 (ja) 2019-05-21 2020-04-21 積層集積回路ダイ素子と電池を集積するためのシステムおよび方法

Country Status (5)

Country Link
EP (1) EP3973528A4 (zh)
JP (1) JP7368505B2 (zh)
KR (1) KR102440800B1 (zh)
CN (1) CN114402271B (zh)
WO (1) WO2020236379A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
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JP2003223937A (ja) 2002-01-29 2003-08-08 Sony Corp 電力制御装置、電力制御方法、及び情報処理装置、並びに電力制御プログラム
JP2005110443A (ja) 2003-10-01 2005-04-21 Hitachi Ltd 携帯情報端末
JP2005512229A (ja) 2001-12-05 2005-04-28 アーバー・カンパニー・リミテッド・ライアビリティ・パートナーシップ 混成の積み重ねられた集積回路ダイ要素を含む再構成可能なプロセッサモジュール
US20060001137A1 (en) 2004-06-30 2006-01-05 Stmicroelectronics, Inc. Integrated circuit package including embedded thin-film battery
JP2009118441A (ja) 2007-11-09 2009-05-28 Sony Ericsson Mobilecommunications Japan Inc 携帯端末

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US5569997A (en) * 1993-10-04 1996-10-29 Ford Motor Company Power supply for volatile memory devices and portable electrical appliance in vehicles
US6789037B2 (en) * 1999-03-30 2004-09-07 Intel Corporation Methods and apparatus for thermal management of an integrated circuit die
US7126214B2 (en) * 2001-12-05 2006-10-24 Arbor Company Llp Reconfigurable processor module comprising hybrid stacked integrated circuit die elements
US6765408B2 (en) * 2002-02-11 2004-07-20 Lattice Semiconductor Corporation Device and method with generic logic blocks
US7755946B2 (en) * 2008-09-19 2010-07-13 Sandisk Corporation Data state-based temperature compensation during sensing in non-volatile memory
US8566639B2 (en) * 2009-02-11 2013-10-22 Stec, Inc. Flash backed DRAM module with state of health and/or status information accessible through a configuration data bus
JP5611727B2 (ja) * 2010-08-27 2014-10-22 三洋電機株式会社 電源装置
KR101844963B1 (ko) * 2011-03-07 2018-04-04 삼성전자주식회사 불 휘발성 메모리 장치 및 그것의 동작 방법
US9779016B1 (en) * 2012-07-25 2017-10-03 Smart Modular Technologies, Inc. Computing system with backup and recovery mechanism and method of operation thereof
CN103252783B (zh) * 2013-05-08 2016-01-20 苏州工业园区职业技术学院 一种双核两自由度高速全自动锡焊机器人伺服控制器
JP6177662B2 (ja) * 2013-10-29 2017-08-09 京セラ株式会社 携帯端末
WO2015087271A2 (en) 2013-12-12 2015-06-18 Koninklijke Philips N.V. Method to enable standard alternating current (ac)/direct current (dc) power adapters to operate in high magnetic fields
CN103904748A (zh) * 2014-04-09 2014-07-02 西北工业大学 一种基于fpga的小卫星电源系统
JP2016053757A (ja) * 2014-09-02 2016-04-14 株式会社東芝 メモリシステム
US20170123674A1 (en) * 2015-11-03 2017-05-04 Kabushiki Kaisha Toshiba Storage system that includes a plurality of routing circuits and a plurality of node modules connected thereto
US10784121B2 (en) * 2016-08-15 2020-09-22 Xilinx, Inc. Standalone interface for stacked silicon interconnect (SSI) technology integration
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Patent Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2005512229A (ja) 2001-12-05 2005-04-28 アーバー・カンパニー・リミテッド・ライアビリティ・パートナーシップ 混成の積み重ねられた集積回路ダイ要素を含む再構成可能なプロセッサモジュール
JP2003223937A (ja) 2002-01-29 2003-08-08 Sony Corp 電力制御装置、電力制御方法、及び情報処理装置、並びに電力制御プログラム
JP2005110443A (ja) 2003-10-01 2005-04-21 Hitachi Ltd 携帯情報端末
US20060001137A1 (en) 2004-06-30 2006-01-05 Stmicroelectronics, Inc. Integrated circuit package including embedded thin-film battery
JP2009118441A (ja) 2007-11-09 2009-05-28 Sony Ericsson Mobilecommunications Japan Inc 携帯端末

Also Published As

Publication number Publication date
KR102440800B1 (ko) 2022-09-06
EP3973528A4 (en) 2022-08-03
KR20220024087A (ko) 2022-03-03
JP2022531983A (ja) 2022-07-12
CN114402271B (zh) 2023-06-09
EP3973528A1 (en) 2022-03-30
WO2020236379A1 (en) 2020-11-26
CN114402271A (zh) 2022-04-26

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