JP7357390B2 - 回転軸密閉装置及びこれを用いる半導体基板処理装置 - Google Patents
回転軸密閉装置及びこれを用いる半導体基板処理装置 Download PDFInfo
- Publication number
- JP7357390B2 JP7357390B2 JP2021543223A JP2021543223A JP7357390B2 JP 7357390 B2 JP7357390 B2 JP 7357390B2 JP 2021543223 A JP2021543223 A JP 2021543223A JP 2021543223 A JP2021543223 A JP 2021543223A JP 7357390 B2 JP7357390 B2 JP 7357390B2
- Authority
- JP
- Japan
- Prior art keywords
- rotating shaft
- seal
- housing
- semiconductor substrate
- substrate processing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/16—Sealings between relatively-moving surfaces
- F16J15/162—Special parts or details relating to lubrication or cooling of the sealing itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67126—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
- C23C14/505—Substrate holders for rotation of the substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
- C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4408—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber by purging residual gases from the reaction chamber or gas lines
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
- C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/16—Sealings between relatively-moving surfaces
- F16J15/18—Sealings between relatively-moving surfaces with stuffing-boxes for elastic or plastic packings
- F16J15/182—Sealings between relatively-moving surfaces with stuffing-boxes for elastic or plastic packings with lubricating, cooling or draining means
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/16—Sealings between relatively-moving surfaces
- F16J15/18—Sealings between relatively-moving surfaces with stuffing-boxes for elastic or plastic packings
- F16J15/24—Sealings between relatively-moving surfaces with stuffing-boxes for elastic or plastic packings with radially or tangentially compressed packing
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16J—PISTONS; CYLINDERS; SEALINGS
- F16J15/00—Sealings
- F16J15/44—Free-space packings
- F16J15/447—Labyrinth packings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Sealing With Elastic Sealing Lips (AREA)
- Sealing Using Fluids, Sealing Without Contact, And Removal Of Oil (AREA)
- Sealing Devices (AREA)
Description
図1は、本発明の一実施形態に係る回転軸密閉装置と半導体基板処理装置を示す図であり、図2は、本発明の一実施形態に係る回転軸密閉装置の斜視図である。図3は、図2に示す回転軸密閉装置の平面図であり、図4は、図2において線IV-IVに沿って取った断面図である。
図5を参照すると、本発明の他の実施形態に係る回転軸密閉装置は、図4に示されている回転軸密閉装置と同一であり、パージガス流入路172がシーリング部150に向かって、追加的に設けられた分岐部172aを含む点だけが異なる。パージガス流入路172が分岐部172aを介してシーリング部150内部のバッファ空間150aと連通しているため、シーリング部150の間にパーティクルなどの異物が残されている場合でも、パージガスを介して清掃することができる。本実施形態において、バッファ空間150aは弾性シール156の間に設けられることができる。
Claims (13)
- 半導体基板を収容する半導体積載ユニットを回転させて前記半導体基板を処理する半導体基板処理装置に装着される回転軸密閉装置であって、
前記半導体基板処理装置に装着される中空のハウジングと、
前記ハウジング内に収容され、前記半導体積載ユニットに接続されて前記半導体積載ユニットに回転力を伝達する回転軸と、
前記回転軸を前記ハウジング内に回転自在に支持するベアリングと、
前記ハウジングと前記回転軸との間の間隙を密封するように前記ハウジング内に配置される複数のシールを備えるシーリング部と、
前記回転軸の一端に装着されて前記回転軸に回転力を伝達する動力伝達部とを含んでおり、
前記シーリング部は、
前記回転軸と接して前記回転軸に沿って並設されており、前記半導体基板処理装置の真空を保持するための複数の真空シールと、
前記回転軸と接して前記回転軸に沿って並設されており、前記回転軸を支持して振動を抑制する複数の弾性シールとを含み、
前記複数の真空シールと前記複数の弾性シールはプラスチック材質で形成され、前記複数の弾性シールは前記複数の真空シールよりも弾性力が大きく、
前記複数の前記真空シール及び前記複数の前記弾性シールが前記回転軸の軸長方向に連設している回転軸密閉装置。 - 前記シーリング部は、前記半導体基板処理装置と結合する前記ハウジングのフランジ部により近づくように前記ベアリングよりも上部に配置され、
前記動力伝達部は、前記ベアリングの下部に配置される、請求項1に記載の回転軸密閉装置。 - 前記真空シールは、環状のシーリングの内周緑に湾曲したリップが形成されたリップシールであり、
前記弾性シールは、シールボディの内部に弾性部材が挿入される、請求項1に記載の回転軸密閉装置。 - 前記真空シール及び前記弾性シールの前記ハウジング内で前記ハウジングとの相対回転を防止するように、前記真空シール及び前記弾性シールの前記ハウジングに向かう外周面には環状の回転防止部材が設けられる、請求項1に記載の回転軸密閉装置。
- 前記真空シールは、前記半導体基板処理装置と結合する前記ハウジングのフランジ部に前記弾性シールよりも近く配置され、
前記弾性シールは、前記ベアリングに前記真空シールよりも近く配置される、請求項1に記載の回転軸密閉装置。 - 前記シーリング部は、前記半導体基板処理装置の内部が加圧された場合、前記半導体基板処理装置から異物が内部に流入することを防止するための圧力シールをさらに含む、請求項1に記載の回転軸密閉装置。
- 前記シーリング部の上部には、前記半導体基板処理装置からの異物が前記ハウジング内に流入することを防止するためのラビリンスシールが設けられる、請求項1に記載の回転軸密閉装置。
- 前記ハウジングは、前記シーリング部を冷却させるように前記シーリング部の周縁に設けられる冷却水ジャケットを含む、請求項1に記載の回転軸密閉装置。
- 前記ハウジングは、
前記半導体基板処理装置からの異物が前記ハウジング内に流入することを防止するよう、前記ハウジング内に設けられたパージガス流入路と、
前記パージガス流入路を介して外部からパージガスを流入させるよう、前記ハウジングの側面に設けられたパージガス流入ポートと、
を含む、請求項1に記載の回転軸密閉装置。 - 前記シーリング部の上部には、前記半導体基板処理装置からの異物が前記ハウジング内に流入することを防止するためのラビリンスシールが設けられ、
前記パージガス流入路を介して移動した前記パージガスは、前記ラビリンスシールを介して前記半導体基板処理装置に供給される、請求項9に記載の回転軸密閉装置。 - 半導体基板を処理する半導体基板処理装置であって、
内部に複数の半導体基板を収容する工程チューブと、
前記工程チューブ内に昇降可能に配置される半導体積載ユニットと、
前記工程チューブの内側に設けられて工程ガスを注入するためのノズルユニットと、
前記半導体積載ユニットと接続して前記工程チューブの下部を密閉するシーリングキャップと、
前記半導体積載ユニットを回転させ、密閉機能を行う回転軸密閉装置と、
を含み、
前記回転軸密閉装置は、
前記シーリングキャップに装着される中空のハウジングと、
前記ハウジング内に収容され、前記半導体積載ユニットに接続されて前記半導体積載ユニットに回転力を伝達する回転軸と、
前記回転軸を前記ハウジング内に回転自在に支持するベアリングと、
前記ハウジングと前記回転軸との間の間隙を密封する複数のシールを備えるシーリング部と、
前記回転軸の一端に装着されて前記回転軸に回転力を伝達する動力伝達部とを含んでおり、
前記シーリング部は、
前記回転軸と接して前記回転軸に沿って並設されており、前記半導体基板処理装置の真空を保持するための複数の真空シールと、
前記回転軸と接して前記回転軸に沿って並設されており、前記回転軸を支持して振動を抑制する複数の弾性シールとを含み、
前記複数の真空シールと前記複数の弾性シールはプラスチック材質で形成され、前記複数の弾性シールは前記複数の真空シールよりも弾性力が大きく、
前記複数の前記真空シール及び前記複数の前記弾性シールが前記回転軸の軸長方向に連設している半導体基板処理装置。 - 前記シーリング部は、前記シーリングキャップに結合される前記ハウジングのフランジ部により近づくように前記ベアリングよりも上部に配置され、
前記動力伝達部は、前記ベアリングの下部に配置される、請求項11に記載の半導体基板処理装置。 - 前記真空シールは、環状のシーリングの内周緑に湾曲したリップが形成されたリップシールであり、
前記弾性シールは、シールボディの内部に弾性部材が挿入される、請求項11に記載の半導体基板処理装置。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2023096480A JP2023110096A (ja) | 2020-06-19 | 2023-06-12 | 回転軸密閉装置及びこれを用いる半導体基板処理装置 |
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020200075341A KR102378581B1 (ko) | 2020-06-19 | 2020-06-19 | 회전축 밀폐장치 및 이를 이용하는 반도체 기판처리장치 |
KR10-2020-0075341 | 2020-06-19 | ||
PCT/KR2021/007237 WO2021256772A1 (ko) | 2020-06-19 | 2021-06-10 | 회전축 밀폐장치 및 이를 이용하는 반도체 기판처리장치 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023096480A Division JP2023110096A (ja) | 2020-06-19 | 2023-06-12 | 回転軸密閉装置及びこれを用いる半導体基板処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022541695A JP2022541695A (ja) | 2022-09-27 |
JP7357390B2 true JP7357390B2 (ja) | 2023-10-06 |
Family
ID=79022422
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021543223A Active JP7357390B2 (ja) | 2020-06-19 | 2021-06-10 | 回転軸密閉装置及びこれを用いる半導体基板処理装置 |
JP2023096480A Pending JP2023110096A (ja) | 2020-06-19 | 2023-06-12 | 回転軸密閉装置及びこれを用いる半導体基板処理装置 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2023096480A Pending JP2023110096A (ja) | 2020-06-19 | 2023-06-12 | 回転軸密閉装置及びこれを用いる半導体基板処理装置 |
Country Status (6)
Country | Link |
---|---|
US (1) | US11764102B2 (ja) |
EP (1) | EP4170702A4 (ja) |
JP (2) | JP7357390B2 (ja) |
KR (1) | KR102378581B1 (ja) |
CN (1) | CN114174701A (ja) |
WO (1) | WO2021256772A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111364026B (zh) * | 2020-05-27 | 2020-08-14 | 上海陛通半导体能源科技股份有限公司 | 往复式旋转cvd设备及应用方法 |
KR102378581B1 (ko) * | 2020-06-19 | 2022-03-24 | 씰링크 주식회사 | 회전축 밀폐장치 및 이를 이용하는 반도체 기판처리장치 |
CN114370505A (zh) * | 2022-01-17 | 2022-04-19 | 江苏邑文微电子科技有限公司 | 一种适用于真空中运动部件的组合密封机构及半导体设备 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004036897A (ja) | 2003-09-09 | 2004-02-05 | Ts Corporation | 真空チャンバーに用いる回転軸のシール機構 |
Family Cites Families (31)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06204157A (ja) * | 1992-12-25 | 1994-07-22 | Tokyo Electron Tohoku Ltd | 縦型熱処理装置 |
JPH0758036A (ja) * | 1993-08-16 | 1995-03-03 | Ebara Corp | 薄膜形成装置 |
JPH09229206A (ja) * | 1996-02-22 | 1997-09-05 | Mitsubishi Heavy Ind Ltd | 軸封装置 |
JP3156920B2 (ja) * | 1996-05-15 | 2001-04-16 | 日本エー・エス・エム株式会社 | 半導体処理装置 |
JP3556804B2 (ja) * | 1997-05-20 | 2004-08-25 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP2002280374A (ja) * | 2001-03-19 | 2002-09-27 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
JP2003113946A (ja) | 2001-10-05 | 2003-04-18 | Mitsubishi Cable Ind Ltd | 軸シール装置 |
JP4047024B2 (ja) | 2002-01-31 | 2008-02-13 | 古河機械金属株式会社 | ポンプの軸封装置 |
JP3369165B1 (ja) * | 2002-04-09 | 2003-01-20 | 東京エレクトロン株式会社 | 縦型熱処理装置 |
US8057599B2 (en) * | 2003-02-21 | 2011-11-15 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus and method for manufacturing a semiconductor device |
KR100496990B1 (ko) | 2003-04-11 | 2005-06-23 | 주식회사 신원기계부품 | 회전축용 밀폐장치 |
KR100530742B1 (ko) * | 2003-12-31 | 2005-11-23 | 두산디앤디 주식회사 | 반도체 웨이퍼 표면연마장비의 캐리어용 다중 유체공급장치 |
JP2006046449A (ja) | 2004-08-03 | 2006-02-16 | Nok Corp | 密封装置 |
JP2006179613A (ja) * | 2004-12-21 | 2006-07-06 | Rigaku Corp | 半導体ウエハ縦型熱処理装置用磁性流体シールユニット |
WO2007001100A1 (en) * | 2005-06-28 | 2007-01-04 | Doosan Mecatec Co., Ltd. | Multiple fluid supplying apparatus for carrier of semiconductor wafer polishing system |
KR100756029B1 (ko) * | 2006-03-16 | 2007-09-07 | 주식회사 신원기계부품 | 진공 압력 장비용 회전 및 왕복운동 밀폐장치 |
KR101077106B1 (ko) * | 2006-08-11 | 2011-10-26 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 반도체 장치의 제조 방법 |
JP2010080922A (ja) * | 2008-08-29 | 2010-04-08 | Hitachi Kokusai Electric Inc | 基板処理装置及び半導体装置の製造方法 |
KR101556356B1 (ko) * | 2009-06-23 | 2015-10-02 | 주성엔지니어링(주) | 가스 분사 장치 및 이를 구비하는 박막 제조 장치 |
CN105765277B (zh) * | 2013-12-10 | 2017-11-17 | 日本精工株式会社 | 密封机构、密封机构的驱动装置、输送装置和制造装置 |
JP6015715B2 (ja) * | 2013-12-10 | 2016-10-26 | 日本精工株式会社 | シール機構、シール機構の駆動装置、搬送装置及び製造装置 |
KR20150106546A (ko) * | 2014-03-12 | 2015-09-22 | 주식회사 태한이엔씨 | 종형 열처리 장치 |
JP2016021524A (ja) * | 2014-07-15 | 2016-02-04 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101731439B1 (ko) * | 2015-10-05 | 2017-05-02 | (주) 디노솔루션 | 자성유체씰 및 이를 기반으로 하는 반도체 공정 이상유무 판단방법 |
KR102060400B1 (ko) * | 2018-02-13 | 2020-02-11 | 씰링크 주식회사 | 직선운동 로터리 유니온 |
WO2019177329A1 (ko) * | 2018-03-14 | 2019-09-19 | 씰링크 주식회사 | 회전운동 밀폐장치 |
KR102098604B1 (ko) * | 2018-03-14 | 2020-04-08 | 씰링크 주식회사 | 직선 및 회전운동 밀폐장치 |
KR102045873B1 (ko) * | 2018-04-23 | 2019-11-18 | 씰링크 주식회사 | 회전운동 밀폐장치 |
JP2021081062A (ja) | 2019-11-14 | 2021-05-27 | Nok株式会社 | 密封構造 |
KR102378581B1 (ko) * | 2020-06-19 | 2022-03-24 | 씰링크 주식회사 | 회전축 밀폐장치 및 이를 이용하는 반도체 기판처리장치 |
JP7344594B2 (ja) * | 2020-06-23 | 2023-09-14 | シーリンク株式会社 | 回転軸シール及びこれを用いる部品移送装置 |
-
2020
- 2020-06-19 KR KR1020200075341A patent/KR102378581B1/ko active IP Right Grant
- 2020-12-18 US US17/126,463 patent/US11764102B2/en active Active
-
2021
- 2021-06-10 EP EP21736948.7A patent/EP4170702A4/en active Pending
- 2021-06-10 JP JP2021543223A patent/JP7357390B2/ja active Active
- 2021-06-10 CN CN202180001972.0A patent/CN114174701A/zh active Pending
- 2021-06-10 WO PCT/KR2021/007237 patent/WO2021256772A1/ko unknown
-
2023
- 2023-06-12 JP JP2023096480A patent/JP2023110096A/ja active Pending
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004036897A (ja) | 2003-09-09 | 2004-02-05 | Ts Corporation | 真空チャンバーに用いる回転軸のシール機構 |
Also Published As
Publication number | Publication date |
---|---|
US20210398844A1 (en) | 2021-12-23 |
JP2022541695A (ja) | 2022-09-27 |
EP4170702A1 (en) | 2023-04-26 |
WO2021256772A1 (ko) | 2021-12-23 |
JP2023110096A (ja) | 2023-08-08 |
CN114174701A (zh) | 2022-03-11 |
US11764102B2 (en) | 2023-09-19 |
KR102378581B1 (ko) | 2022-03-24 |
EP4170702A4 (en) | 2024-07-24 |
KR20210157261A (ko) | 2021-12-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7357390B2 (ja) | 回転軸密閉装置及びこれを用いる半導体基板処理装置 | |
JP4768844B2 (ja) | 基板処理装置及び半導体デバイスの製造方法 | |
JP5096930B2 (ja) | 冷却循環通路を備えた基板搬送用ロボットの駆動装置 | |
JP5960028B2 (ja) | 熱処理装置 | |
US6030457A (en) | Substrate processing apparatus | |
KR20140001880A (ko) | 웨이퍼 습식 프로세싱을 위한 폐쇄형 챔버 | |
KR102644639B1 (ko) | 로터리 유니온 조립체 | |
JP4409312B2 (ja) | 基板周縁処理装置および基板周縁処理方法 | |
JP2007263345A (ja) | シール装置 | |
KR102540307B1 (ko) | 직선 및 회전운동 밀폐장치 및 이를 이용하는 반도체 기판처리장치 | |
TWI802925B (zh) | 旋轉軸密封裝置及使用其之半導體基體用加工設備 | |
KR102540308B1 (ko) | 회전축 밀폐장치 | |
TWI802003B (zh) | 半導體反應腔室 | |
JPH10244201A (ja) | 基板処理装置 | |
JP2002280373A (ja) | 基板処理装置 | |
KR102612086B1 (ko) | 파티클 프리 원격플라즈마소스 차단밸브 | |
JP4594031B2 (ja) | 基板保持装置 | |
JP3688243B2 (ja) | 半導体製造装置 | |
JP2002280374A (ja) | 基板処理装置及び半導体装置の製造方法 | |
KR101891825B1 (ko) | 증착공정용 개폐장치 | |
KR100890921B1 (ko) | 반도체 제조 장치 | |
KR102673030B1 (ko) | 회전하는 가스 터렛을 갖는 박막 증착 장치 | |
KR102628826B1 (ko) | 기판처리장치, 기판처리장치용 밸브 및 밸브 구동방법 | |
KR20230174423A (ko) | 로터리 유니온 조립체 | |
JP2001345276A (ja) | 減圧処理装置の回転機構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210726 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20221004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20221228 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20230404 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20230612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A821 Effective date: 20230612 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20230731 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20230912 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20230919 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7357390 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |