JP7357301B2 - 半導体膜及び半導体膜の製造方法 - Google Patents
半導体膜及び半導体膜の製造方法 Download PDFInfo
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- JP7357301B2 JP7357301B2 JP2021193935A JP2021193935A JP7357301B2 JP 7357301 B2 JP7357301 B2 JP 7357301B2 JP 2021193935 A JP2021193935 A JP 2021193935A JP 2021193935 A JP2021193935 A JP 2021193935A JP 7357301 B2 JP7357301 B2 JP 7357301B2
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- semiconductor film
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
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Description
図1に、本発明に係る成膜用霧化装置100を示す。成膜用霧化装置100は、原料溶液114を収容する原料容器111と、原料容器111の内部と外部を空間的に接続し、且つその下端が原料容器111内において原料溶液114の液面に触れないように設置された筒状部材113と、超音波を照射する超音波発生源(超音波振動板)121を一つ以上有する超音波発生器120と、超音波を原料溶液114に中間液123を介して伝播させる液槽122とを具備する。
本発明は、さらに図1および図2で説明した成膜用霧化装置を用いた成膜装置を提供する。
本発明に係る半導体膜は、Gaを含みコランダム型結晶構造を有する半導体膜であり、半導体膜の表面における直径0.3μm以上のパーティクル密度が50個/cm2以下のものである。直径0.3μm以上のパーティクルは、半導体膜をもとに半導体装置としたときに、特性に大きな影響を与えるものである。上記のような、直径0.3μm以上のパーティクル密度を有する半導体膜は、半導体装置製造に適した高品質なものとなる。
図1および図2に示した成膜用霧化装置と、図3に示した成膜装置を用いて、α-酸化ガリウムの成膜を行った。
窒素ガス流量を10L/minとした以外は実施例1と同様に成膜を行った。
成膜装置に図4で示した成膜装置を用いた他は、実施例1と同様の装置および原料溶液を使用してα-酸化ガリウムの成膜を行った。ミスト吐出ノズルには石英製のものを使用した。サセプターにはアルミ製ホットプレートを使用し、基板を450℃に加熱した。次にサセプターを10mm/sの速度でミスト吐出ノズルの下を水平方向に往復駆動させ、さらにミスト吐出ノズルからサセプター上の基板へ混合気を5L/min供給して60分間成膜を行った。
超音波を、筒状部材の筒内に向けて超音波発生器から直上に照射した他は、実施例1と同様に成膜を行った。
超音波を、筒状部材の筒内に向けて超音波発生器から直上に照射した以外は実施例2と同様に成膜を行った。
成膜時間、すなわち、成膜室にミストと窒素ガスの混合気を供給する時間を120分間としたこと以外は実施例1と同じ条件で成膜を行い、膜厚1μm以上の半導体膜の成膜を行った。そして、成膜して得た膜の表面のパーティクル(直径0.3μm以上)密度を、基板検査機(KLA candela-CS10)で評価した。
成膜時間を120分間としたこと以外は実施例2と同条件で成膜し、実施例4と同条件で評価を行った。
成膜時間を120分間としたこと以外は実施例3と同条件で成膜し、実施例4と同条件で評価を行った。
成膜時間を120分間としたこと以外は比較例1と同条件で成膜し、実施例4と同条件で評価を行った。
成膜時間を120分間としたこと以外は比較例2と同条件で成膜し、実施例4と同条件で評価を行った。
113…筒状部材、 114…原料溶液、 120…超音波発生器、
121…超音波発生源、 121a…角度調節機構、 122…液槽、
123…中間液、 131…キャリアガス、 132…ミスト、 133…混合気、
201…原料溶液、 202…液柱、 210…原料容器、 220…筒状部材、
300…成膜装置、 311…キャリアガス供給部、 313、324…配管、
320…成膜用霧化装置(霧化手段)、 321…原料溶液、 322…ミスト、
330…成膜手段、 331…成膜室、 332…サセプター、 333…加熱手段、
334…基体、 340…排気手段、 351…キャリアガス、 352…混合気、
400…成膜装置、 422…ミスト、 430…成膜手段、 431…ノズル、
432…サセプター、 433…加熱手段、 434…基体、 435…排気手段、
452…混合気。
Claims (12)
- Gaを含みコランダム型結晶構造を有する半導体膜であって、
前記半導体膜の表面における直径0.3μm以上のパーティクル密度が50個/cm2以下であることを特徴とする半導体膜。 - 前記半導体膜の表面における直径0.3μm以上のパーティクル密度が1個/cm 2 未満であることを特徴とする請求項1に記載の半導体膜。
- 前記Gaを含みコランダム型結晶構造を有する半導体膜がα-Ga2O3であることを特徴とする請求項1又は2に記載の半導体膜。
- 前記半導体膜の表面積が50cm2以上であることを特徴とする請求項1から3のいずれか一項に記載の半導体膜。
- 前記半導体膜の膜厚が1μm以上であることを特徴とする請求項1から4のいずれか一項に記載の半導体膜。
- Gaを含みコランダム型結晶構造を有する半導体膜であって、
前記半導体膜の表面における直径0.5μm以上のパーティクル密度が10個/cm2以下であることを特徴とする半導体膜。 - 前記半導体膜の表面における直径0.3μm以上のパーティクル密度が50個/cm2以下であることを特徴とする請求項6に記載の半導体膜。
- 前記Gaを含みコランダム型結晶構造を有する半導体膜がα-Ga2O3であることを特徴とする請求項6又は7に記載の半導体膜。
- 前記半導体膜の表面積が50cm2以上であることを特徴とする請求項6から8のいずれか一項に記載の半導体膜。
- 前記半導体膜の膜厚が1μm以上であることを特徴とする請求項6から9のいずれか一項に記載の半導体膜。
- 成膜用霧化装置で霧化した原料溶液のミストを成膜室に搬送して加熱した基体上にGaを含みコランダム型結晶構造を有する半導体膜を成膜する半導体膜の製造方法であって、
前記成膜用霧化装置として、前記原料溶液を収容する原料容器と、前記原料容器の内部と外部を空間的に接続し、且つその下端が前記原料容器内において前記原料溶液の液面に触れないように設置された筒状部材と、超音波を照射する超音波発生源を一つ以上有する超音波発生器と、前記超音波を前記原料溶液に中間液を介して伝播させる液槽とを有する成膜用霧化装置を用い、
前記超音波発生源の超音波射出面の中心線をuとし、
前記中心線uと、前記筒状部材の側壁面の延長を含む、前記筒状部材の側壁面がなす面との交点Pが、前記筒状部材の下端点Bより下になるように超音波発生源を設けて前記原料溶液の霧化を行い、
前記半導体膜の成長速度を13.5nm/min以上とし、
前記半導体膜の表面における直径0.3μm以上のパーティクル密度が50個/cm2以下である半導体膜を成膜することを特徴とする半導体膜の製造方法。 - 前記半導体膜の表面における直径0.5μm以上のパーティクル密度が10個/cm2以下である半導体膜を成膜することを特徴とする請求項11に記載の半導体膜の製造方法。
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Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027329A (ja) | 2005-07-14 | 2007-02-01 | Tohoku Univ | 多層構造体及びその洗浄方法 |
US20120045661A1 (en) | 2010-08-19 | 2012-02-23 | Raveen Kumaran | Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods |
JP2014031300A (ja) | 2012-08-06 | 2014-02-20 | Namiki Precision Jewel Co Ltd | 酸化ガリウム基板及びその製造方法 |
JP2017005148A (ja) | 2015-06-11 | 2017-01-05 | 株式会社Flosfia | 半導体膜、積層構造体および半導体装置 |
JP2017069424A5 (ja) | 2015-09-30 | 2018-11-22 | ||
JP2020002396A (ja) | 2018-06-26 | 2020-01-09 | 信越化学工業株式会社 | 成膜装置及び成膜方法 |
JP2020188170A (ja) | 2019-05-15 | 2020-11-19 | トヨタ自動車株式会社 | ミスト生成装置及び成膜装置 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5811410Y2 (ja) * | 1977-10-06 | 1983-03-03 | ティーディーケイ株式会社 | 超音波液体霧化装置 |
JPS5665668A (en) * | 1979-11-01 | 1981-06-03 | Osaka Gas Co Ltd | Inner surface treatment of pipe |
FR2531880A1 (fr) * | 1982-08-18 | 1984-02-24 | Commissariat Energie Atomique | Procede de fabrication de couches minces |
JPH0615757U (ja) * | 1992-07-23 | 1994-03-01 | ティーディーケイ株式会社 | 超音波霧化器 |
JPH08330303A (ja) * | 1995-05-30 | 1996-12-13 | Mitsubishi Electric Corp | 薄膜形成方法および薄膜形成装置 |
JP2001217253A (ja) * | 2000-01-31 | 2001-08-10 | Shin Etsu Handotai Co Ltd | Soiウェーハ及び半導体単結晶ウェーハ並びにそれらの製造方法 |
WO2004068556A2 (en) * | 2003-01-27 | 2004-08-12 | Amberwave Systems Corporation | Semiconductor structures with structural homogeneity |
JP4672996B2 (ja) * | 2004-04-19 | 2011-04-20 | 静雄 藤田 | 成膜用霧化装置 |
JP2008100204A (ja) * | 2005-12-06 | 2008-05-01 | Akira Tomono | 霧発生装置 |
JP4990707B2 (ja) * | 2007-07-24 | 2012-08-01 | パナソニック株式会社 | 超音波霧発生装置 |
JP5460302B2 (ja) | 2009-12-24 | 2014-04-02 | 一般財団法人川村理化学研究所 | 有機無機複合体分散液の製造方法 |
JP5665668B2 (ja) | 2011-06-27 | 2015-02-04 | 三和シヤッター工業株式会社 | ガラリ羽根及び当該ガラリ羽根とガラリ竪枠との連結構造 |
JP5793732B2 (ja) | 2011-07-27 | 2015-10-14 | 高知県公立大学法人 | ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法 |
JP6137668B2 (ja) | 2012-08-26 | 2017-05-31 | 国立大学法人 熊本大学 | 酸化亜鉛結晶層の製造方法及びミスト化学気相成長装置 |
JP6049067B2 (ja) * | 2012-12-27 | 2016-12-21 | 株式会社日本マイクロニクス | 配線形成装置、メンテナンス方法および配線形成方法 |
JP6158336B2 (ja) * | 2013-08-08 | 2017-07-05 | 東芝三菱電機産業システム株式会社 | 霧化装置 |
US10090388B2 (en) * | 2014-03-31 | 2018-10-02 | Flosfia Inc. | Crystalline multilayer structure and semiconductor device |
JP5955368B2 (ja) | 2014-10-22 | 2016-07-20 | カンボウプラス株式会社 | 浸水防止堰 |
JP6945121B2 (ja) * | 2015-09-30 | 2021-10-06 | 株式会社Flosfia | 結晶性半導体膜および半導体装置 |
US10804362B2 (en) * | 2016-08-31 | 2020-10-13 | Flosfia Inc. | Crystalline oxide semiconductor film, crystalline oxide semiconductor device, and crystalline oxide semiconductor system |
US20180097073A1 (en) * | 2016-10-03 | 2018-04-05 | Flosfia Inc. | Semiconductor device and semiconductor system including semiconductor device |
JP6793942B2 (ja) * | 2016-11-01 | 2020-12-02 | 国立大学法人 和歌山大学 | 酸化ガリウムの製造方法及び結晶成長装置 |
JP6870798B2 (ja) * | 2016-11-28 | 2021-05-12 | 株式会社Flosfia | 成膜装置および成膜方法 |
JP6975417B2 (ja) * | 2020-02-27 | 2021-12-01 | 信越化学工業株式会社 | 成膜用霧化装置およびこれを用いた成膜装置 |
-
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Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007027329A (ja) | 2005-07-14 | 2007-02-01 | Tohoku Univ | 多層構造体及びその洗浄方法 |
US20120045661A1 (en) | 2010-08-19 | 2012-02-23 | Raveen Kumaran | Rare-earth-doped aluminum-gallium-oxide films in the corundum-phase and related methods |
JP2014031300A (ja) | 2012-08-06 | 2014-02-20 | Namiki Precision Jewel Co Ltd | 酸化ガリウム基板及びその製造方法 |
JP2017005148A (ja) | 2015-06-11 | 2017-01-05 | 株式会社Flosfia | 半導体膜、積層構造体および半導体装置 |
JP2017069424A5 (ja) | 2015-09-30 | 2018-11-22 | ||
JP2020002396A (ja) | 2018-06-26 | 2020-01-09 | 信越化学工業株式会社 | 成膜装置及び成膜方法 |
JP2020188170A (ja) | 2019-05-15 | 2020-11-19 | トヨタ自動車株式会社 | ミスト生成装置及び成膜装置 |
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CN115210002B (zh) | 2024-05-14 |
TW202200832A (zh) | 2022-01-01 |
EP4112184A1 (en) | 2023-01-04 |
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WO2021172152A1 (ja) | 2021-09-02 |
JP2021136445A (ja) | 2021-09-13 |
US20220411926A1 (en) | 2022-12-29 |
JP2022037942A (ja) | 2022-03-09 |
CN117816456A (zh) | 2024-04-05 |
KR20220143045A (ko) | 2022-10-24 |
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