JP7319502B2 - 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置 - Google Patents

炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置 Download PDF

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JP7319502B2
JP7319502B2 JP2020002078A JP2020002078A JP7319502B2 JP 7319502 B2 JP7319502 B2 JP 7319502B2 JP 2020002078 A JP2020002078 A JP 2020002078A JP 2020002078 A JP2020002078 A JP 2020002078A JP 7319502 B2 JP7319502 B2 JP 7319502B2
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substrate
layer
silicon carbide
manufacturing
plane
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譲司 西尾
千春 太田
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Toshiba Corp
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Toshiba Corp
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JP2020002078A 2020-01-09 2020-01-09 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置 Active JP7319502B2 (ja)

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JP2020002078A JP7319502B2 (ja) 2020-01-09 2020-01-09 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置
US17/004,264 US11443946B2 (en) 2020-01-09 2020-08-27 Method for manufacturing silicon carbide base body, method for manufacturing semiconductor device, silicon carbide base body, and semiconductor device
CN202010905516.6A CN113113293B (zh) 2020-01-09 2020-09-01 碳化硅基体的制造方法、半导体装置的制造方法、碳化硅基体和半导体装置

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JP2020002078A JP7319502B2 (ja) 2020-01-09 2020-01-09 炭化珪素基体の製造方法、半導体装置の製造方法、炭化珪素基体、及び、半導体装置

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JP2021109800A5 JP2021109800A5 (https=) 2022-04-15
JP7319502B2 true JP7319502B2 (ja) 2023-08-02

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JP2014166937A (ja) 2013-01-31 2014-09-11 Central Research Institute Of Electric Power Industry 六方晶単結晶の製造方法、六方晶単結晶ウエハの製造方法、六方晶単結晶ウエハ、六方晶単結晶素子

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JP5070691B2 (ja) * 2005-10-03 2012-11-14 住友電気工業株式会社 炭化珪素基板および縦型半導体装置
JP4857697B2 (ja) 2005-10-05 2012-01-18 トヨタ自動車株式会社 炭化珪素半導体装置
JP5022136B2 (ja) * 2007-08-06 2012-09-12 三洋電機株式会社 半導体素子の製造方法および半導体素子
JP4798119B2 (ja) * 2007-11-06 2011-10-19 株式会社デンソー 炭化珪素半導体装置およびその製造方法
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