JP7289267B2 - 半導体処理中のマイクロ波空洞における均一の熱分布のための方法および装置 - Google Patents

半導体処理中のマイクロ波空洞における均一の熱分布のための方法および装置 Download PDF

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JP7289267B2
JP7289267B2 JP2019560260A JP2019560260A JP7289267B2 JP 7289267 B2 JP7289267 B2 JP 7289267B2 JP 2019560260 A JP2019560260 A JP 2019560260A JP 2019560260 A JP2019560260 A JP 2019560260A JP 7289267 B2 JP7289267 B2 JP 7289267B2
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microwave
cavity
phase shifter
controller
signals
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JP2020521275A (ja
JP2020521275A5 (enExample
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プリータム ラオ
デニス イワノフ
アナンスクリシュナ ジュプディ
ユー シェン オウ
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Applied Materials Inc
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Applied Materials Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/6402—Aspects relating to the microwave cavity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H05B6/664—Aspects related to the power supply of the microwave heating apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/705—Feed lines using microwave tuning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/707—Feed lines using waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Clinical Laboratory Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2019560260A 2017-05-03 2018-05-03 半導体処理中のマイクロ波空洞における均一の熱分布のための方法および装置 Active JP7289267B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762500609P 2017-05-03 2017-05-03
US62/500,609 2017-05-03
US15/966,211 US20180323091A1 (en) 2017-05-03 2018-04-30 Method and apparatus for uniform thermal distribution in a microwave cavity during semiconductor processing
US15/966,211 2018-04-30
PCT/US2018/030787 WO2018204576A1 (en) 2017-05-03 2018-05-03 Method and apparatus for uniform thermal distribution in a microwave cavity during semiconductor processing

Publications (3)

Publication Number Publication Date
JP2020521275A JP2020521275A (ja) 2020-07-16
JP2020521275A5 JP2020521275A5 (enExample) 2021-05-27
JP7289267B2 true JP7289267B2 (ja) 2023-06-09

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US (1) US20180323091A1 (enExample)
JP (1) JP7289267B2 (enExample)
KR (1) KR102540168B1 (enExample)
CN (1) CN110663108B (enExample)
TW (1) TWI773753B (enExample)
WO (1) WO2018204576A1 (enExample)

Families Citing this family (7)

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Publication number Priority date Publication date Assignee Title
CN112235003B (zh) * 2020-10-13 2022-01-14 大连海事大学 一种用于改变场分布的双路宽带信号装置
TWI834016B (zh) 2020-12-16 2024-03-01 財團法人工業技術研究院 頻率可重組相位陣列系統及其執行的材料處理方法
TWI820537B (zh) * 2021-04-26 2023-11-01 財團法人工業技術研究院 微波加熱方法與微波加熱裝置
TWI786015B (zh) * 2022-04-22 2022-12-01 宏碩系統股份有限公司 單源微波加熱裝置
DE102022127931A1 (de) * 2022-10-21 2024-05-02 TRUMPF Hüttinger GmbH + Co. KG Werkstückbehandlungsvorrichtung zur Behandlung eines Werkstücks mit einer Mikrowelle und Verfahren zur Behandlung des Werkstücks mit der Mikrowelle
JP2024099858A (ja) * 2023-01-13 2024-07-26 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法およびプログラム
US20250027202A1 (en) * 2023-07-21 2025-01-23 Applied Materials, Inc. Methods of adjusting uniformity, and related apparatus and systems, for semiconductor manufacturing

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060016A (ja) 2006-09-04 2008-03-13 Matsushita Electric Ind Co Ltd マイクロ波利用装置
JP2010073383A (ja) 2008-09-17 2010-04-02 Panasonic Corp マイクロ波加熱装置
WO2011114711A1 (ja) 2010-03-19 2011-09-22 パナソニック株式会社 マイクロ波加熱装置
US20140042152A1 (en) 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
US20150156827A1 (en) 2012-07-02 2015-06-04 Goji Limited Rf energy application based on electromagnetic feedback

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1053760A (en) * 1976-12-30 1979-05-01 Thomas E. Hester Power controller for microwave magnetron
JPS5830687B2 (ja) * 1977-03-16 1983-06-30 松下電器産業株式会社 調理器
JP3957135B2 (ja) * 2000-10-13 2007-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP3839395B2 (ja) * 2002-11-22 2006-11-01 株式会社エーイーティー マイクロ波プラズマ発生装置
JP5064924B2 (ja) * 2006-08-08 2012-10-31 パナソニック株式会社 マイクロ波処理装置
JP5167678B2 (ja) * 2007-04-16 2013-03-21 パナソニック株式会社 マイクロ波処理装置
KR101224520B1 (ko) * 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
CN103533690A (zh) * 2012-07-05 2014-01-22 Nxp股份有限公司 自动调整工作频率的微波功率源和方法
JP2014032744A (ja) * 2012-08-01 2014-02-20 Panasonic Corp マイクロ波加熱装置
WO2015180416A1 (zh) * 2014-05-28 2015-12-03 广东美的厨房电器制造有限公司 半导体微波炉及其半导体微波源
CN105120549B (zh) * 2015-09-02 2018-05-01 广东美的厨房电器制造有限公司 微波加热系统及其半导体功率源和加热控制方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060016A (ja) 2006-09-04 2008-03-13 Matsushita Electric Ind Co Ltd マイクロ波利用装置
JP2010073383A (ja) 2008-09-17 2010-04-02 Panasonic Corp マイクロ波加熱装置
WO2011114711A1 (ja) 2010-03-19 2011-09-22 パナソニック株式会社 マイクロ波加熱装置
US20150156827A1 (en) 2012-07-02 2015-06-04 Goji Limited Rf energy application based on electromagnetic feedback
US20140042152A1 (en) 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage

Also Published As

Publication number Publication date
KR102540168B1 (ko) 2023-06-02
WO2018204576A1 (en) 2018-11-08
TW201907506A (zh) 2019-02-16
US20180323091A1 (en) 2018-11-08
CN110663108B (zh) 2024-03-12
JP2020521275A (ja) 2020-07-16
CN110663108A (zh) 2020-01-07
TWI773753B (zh) 2022-08-11
KR20190138317A (ko) 2019-12-12

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