KR102540168B1 - 반도체 프로세싱 동안의 마이크로파 공동 내의 균일한 열 분포를 위한 방법 및 장치 - Google Patents

반도체 프로세싱 동안의 마이크로파 공동 내의 균일한 열 분포를 위한 방법 및 장치 Download PDF

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KR102540168B1
KR102540168B1 KR1020197035666A KR20197035666A KR102540168B1 KR 102540168 B1 KR102540168 B1 KR 102540168B1 KR 1020197035666 A KR1020197035666 A KR 1020197035666A KR 20197035666 A KR20197035666 A KR 20197035666A KR 102540168 B1 KR102540168 B1 KR 102540168B1
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microwave
cavity
phase shifter
signals
controller
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KR20190138317A (ko
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프리담 라오
데니스 이바노프
아난트크리슈나 주푸디
유에 쉥 오우
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어플라이드 머티어리얼스, 인코포레이티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/6402—Aspects relating to the microwave cavity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/66—Circuits
    • H05B6/664—Aspects related to the power supply of the microwave heating apparatus
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/705—Feed lines using microwave tuning
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/70—Feed lines
    • H05B6/707—Feed lines using waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00—Heating by electric, magnetic or electromagnetic fields
    • H05B6/64—Heating using microwaves
    • H05B6/80—Apparatus for specific applications
    • H05B6/806—Apparatus for specific applications for laboratory use

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Clinical Laboratory Science (AREA)
  • General Health & Medical Sciences (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020197035666A 2017-05-03 2018-05-03 반도체 프로세싱 동안의 마이크로파 공동 내의 균일한 열 분포를 위한 방법 및 장치 Active KR102540168B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762500609P 2017-05-03 2017-05-03
US62/500,609 2017-05-03
US15/966,211 US20180323091A1 (en) 2017-05-03 2018-04-30 Method and apparatus for uniform thermal distribution in a microwave cavity during semiconductor processing
US15/966,211 2018-04-30
PCT/US2018/030787 WO2018204576A1 (en) 2017-05-03 2018-05-03 Method and apparatus for uniform thermal distribution in a microwave cavity during semiconductor processing

Publications (2)

Publication Number Publication Date
KR20190138317A KR20190138317A (ko) 2019-12-12
KR102540168B1 true KR102540168B1 (ko) 2023-06-02

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US (1) US20180323091A1 (enExample)
JP (1) JP7289267B2 (enExample)
KR (1) KR102540168B1 (enExample)
CN (1) CN110663108B (enExample)
TW (1) TWI773753B (enExample)
WO (1) WO2018204576A1 (enExample)

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CN112235003B (zh) * 2020-10-13 2022-01-14 大连海事大学 一种用于改变场分布的双路宽带信号装置
TWI834016B (zh) 2020-12-16 2024-03-01 財團法人工業技術研究院 頻率可重組相位陣列系統及其執行的材料處理方法
TWI820537B (zh) * 2021-04-26 2023-11-01 財團法人工業技術研究院 微波加熱方法與微波加熱裝置
TWI786015B (zh) * 2022-04-22 2022-12-01 宏碩系統股份有限公司 單源微波加熱裝置
DE102022127931A1 (de) * 2022-10-21 2024-05-02 TRUMPF Hüttinger GmbH + Co. KG Werkstückbehandlungsvorrichtung zur Behandlung eines Werkstücks mit einer Mikrowelle und Verfahren zur Behandlung des Werkstücks mit der Mikrowelle
JP2024099858A (ja) * 2023-01-13 2024-07-26 株式会社Kokusai Electric 基板処理装置、基板処理方法、半導体装置の製造方法およびプログラム
US20250027202A1 (en) * 2023-07-21 2025-01-23 Applied Materials, Inc. Methods of adjusting uniformity, and related apparatus and systems, for semiconductor manufacturing

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JP2008060016A (ja) * 2006-09-04 2008-03-13 Matsushita Electric Ind Co Ltd マイクロ波利用装置
JP2010073383A (ja) * 2008-09-17 2010-04-02 Panasonic Corp マイクロ波加熱装置
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage
JP5830687B2 (ja) * 2010-03-19 2015-12-09 パナソニックＩｐマネジメント株式会社 マイクロ波加熱装置

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CA1053760A (en) * 1976-12-30 1979-05-01 Thomas E. Hester Power controller for microwave magnetron
JPS5830687B2 (ja) * 1977-03-16 1983-06-30 松下電器産業株式会社 調理器
JP3957135B2 (ja) * 2000-10-13 2007-08-15 東京エレクトロン株式会社 プラズマ処理装置
JP3839395B2 (ja) * 2002-11-22 2006-11-01 株式会社エーイーティー マイクロ波プラズマ発生装置
JP5064924B2 (ja) * 2006-08-08 2012-10-31 パナソニック株式会社 マイクロ波処理装置
JP5167678B2 (ja) * 2007-04-16 2013-03-21 パナソニック株式会社 マイクロ波処理装置
KR101224520B1 (ko) * 2012-06-27 2013-01-22 (주)이노시티 프로세스 챔버
US10470255B2 (en) * 2012-07-02 2019-11-05 Goji Limited RF energy application based on electromagnetic feedback
CN103533690A (zh) * 2012-07-05 2014-01-22 Nxp股份有限公司 自动调整工作频率的微波功率源和方法
JP2014032744A (ja) * 2012-08-01 2014-02-20 Panasonic Corp マイクロ波加熱装置
WO2015180416A1 (zh) * 2014-05-28 2015-12-03 广东美的厨房电器制造有限公司 半导体微波炉及其半导体微波源
CN105120549B (zh) * 2015-09-02 2018-05-01 广东美的厨房电器制造有限公司 微波加热系统及其半导体功率源和加热控制方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008060016A (ja) * 2006-09-04 2008-03-13 Matsushita Electric Ind Co Ltd マイクロ波利用装置
JP2010073383A (ja) * 2008-09-17 2010-04-02 Panasonic Corp マイクロ波加熱装置
JP5830687B2 (ja) * 2010-03-19 2015-12-09 パナソニックＩｐマネジメント株式会社 マイクロ波加熱装置
US20140042152A1 (en) * 2012-08-08 2014-02-13 Taiwan Semiconductor Manufacturing Company, Ltd. Variable frequency microwave device and method for rectifying wafer warpage

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Publication number Publication date
WO2018204576A1 (en) 2018-11-08
TW201907506A (zh) 2019-02-16
US20180323091A1 (en) 2018-11-08
CN110663108B (zh) 2024-03-12
JP2020521275A (ja) 2020-07-16
CN110663108A (zh) 2020-01-07
JP7289267B2 (ja) 2023-06-09
TWI773753B (zh) 2022-08-11
KR20190138317A (ko) 2019-12-12

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