JP7282688B2 - 金属層を有する層状構造を備えたフレキシブル部品 - Google Patents

金属層を有する層状構造を備えたフレキシブル部品 Download PDF

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JP7282688B2
JP7282688B2 JP2019561901A JP2019561901A JP7282688B2 JP 7282688 B2 JP7282688 B2 JP 7282688B2 JP 2019561901 A JP2019561901 A JP 2019561901A JP 2019561901 A JP2019561901 A JP 2019561901A JP 7282688 B2 JP7282688 B2 JP 7282688B2
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layer
flexible
coated substrate
mox
layers
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JPWO2018204944A5 (enrdf_load_stackoverflow
JP2020522728A (ja
JP2020522728A5 (enrdf_load_stackoverflow
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ケステンバウアー，ハラルト
ウィンクラー，イェルク
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Plansee SE
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C23C14/20—Metallic material, boron or silicon on organic substrates
    • C23C14/205—Metallic material, boron or silicon on organic substrates by cathodic sputtering
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C24/00—Coating starting from inorganic powder
    • C23C24/02—Coating starting from inorganic powder by application of pressure only
    • C23C24/04—Impact or kinetic deposition of particles
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    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C23C28/345—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates with at least one oxide layer
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
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    • H10D30/67—Thin-film transistors [TFT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
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    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
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    • B22—CASTING; POWDER METALLURGY
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
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    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
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    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
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    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
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CN112582479A (zh) * 2020-12-30 2021-03-30 福建华佳彩有限公司 一种顶栅结构的薄膜晶体管及制作方法
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Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324874A (ja) 2001-04-25 2002-11-08 Kyocera Corp 配線基板
JP2002353353A (ja) 2001-05-22 2002-12-06 Kyocera Corp 半導体素子収納用パッケージ
WO2004038049A1 (ja) 2002-10-28 2004-05-06 A.L.M.T.Corp. 複合材料、その製造方法およびそれを用いた部材
JP2006221162A (ja) 2005-02-07 2006-08-24 Samsung Electronics Co Ltd 表示装置用配線、薄膜トランジスタ表示板及びその製造方法
JP2014199920A (ja) 2013-03-12 2014-10-23 日立金属株式会社 電子部品用金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
JP2014529006A (ja) 2012-01-12 2014-10-30 宝鶏市科廸普有色金属加工有限公司 モリブデン・ニオブ合金板ターゲット材の加工方法
WO2015029286A1 (ja) 2013-08-27 2015-03-05 パナソニック株式会社 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板
JP2015119175A (ja) 2013-11-15 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP2016504495A (ja) 2012-11-29 2016-02-12 エーリコン・サーフェス・ソリューションズ・アーゲー・トリューバッハ 層表面の構造化方法およびそのための装置
US20160365368A1 (en) 2015-06-11 2016-12-15 Samsung Display Co., Ltd. Thin film transistor array panel
JP2016224429A (ja) 2015-05-29 2016-12-28 株式会社半導体エネルギー研究所 半導体装置、及び当該半導体装置を有する表示装置
JP2017503336A (ja) 2013-11-15 2017-01-26 エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ 低接触抵抗薄膜トランジスタ
JP2017028279A (ja) 2015-07-17 2017-02-02 株式会社半導体エネルギー研究所 半導体装置、照明装置、および車両

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002232142A (ja) * 2001-01-30 2002-08-16 Kyocera Corp 多層配線基板およびその製造方法
JP4496518B2 (ja) * 2002-08-19 2010-07-07 日立金属株式会社 薄膜配線
JP2007069561A (ja) * 2005-09-09 2007-03-22 Sumitomo Metal Mining Co Ltd ２層フレキシブル基板とその製造方法
HUE052503T2 (hu) * 2007-09-12 2021-05-28 Flisom Ag Berendezés kompozit film gyártására
KR101542840B1 (ko) * 2008-09-09 2015-08-07 삼성디스플레이 주식회사 박막 트랜지스터 표시판 및 이의 제조 방법
JP5874308B2 (ja) * 2011-10-21 2016-03-02 三菱瓦斯化学株式会社 銅及びモリブデンを含む多層膜用エッチング液
KR102194818B1 (ko) * 2013-08-06 2020-12-24 삼성디스플레이 주식회사 플렉서블 터치 표시 패널
CN103606389B (zh) * 2013-10-28 2016-11-16 中国科学院长春光学精密机械与物理研究所 高导电性无机、金属掺杂多层结构透明导电薄膜的制备方法
US9544994B2 (en) * 2014-08-30 2017-01-10 Lg Display Co., Ltd. Flexible display device with side crack protection structure and manufacturing method for the same
JP6706418B2 (ja) * 2015-03-20 2020-06-10 日立金属株式会社 電子部品用積層配線膜および被覆層形成用スパッタリングターゲット材
AT15048U1 (de) * 2015-11-27 2016-11-15 Plansee Se Beschichtetes flexibles Bauteil

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002324874A (ja) 2001-04-25 2002-11-08 Kyocera Corp 配線基板
JP2002353353A (ja) 2001-05-22 2002-12-06 Kyocera Corp 半導体素子収納用パッケージ
WO2004038049A1 (ja) 2002-10-28 2004-05-06 A.L.M.T.Corp. 複合材料、その製造方法およびそれを用いた部材
JP2006221162A (ja) 2005-02-07 2006-08-24 Samsung Electronics Co Ltd 表示装置用配線、薄膜トランジスタ表示板及びその製造方法
JP2014529006A (ja) 2012-01-12 2014-10-30 宝鶏市科廸普有色金属加工有限公司 モリブデン・ニオブ合金板ターゲット材の加工方法
JP2016504495A (ja) 2012-11-29 2016-02-12 エーリコン・サーフェス・ソリューションズ・アーゲー・トリューバッハ 層表面の構造化方法およびそのための装置
JP2014199920A (ja) 2013-03-12 2014-10-23 日立金属株式会社 電子部品用金属薄膜および金属薄膜形成用Ｍｏ合金スパッタリングターゲット材
WO2015029286A1 (ja) 2013-08-27 2015-03-05 パナソニック株式会社 薄膜トランジスタ基板の製造方法及び薄膜トランジスタ基板
JP2015119175A (ja) 2013-11-15 2015-06-25 株式会社半導体エネルギー研究所 半導体装置及び表示装置
JP2017503336A (ja) 2013-11-15 2017-01-26 エボニック デグサ ゲーエムベーハーＥｖｏｎｉｋ Ｄｅｇｕｓｓａ ＧｍｂＨ 低接触抵抗薄膜トランジスタ
JP2016224429A (ja) 2015-05-29 2016-12-28 株式会社半導体エネルギー研究所 半導体装置、及び当該半導体装置を有する表示装置
US20160365368A1 (en) 2015-06-11 2016-12-15 Samsung Display Co., Ltd. Thin film transistor array panel
JP2017028279A (ja) 2015-07-17 2017-02-02 株式会社半導体エネルギー研究所 半導体装置、照明装置、および車両

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