WO2004038049A1 - 複合材料、その製造方法およびそれを用いた部材 - Google Patents
複合材料、その製造方法およびそれを用いた部材 Download PDFInfo
- Publication number
- WO2004038049A1 WO2004038049A1 PCT/JP2003/013779 JP0313779W WO2004038049A1 WO 2004038049 A1 WO2004038049 A1 WO 2004038049A1 JP 0313779 W JP0313779 W JP 0313779W WO 2004038049 A1 WO2004038049 A1 WO 2004038049A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- copper
- composite material
- phase
- weight
- same
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C9/00—Alloys based on copper
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/045—Alloys based on refractory metals
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C27/00—Alloys based on rhenium or a refractory metal not mentioned in groups C22C14/00 or C22C16/00
- C22C27/04—Alloys based on tungsten or molybdenum
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12014—All metal or with adjacent metals having metal particles
- Y10T428/12028—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12528—Semiconductor component
Definitions
- the present invention relates to a Mo—Cu-based composite material and a member using the same.
- Mo_Cu-based materials are usually composite materials in which both components are mixed and bonded. Therefore, this material is a functional material that combines the functions of Mo and Cu, and it is possible to provide members with various functions and functional levels depending on the content ratio of both components and the micro or macro layout design. .
- This material can be broadly classified into two types: one in which Mo and Cu particles and the like are distributed almost uniformly in a microscopic manner (Type 1), one in which Mo and Cu are macroscopically bonded (Type 2), and both. Combinations and intermediate arrangements (type 3).
- Type 1 is a narrowly defined Mo—Cu composite material.
- type 2 has a structure in which Cu and Mo are laminated, such as CMC (registered trademark) in which these plates are bonded in the order of Cu, Mo, and Cu, and a macro in which Mo and Cu are added. Includes those that are unevenly distributed.
- Type 3 is a mixture of both types.
- Mo_Cu sintered alloy and “Mo—Cu alloy phase” in the specification of Japanese Patent Application No. 2002-312130, which is the basis of the present application, are based on the original microstructure described above. In the application, the terms are replaced by synonyms of "Mo-Cu based composite material” and “Mo-Cu based composite phase”, respectively.
- this material has been mainly used for heat dissipating members of electric and electronic equipment, especially for semiconductor devices.
- this material since this material has the above-described functions, it can utilize the advantageous properties of Mo and Cu, suppress those disadvantageous properties, and complement each other. Therefore, many uses can be made depending on the material design. For example, if the rigidity of Mo and the ductility of Cu are used, Mo Use the radiation properties of Cu for special radiation equipment components, and use the heat resistance of M0 and the electrical conductivity of Cu to use heat-resistant electrical and electronic parts, such as electrical contacts and electrodes for electrical discharge machining and welding. If the chemical properties of Mo and Cu are used for the material, it can be considered to be used for the members of the siding.
- Reference 1 discloses a non-rolled type 1 non-rolled material, especially Mo-Cu based composite materials suitable for mounting semiconductor elements.
- Reference Document 2 discloses a type 1 rolled material.
- Reference Document 3 discloses a type 1 rolled material.
- Reference 4 is Mo, Cu, and Mo, and the type 2 layered in the order of Mo is disclosed in Japanese Patent Application Laid-Open No. H10-12767 (hereinafter referred to as Reference 5).
- Reference 5 A type 2 layered in order and a type 3 layered with a Mo-Cu composite material layer are disclosed.
- materials for this application include not only high thermal conductivity in practical use, but also semiconductor devices in practical use and in the vicinity of their mounting parts (hereinafter referred to as “enclosure materials”). Matching of the coefficients of thermal expansion is mainly required. In the future, the thermal load on the components mounted on the package will increase rapidly due to the rapid increase in the degree of integration of semiconductor devices, the miniaturization of large-capacity packages, and the increase in the capacity of rectifiers in electrical equipment. It seems to be. Therefore, these heat dissipating members are required to have even higher thermal conductivity. For example, as in the case where the semiconductor element is Si and the surrounding material is A 1 N, the thermal expansion coefficient is small and the deviation is small and close to Mo. It is difficult to match the thermal expansion coefficient with the thermal conductivity while increasing the thermal conductivity only by the ratio.
- Reference 1 discloses a material in which Mo and Cu are microscopically and almost uniformly distributed in a three-dimensional direction, and the entirety is a Mo—Cu-based composite phase.
- a material obtained by plastically processing this material Fees are disclosed in reference 2.
- the plastically processed material has the same thermal conductivity as that of Reference 1 with the same Cu amount.
- thermal expansion coefficient is a reduced approximately 1 X 1 0- 6 / ° C .
- it is considered that the same thermal conductivity as that of Reference 1 is obtained in the plastic working direction, and it is thought that the thermal conductivity slightly decreases in the thickness direction.
- Reference 3 discloses a material in which Mo and Cu are microscopically and almost uniformly distributed in a three-dimensional direction, and the entirety is a Mo—Cu-based composite phase.
- a material obtained by plastically processing this material Fees are disclosed in reference 2.
- thermal expansion coefficient is a reduced approximately 1 X 1 0- 6 / ° C .
- both the thermal conductivity and the thermal expansion coefficient increase in proportion to the amount of Cu. Therefore, there is a limit in increasing the thermal conductivity while suppressing the thermal expansion coefficient.
- the thermal characteristics also have a direction, so it is necessary to proceed with material design based on this.
- a first object of the present invention is to provide a composite material of type 1 and type 2 which can achieve high thermal conductivity and a matching coefficient of thermal expansion with an envelope material. .
- a second object of the present invention is to provide a composite material in a heat radiation member in which heat radiation characteristics after plastic working are considered.
- a third object of the present invention is to provide a semiconductor element having high thermal integration with Si and GaAs as well as various package materials, particularly alumina and A1N, and to achieve high integration. It is another object of the present invention to provide a low-cost composite material having a high thermal conductivity that can cope with a light weight dangling.
- a fourth object of the present invention is to provide a heat dissipation member using the composite material.
- a fifth object of the present invention is to provide a method for producing the composite material.
- a sixth object of the present invention is to provide a semiconductor device in which the heat radiating member is used for heat radiation of a semiconductor device, for example, a heat radiating substrate. Disclosure of the invention
- a composite material according to the present invention is a Mo_Cu-based composite material having a Cu content of 30 to 70% by weight, and a copper pool phase and a Mo—Cu component in the material. And a copper pool phase in an amount of 10 to 50% by weight.
- the copper pool phase preferably has an average minor axis of 50 to 200 im, and is preferably subjected to plastic working.
- the member and the heat radiating member of the present invention use any one of the above composite materials.
- a semiconductor device according to the present invention is characterized in that the heat dissipation member is used.
- the method for producing a composite material of the present invention is characterized in that a copper-based material having an average minor axis of 50 ⁇ m or more is arranged in a Mo powder matrix, and the molded body is integrated and formed into a molded body. Baking the body into an intermediate sintered body, infiltrating the compact or intermediate sintered body with copper or a copper alloy, the Cu content is 30 to 70% by weight, and the copper pool phase is 10%. ⁇ 50 weight. / 0 is a composite material.
- the copper-based material is a powder having an average minor axis of 50 to 200 ⁇ m, and the powder is mixed with the Mo powder before the molding integral. It is preferable to do so.
- FIG. 1 (a) is a diagram schematically showing the metal structure at the time when the copper-based material of the composite material of the present invention is formed and integrated after placing the copper-based material;
- Fig. 1 (b) is a diagram schematically showing the metal structure at the time when the pool phase was formed after copper infiltration of the composite material of Fig. 1 (a);
- FIG. 2 is a diagram schematically showing the metal structure at the time of plastic working shown in FIG. 1 (b);
- FIG. 3 is an optical micrograph showing an example of the metal structure of the composite material of the present invention;
- FIG. 4 is a diagram showing the relationship between the thermal conductivity and the coefficient of thermal expansion when the amount of copper in the composite material of the present invention is changed;
- FIG. 5 shows an example of the relationship between the amount of copper and the Young's modulus of the composite material of the present invention
- FIG. 6 shows the thermal expansion coefficient and the thermal expansion coefficient of the composite material of the present invention prepared under almost the same conditions as in FIG. Diagram showing the relationship with the plastic working ratio
- Fig. 7 (a) is a diagram schematically showing an example of the arrangement pattern of the copper pool phase and the Mo-Cu-based composite phase of the composite material of the present invention. A drawing of the case where Miku mouth is drawn;
- FIG. 7 (b) and FIG. 7 (c) are diagrams showing examples in which the copper pool phase of the composite material of the present invention is designed in a functionally graded manner;
- FIG. 7 (d) is a drawing depicting the case where the shape of the copper pool phase of the composite material of the present invention is in the form of a spindle and arranged in a disordered direction, in the view of the mouth of the Miku mouth;
- FIG. 7 (e) is a diagram schematically illustrating a member composed of three layers having different arrangement densities of the ⁇ Pool phase ⁇ of the composite material of the present invention in a Mac mouth view;
- FIG. 7 (f) is a diagram showing another example of an arrangement pattern schematically drawn in a macroscopic view of the composite material of the present invention.
- Fig. 7 (g) is a conceptual perspective view of a rod-shaped copper pool phase oriented in the longitudinal direction of the rod-shaped composite material of the present invention.
- FIG. 8 is a schematic sectional view showing a state where the heat radiating member of the present invention is mounted on a semiconductor module package.
- a copper-based material having an average minor axis of 50 ⁇ m or more is arranged in an M0 matrix, and these are molded and integrated.
- the component of the copper-based material may be pure copper, an alloy of which the main component is copper, or a mixture of these components with a small amount of a minor component, and is selected according to the end use. For example, when used for a member that emphasizes the original functions of copper, such as thermal conductivity and electrical conductivity, it is desirable to use pure copper or electrolytic copper with high purity. Also, for example, when used for mechanical components, it is necessary to select a copper alloy with high toughness as necessary. desirable.
- the outer dimensions are brought close to the final desired outer dimensions in advance, and after molding and integration, the shape is almost the same. It is desirable that the arrangement pattern in the matrix and the matrix be close to the desired form of the final composite material, so that they can be almost maintained.
- the amount of copper-based material arranged to make full use of the function of the copper pool phase is usually 10 to 50 weight. / 0 range. The reason is that if the content is less than 10% by weight, the effect of the copper pool phase, which controls the thermal, electrical and mechanical performances described below, will be diminished, while if it exceeds 50% by weight, the function will be closer to that of copper. This is because the original characteristics are lost.
- the compact and the intermediate sintered body obtained by firing also called intermediate sintering
- the porosity may vary slightly, or the amount of the arranged copper-based material in the composite material may fall slightly within this range.
- Fig. 1 (a), Fig. 1 (b) and Fig. 2 schematically show one example of the micro-arrangement
- Fig. 1 (a) shows a copper-based material placed and formed integrally
- Figure 1 (b) shows the morphology of the same part when the pool phase was formed after copper infiltration in the same field of view
- Fig. 1 (a) and Fig. 1 (b) show the case where plastic working has not been performed
- Fig. 2 shows the case where plastic working has been performed using a rolling roll.
- Fig. 1 (a) it is a copper-based material in which large particles are premixed, and in Fig. 1 (b), this part is the copper pool phase.
- the Mo phase which becomes the matrix in Fig. 1 (a), is filled with a copper-based material in the voids, as shown in Fig. 1 (b), and becomes a Mo-Cu-based composite phase.
- the morphology of the microstructure of the Mo-Cu-based composite phase can be easily changed depending on the size ⁇ shape of the raw material Mo particles, production conditions after molding, and the like. For example, by changing the particle size distribution of Mo particles or by mixing fine powder and coarse powder in an appropriate ratio in advance, the porosity and morphology of the compact or intermediate sintered body can be controlled. Control the amount and size of copper after infiltration and its distribution. This allows The function of the matrix of the composite material can also be controlled.
- the main object of the present invention is to control the function of the composite material by forming a copper pool phase.
- the matrix also has an element capable of controlling the function of the composite material of the present invention.
- the minor axis of the copper-based material indicates the portion of Ds in FIG.
- the minor axis of the copper pool phase in Fig. 1 (b) is also the corresponding part.
- the minor diameter D s is determined from the outer shape of the group. As shown in FIG. 1 (a) and FIG. 2, a portion having the maximum outer shape is defined as a major axis D1, and a portion having a maximum width in a direction perpendicular to the major axis is defined as a minor axis Ds. If the outer shape is fibrous, the length is the major axis D1, and the maximum diameter is the minor axis Ds. In the case of a plate shape, the maximum length in the plane direction is the major axis D1, and the maximum thickness perpendicular to the major axis is the minor axis Ds.
- the reason why the average minor axis is 50 m or more is that when the particles are distributed in a size of less than 50 m, the pool phase forming effect in the composite material is reduced.
- the existence form is observed with an optical microscope in a visual field in an arbitrary cross section, and confirmed by its two-dimensional pattern as shown in FIGS. 1 (a), 1 (b) and 2.
- an arbitrary cross section of the composite material is magnified by a number of 10 to 100 times with an optical microscope and a photograph is taken. If plastic working is performed, take a photograph of the cross section in the direction perpendicular to the working direction.
- all pool phases in the field of view are checked for each unit, and the dimensions corresponding to the major axis and minor axis are individually weighed.
- the average value is the arithmetic average value.
- the average particle size of the Mo powder may be a normal one of the order of several 111, but if it is less than 1 ⁇ m, it is expensive. If it exceeds 10 ⁇ m, for example, thermal properties, electrical properties, mechanical properties Therefore, the range of l to 10 / m is preferable because the dispersion of functions such as dynamic characteristics becomes large.
- the microstructure of the Mo-Cu-based composite phase when control of the microstructure of the Mo-Cu-based composite phase is required, its size and distribution may be appropriately selected according to the purpose.
- the average particle size of the powder in the present invention was measured by the Fisher Sub-Sieve Sizer (FSSS) method.
- the secondary particle size in the case of the copper pool phase, the outer diameter uses both the major axis and the minor axis as described above. The higher the purity of the Cu and Mo powders, the better, but depends on the use of the composite. Usually, 99% or more is good.
- the molding can be done in the usual way, but it is selected according to the final shape and form that is appropriate for the target application.
- powder press molding method hydrostatic molding method, extrusion molding method, injection molding method, doctor blade method, etc.
- the pressure is adjusted to adjust the void amount of the molded body.
- organic or inorganic binders are added for molding, they are premixed. In that case, the type and amount of addition also affect the void volume of the compact and the intermediate sintered body before infiltration, and thus the Cu content of the composite phase and the entire composite material. It is necessary to make adjustments including the heat removal conditions in an inert gas atmosphere and the firing conditions performed to control the amount of voids.
- the molded body is fired at 800 to 1400 ° C in a reducing gas atmosphere.
- a reducing gas atmosphere (Also referred to as intermediate sintering) to shrink the compact to form an intermediate sintered body and secure a desired void volume. This also improves the ease of handling. Since the compact and the intermediate sintered body contain Cu or an alternative Cu alloy in advance, shrinkage starts even at a temperature lower than their melting point. For this reason, the firing temperature is desirably set at 1100 to 1300 ° C in order to suppress shrinkage and deformation due to firing.
- the reducing gas is preferably a gas containing hydrogen.
- a molded body or an intermediate sintered body having a desired void amount is prepared.
- the target value of porosity P (%) in production is W (%), the weight ratio of Cu desired in the composite material, and W, the weight ratio of Cu in the copper-based material initially placed in the compact. (%),
- W the weight ratio of Cu desired in the composite material
- W the weight ratio of Cu in the copper-based material initially placed in the compact.
- p g / cm 3
- p is the density of copper or copper alloy to be infiltrated, it is calculated by the formula (W—W 0 ) / 100/0. If the copper material and the copper or copper alloy to be infiltrated are different, the density of the former and the latter should be P. And p, it is calculated by the formula (WZP—WQZPO) 100.
- the copper content of the present invention is the net content of copper in the composite material. If the initially placed copper-based material or the material to be infiltrated is not pure copper, it will be less than the total amount. On the other hand, the content of the copper pool phase is represented by the weight ratio of the copper phase regardless of the material of the copper phase in the infiltration body.
- the infiltration is performed in a reducing gas atmosphere at a temperature ranging from the melting point of Cu or Cu alloy to 140 ° C. or higher.
- a preferable atmosphere gas is a gas containing hydrogen, and a preferable temperature range is 115 ° C. to 130 ° C. In this temperature range, the melting Cu or Cu alloy is sufficiently infiltrated into the voids.
- the method for producing a composite material of the present invention further includes a case where the infiltrated body is subjected to plastic working.
- plastic working ordinary methods such as hot / warm or cold rolling Z forging Z extrusion Z hot pressing are used depending on the final shape.
- the plastic working conditions such as working temperature, atmosphere, working ratio, etc. are adjusted in consideration of the form of the final plastic working body desired for the member. Densification is achieved by this plastic working, and if there are voids in the infiltrated body, the amount can be reduced.
- the stretch orientation of the structure occurs, and directionality is given to the material function.
- the initial shape is the initial dimension in the direction compressed by plastic working (for example, initial thickness)
- the shape after processing is the dimension in the same direction after plastic working (for example, the thickness after processing). ).
- FIG. 3 is a diagram showing an example of the structure of the composite material of the present invention obtained as described above, which is plastically worked by a hot rolling method.
- the structure is composed of a mixture of the copper pool phase and the Mo-Cu-based composite phase.
- the stretched light colored portion corresponds to the copper pool phase
- the other dark colored portions correspond to the Mo-Cu-based composite phase.
- the amount of copper in the composite of the present invention, including the copper pool phase is in the range of 30 to 70% by weight of the total.
- the content is less than 30% by weight, the characteristics of Mo are greatly increased and the workability in performing plastic working is reduced.
- 70% by weight even if a copper pool phase is formed, the effect of compounding utilizing the characteristics of Mo and Cu decreases.
- the Cu amount is controlled within this range according to the target application. For example, when used as a heat dissipating member of a semiconductor device, a range of 40 to 60% by weight is preferable in order to match the thermal expansion coefficient with the GaAs semiconductor element and the alumina envelope material.
- the amount of copper pool phase should be between 10 and 50% by weight of the total composite. The reason is that if it is less than 10% by weight, as will be described later, the effect of controlling the thermal or electrical or mechanical properties by forming it is reduced. On the other hand, if it exceeds 50% by weight, the function becomes close to that of Cu, and the original characteristics of the composite material are weakened.
- the average minor axis is preferably 50 to 200 x m. If the amount is less than the lower limit, the effect may decrease for the same reason as described above, and if the amount exceeds the upper limit, the uniformity of the function of the composite material may be impaired.
- the size and amount of the copper pool phase is controlled within this range, but appropriate design is performed according to the amount of copper in the composite material and the intended functional application of the material. Also, the appropriate range may differ between plastically processed and non-plastically processed ones for the same application.
- the C It is desirable to control the amount of u in the range of 40 to 60% by weight.
- the amount of copper pool phase should be 25 to 4% by weight. It is desirable to be in the range of 5% by weight.
- the amount of copper pool phase is larger than when radiating heat in the surface direction perpendicular to the thickness direction. Need to be
- the numerical values of 0, 10 and 30 at the upper end of the six lines indicate the amount (% by weight) of the copper pool phase.
- the solid lines are three. Is a case where plastic working is performed at a working ratio of 90% by hot rolling.
- the amount of copper increases toward the upper right on each line.
- the thermal conductivity in the present invention was measured in the thickness direction of a plate-shaped specimen by a laser-flash method. Value. If plastic working has not been performed, cut out the specimen from any part of the raw material.If plastic processing has been performed, the direction perpendicular to the plastic working direction of the raw material is the thickness direction of the specimen. The specimen is cut out to become.
- the specimen without the pool phase in Fig. 4 shows only the Mo_Cu-based composite phase in which the infiltrated copper is filled in the pores of the ⁇ o particle matrix with an average minor axis of about 3 ⁇ m.
- Consists of The sample in which the copper pool phase was formed was one in which the copper pool phase force S having an average particle size of about 100 ⁇ was almost uniformly dispersed in the same Mo_Cu system composite phase.
- the thermal conductivity is the same, the formation of the copper pool phase reduces the coefficient of thermal expansion.
- the amount of copper pool phase of copper of 3 0 wt% or more at 1 0% by weight or more areas are at least 0. 4 X 1 0 one 6 Z ° C or higher. Even if the thermal conductivity is replaced by the electrical conductivity, the relationship with the thermal expansion coefficient tends to be almost the same.
- the Young's modulus was measured by an ultrasonic resonance method using these specimens.
- the numerical values of 0 and 10 at the upper end of the two lines indicate the amount (% by weight) of the copper pool phase, and the solid line indicates the amount of copper pool phase when the working rate is 0%. This is the case where plastic working is performed at a rate of 90%.
- Specimens were cut and checked so that the direction perpendicular to the rolling direction of the raw material was the direction of load.
- the sample without the copper pool phase shown in Fig. 5 is only the Mo_Cu-based composite phase in which the voids of the Mo particle matrix having an average particle size of about 3 am are filled with copper. is there.
- the copper pool phase with an average minor axis of about 100 ⁇ was dispersed almost evenly in the same Mo_Cu-based composite phase matrix in a total amount of 10% by weight. It has been done.
- material having a copper content of 70% by weight or less the Young's modulus increases due to an increase in the amount of the copper pool phase even with the same copper content. From Fig. 5, it can be seen that the copper pool phase is formed at least 15 MPa higher at least with the same amount of copper, that is, it has a Young's modulus higher by at least 10% than the case without the copper pool phase. .
- the composite material of the present invention has the same total copper content without a copper pool phase, and has a Mo-Cu-based composite phase constituting a matrix as compared with a composite material containing only a Mo-Cu-based composite phase. It is thought that such a phenomenon occurs because the amount of Mo inside is relatively large.
- the level of the coefficient of thermal expansion in the thickness direction varies depending on the amount of copper, but also varies depending on the degree of plastic working as described above.
- FIG. 6 is a view showing the relationship between the thermal expansion coefficient and the plastic working ratio of the material of the present invention prepared under substantially the same conditions as in FIG. 4 described above.
- the numerical value at the right end of the line in Fig. 6 is the amount of copper (% by weight).
- the slope of the straight line in Fig. 6 indicates that at least 0.2 X 1 0 one 6 /.
- C. 7A to 7 (g) are diagrams schematically showing examples of the arrangement pattern of the copper pool phase and the Mo—Cu based composite phase of the composite material of the present invention.
- the black color, the part is the copper pool phase, and the white color, the part is the matrix consisting of the Mo-Cu complex phase.
- the pattern should be designed within the visual field range shown in Fig. 3, that is, when it is micro-designed, at the scale of the material or member, that is, when it is macro-designed, and when it is used in combination or mixed. May be done.
- the design elements include the component types of the composite material, the form of the copper pool phase, and the form of the Mo-Cu based composite phase.
- the component type of the composite material examples include a copper-based material component such as pure copper and a copper alloy, Mo, and components added to these.
- the form of the pool phase includes its size and shape, its arrangement interval, and the arrangement density per unit volume of the composite material.
- the form of the Mo-Cu based composite phase is the size and distribution of Mo particles. and so on.
- Fig. 7 (a) is a drawing depicting the case where multiple sizes of copper pool phases are mixed and arranged microscopically in a microscopic view.
- a material having the same performance in the absence of a copper pool phase can be obtained as compared to the case where a copper pool phase having almost the same size is arranged.
- the morphological elements of the Mo-Cu complex phase such as the size and distribution of Mo particles, materials with more various functions can be obtained within a similar functional range.
- FIGS. 7 (b) and 7 (c) show examples where the copper pool phase is designed and arranged in a functionally graded manner.
- Fig. 7 (b) shows that the surface is almost continuous from one side A to another side B.
- FIG. 4 is a diagram illustrating a case where objects having different sizes are arranged from large to small. The size town may be intermittent.
- Fig. 7 (c) is a macro-field view of the case where the same spacing between copper pool phases is changed stepwise or continuously from one plane A to another plane B. It may be changed intermittently.
- Inclination There are many other elements that are functionally designed and designed, such as component types, their weight ratios, the starting point of inclination and its direction.
- an integrated member having a different coefficient of thermal expansion between the front and back, the center, and the outer periphery can be obtained. It can be easily attached in the absence. Also in this case, functional materials with more various functional levels can be obtained in combination with the morphological element of the Mo-Cu composite phase.
- Fig. 7 (d) is a drawing depicting the case where the shape of the copper pool phase is spindle-shaped and arranged in a disordered direction in the Mikuguchi view.
- a copper-based material of this type may be arranged in a predetermined direction and molded and integrated, or copper with a normal spherical elliptical shape may be used. It can also be obtained by placing a base material and infiltrating copper, followed by plastic working. By doing so, directionality is provided, and fine adjustment of functions can be easily performed. For this reason, for example, applications to electrical contacts, spots, resistance welding, electric discharge machining, heat dissipating members / mechanism members, etc. are expanded.
- Fig. 7 (e) is a schematic drawing of a member consisting of three layers with different arrangement densities of the copper pool phase, viewed from the Mac-mouth.
- the dotted line in Fig. 7 (e) indicates the boundary between layers.
- This material is obtained, for example, by extruding and pressing three layers of green sheets, punching them out, firing and infiltrating copper. In this case, if devised, more continuity can be provided. In this way, a member having the same functions as those in FIGS. 7 (b) and 7 (c) is obtained.
- the central part which has the first function, increases the porosity by being composed only of Mo particles with a narrow distribution width and small diameter, and increases the amount of infiltrated copper buried there.
- the outer peripheral part which has the second function, is configured with large diameter Mo particles added to reduce the porosity and reduce the amount of infiltrated copper buried there.
- the resulting member has high heat dissipation in the central part with a large amount of copper, and low heat in the outer parts with a small amount of copper. Becomes thermally expandable.
- a composite member can be easily provided.
- FIG. 7 (f) and subsequent drawings show another example of an arrangement pattern schematically drawn in a macro field of view.
- Fig. 7 (f) shows a case where a portion with a higher arrangement density of the copper pool phase is formed radially in the plane direction, and this portion serves as a main path for heat and current, and mainly due to mechanical distortion.
- a buffer passage or the like is provided. This may be formed only on one surface portion, or may be formed so as to extend to the back side. The form can be freely changed according to the application.
- FIG. 7 (g) is a conceptual perspective view in which a rod-shaped copper pool phase is oriented in the longitudinal direction of the rod-shaped member. There are many possible applications for this as well.
- the composite material of the present invention is not only a heat-dissipating member that has been used in the past, but also has a two-dimensional or three-dimensional arrangement that has a combination of the presence or absence of the copper pool phase and the density of the arrangement density.
- a pattern By using a pattern, it can be used in a large number of applications, such as for electrical conduction, electrical discharge machining, welding, electrical joining, chemical equipment, and mechanical parts.
- a plurality of or different types of functions can coexist on the same member, such as one part being a heat radiating part and another part being a mechanical part.
- the use of Mo-Cu composite phase in addition to the copper pool phase, or the use of surface treatment or compounding with other functional materials, etc. will further expand the applications.
- the average particle size is
- the average particle size is
- the molding powders of Sample Nos. 9 to 35 were prepared as follows.
- samples No. 13 to No. 13 of Sample Nos. 9 to 34 were prepared as they were, and were mixed with the respective copper-based materials at the indicated ratio in a V-type mixer.
- Ni powder with a weight ratio of 1% and an average particle size of 2 ⁇ was added to Mo powder 100 of material No. 13 in a weight ratio of 100, and the mixture was added to a stainless steel ball and pot ball mill.
- the mixture was premixed and ground, and vacuum-dried M0 powder and each copper-based material were mixed at the indicated ratio in a V-type mixer to prepare a mixture.
- the copper-based material was almost uniformly dispersed and arranged in the Mo powder while maintaining its original shape.
- 1% by weight of camphor was mixed with 100 parts of these powders using alcohol as a medium, and the mixture was subjected to emulsification pulverization to obtain a molding powder.
- the molding powders of Sample Nos. 1 to 35 prepared as described above were filled in a mold at room temperature, and were molded and integrated by a powder press under a pressure of 5 ton Z cm 2 . Thereafter, the binder was removed at 400 ° C. in a nitrogen gas stream. Those marked with a # mark were intermediately sintered at 800 to 140 ° C. in a hydrogen atmosphere to adjust the porosity. The porosity was calculated from the outer dimensions and weight of the obtained molded body or intermediate sintered body.
- the molding integration was performed by extrusion molding and injection molding, respectively. Prepare the M0 powder of material number 11 and the copper material of material number 4 and weigh them so that the Mo powder is 80% by weight and the copper material is 20% by weight. Then, the mixture was premixed with a V-type mixer as described above.
- the powder of sample No. 36 was prepared by adding a 100% aqueous solution of polybutyl acetate containing a plasticizer to the powder (100%) at a volume ratio of 5% solids, kneading the mixture, extruding it with a rectangular cross section, and cutting it. A molded article was obtained.
- the powder of sample No. 37 was prepared by adding 30% by volume of polyethylene containing a plasticizer to the above powder 100, mixing by heating, kneading, and hot-injecting and molding into a notebook with a rectangular cross section. A molded article was obtained. Thereafter, heating was performed in a vacuum, and the solid content was removed at 400 ° C. for the former and 600 ° C. for the latter. Furthermore, intermediate firing was performed at 1200 ° C. in hydrogen to obtain the porosity shown in Table 3 below. Thereafter, a copper-based infiltration material was infiltrated under the same conditions as for sample numbers 1 to 34.
- Specimen No. 38 proceeded to infiltration under the same conditions as Specimen No. 15 except that material No. 9 was used for the copper-based material. Table 3
- Thickness direction Thickness direction
- Sample No. 39 was prepared as follows.
- a copper-based material made of cupper copper containing about 1% by weight of Cr of material number 10 in Table 1 above and Mo powder of material number 13 in Table 2 were prepared.
- sample No. 39 first, 20% by weight of a copper-based material and 80% by weight of Mo powder were mixed by a V-type mixer. On the other hand, the starting material of sample number 4 ° was only Mo powder.
- 5% by volume of an aqueous solution of polybutyl acetate containing a plasticizer was added to each powder, kneaded, extruded in a rectangular cross-sectional shape, and cut into a compact. These compacts were calo-heated at 400 ° C. in a vacuum to remove each binder. Further, intermediate sintering was performed at 1300 ° C in hydrogen, and chromium copper of the same material as the raw copper material was infiltrated into the voids at 1250 ° C in hydrogen.
- the amount of copper pool phase can be determined by taking a 50x optical micrograph of the polished sample cross section, processing the copper portion in the same field of view, and calculating the area ratio of the copper pool phase in that portion. Was calculated, and this was calculated based on the result of the analyzed total copper value.
- the total amount of copper and the amount of copper pool phase in the infiltrated body in Table 3 above are confirmed values.
- the component amounts of the plastically formed body are the same as these, and are not listed in the table.
- the relative density after infiltration in Table 4 is the ratio (%) of the measured density determined by the underwater method (Archimedes method) to the theoretical density calculated from the results of component analysis of the sample. After the plastic working, it was confirmed to be 100% in all cases.
- the method of measuring and confirming the thermal conductivity and thermal expansion coefficient is as described above.
- each infiltration body was performed as follows. First, the outer parts of all the infiltrated body samples were removed, and a rectangular material was prepared. After that, it was passed through a hot rolling machine to obtain 15 °. Hot rolling was performed at a working ratio in the range of 30% to 90% within a temperature range of C to 300 ° C. Using these rolled hoops, each property was confirmed / determined in the same procedure as for the infiltration body.
- Tables 3 to 5 summarize the above results. Although there is no description of the Young's modulus results in the table, the data for Sample Nos. 1 to 38 are almost on the line in Fig. 5, as described in Fig. 5 above. Was done. For sample numbers 39 and 40, Results almost in line with this were confirmed, and in all cases, in MPa units, immediately after infiltration, 39 was 145 MPa, 40 was 130 MPa, and after plastic working at a processing rate of 10%, 39 was 160 MPa and 40 were 145 MPa. Although the electrical conductivity is not listed in the table, it is the specimen used in the above example. /.
- the composite of the present invention in which the copper pool phase was formed was higher in the samples with the same electrical conductivity than in the sample without the copper pool phase.
- the material was found to have a coefficient of thermal expansion as small as 5% and a Young's modulus as high as 10%.
- reference numeral 21 denotes an intermediate substrate made of the above-described composite material of the present invention
- reference numeral 22 denotes a silicon semiconductor element having a thermal expansion coefficient of about 4 ⁇ 10 6 / ° C.
- reference numeral 23 denotes a thermal expansion coefficient of about 4 ⁇ 10— an upper substrate consisting of 6 Z ° C for aluminum nitride (a 1 N) ceramics, 24 thermal expansion coefficient of 1 7 X 10 one 6 /.
- This is a base substrate made of C copper.
- an envelope 25 such as ceramics or metal is connected by silver, and the intermediate substrate 21 is connected to the base substrate 24 by silver-tin solder. . Further, the surrounding equipment 25 is usually silver-plated.
- the program for one cycle of the heating and cooling cycle is -50. After holding for 15 minutes at, the temperature was raised in 30 minutes and kept at 150 ° C for 15 minutes. This was repeated 2,000 cycles while checking for module output every 500 cycles and checking for damage.
- the results are shown in Table 6 below.
- “damage” refers to damage to the connection due to warpage or the like. Since there was almost no difference between the same sample number before and after the molding, they are not shown separately. However, there was no copper pool phase and the degree of final damage was smaller after plastic working. From these results, the practical superiority of the material of the present invention is apparent. Samples 2, 5, 10, and 18 had the same total copper content and the same amount of copper pool phase as those of Sample Nos.
- the cooling / heating cycle program is severe, and the difference in thermal expansion coefficient between the intermediate substrate and the high Young's modulus / ceramic upper substrate is large. For this reason, an intermediate substrate having high thermal conductivity that withstands thermal strain between the two is required, but it can be seen that the composite material of the present invention is suitable for this.
- the module was mounted as a heat radiating member on various other semiconductor devices that have a lower cooling load in practical use than this module, and the effect of copper pool phase formation was confirmed.
- the superiority of the material of the present invention in the durability at the time of mounting and after packaging was confirmed. From the above results, it can be concluded that, for the members used in the semiconductor device including the heat dissipating member, ⁇ the present invention in which the copper pool phase is formed is more preferable than the member in which the pool phase is not formed. I understand. Table 6
- a pair of electrodes for spot welding with a diameter of 5 mm and a thickness of 5 mm were cut out from the materials immediately after infiltration of sample numbers 2 and 10.
- an electrical contact with a diameter of 5 mm and a thickness of l mm was spot-welded to a copper alloy.
- the electrode pair was prepared and fixed facing the current-carrying part of the welding machine.
- the electrical contact assembly consists of a silver butterfly flake placed on a base metal, on which electrical contacts made mainly of silver are placed. This assembly was placed on the lower fixed electrode, the upper movable electrode was lowered, and a load of 500 g was applied to the assembly. .
- the spot welding was repeated in this way, and the electrode consumption at the point where the number of welds exceeded 100 was compared.
- the copper pool phase of sample No. 10 was found to be the copper pool of sample No. 2. Almost 60% of the phase was not formed.
- EDM electrodes with a diameter and thickness of 1 O mm were cut from the materials of sample numbers 2 and 10. did.
- a bottomed hole with a diameter of about 10 mm and a depth of 3 mm was formed on one surface of a rod-shaped TiC-Co-based comment part with a diameter of 20 mm by electric discharge machining.
- the amount of electrode depletion at the point where the number of processing exceeded 100 was compared.
- Sample No. 10 which formed the copper pool phase was sample No. 2 In this case, almost 70% of the copper punoole phase was not formed.
- the composite material according to the present invention is most suitable for electric and electronic members such as heat dissipating members and structural members of electric and electronic devices, members for heat dissipating devices, electric contacts, electrodes for electric discharge machining and welding, and members for chemical devices. .
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Powder Metallurgy (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03758996.7A EP1566456B1 (en) | 2002-10-28 | 2003-10-28 | Composite material, method for producing same and member using same |
JP2004546491A JP4615312B2 (ja) | 2002-10-28 | 2003-10-28 | 複合材料、その製造方法およびそれを用いた部材 |
US10/533,087 US7547412B2 (en) | 2002-10-28 | 2003-10-28 | Composite material, method for producing same and member using same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2002-312130 | 2002-10-28 | ||
JP2002312130 | 2002-10-28 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004038049A1 true WO2004038049A1 (ja) | 2004-05-06 |
Family
ID=32171108
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2003/013779 WO2004038049A1 (ja) | 2002-10-28 | 2003-10-28 | 複合材料、その製造方法およびそれを用いた部材 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7547412B2 (ja) |
EP (1) | EP1566456B1 (ja) |
JP (1) | JP4615312B2 (ja) |
CN (1) | CN100475991C (ja) |
WO (1) | WO2004038049A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007142126A (ja) * | 2005-11-18 | 2007-06-07 | Allied Material Corp | 複合材料及び半導体搭載用放熱基板、及びそれを用いたセラミックパッケージ |
JP6083634B2 (ja) * | 2014-12-05 | 2017-02-22 | 株式会社半導体熱研究所 | 放熱基板及び該放熱基板の製造方法 |
KR20200008575A (ko) * | 2017-05-11 | 2020-01-28 | 플란제 에스이 | 금속 플라이를 갖는 층 구조를 포함하는 가요성 부품 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP1985718A4 (en) * | 2006-02-15 | 2009-09-16 | Jfe Prec Corp | CR-Cu ALLOY, PROCESS FOR PRODUCING THE SAME, THERMAL DISSIPATOR FOR SEMICONDUCTOR, AND THERMAL DISSIPATOR COMPONENT FOR SEMICONDUCTOR |
DE102007059443A1 (de) * | 2007-12-10 | 2009-06-18 | Li-Tec Vermögensverwaltungs GmbH | Elektrode für einen Energiespeicher |
CN102612745B (zh) | 2009-10-01 | 2016-02-24 | Jfe精密株式会社 | 电子设备用散热板及其制造方法 |
CN103170616B (zh) * | 2011-12-21 | 2015-07-22 | 北京有色金属研究总院 | 一种钼铜合金箔片及其制备方法 |
CN103187544B (zh) | 2011-12-28 | 2015-07-22 | 比亚迪股份有限公司 | 一种电池的负极密封组件及其制作方法、以及一种锂离子电池 |
CN102560214B (zh) * | 2012-02-09 | 2013-04-10 | 北京航空航天大学 | 一种面对等离子体材料中抗起泡的梯度多孔结构 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3721550A (en) | 1970-03-26 | 1973-03-20 | Siemens Ag | Process for producing a heterogenous penetration-bonded metal |
US5167697A (en) | 1990-06-18 | 1992-12-01 | Nippon Tungsten Co., Ltd. | Substrate material for mounting semiconductor device thereon and manufacturing method thereof |
JPH05171222A (ja) * | 1991-12-26 | 1993-07-09 | Nippon Tungsten Co Ltd | 重量可変部材の製造法 |
US20020017346A1 (en) * | 1997-07-08 | 2002-02-14 | Mitsuo Osada | Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3378439D1 (en) * | 1982-08-09 | 1988-12-15 | Meidensha Electric Mfg Co Ltd | Contact material of vacuum interrupter and manufacturing process therefor |
US4661666A (en) * | 1985-05-28 | 1987-04-28 | Kabushiki Kaisha Meidensha | Vacuum interrupter |
JPH06310620A (ja) | 1993-04-27 | 1994-11-04 | Sumitomo Electric Ind Ltd | 半導体装置用放熱基板及びその製造方法 |
JP2746078B2 (ja) | 1993-09-30 | 1998-04-28 | 松下電工株式会社 | 光電式煙感知器 |
JPH1012767A (ja) | 1996-06-19 | 1998-01-16 | Tokyo Tungsten Co Ltd | 積層構造放熱基板及びその製造方法 |
JP3548991B2 (ja) * | 1997-08-22 | 2004-08-04 | 株式会社アライドマテリアル | 放熱基板及びその製造方法 |
SE9704685L (sv) * | 1997-12-15 | 1999-06-16 | Asea Brown Boveri | Kopplingsanordning och -förfarande |
JP3505704B2 (ja) | 1999-05-10 | 2004-03-15 | 株式会社アライドマテリアル | 放熱基板およびその製造方法 |
JP3856640B2 (ja) | 2000-01-26 | 2006-12-13 | 株式会社アライドマテリアル | 半導体搭載用放熱基板材料、その製造方法、及びそれを用いたセラミックパッケージ |
-
2003
- 2003-10-28 US US10/533,087 patent/US7547412B2/en active Active
- 2003-10-28 CN CN200380102302.XA patent/CN100475991C/zh not_active Expired - Fee Related
- 2003-10-28 EP EP03758996.7A patent/EP1566456B1/en not_active Expired - Lifetime
- 2003-10-28 WO PCT/JP2003/013779 patent/WO2004038049A1/ja active Application Filing
- 2003-10-28 JP JP2004546491A patent/JP4615312B2/ja not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3721550A (en) | 1970-03-26 | 1973-03-20 | Siemens Ag | Process for producing a heterogenous penetration-bonded metal |
US5167697A (en) | 1990-06-18 | 1992-12-01 | Nippon Tungsten Co., Ltd. | Substrate material for mounting semiconductor device thereon and manufacturing method thereof |
JPH05171222A (ja) * | 1991-12-26 | 1993-07-09 | Nippon Tungsten Co Ltd | 重量可変部材の製造法 |
US20020017346A1 (en) * | 1997-07-08 | 2002-02-14 | Mitsuo Osada | Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007142126A (ja) * | 2005-11-18 | 2007-06-07 | Allied Material Corp | 複合材料及び半導体搭載用放熱基板、及びそれを用いたセラミックパッケージ |
JP6083634B2 (ja) * | 2014-12-05 | 2017-02-22 | 株式会社半導体熱研究所 | 放熱基板及び該放熱基板の製造方法 |
KR20200008575A (ko) * | 2017-05-11 | 2020-01-28 | 플란제 에스이 | 금속 플라이를 갖는 층 구조를 포함하는 가요성 부품 |
JP2020522728A (ja) * | 2017-05-11 | 2020-07-30 | プランゼー エスエー | 金属層を有する層状構造を備えたフレキシブル部品 |
JP7282688B2 (ja) | 2017-05-11 | 2023-05-29 | プランゼー エスエー | 金属層を有する層状構造を備えたフレキシブル部品 |
KR102557501B1 (ko) * | 2017-05-11 | 2023-07-20 | 플란제 에스이 | 금속 플라이를 갖는 층 구조를 포함하는 가요성 부품 |
Also Published As
Publication number | Publication date |
---|---|
JP4615312B2 (ja) | 2011-01-19 |
EP1566456A4 (en) | 2010-01-20 |
EP1566456B1 (en) | 2013-10-02 |
EP1566456A1 (en) | 2005-08-24 |
JPWO2004038049A1 (ja) | 2006-02-23 |
CN1708596A (zh) | 2005-12-14 |
US20050287387A1 (en) | 2005-12-29 |
US7547412B2 (en) | 2009-06-16 |
CN100475991C (zh) | 2009-04-08 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1873272B1 (en) | Alloy material for dissipating heat from semiconductor device and method for production thereof | |
CN102612745B (zh) | 电子设备用散热板及其制造方法 | |
TWI633637B (zh) | 放熱板及其製造方法、以及具備其的半導體封裝與半導體模組 | |
JP2005330583A (ja) | Cu−Cr合金及びCu−Cr合金の製造方法 | |
WO2020013300A1 (ja) | 金属-炭化珪素質複合体、及び金属-炭化珪素質複合体の製造方法 | |
CN111357100A (zh) | 散热板及其制造方法 | |
KR20010079642A (ko) | 복합 재료 및 그를 이용한 반도체 장치 | |
WO2004038049A1 (ja) | 複合材料、その製造方法およびそれを用いた部材 | |
KR101691724B1 (ko) | 고출력 소자용 방열판재 | |
JP2019096860A (ja) | 放熱板及びその製造方法 | |
JP2001105124A (ja) | 半導体素子用放熱基板 | |
JP3548991B2 (ja) | 放熱基板及びその製造方法 | |
JP4404602B2 (ja) | セラミックス−金属複合体およびこれを用いた高熱伝導放熱用基板 | |
JP2000297301A (ja) | 炭化珪素系複合材料とその粉末およびそれらの製造方法 | |
JP6981846B2 (ja) | 放熱板及びその製造方法 | |
JP2010126791A (ja) | 放熱材料およびそれを用いた半導体用放熱板と半導体用放熱部品、並びに放熱材料の製造方法 | |
JP4228444B2 (ja) | 炭化珪素系複合材料およびその製造方法 | |
JP2003078087A (ja) | 半導体素子用フィン付き放熱性複合基板 | |
JP2000007456A (ja) | 高熱伝導性セラミックス金属複合材料 | |
JP3552587B2 (ja) | 複合材料及び半導体装置 | |
JP2000026926A (ja) | リードフレーム用複合材とそれを用いた半導体パッケージ | |
JPS59143347A (ja) | 半導体基板材料の製造方法 | |
JP2004055577A (ja) | アルミニウム−炭化珪素質板状複合体 | |
JP4265247B2 (ja) | 高放熱性合金、放熱板、半導体素子用パッケージ、およびこれらの製造方法 | |
JP2815656B2 (ja) | パッケージ型半導体装置の高強度放熱性構造部材 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
WWE | Wipo information: entry into national phase |
Ref document number: 2004546491 Country of ref document: JP |
|
AK | Designated states |
Kind code of ref document: A1 Designated state(s): CN JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A1 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 10533087 Country of ref document: US Ref document number: 20038A2302X Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2003758996 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2003758996 Country of ref document: EP |