JP7252665B2 - 発光素子パッケージ - Google Patents
発光素子パッケージ Download PDFInfo
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- JP7252665B2 JP7252665B2 JP2021168120A JP2021168120A JP7252665B2 JP 7252665 B2 JP7252665 B2 JP 7252665B2 JP 2021168120 A JP2021168120 A JP 2021168120A JP 2021168120 A JP2021168120 A JP 2021168120A JP 7252665 B2 JP7252665 B2 JP 7252665B2
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- light emitting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/64—Heat extraction or cooling elements
- H01L33/642—Heat extraction or cooling elements characterized by the shape
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
- H01L33/486—Containers adapted for surface mounting
Description
ーンと、垂直に貫通され前記金属パターンに選択的に接続された接続部材117とを含めてもよい。前記接続部剤117は、ビアまたはビアホールを含み、これに対する限定はない。他の例として、前記複数の絶縁層L1-L7は窒化物または酸化物のような絶縁性部材を含めてもよく、好ましくは、熱伝導率が酸化物または窒化物より高い金属窒化物を含めることができる。前記本体110の材質は、例えば、SiO2、SixOy、Si3N4、SixNy、SiOxNy、Al2O3、またはAlNであってもよく、熱伝導率が140W/mk以上の金属窒化物からなりうる。
1側面と空洞111の一側面との間に配置され、第2副空洞113は前記発光ダイオード131の第2側面と空洞111の他の側面との間に配置される。前記発光ダイオード131の第1側面と第2側面とはお互い反対面であってもよい。前記第1副空洞112と前記第2副空洞113は前記発光ダイオード131の中心を経る斜線方向または対称の位置に配置されてもよく、これに対する限定はない。
9は、p型ペッドまたは/及び電極層を含めてもよい。前記電極層は酸化物または窒化物系の透光層、例えば、ITO(indium tin oxide)、ITON(ind ium tin oxide nitride)、IZO(indium zinc o xide)、IZON(indium zinc oxide nitride)、IZ TO(indium zinc tin oxide) 、 IAZO(indium al uminum zinc oxide) 、 IGZO(indium gallium z inc oxide)、IGTO(indium gallium tin oxide)、AZO(aluminum zinc oxide)、ATO(antimony tin oxide)、GZO(gallium zinc oxide)、IrOx、RuOx、NiOの物質中から選択され形成されることができる。
Claims (9)
- 上面と下面とを有する本体であって、前記本体の前記上面から前記本体の前記下面へ向かって凹んだ空洞と、前記空洞の底面から前記本体の前記下面へ向かって凹んだ複数の副空洞と、を含む本体と、
前記本体内であって前記空洞の前記底面と前記本体の前記下面との間に配置され、第1放熱部と第2放熱部とを含む放熱部材と、
前記空洞の前記底面と複数の前記副空洞の底面とに配置された複数の電極と、
前記本体の前記下面に設けられ、複数の前記電極の少なくとも一つと電気的に接続される、少なくとも一つのパッドと、
前記空洞の前記底面に位置する前記電極上に配置され、複数の前記電極と電気的に接続される発光ダイオードと、を含み、
前記第2放熱部が前記第1放熱部の下に配置され、
前記第1放熱部は、上面周りに側面より前記本体の側方向に突出する突起を有し、
前記突起は、複数の前記副空洞の少なくとも一つとの間隔が0.3mmより大きいである、発光素子パッケージ。 - 前記放熱部材の上面の面積が前記発光ダイオードの下面の面積より大きい、請求項1に記載の発光素子パッケージ。
- 前記少なくとも一つのパッドと前記放熱部材との間にバッファ層が設けられ、前記バッファ層の厚さは前記放熱部材の厚さより薄い、請求項1又は2に記載の発光素子パッケージ。
- 前記第1放熱部は、側面に凹部構造を有し、前記凹部構造が前記突起と前記第2放熱部との間に設けられる、請求項1から3の何れか一項に記載の発光素子パッケージ。
- 前記少なくとも一つのパッドは、第1パッド、第2パッド及び第3パッドを含み、
前記第2パッドは、前記第1パッドと前記第3パッドとの間に配置される、請求項3に記載の発光素子パッケージ。 - 前記第2放熱部の下面の面積は、前記第2パッドの頂面の面積より小さい、請求項5に記載の発光素子パッケージ。
- 前記バッファ層は、前記放熱部材と前記第2パッドとの間に配置され、前記放熱部材の下面及び前記第2パッドの前記頂面と接触しており、
前記バッファ層の頂面が、前記バッファ層の下面より粗く、
前記バッファ層の幅は、前記放熱部材の下面の幅より広い、請求項6に記載の発光素子パッケージ。 - 複数の前記電極は、前記発光ダイオードと前記放熱部材との間に設けられた第1電極を含み、
前記第1電極の下面は、前記放熱部材と接触し、前記放熱部材と前記発光ダイオードを電気的に接続し、
前記第1電極の幅は、前記放熱部材の頂面の幅より広い、請求項1から7の何れか一項に記載の発光素子パッケージ。 - 前記空洞の前記底面から複数の前記副空洞の底面までの深さは、前記本体の前記上面から前記空洞の前記底面までの深さの1/4から1/2の範囲にある、請求項1から8の何れか一項に記載の発光素子パッケージ。
Applications Claiming Priority (6)
Application Number | Priority Date | Filing Date | Title |
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KR10-2011-0045379 | 2011-05-13 | ||
KR20110045379 | 2011-05-13 | ||
KR1020110045378A KR101869552B1 (ko) | 2011-05-13 | 2011-05-13 | 발광 소자 패키지 및 이를 구비한 자외선 램프 |
KR10-2011-0045378 | 2011-05-13 | ||
JP2018112131A JP6498820B2 (ja) | 2011-05-13 | 2018-06-12 | 発光素子パッケージ |
JP2019046940A JP6966761B2 (ja) | 2011-05-13 | 2019-03-14 | 発光素子パッケージ |
Related Parent Applications (1)
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JP2019046940A Division JP6966761B2 (ja) | 2011-05-13 | 2019-03-14 | 発光素子パッケージ |
Publications (2)
Publication Number | Publication Date |
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JP2022009093A JP2022009093A (ja) | 2022-01-14 |
JP7252665B2 true JP7252665B2 (ja) | 2023-04-05 |
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Family Applications (6)
Application Number | Title | Priority Date | Filing Date |
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JP2012105795A Active JP5968674B2 (ja) | 2011-05-13 | 2012-05-07 | 発光素子パッケージ及びこれを備える紫外線ランプ |
JP2016134019A Active JP6144391B2 (ja) | 2011-05-13 | 2016-07-06 | 発光素子パッケージ |
JP2017094172A Active JP6400782B2 (ja) | 2011-05-13 | 2017-05-10 | 発光素子パッケージ |
JP2018112131A Active JP6498820B2 (ja) | 2011-05-13 | 2018-06-12 | 発光素子パッケージ |
JP2019046940A Active JP6966761B2 (ja) | 2011-05-13 | 2019-03-14 | 発光素子パッケージ |
JP2021168120A Active JP7252665B2 (ja) | 2011-05-13 | 2021-10-13 | 発光素子パッケージ |
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JP2012105795A Active JP5968674B2 (ja) | 2011-05-13 | 2012-05-07 | 発光素子パッケージ及びこれを備える紫外線ランプ |
JP2016134019A Active JP6144391B2 (ja) | 2011-05-13 | 2016-07-06 | 発光素子パッケージ |
JP2017094172A Active JP6400782B2 (ja) | 2011-05-13 | 2017-05-10 | 発光素子パッケージ |
JP2018112131A Active JP6498820B2 (ja) | 2011-05-13 | 2018-06-12 | 発光素子パッケージ |
JP2019046940A Active JP6966761B2 (ja) | 2011-05-13 | 2019-03-14 | 発光素子パッケージ |
Country Status (4)
Country | Link |
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US (2) | US10270021B2 (ja) |
EP (1) | EP2523230B1 (ja) |
JP (6) | JP5968674B2 (ja) |
CN (2) | CN106848033B (ja) |
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JP6966761B2 (ja) | 2021-11-17 |
CN106848033A (zh) | 2017-06-13 |
JP6498820B2 (ja) | 2019-04-10 |
CN102779932A (zh) | 2012-11-14 |
JP2012244170A (ja) | 2012-12-10 |
JP6400782B2 (ja) | 2018-10-03 |
JP2019117939A (ja) | 2019-07-18 |
EP2523230A3 (en) | 2015-12-02 |
JP2017143304A (ja) | 2017-08-17 |
JP2022009093A (ja) | 2022-01-14 |
JP5968674B2 (ja) | 2016-08-10 |
US20120286319A1 (en) | 2012-11-15 |
EP2523230B1 (en) | 2019-09-18 |
CN106848033B (zh) | 2019-04-19 |
US10270021B2 (en) | 2019-04-23 |
EP2523230A2 (en) | 2012-11-14 |
CN102779932B (zh) | 2017-01-18 |
JP6144391B2 (ja) | 2017-06-07 |
US20190067544A1 (en) | 2019-02-28 |
US10811583B2 (en) | 2020-10-20 |
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JP2018137488A (ja) | 2018-08-30 |
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