JP7242491B2 - 半導体装置及び半導体回路 - Google Patents

半導体装置及び半導体回路 Download PDF

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Publication number
JP7242491B2
JP7242491B2 JP2019171100A JP2019171100A JP7242491B2 JP 7242491 B2 JP7242491 B2 JP 7242491B2 JP 2019171100 A JP2019171100 A JP 2019171100A JP 2019171100 A JP2019171100 A JP 2019171100A JP 7242491 B2 JP7242491 B2 JP 7242491B2
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JP
Japan
Prior art keywords
gate electrode
semiconductor region
semiconductor
region
trench
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JP2019171100A
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English (en)
Japanese (ja)
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JP2021048337A (ja
JP2021048337A5 (enExample
Inventor
陽子 岩鍜治
知子 末代
圭子 河村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Toshiba Corp
Toshiba Electronic Devices and Storage Corp
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Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Priority to JP2019171100A priority Critical patent/JP7242491B2/ja
Priority to CN202010020268.7A priority patent/CN112542512B/zh
Priority to US16/791,679 priority patent/US11063130B2/en
Publication of JP2021048337A publication Critical patent/JP2021048337A/ja
Priority to US17/339,204 priority patent/US11715776B2/en
Publication of JP2021048337A5 publication Critical patent/JP2021048337A5/ja
Application granted granted Critical
Publication of JP7242491B2 publication Critical patent/JP7242491B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2019171100A 2019-09-20 2019-09-20 半導体装置及び半導体回路 Active JP7242491B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2019171100A JP7242491B2 (ja) 2019-09-20 2019-09-20 半導体装置及び半導体回路
CN202010020268.7A CN112542512B (zh) 2019-09-20 2020-01-09 半导体装置及半导体电路
US16/791,679 US11063130B2 (en) 2019-09-20 2020-02-14 Semiconductor device and semiconductor circuit
US17/339,204 US11715776B2 (en) 2019-09-20 2021-06-04 Semiconductor device and semiconductor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2019171100A JP7242491B2 (ja) 2019-09-20 2019-09-20 半導体装置及び半導体回路

Publications (3)

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JP2021048337A JP2021048337A (ja) 2021-03-25
JP2021048337A5 JP2021048337A5 (enExample) 2021-10-21
JP7242491B2 true JP7242491B2 (ja) 2023-03-20

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JP2019171100A Active JP7242491B2 (ja) 2019-09-20 2019-09-20 半導体装置及び半導体回路

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US (2) US11063130B2 (enExample)
JP (1) JP7242491B2 (enExample)
CN (1) CN112542512B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7242491B2 (ja) * 2019-09-20 2023-03-20 株式会社東芝 半導体装置及び半導体回路
JP7396513B2 (ja) * 2020-10-16 2023-12-12 富士電機株式会社 半導体装置
JP7407757B2 (ja) 2021-03-17 2024-01-04 株式会社東芝 半導体装置
JP7472068B2 (ja) 2021-03-19 2024-04-22 株式会社東芝 半導体装置及び半導体回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109545A (ja) 2008-10-29 2010-05-13 Denso Corp 絶縁ゲート型半導体装置の駆動回路
JP2014093486A (ja) 2012-11-06 2014-05-19 Denso Corp 半導体装置
JP2016219772A (ja) 2015-05-15 2016-12-22 富士電機株式会社 半導体装置
JP2017135245A (ja) 2016-01-27 2017-08-03 株式会社東芝 半導体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751024A (en) 1995-03-14 1998-05-12 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
JP3288218B2 (ja) 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US6040599A (en) 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
JP2000101076A (ja) 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
JP4398719B2 (ja) 2003-12-25 2010-01-13 株式会社東芝 半導体装置
JP5014646B2 (ja) 2006-03-01 2012-08-29 三菱電機株式会社 半導体装置
CN101946324B (zh) * 2008-02-14 2013-02-27 丰田自动车株式会社 反向导通半导体元件的驱动方法和半导体装置以及供电装置
JP5446233B2 (ja) 2008-12-08 2014-03-19 株式会社デンソー 絶縁ゲート型半導体装置の駆動回路およびそれに適した半導体装置
JP5781877B2 (ja) 2011-09-22 2015-09-24 日本特殊陶業株式会社 配線基板の製造方法
US8916951B2 (en) * 2011-09-23 2014-12-23 Alpha And Omega Semiconductor Incorporated Lateral PNP bipolar transistor formed with multiple epitaxial layers
JP5742672B2 (ja) 2011-11-02 2015-07-01 株式会社デンソー 半導体装置
JP5867617B2 (ja) * 2012-10-17 2016-02-24 富士電機株式会社 半導体装置
JP6566512B2 (ja) * 2014-04-15 2019-08-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP2016162855A (ja) 2015-02-27 2016-09-05 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
US10529839B2 (en) 2015-05-15 2020-01-07 Fuji Electric Co., Ltd. Semiconductor device
JP7056031B2 (ja) 2017-04-03 2022-04-19 富士電機株式会社 半導体装置
US10319808B2 (en) 2017-04-03 2019-06-11 Fuji Electric Co., Ltd. Semiconductor device
CN109524396B (zh) 2017-09-20 2023-05-12 株式会社东芝 半导体装置
JP6896673B2 (ja) * 2018-03-23 2021-06-30 株式会社東芝 半導体装置
JP6946219B2 (ja) 2018-03-23 2021-10-06 株式会社東芝 半導体装置
JP7091204B2 (ja) 2018-09-19 2022-06-27 株式会社東芝 半導体装置
JP7199270B2 (ja) * 2019-03-20 2023-01-05 株式会社東芝 半導体装置及び半導体回路
JP7242491B2 (ja) * 2019-09-20 2023-03-20 株式会社東芝 半導体装置及び半導体回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109545A (ja) 2008-10-29 2010-05-13 Denso Corp 絶縁ゲート型半導体装置の駆動回路
JP2014093486A (ja) 2012-11-06 2014-05-19 Denso Corp 半導体装置
JP2016219772A (ja) 2015-05-15 2016-12-22 富士電機株式会社 半導体装置
JP2017135245A (ja) 2016-01-27 2017-08-03 株式会社東芝 半導体装置

Also Published As

Publication number Publication date
US11715776B2 (en) 2023-08-01
CN112542512B (zh) 2023-08-18
US11063130B2 (en) 2021-07-13
US20210091193A1 (en) 2021-03-25
CN112542512A (zh) 2021-03-23
JP2021048337A (ja) 2021-03-25
US20210296459A1 (en) 2021-09-23

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