CN112542512B - 半导体装置及半导体电路 - Google Patents

半导体装置及半导体电路 Download PDF

Info

Publication number
CN112542512B
CN112542512B CN202010020268.7A CN202010020268A CN112542512B CN 112542512 B CN112542512 B CN 112542512B CN 202010020268 A CN202010020268 A CN 202010020268A CN 112542512 B CN112542512 B CN 112542512B
Authority
CN
China
Prior art keywords
gate electrode
region
trench
semiconductor
control gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202010020268.7A
Other languages
English (en)
Chinese (zh)
Other versions
CN112542512A (zh
Inventor
岩鍜治阳子
末代知子
河村圭子
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Original Assignee
Toshiba Corp
Toshiba Electronic Devices and Storage Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Toshiba Electronic Devices and Storage Corp filed Critical Toshiba Corp
Publication of CN112542512A publication Critical patent/CN112542512A/zh
Application granted granted Critical
Publication of CN112542512B publication Critical patent/CN112542512B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/281—Base electrodes for bipolar transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/518—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their lengths or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts

Landscapes

  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
CN202010020268.7A 2019-09-20 2020-01-09 半导体装置及半导体电路 Active CN112542512B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019171100A JP7242491B2 (ja) 2019-09-20 2019-09-20 半導体装置及び半導体回路
JP2019-171100 2019-09-20

Publications (2)

Publication Number Publication Date
CN112542512A CN112542512A (zh) 2021-03-23
CN112542512B true CN112542512B (zh) 2023-08-18

Family

ID=74876595

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202010020268.7A Active CN112542512B (zh) 2019-09-20 2020-01-09 半导体装置及半导体电路

Country Status (3)

Country Link
US (2) US11063130B2 (enExample)
JP (1) JP7242491B2 (enExample)
CN (1) CN112542512B (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7242491B2 (ja) * 2019-09-20 2023-03-20 株式会社東芝 半導体装置及び半導体回路
JP7396513B2 (ja) * 2020-10-16 2023-12-12 富士電機株式会社 半導体装置
JP7407757B2 (ja) 2021-03-17 2024-01-04 株式会社東芝 半導体装置
JP7472068B2 (ja) 2021-03-19 2024-04-22 株式会社東芝 半導体装置及び半導体回路

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109545A (ja) * 2008-10-29 2010-05-13 Denso Corp 絶縁ゲート型半導体装置の駆動回路
CN103022112A (zh) * 2011-09-23 2013-04-03 万国半导体股份有限公司 带有多个外延层的横向pnp双极晶体管
JP2016219772A (ja) * 2015-05-15 2016-12-22 富士電機株式会社 半導体装置
CN109524396A (zh) * 2017-09-20 2019-03-26 株式会社东芝 半导体装置

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5751024A (en) 1995-03-14 1998-05-12 Mitsubishi Denki Kabushiki Kaisha Insulated gate semiconductor device
JP3288218B2 (ja) 1995-03-14 2002-06-04 三菱電機株式会社 絶縁ゲート型半導体装置およびその製造方法
US6040599A (en) 1996-03-12 2000-03-21 Mitsubishi Denki Kabushiki Kaisha Insulated trench semiconductor device with particular layer structure
JP2000101076A (ja) 1998-09-25 2000-04-07 Toshiba Corp 絶縁ゲート型半導体素子とその駆動方法
JP4398719B2 (ja) 2003-12-25 2010-01-13 株式会社東芝 半導体装置
JP5014646B2 (ja) 2006-03-01 2012-08-29 三菱電機株式会社 半導体装置
CN101946324B (zh) * 2008-02-14 2013-02-27 丰田自动车株式会社 反向导通半导体元件的驱动方法和半导体装置以及供电装置
JP5446233B2 (ja) 2008-12-08 2014-03-19 株式会社デンソー 絶縁ゲート型半導体装置の駆動回路およびそれに適した半導体装置
JP5781877B2 (ja) 2011-09-22 2015-09-24 日本特殊陶業株式会社 配線基板の製造方法
JP5742672B2 (ja) 2011-11-02 2015-07-01 株式会社デンソー 半導体装置
JP5867617B2 (ja) * 2012-10-17 2016-02-24 富士電機株式会社 半導体装置
JP5696713B2 (ja) 2012-11-06 2015-04-08 株式会社デンソー 半導体装置及びその検査方法
JP6566512B2 (ja) * 2014-04-15 2019-08-28 ローム株式会社 半導体装置および半導体装置の製造方法
JP2016162855A (ja) 2015-02-27 2016-09-05 株式会社日立製作所 半導体装置およびそれを用いた電力変換装置
US10529839B2 (en) 2015-05-15 2020-01-07 Fuji Electric Co., Ltd. Semiconductor device
JP2017135245A (ja) * 2016-01-27 2017-08-03 株式会社東芝 半導体装置
JP7056031B2 (ja) 2017-04-03 2022-04-19 富士電機株式会社 半導体装置
US10319808B2 (en) 2017-04-03 2019-06-11 Fuji Electric Co., Ltd. Semiconductor device
JP6896673B2 (ja) * 2018-03-23 2021-06-30 株式会社東芝 半導体装置
JP6946219B2 (ja) 2018-03-23 2021-10-06 株式会社東芝 半導体装置
JP7091204B2 (ja) 2018-09-19 2022-06-27 株式会社東芝 半導体装置
JP7199270B2 (ja) * 2019-03-20 2023-01-05 株式会社東芝 半導体装置及び半導体回路
JP7242491B2 (ja) * 2019-09-20 2023-03-20 株式会社東芝 半導体装置及び半導体回路

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010109545A (ja) * 2008-10-29 2010-05-13 Denso Corp 絶縁ゲート型半導体装置の駆動回路
CN103022112A (zh) * 2011-09-23 2013-04-03 万国半导体股份有限公司 带有多个外延层的横向pnp双极晶体管
JP2016219772A (ja) * 2015-05-15 2016-12-22 富士電機株式会社 半導体装置
CN109524396A (zh) * 2017-09-20 2019-03-26 株式会社东芝 半导体装置

Also Published As

Publication number Publication date
US11715776B2 (en) 2023-08-01
US11063130B2 (en) 2021-07-13
JP7242491B2 (ja) 2023-03-20
US20210091193A1 (en) 2021-03-25
CN112542512A (zh) 2021-03-23
JP2021048337A (ja) 2021-03-25
US20210296459A1 (en) 2021-09-23

Similar Documents

Publication Publication Date Title
CN111725310B (zh) 半导体装置及半导体电路
CN106688083B (zh) 半导体装置
US8604544B2 (en) Semiconductor device
CN112542512B (zh) 半导体装置及半导体电路
US8890252B2 (en) Semiconductor device having switching element and free wheel diode and method for controlling the same
CN107039438B (zh) 半导体装置
US11222891B2 (en) Semiconductor device and semiconductor circuit
US10916628B2 (en) Semiconductor device
US9437727B2 (en) Semiconductor element including active region, low resistance layer and vertical drift portion
CN1328345A (zh) 半导体器件
JP2021150544A (ja) 半導体装置及び半導体回路
JP7472068B2 (ja) 半導体装置及び半導体回路
JP2024015431A (ja) 半導体装置
US20150108540A1 (en) Semiconductor Device
KR101209564B1 (ko) 반도체장치
EP4064365A2 (en) Semiconductor device
US20240047541A1 (en) Semiconductor device
US11955477B2 (en) Semiconductor device and semiconductor circuit
JP7387562B2 (ja) 半導体素子および半導体装置
JP2025175145A (ja) 半導体装置の駆動方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant