JP7227230B2 - 熱アシスト負電子親和性フォトカソード - Google Patents

熱アシスト負電子親和性フォトカソード Download PDF

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Publication number
JP7227230B2
JP7227230B2 JP2020514947A JP2020514947A JP7227230B2 JP 7227230 B2 JP7227230 B2 JP 7227230B2 JP 2020514947 A JP2020514947 A JP 2020514947A JP 2020514947 A JP2020514947 A JP 2020514947A JP 7227230 B2 JP7227230 B2 JP 7227230B2
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Prior art keywords
photocathode
layer
barrier
thermionic
conduction band
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Japanese (ja)
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JP2020533760A5 (enExample
JP2020533760A (ja
Inventor
ケネス エー． コステロ，
ヴァール アービィ，
マイケル ユルコビッチ，
シー ツォン，
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インテヴァック インコーポレイテッド
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/26—Image pick-up tubes having an input of visible light and electric output
    • H01J31/48—Tubes with amplification of output effected by electron multiplier arrangements within the vacuum space
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2231/00—Cathode ray tubes or electron beam tubes
    • H01J2231/50—Imaging and conversion tubes
    • H01J2231/501—Imaging and conversion tubes including multiplication stage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/04—Cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J31/00—Cathode ray tubes; Electron beam tubes
    • H01J31/08—Cathode ray tubes; Electron beam tubes having a screen on or from which an image or pattern is formed, picked up, converted, or stored
    • H01J31/49—Pick-up adapted for an input of electromagnetic radiation other than visible light and having an electric output, e.g. for an input of X-rays, for an input of infrared radiation

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
  • Image-Pickup Tubes, Image-Amplification Tubes, And Storage Tubes (AREA)
JP2020514947A 2017-09-12 2018-09-12 熱アシスト負電子親和性フォトカソード Active JP7227230B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/702,647 2017-09-12
US15/702,647 US10692683B2 (en) 2017-09-12 2017-09-12 Thermally assisted negative electron affinity photocathode
PCT/US2018/050735 WO2019055554A1 (en) 2017-09-12 2018-09-12 PHOTOCATHODE WITH THERMALLY ASSISTED NEGATIVE ELECTRONIC AFFINITY

Publications (3)

Publication Number Publication Date
JP2020533760A JP2020533760A (ja) 2020-11-19
JP2020533760A5 JP2020533760A5 (enExample) 2021-10-21
JP7227230B2 true JP7227230B2 (ja) 2023-02-21

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JP2020514947A Active JP7227230B2 (ja) 2017-09-12 2018-09-12 熱アシスト負電子親和性フォトカソード

Country Status (7)

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US (1) US10692683B2 (enExample)
EP (1) EP3682461B1 (enExample)
JP (1) JP7227230B2 (enExample)
AU (1) AU2018332878B2 (enExample)
CA (1) CA3075509C (enExample)
IL (1) IL273140B2 (enExample)
WO (1) WO2019055554A1 (enExample)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11621289B2 (en) 2020-05-22 2023-04-04 Eotech, Llc Compact proximity focused image sensor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000090817A (ja) 1998-09-11 2000-03-31 Daido Steel Co Ltd 偏極電子線発生素子
US20020180343A1 (en) 2001-05-31 2002-12-05 Smith Arlynn Walter Short wavelength infrared cathode
US20040232403A1 (en) 2003-05-22 2004-11-25 Sillmon Roger S. Tuned bandwidth photocathode for transmission negative electron affinity devices
JP2015536012A (ja) 2012-08-03 2015-12-17 ケーエルエー−テンカー コーポレイション ホウ素層を有するシリコン基板を含むフォトカソード

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2507386A1 (fr) * 1981-06-03 1982-12-10 Labo Electronique Physique Dispositif semi-conducteur, emetteur d'electrons, dont la couche active possede un gradient de dopage
FR2592217B1 (fr) * 1985-12-20 1988-02-05 Thomson Csf Photocathode a amplification interne
JPH0512989A (ja) * 1991-07-01 1993-01-22 Nec Corp 半導体光電面およびその製造方法
US5268612A (en) * 1991-07-01 1993-12-07 Intevac, Inc. Feedback limited microchannel plate
US5268570A (en) 1991-12-20 1993-12-07 Litton Systems, Inc. Transmission mode InGaAs photocathode for night vision system
US5349177A (en) * 1993-02-22 1994-09-20 Itt Corporation Image intensifier tube having a solid state electron amplifier
US5597112A (en) 1994-10-13 1997-01-28 Knapp; Frederick W. Collapsible octahedral container
US6005257A (en) * 1995-09-13 1999-12-21 Litton Systems, Inc. Transmission mode photocathode with multilayer active layer for night vision and method
US5712490A (en) * 1996-11-21 1998-01-27 Itt Industries, Inc. Ramp cathode structures for vacuum emission
US6350999B1 (en) * 1999-02-05 2002-02-26 Matsushita Electric Industrial Co., Ltd. Electron-emitting device
US6957992B2 (en) * 1999-03-18 2005-10-25 Litton Systems, Inc. Image intensification tube
US6483231B1 (en) * 1999-05-07 2002-11-19 Litton Systems, Inc. Night vision device and method
JPWO2002078144A1 (ja) * 2001-03-27 2004-07-15 シャープ株式会社 半導体装置及び結晶成長方法
JP2004179318A (ja) * 2002-11-26 2004-06-24 Nec Compound Semiconductor Devices Ltd 接合型電界効果トランジスタ及びその製造方法
US7838869B2 (en) * 2005-10-21 2010-11-23 Georgia State University Research Foundation, Inc. Dual band photodetector
JP5267931B2 (ja) 2008-10-29 2013-08-21 独立行政法人理化学研究所 光陰極半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000090817A (ja) 1998-09-11 2000-03-31 Daido Steel Co Ltd 偏極電子線発生素子
US20020180343A1 (en) 2001-05-31 2002-12-05 Smith Arlynn Walter Short wavelength infrared cathode
US20040232403A1 (en) 2003-05-22 2004-11-25 Sillmon Roger S. Tuned bandwidth photocathode for transmission negative electron affinity devices
JP2015536012A (ja) 2012-08-03 2015-12-17 ケーエルエー−テンカー コーポレイション ホウ素層を有するシリコン基板を含むフォトカソード

Also Published As

Publication number Publication date
WO2019055554A1 (en) 2019-03-21
CA3075509C (en) 2024-05-14
EP3682461B1 (en) 2024-11-06
JP2020533760A (ja) 2020-11-19
US10692683B2 (en) 2020-06-23
IL273140A (en) 2020-04-30
IL273140B2 (en) 2024-10-01
EP3682461A1 (en) 2020-07-22
IL273140B1 (en) 2024-06-01
AU2018332878A1 (en) 2020-04-09
US20190080875A1 (en) 2019-03-14
EP3682461A4 (en) 2021-11-10
AU2018332878B2 (en) 2023-03-30
CA3075509A1 (en) 2019-03-21

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